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86 条记录 (耗时 0.033 秒)

    Semiconductor device having trench isolation structure and method of fabricating the same
    64.
    发明授权
    Semiconductor device having trench isolation structure and method of fabricating the same 有权

    公开(公告)号：US06797579B2

    公开(公告)日：2004-09-28

    申请号：US10755596

    申请日：2004-01-12

    申请人： Seung-Han Yoo ,  Jae-Min Yu ,  Sang-Wook Park ,  Tae-Jung Lee

    发明人： Seung-Han Yoo ,  Jae-Min Yu ,  Sang-Wook Park ,  Tae-Jung Lee

    IPC分类号： H01L21331

    CPC分类号： H01L21/76264 ,  H01L21/76283

    摘要： A semiconductor device having a trench isolation structure and a method of fabricating the same are provided. The device has a trench region and an isolation structure. The trench region is disposed to define an active region at a predetermined region of an SOI substrate formed by sequentially stacking a buried insulating layer and an upper silicon layer on a base substrate. The isolation structure fills an inside of the trench region. The trench region has a deep trench region where the upper silicon layer penetrates to the buried insulating layer and a shallow trench region existing at an outside of the deep trench region. The method of forming a trench region with deep and shallow trench regions includes patterning an upper silicon layer of an SOI substrate. A trench oxide layer and a trench liner are conformally formed on a sidewall and a bottom of the trench region. The trench liner on the bottom of the trench region, the trench oxide layer, and the upper silicon layer are successively patterned to form the deep trench region where the buried insulating layer is exposed. The trench region existing at an outside of the deep trench region corresponds to the shallow trench region.

    Semiconductor device having trench isolation structure and method of fabricating the same
    65.
    发明授权
    Semiconductor device having trench isolation structure and method of fabricating the same 有权
    具有沟槽隔离结构的半导体器件及其制造方法

    公开(公告)号：US06740933B2

    公开(公告)日：2004-05-25

    申请号：US10243019

    申请日：2002-09-13

    申请人： Seung-Han Yoo ,  Jae-Min Yu ,  Sang-Wook Park ,  Tae-Jung Lee

    发明人： Seung-Han Yoo ,  Jae-Min Yu ,  Sang-Wook Park ,  Tae-Jung Lee

    IPC分类号： H01L2701

    CPC分类号： H01L21/76264 ,  H01L21/76283

    摘要： A semiconductor device having a trench isolation structure and a method of fabricating the same are provided. The device has a trench region and an isolation structure. The trench region is disposed to define an active region at a predetermined region of an SOI substrate formed by sequentially stacking a buried insulating layer and an upper silicon layer on a base substrate. The isolation structure fills an inside of the trench region. The trench region has a deep trench region where the upper silicon layer penetrates to the buried insulating layer and a shallow trench region existing at an outside of the deep trench region. The method of forming a trench region with deep and shallow trench regions includes patterning an upper silicon layer of an SOI substrate. A trench oxide layer and a trench liner are conformally formed on a sidewall and a bottom of the trench region. The trench liner on the bottom of the trench region, the trench oxide layer, and the upper silicon layer are successively patterned to form the deep trench region where the buried insulating layer is exposed. The trench region existing at an outside of the deep trench region corresponds to the shallow trench region.

    摘要翻译： 提供了具有沟槽隔离结构的半导体器件及其制造方法。 该器件具有沟槽区域和隔离结构。 沟槽区域被设置为在通过在基底衬底上依次层叠掩埋绝缘层和上硅层而形成的SOI衬底的预定区域处限定有源区。 隔离结构填充沟槽区域的内部。 沟槽区域具有深沟槽区域，其中上硅层穿透到掩埋绝缘层和存在于深沟槽区域外部的浅沟槽区域。 形成具有深和浅沟槽区域的沟槽区域的方法包括图案化SOI衬底的上硅层。 沟槽氧化物层和沟槽衬垫共形地形成在沟槽区域的侧壁和底部上。 沟槽区域底部的沟槽衬垫，沟槽氧化物层和上部硅层被依次构图，以形成埋入绝缘层暴露的深沟槽区域。 存在于深沟槽区域外部的沟槽区域对应于浅沟槽区域。

    Thin film actuated mirror array in an optical projection system and method for manufacturing the same
    67.
    发明授权
    Thin film actuated mirror array in an optical projection system and method for manufacturing the same 失效
    光学投影系统中的薄膜致动反射镜阵列及其制造方法

    公开(公告)号：US5917645A

    公开(公告)日：1999-06-29

    申请号：US988359

    申请日：1997-12-10

    申请人： Dong-Hoon Min ,  Sang-Wook Park

    发明人： Dong-Hoon Min ,  Sang-Wook Park

    IPC分类号： G02B26/08 ,  G02B7/182 ,  H01L41/053

    CPC分类号： G02B26/0858

    摘要： Thin film AMA in an optical projection system and a method for manufacturing the same are disclosed. The thin film AMA has a substrate having an electrical wiring for receiving a first signal applied from outside and transmitting the first signal, a first metal layer having a connecting terminal, a first passivation layer, a second metal layer, an actuator, and a reflecting member. The actuator has a supporting layer, a bottom electrode, an active layer, and a top electrode. An incident light from a light source may be excluded by means of the second metal layer formed on the first metal layer. Mis-operation of actuator due to a photo leakage current caused by an incident light can be prevented before a first signal and a second signal are respectively applied to the bottom electrode and the top electrode.

    摘要翻译： 公开了一种光学投影系统中的薄膜AMA及其制造方法。 薄膜AMA具有基板，其具有用于接收从外部施加的第一信号并传输第一信号的电布线，具有连接端子的第一金属层，第一钝化层，第二金属层，致动器和反射 会员。 致动器具有支撑层，底部电极，有源层和顶部电极。 可以通过形成在第一金属层上的第二金属层来排除来自光源的入射光。 在将第一信号和第二信号分别施加到底部电极和顶部电极之前，可以防止由于入射光引起的光泄漏电流导致致动器的误操作。

    Method of inducing differentiation of embryonic stem cells into hemangioblast
    68.
    发明授权
    Method of inducing differentiation of embryonic stem cells into hemangioblast 有权
    诱导胚胎干细胞分化为成血管细胞的方法

    公开(公告)号：US08507275B2

    公开(公告)日：2013-08-13

    申请号：US12858747

    申请日：2010-08-18

    申请人： Yong-Mahn Han ,  Sang-Wook Park ,  Eun-Young Lee

    发明人： Yong-Mahn Han ,  Sang-Wook Park ,  Eun-Young Lee

    IPC分类号： C12N5/00 ,  C12N5/02 ,  C12N5/08 ,  A01N61/00 ,  A01N37/18

    CPC分类号： C12N5/069 ,  C12N5/0647 ,  C12N5/0691 ,  C12N5/0692 ,  C12N2501/115 ,  C12N2501/155 ,  C12N2501/165 ,  C12N2501/999 ,  C12N2506/02 ,  C12N2506/28

    摘要： The present invention relates to a composition for inducing embryonic stem cell differentiation comprising a MEK/ERK (mitogen-activated protein kinase kinase/extracellular regulated kinase) signal transduction inhibitor and BMP (bone morphogenetic protein), and a method for inducing differentiation of embryonic stem cells into mesodermal cells using the same. Further, the mesodermal cells obtained by the above method are able to differentiate into various mesenchymal tissue cells. In particular, the present invention relates to a method for inducing differentiation into hemangioblast by culturing the mesodermal cells obtained by the above method in the presence of VEGF (vascular endothelial cell growth factor) and bFGF (basic fibroblast growth factor). The differentiated hemangioblasts can be further differentiated into vascular endothelial cells, vascular smooth muscle cells, and hematopoietic stem cells under various culture conditions.

    摘要翻译： 本发明涉及一种用于诱导胚胎干细胞分化的组合物，其包含MEK / ERK（丝裂原活化蛋白激酶激酶/细胞外调节激酶）信号转导抑制剂和BMP（骨形态发生蛋白）），以及诱导胚胎干细胞分化的方法 细胞使用相同的细胞进入中胚层细胞。 此外，通过上述方法获得的中胚层细胞能够分化成各种间充质组织细胞。 特别地，本发明涉及通过在VEGF（血管内皮细胞生长因子）和bFGF（碱性成纤维细胞生长因子）的存在下培养通过上述方法获得的中胚层细胞来诱导分化为成血管细胞成分的方法。 分化的成血管细胞可以在各种培养条件下进一步分化成血管内皮细胞，血管平滑肌细胞和造血干细胞。