公开(公告)号：US06551946B1

公开(公告)日：2003-04-22

申请号：US09597076

申请日：2000-06-20

申请人： Yuanning Chen ,  Sundar Srinivasan Chetlur ,  Pradip Kumar Roy

发明人： Yuanning Chen ,  Sundar Srinivasan Chetlur ,  Pradip Kumar Roy

IPC分类号： H01L2131

CPC分类号： H01L21/28185 ,  C30B29/06 ,  C30B33/005 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28273 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3185 ,  H01L29/513

摘要： A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrate is illustratively oxidizable silicon and the threshold temperature is the viscoelastic temperature of silicon dioxide.

摘要翻译： 形成氧化物层的方法包括在低于阈值温度的温度下在衬底上形成第一氧化物部分。 在高于阈值温度的温度下，在第一氧化物部分的下面形成第二氧化物部分。 衬底是可氧化的硅，阈值温度是二氧化硅的粘弹性温度。

公开(公告)号：US06461225B1

公开(公告)日：2002-10-08

申请号：US09547132

申请日：2000-04-11

申请人： Sudhanshu Misra ,  Pradip Kumar Roy

发明人： Sudhanshu Misra ,  Pradip Kumar Roy

IPC分类号： B24B722

CPC分类号： H01L21/7684 ,  H01L21/76877

摘要： According to the present invention, the dishing of copper during chemical mechanical polishing (CMP) process can be significantly reduced, and in most instances eliminated, by the use of electroplated alloys of copper whereas the alloying metal forms a continuous solid solution with the copper. By forming electroplated alloys of copper with metals that form continuous solid solutions therewith, a deposition layer of such an alloy on the surface of a barrier metal layer allows for lowering the selectivity of the slurry polish used during the CMP process towards the alloy. The alloys of copper with metals that form a continuous solid solution in an electroplating process changes the oxidation characteristics, mechanical properties, electrical properties, stiffness parameters and hardness parameters of the copper. The change in these properties allows the alloy layer and barrier layer to be polished at an equivalent rate until the entire barrier layer has been polished. In this manner, dishing of the copper in the trenches of a wafer from the CMP process can be avoided.

摘要翻译： 根据本发明，在化学机械抛光（CMP）工艺期间铜的凹陷可以显着减少，并且在大多数情况下通过使用铜的电镀合金消除，而合金金属与铜形成连续的固溶体。 通过形成铜的电镀合金与形成连续固溶体的金属，这种合金在阻挡金属层的表面上的沉积层允许降低在CMP工艺期间对合金使用的浆料抛光剂的选择性。 在电镀工艺中形成连续固溶体的铜与金属的合金改变了铜的氧化特性，机械性能，电性能，刚度参数和硬度参数。 这些性质的变化使合金层和阻挡层以等效的速度被抛光，直到整个阻挡层被抛光。 以这种方式，可以避免晶片的沟槽中的铜从CMP工艺中的凹陷。

公开(公告)号：US06258231B1

公开(公告)日：2001-07-10

申请号：US09432721

申请日：1999-11-01

申请人： William Graham Easter ,  Sudhanshu Misra ,  Pradip Kumar Roy ,  Susan Clay Vitkavage

发明人： William Graham Easter ,  Sudhanshu Misra ,  Pradip Kumar Roy ,  Susan Clay Vitkavage

IPC分类号： G01N27406

CPC分类号： G01N27/406

摘要： An apparatus for determining the endpoint in a chemical mechanical polishing operation used for polishing a metal-containing material includes an electrochemical cell and an electronic circuit. An acidic polishing slurry is used to oxidize the metal and the oxidized metal is included in an effluent slurry stream, a sample of which is provided to the apparatus. The apparatus includes a liquid-phase working electrode, a reference electrode and a solid electrolyte which allows for the interchange of ions between the electrodes. An electronic circuit is coupled to the electrode for monitoring the component activity of the effluent slurry stream by measuring the electric potential across the electrodes. When the measured electric potential changes, indicating a change in the composition of the effluent slurry, endpoint is indicated.

摘要翻译： 用于确定用于抛光含金属材料的化学机械抛光操作中的终点的装置包括电化学电池和电子电路。 使用酸性抛光浆料来氧化金属，并且将氧化的金属包括在流出物浆料流中，其中样品被提供给设备。 该装置包括液相工作电极，参比电极和固体电解质，其允许电极之间的离子交换。 电子电路耦合到电极，用于通过测量电极两端的电位来监测流出物浆料流的组分活性。 当测量的电位改变时，表明流出物浆料的组成发生变化，表明终点。

公开(公告)号：US06204186B1

公开(公告)日：2001-03-20

申请号：US09364366

申请日：1999-07-30

申请人： Samir Chaudhry ,  Sundar Srinivasan Chetlur ,  Nace Layadi ,  Pradip Kumar Roy ,  Hem M. Vaidya

发明人： Samir Chaudhry ,  Sundar Srinivasan Chetlur ,  Nace Layadi ,  Pradip Kumar Roy ,  Hem M. Vaidya

IPC分类号： H01L21311

CPC分类号： H01L28/60 ,  H01L21/76804 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/40

摘要： A method of making a capacitor includes the steps of forming an interconnection line above a substrate, depositing a first dielectric layer on the interconnection line, and etching a via in the first dielectric layer. The via has a tapered width which increases in a direction toward the substrate. Further, the method includes filling the via with a conductive metal to form a metal plug, and etching a trench in the first dielectric layer around an upper portion of the metal plug. The metal plug has a tapered width which secures it into the dielectric layer. A second dielectric layer is deposited adjacent the metal plug and an upper electrode is deposited on the second dielectric layer. Preferably, a lower electrode is deposited to line the trench and contact the metal plug.

摘要翻译： 一种制造电容器的方法包括以下步骤：在衬底上形成互连线，在互连线上沉积第一介电层，以及蚀刻第一介电层中的通孔。 通孔具有朝向基板的方向增加的锥形宽度。 此外，该方法包括用导电金属填充通孔以形成金属插塞，并且在金属插塞的上部周围蚀刻第一电介质层中的沟槽。 金属插头具有将其固定到电介质层中的锥形宽度。 第二电介质层沉积在金属插塞附近，并且上电极沉积在第二电介质层上。 优选地，沉积下电极以对准沟槽并接触金属插塞。

公开(公告)号：US5908312A

公开(公告)日：1999-06-01

申请号：US864220

申请日：1997-05-28

申请人： Kin Ping Cheung ,  Steven James Hillenius ,  Chun-Ting Liu ,  Yi Ma ,  Pradip Kumar Roy

发明人： Kin Ping Cheung ,  Steven James Hillenius ,  Chun-Ting Liu ,  Yi Ma ,  Pradip Kumar Roy

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L21/336

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L21/2822 ,  H01L29/518 ,  H01L21/26506

摘要： A method of preventing diffusion penetration of the dopant used to dope polysilicon gate material in a MOSFET is disclosed. Atomic nitrogen is introduced into the substrate prior to gate oxide growth. The nitrogen later diffuses upward into the gate oxide and blocks subsequent ion implanted gate dopants from penetrating to the substrate. Low dosages of atomic nitrogen implantation, while not significantly affecting gate oxide growth rate, produce significant improvements in the damage immunity of thin gate oxides.

摘要翻译： 公开了一种防止用于掺杂MOSFET中的多晶硅栅极材料的掺杂剂的扩散渗透的方法。 在栅极氧化物生长之前将原子氮引入衬底中。 然后氮气向上扩散到栅极氧化物中，并阻止随后的离子注入的栅极掺杂剂渗透到衬底。 低剂量的原子氮注入虽然没有显着影响栅极氧化物的生长速率，但对薄栅氧化物的损伤免疫力产生了显着的改善。