摘要:
An oligomer probe array having improved reaction yield is provided. The oligomer probe array includes a substrate, an immobilization layer on the substrate, a plurality of nano particles coupled with a surface of the immobilization layer, and a plurality of oligomer probes coupled with surfaces of the nano particles.
摘要:
The photosensitive polymer includes a first monomer which is norbornene ester having C1 to C12 aliphatic alcohol as a substituent, and a second monomer which is maleic anhydride. A chemically amplified photoresist composition, containing the photosensitive polymer, has an improved etching resistance and adhesion to underlying layer materials, and exhibits wettability to developing solutions.
摘要:
Provided are a fluorine-containing photosensitive polymer having a hydrate structure and a resist composition including the photosensitive polymer. The photosensitive polymer has an average molecular weight of about 3,000-100,000 with a repeating unit including a group having one of structural formulae below:
摘要:
A photosensitive polymer having a protecting group including a fused aromatic ring, and a photoresist composition including the photosensitive polymer are provided. The photosensitive polymer has an acid-labile protecting group at its polymer backbone, the acid-labile protecting group including a fused aromatic ring having formula: where R1 is hydrogen atom or alkyl group having from 1 to 4 carbon atoms; X is hydrogen atom, halogen, alkyl, or alkoxy; and y is an integer from 1 to 3, wherein the fused aromatic ring is a liner ring or branched ring with y greater than or equal to 2. A photoresist composition is also provided which includes the photosensitive polymer and a photoacid generator (PAG).
摘要:
Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; m and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要:
There are provided a photosensitive polymer having a copolymer of alkyl vinyl ether and a resist composition containing the same. The photosensitive polymer includes a copolymer of alkyl vinyl ether and maleic anhydride, represented by the following structure: wherein X is one of a linear alkyl vinyl ether and a cyclic alkyl vinyl ether, which are respectively represented by the structures wherein y is one of the integer values 1 through 4, R1 is one of a hydrogen atom and a methyl group, R2 is a C1 to C20 hydrocarbon, and R3 is one of a hydrogen atom, a C1 to C3 alkyl group and an alkoxy group.
摘要:
A photosensitive polymer which maintains transparency even when exposed to a short-wavelength light source of 193 nm or below, exhibits improved adhesiveness to a substrate, improved contrast and improved resistance to dry etching. The photosensitive polymer includes a first monomer which is alicyclic hydrocarbon carboxylate having an acid-labile C6 to C20 tertiary alicyclic hydrocarbon group as a substituent, and a second monomer which is capable of free radical polymerization.
摘要:
A resist composition includes a photosensitive polymer having a lactone in its backbone. The photosensitive polymer of the resist composition includes at least one of the monomers having the formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x, y, v and w are independently integers from 1 to 6.
摘要:
There are provided a photosensitive polymer having a copolymer of alkyl vinyl ether and a resist composition containing the same. The photosensitive polymer includes a copolymer of alkyl vinyl ether and maleic anhydride, represented by the following structure: wherein X is one of a linear alkyl vinyl ether and a cyclic alkyl vinyl ether, which are respectively represented by the structures wherein y is one of the integer values 1 through 4, R1 is one of a hydrogen atom and a methyl group, R2 is a C1 to C20 hydrocarbon, and R3 is one of a hydrogen atom, a C1 to C3 alkyl group and an alkoxy group.
摘要:
A polymer used in a chemically amplified resist is represented by the following formula: wherein R1, R3 and R5 are each independently selected from the group consisting of —H, and —CH3; R2 is selected from the group consisting of t-butyl, tetrahydropyranyl, and 1-alkoxyethyl; R4 is selected from the group consisting of —H, —CH3, t-butyl, tetrahydropyranyl, and 1-alkoxyethyl; x is an integer ranging from 1 to 4; and wherein l, m, and n are selected such that l/(l+m+n) ranges from 0.1 to 0.5, m/(l+m+n) ranges from 0.01 to 0.5, and (l+m)/(l+m+n) ranges from 0.1 to 0.7.
摘要翻译:用于化学放大抗蚀剂的聚合物由下式表示:其中R1,R3和R5各自独立地选自-H和-CH3; R2选自叔丁基,四氢吡喃基和1-烷氧基乙基; R 4选自-H,-CH 3,叔丁基,四氢吡喃基和1-烷氧基乙基; x是1〜4的整数; 并且其中l,m和n被选择为使得l /(1 + m + n)为0.1至0.5,m /(1 + m + n)为0.01至0.5,和(1 + m)/( 1 + m + n)为0.1〜0.7。