摘要:
Provided are a fluorine-containing photosensitive polymer having a hydrate structure and a resist composition including the photosensitive polymer. The photosensitive polymer has an average molecular weight of about 3,000-100,000 with a repeating unit including a group having one of structural formulae below:
摘要:
There are provided a photosensitive polymer and a photoresist compositing containing the same. The photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl ester group, R2 is hydrogen atom, methyl, ethyl, carboxyl, &ggr;-butyrolactone-2-yl ester, &ggr;-butyrolactone-3-yl ester, pantolactone-2-yl ester, mevalonic lactone ester, 3-tetrahydrofuranyl ester, 2,3-propylenecarbonate-1-yl ester, 3-methyl-&ggr;-butyrolactone-3-yl ester or C3 to C20 alicyclic hydrocarbon, a/(a+b+c) is 0.1˜0.7, b/(a+b+c) is 0.1˜0.8, c/(a+b+c) is 0.0˜0.8, and n is an integer in the range of 0 to 2.
摘要翻译:提供光敏聚合物和含有它的光致抗蚀剂复合物。 光敏聚合物由下式表示:其中R1是酸不稳定的叔烷基酯基,R2是氢原子,甲基,乙基,羧基,γ-丁内酯-2-基酯,γ-丁内酯-3-基酯 ,泛酸内酯-2-基酯,甲羟戊酸内酯,3-四氢呋喃基酯,2,3-亚丙基碳酸酯-1-基酯,3-甲基-γ-丁内酯-3-基酯或C 3至C 20脂环族烃,a /( a + b + c)为0.1〜0.7,b /(a + b + c)为0.1〜0.8,c /(a + b + c)为0.0〜0.8,n为0〜 2。
摘要:
A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.
摘要:
A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.
摘要:
A photosensitive polymer which maintains transparency even when exposed to a short-wavelength light source of 193 nm or below, exhibits improved adhesiveness to a substrate, improved contrast and improved resistance to dry etching. The photosensitive polymer includes a first monomer which is alicyclic hydrocarbon carboxylate having an acid-labile C6 to C20 tertiary alicyclic hydrocarbon group as a substituent, and a second monomer which is capable of free radical polymerization.
摘要:
A resist composition includes a photosensitive polymer having a lactone in its backbone. The photosensitive polymer of the resist composition includes at least one of the monomers having the formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x, y, v and w are independently integers from 1 to 6.
摘要:
This invention is directed to a coating composition used for original equipment manufacturing or refinishing uses in the automotive industry, which coating composition utilizes an acrylic polymer which contains substituted or unsubstituted exomethylene lactones or lactams as a comonomer.
摘要:
A photosensitive monomer including a methylene butyrolactone derivative represented by the following formula: wherein R1 is a hydrogen atom or alkyl group, R2 is an acid-labile group, X is a hydrogen atom, or substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and Y is a substituted or unsubstitued alkyl group or alicyclic hydrocarbon group having 1 to 20 carbon atoms.
摘要:
A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.
摘要:
A photosensitive polymer having a main chain consisting of only norbornene-type alicyclic units, a resist composition containing the photosensitive polymer and a preparation method thereof, wherein the photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl group, R2 is &ggr;-butyrolactone-2-yl, &ggr;-butyrolactone-3-yl, pantolactone-2-yl, mevalonic lactone, 3-tetrahydrofuranyl, 2,3-propylenecarbonate-1-yl or 3-methyl-&ggr;-butyrolactone-3-yl, R3 is a hydrogen atom, methyl, ethyl or C3 to C20 alicyclic hydrocarbon, and p/(p+q+r) is 0.1˜0.8, q/(p+q+r) is 0.2˜0.8, and r/(p+q+r) is 0.0˜0.4. To prepare the photosensitive polymer, at least two different norbornene-type compounds having an ester group as a substituent are reacted in the presence of an initiator at a temperature of about 120 to about 150 ° C. without a reaction catalyst.