公开(公告)号：US20210034331A1

公开(公告)日：2021-02-04

申请号：US16766426

申请日：2018-12-12

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA

IPC: G06F7/544 ,  H01L43/02 ,  H01L43/10 ,  G06N3/04 ,  G01R31/50

Abstract: A product-sum operation device includes a product operator, a sum operator, and a malfunction determiner. The product operator includes a plurality of product operation elements (10AA) to (10AC), and each of the plurality of product operation elements (10AA) to (10AC) is a resistance change element. The sum operator includes an output detector that detects the sum of outputs from the plurality of product operation elements (10AA) to (10AC). The malfunction determiner determines that a malfunction has occurred when the sum detected by the output detector exceeds a specified value. The specified value is a value equal to or greater than a maximum value of the sum that can be detected by the output detector when the plurality of product operation elements (10AA) to (10AC) all operate normally.

公开(公告)号：US20200334015A1

公开(公告)日：2020-10-22

申请号：US16759529

申请日：2019-02-27

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA ,  Tomoyuki SASAKI

IPC: G06F7/544 ,  G06F7/523 ,  G06F7/50 ,  G06F7/38 ,  G06F7/02 ,  G06N3/063

Abstract: A multiply and accumulate calculation device includes a multiple calculation unit and a accumulate calculation unit. The multiple calculation unit includes a plurality of multiple calculation elements, which are variable resistance elements, and at least one reference element. The accumulate calculation unit includes an output detector configured to detect a total value of at least outputs from the plurality of multiple calculation elements. Each of the plurality of multiple calculation elements is a magnetoresistance effect element including a magnetized free layer having a magnetic domain wall, a magnetization fixed layer in which a magnetization direction is fixed, and a nonmagnetic layer sandwiched between the magnetized free layer and the magnetized fixed layer. The reference element is a reference magnetoresistance effect element having a magnetization free layer that does not have the magnetic domain wall.

公开(公告)号：US20200259072A1

公开(公告)日：2020-08-13

申请号：US16760169

申请日：2019-01-09

Applicant: TDK CORPORATION

Inventor： Kuniyasu ITO ,  Tatsuo SHIBATA

IPC: H01L43/02 ,  H01F10/32 ,  H01L27/22 ,  G11C11/16 ,  H01F41/32 ,  H01L43/12

Abstract: A magnetic domain wall movement type magnetic recording element includes: a first ferromagnetic layer which includes a ferromagnetic body; a non-magnetic layer which faces the first ferromagnetic layer; and a magnetic recording layer which faces a surface of the non-magnetic layer on a side opposite to the first ferromagnetic layer and extends in a first direction. The magnetic recording layer has a concave-convex structure on a second surface opposite to a first surface which faces the non-magnetic layer.

公开(公告)号：US20190325903A1

公开(公告)日：2019-10-24

申请号：US16277045

申请日：2019-02-15

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Katsuyuki NAKADA ,  Tatsuo SHIBATA

IPC: G11B5/39 ,  H01F10/32 ,  H01F10/193 ,  G11C11/16 ,  H01L27/105 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L29/82

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula AGa2Ox (0

公开(公告)号：US20190035446A1

公开(公告)日：2019-01-31

申请号：US16079436

申请日：2017-06-09

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA ,  Tomoyuki SASAKI

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8239 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: An exchange bias utilization type magnetization rotational element includes an anti-ferromagnetic driving layer which is made of first region and second region anti-ferromagnetisms, and a third region anti-ferromagnetism positioned between the first and second regions, a magnetic coupling layer anti-ferromagnetism which is magnetically coupled to the anti-ferromagnetic driving layer anti-ferromagnetism in the third region anti-ferromagnetism, a first electrode layer anti-ferromagnetism which is bonded to the first region anti-ferromagnetism; and a second electrode layer anti-ferromagnetism which is bonded to the second region anti-ferromagnetism.

公开(公告)号：US20180068680A1

公开(公告)日：2018-03-08

申请号：US15554066

申请日：2016-03-29

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Katsuyuki NAKADA ,  Tatsuo SHIBATA

IPC: G11B5/39 ,  G11C11/16 ,  H01F10/193 ,  H01L27/22 ,  H01L29/82

CPC classification number: G11B5/3909 ,  G11B2005/3996 ,  G11C11/161 ,  H01F1/405 ,  H01F10/1936 ,  H01L27/105 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula AGa2Ox (0