公开(公告)号：US4290803A

公开(公告)日：1981-09-22

申请号：US159097

申请日：1980-06-13

申请人： Shigeaki Maruhashi ,  Morihiro Hasegawa ,  Takashi Yamauchi

发明人： Shigeaki Maruhashi ,  Morihiro Hasegawa ,  Takashi Yamauchi

IPC分类号： C21B5/02 ,  C21C1/02 ,  C21C7/02 ,  C22B9/10

CPC分类号： C21C1/02 ,  C21B5/02

摘要： A process for dephosphorization-denitrification of Cr-containing pig iron by oxidizing refining is disclosed. Said process comprises maintaining the Si content of the molten iron at not more than 0.2%, contacting it with a slag comprising at least one of fluorides and chlorides of alkaline earth metals, at least one of lithium oxide and carbonate, and at least one of oxides of iron and nickel, while controlling oxidation of Cr.

摘要翻译： 公开了一种通过氧化精炼使含Cr生铁脱磷脱氮的方法。 所述方法包括将铁水的Si含量维持在不超过0.2％，与含有至少一种氟化物和碱土金属氯化物，至少一种氧化锂和碳酸盐的矿渣，以及至少一种 铁和镍的氧化物，同时控制Cr的氧化。

公开(公告)号：US08610101B2

公开(公告)日：2013-12-17

申请号：US13359880

申请日：2012-01-27

申请人： Takashi Yamauchi ,  Shosuke Fujii ,  Reika Ichihara

发明人： Takashi Yamauchi ,  Shosuke Fujii ,  Reika Ichihara

IPC分类号： H01L29/02

CPC分类号： H01L45/085 ,  H01L27/2463 ,  H01L45/1266 ,  H01L45/148

摘要： According to one embodiment, there are provided a first electrode, a second electrode containing a 1B group element having an Al element added thereto, and a variable resistive layer disposed between the first electrode and the second electrode and having a silicon element.

摘要翻译： 根据一个实施例，提供了第一电极，包含添加有Al元素的1B族元素的第二电极和设置在第一电极和第二电极之间并具有硅元素的可变电阻层。

公开(公告)号：US08269921B2

公开(公告)日：2012-09-18

申请号：US12805018

申请日：2010-07-07

申请人： Satoshi Ohkuma ,  Atsuko Kamada ,  Yoshiko Ishimaru ,  Kenji Muneuchi ,  Hidesato Hagiwara ,  Takashi Yamauchi ,  Noriko Asahi

发明人： Satoshi Ohkuma ,  Atsuko Kamada ,  Yoshiko Ishimaru ,  Kenji Muneuchi ,  Hidesato Hagiwara ,  Takashi Yamauchi ,  Noriko Asahi

IPC分类号： G02F1/1335

CPC分类号： G02B5/201 ,  C09B67/0033 ,  C09B67/009 ,  G02B5/223 ,  G02F1/133514 ,  G02F1/133603 ,  G02F1/134363

摘要： A liquid crystal display device which includes a backlight device provided with an LED, and a color filter having colored layers of plural colors including a green layer, wherein the green layer of the color filter contains brominated zinc phthalocyanine green pigment and a dielectric loss tangent of the green layer at a driving frequency of a liquid crystal display device is confined to not more than 0.02.

摘要翻译： 一种液晶显示装置，其特征在于，具备配置有LED的背光源装置和具有绿色层的多色着色层的滤色器，其中，所述滤色片的生坯层含有溴化锌酞菁绿色颜料，介电损耗角正切 在液晶显示装置的驱动频率处的绿色层被限制在不大于0.02。

公开(公告)号：US08053758B2

公开(公告)日：2011-11-08

申请号：US12549140

申请日：2009-08-27

申请人： Takashi Yamauchi ,  Yoshifumi Nishi ,  Hiroto Honda ,  Kei Masunishi ,  Shinji Murai ,  Masumi Saitoh

发明人： Takashi Yamauchi ,  Yoshifumi Nishi ,  Hiroto Honda ,  Kei Masunishi ,  Shinji Murai ,  Masumi Saitoh

IPC分类号： H01L29/08 ,  H01L29/15 ,  H01L31/0352 ,  H01L31/0256 ,  H01L31/0232

CPC分类号： H01L27/14645 ,  H01L27/14683 ,  H01L31/0352

摘要： A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal.

摘要翻译： 提供了用于校正输入信号并输出​​校正信号的半导体器件。 半导体器件包括半导体层，形成在半导体层的一个表面上并用作输入信号的输入端的多个第一导体，第二导​​体的数量大于第一导体的密度高于 在半导体层的另一面形成的第一导体的第一导体的高杂质浓度区域设置在第二导体和半导体层之间的界面的半导体层侧，形成在另一面上的绝缘层， 多个第三导体，形成在绝缘层上并用作用于输出处理信号的输出端。

公开(公告)号：US20100271578A1

公开(公告)日：2010-10-28

申请号：US12662554

申请日：2010-04-22

申请人： Satoshi Ohkuma ,  Noriko Asahi ,  Takashi Yamauchi ,  Yasuyuki Demachi ,  Takaaki Kurata ,  Yutaka Ishii ,  Yoshiki Akatani

发明人： Satoshi Ohkuma ,  Noriko Asahi ,  Takashi Yamauchi ,  Yasuyuki Demachi ,  Takaaki Kurata ,  Yutaka Ishii ,  Yoshiki Akatani

IPC分类号： G02F1/1335 ,  C09B11/12 ,  G02F1/361 ,  G02B5/22 ,  H01J1/62

CPC分类号： G03F7/0007 ,  G02F1/133514

摘要： Disclosed is a dye-containing blue color composition for color filter, including a triarylmethane-based dye having a structure represented by the following formula (1): wherein R1, R2, R3, R4, R5 and R6 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms which may have a substituent, a phenyl group which may have a substituent or a benzyl group which may have a substituent, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19 and R20 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms which may have a substituent or a halogen atom and X represents a tristrifluoromethanesulfonylmethide anion.

摘要翻译： 公开了一种用于滤色器的含染料的蓝色组合物，包括具有由下式（1）表示的结构的三芳基甲烷系染料：其中R1，R2，R3，R4，R5和R6各自独立地表示氢原子， 可以具有取代基的碳原子数为1〜6的烷基，可以具有取代基的苯基或可具有取代基的苄基可以具有取代基的基团，可以具有取代基的可以具有取代基的可以具有取代基的苄基，R7，R8，R9，R10，R11，R12，R13，R14，R15 R16，R17，R18，R19和R20各自独立地表示氢原子，可以具有取代基的碳原子数1〜6的烷基或卤素原子，X表示三（三氟甲基）磺酰基甲基阴离子。

公开(公告)号：US20100271569A1

公开(公告)日：2010-10-28

申请号：US12805018

申请日：2010-07-07

申请人： Satoshi Ohkuma ,  Atsuko Kamada ,  Yoshiko Ishimaru ,  Kenji Muneuchi ,  Hidesato Hagiwara ,  Takashi Yamauchi ,  Noriko Asahi

发明人： Satoshi Ohkuma ,  Atsuko Kamada ,  Yoshiko Ishimaru ,  Kenji Muneuchi ,  Hidesato Hagiwara ,  Takashi Yamauchi ,  Noriko Asahi

IPC分类号： G02F1/1335

CPC分类号： G02B5/201 ,  C09B67/0033 ,  C09B67/009 ,  G02B5/223 ,  G02F1/133514 ,  G02F1/133603 ,  G02F1/134363

摘要： A liquid crystal display device which includes a backlight device provided with an LED, and a color filter having colored layers of plural colors including a green layer, wherein the green layer of the color filter contains brominated zinc phthalocyanine green pigment and a dielectric loss tangent of the green layer at a driving frequency of a liquid crystal display device is confined to not more than 0.02.

摘要翻译： 一种液晶显示装置，其特征在于，具备配置有LED的背光源装置和具有绿色层的多色着色层的滤色器，其中，所述滤色片的生坯层含有溴化锌酞菁绿色颜料，介电损耗角正切 在液晶显示装置的驱动频率处的绿色层被限制在不大于0.02。

公开(公告)号：US07807538B2

公开(公告)日：2010-10-05

申请号：US11898295

申请日：2007-09-11

申请人： Takashi Yamauchi ,  Atsuhiro Kinoshita ,  Yoshinori Tsuchiya ,  Junji Koga

发明人： Takashi Yamauchi ,  Atsuhiro Kinoshita ,  Yoshinori Tsuchiya ,  Junji Koga

IPC分类号： H01L21/336

CPC分类号： H01L29/66795 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/47 ,  H01L29/66507 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/66643 ,  H01L29/7833 ,  H01L29/7848 ,  H01L29/785

摘要： A metal insulator semiconductor field effect transistor (MISFET) having a strained channel region is disclosed. Also disclosed is a method of fabricating a semiconductor device having a low-resistance junction interface. This fabrication method includes the step of forming a gate electrode above a silicon substrate with a gate insulator film being sandwiched therebetween. Then, form a pair of heavily-doped p (p+) type diffusion layers in or on the substrate surface at both sides of the gate electrode to a concentration of 5×1019 atoms/cm3 or more and yet less than or equal to 1×1021 atoms/cm3. Next, silicidize the p+-type layers by reaction with a metal in the state that each layer is applied a compressive strain.

摘要翻译： 公开了具有应变通道区域的金属绝缘体半导体场效应晶体管（MISFET）。 还公开了一种制造具有低电阻结界面的半导体器件的方法。 该制造方法包括在硅衬底上形成栅电极的步骤，其间夹有栅绝缘膜。 然后，在栅电极两侧的基板表面中或其上形成一对重掺杂的p（p +）型扩散层，其浓度为5×1019原子/ cm3以上且小于等于1× 1021原子/ cm3。 接下来，在各层施加压缩应变的状态下，通过与金属反应来硅化p +型层。

公开(公告)号：US20090152652A1

公开(公告)日：2009-06-18

申请号：US12323770

申请日：2008-11-26

申请人： Yoshifumi NISHI ,  Yoshinori Tsuchiya ,  Takashi Yamauchi ,  Junji Koga

发明人： Yoshifumi NISHI ,  Yoshinori Tsuchiya ,  Takashi Yamauchi ,  Junji Koga

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/4975 ,  H01L21/26506 ,  H01L21/28097 ,  H01L21/28518 ,  H01L21/28537 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823842 ,  H01L23/485 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described herein is a method of manufacturing a semiconductor device realizing higher performance by reducing contact resistance of an electrode. In the method, a gate insulating film, a gate electrode are formed on a semiconductor substrate. A first metal is deposited substrate, and a metal semiconductor compound layer is formed on the surface of the semiconductor substrate by making the first metal and the semiconductor substrate react each other by a first heat treatment. Ions having a mass equal to or larger than atomic weight of Si are implanted into the metal semiconductor compound layer. A second metal is deposited on the metal semiconductor compound layer. An interface layer is formed by making the second metal segregated at an interface between the metal semiconductor compound layer and the semiconductor substrate by diffusing the second metal through the metal semiconductor compound layer by a second heat treatment.

摘要翻译： 这里描述的是通过降低电极的接触电阻来制造实现更高性能的半导体器件的方法。 在该方法中，在半导体衬底上形成栅极绝缘膜，栅电极。 第一金属是沉积衬底，并且通过使第一金属和半导体衬底通过第一热处理而彼此反应，在半导体衬底的表面上形成金属半导体化合物层。 将具有等于或大于Si原子量的质量的离子注入到金属半导体化合物层中。 第二金属沉积在金属半导体化合物层上。 通过使第二金属通过第二热处理使金属半导体化合物层扩散而使第二金属在金属半导体化合物层和半导体基板之间的界面分离而形成界面层。

公开(公告)号：US20090008726A1

公开(公告)日：2009-01-08

申请号：US12051947

申请日：2008-03-20

申请人： Takashi Yamauchi ,  Yoshifumi Nishi ,  Atsuhiro Kinoshita ,  Yoshinori Tsuchiya ,  Junji Koga ,  Koichi Kato

发明人： Takashi Yamauchi ,  Yoshifumi Nishi ,  Atsuhiro Kinoshita ,  Yoshinori Tsuchiya ,  Junji Koga ,  Koichi Kato

IPC分类号： H01L47/00 ,  H01L21/425

CPC分类号： H01L21/823814 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/785

摘要： A method of manufacturing a semiconductor device reducing interface resistance of n-type and p-type MISFETs are provided. According to the method, a gate dielectric film and a gate electrode of the n-type MISFET are formed on a first semiconductor region, a gate dielectric film and a gate electrode of the p-type MISFET are formed on a second semiconductor region, an n-type diffusion layer is formed by ion implantation of As into the first semiconductor region, a first silicide layer is formed by first heat treatment after a first metal containing Ni is deposited on the n-type diffusion layer, the first silicide layer is made thicker by second heat treatment after a second metal containing Ni is deposited on the first silicide layer and second semiconductor region, and third heat treatment is provided after formation of a second silicide layer and ion implantation of B or Mg into the second silicide layer.

摘要翻译： 提供了制造半导体器件降低n型和p型MISFET的界面电阻的方法。 根据该方法，在第一半导体区域上形成栅极电介质膜和n型MISFET的栅电极，在第二半导体区域上形成p型MISFET的栅极电介质膜和栅电极， 通过将As离子注入第一半导体区域形成n型扩散层，在n型扩散层上沉积含有Ni的第一金属之后，通过第一热处理形成第一硅化物层，制作第一硅化物层 在第一硅化物层和第二半导体区域上沉积含有Ni的第二金属沉积第二热处理之后，在形成第二硅化物层和在第二硅化物层中离子注入B或Mg之后提供第三热处理。

公开(公告)号：US20080107955A1

公开(公告)日：2008-05-08

申请号：US11970609

申请日：2008-01-08

申请人： Masato Akita ,  Takashi Yamauchi ,  Masahiro Takashita ,  Eiichi Sakaue ,  Kei Matsuoka

发明人： Masato Akita ,  Takashi Yamauchi ,  Masahiro Takashita ,  Eiichi Sakaue ,  Kei Matsuoka

IPC分类号： H01M8/02

CPC分类号： H01M8/0263 ,  H01M8/0258 ,  H01M8/04186 ,  H01M8/1011 ,  H01M8/241 ,  H01M8/2455 ,  H01M8/2483 ,  Y02E60/523

摘要： A direct type fuel cell power generator comprises an anode electrode including an anode catalyst layer, a cathode electrode including a cathode catalyst layer, a fuel container comprising at least two electromotive portion units, each of which comprises an electrolyte film disposed between the anode electrode and the cathode electrode, the fuel container housing a fuel therein, and a fuel flow path to supply a fuel in the electromotive portion unit. In the power generator, the fuel flow path has a flow path which produces flow-back again from the fuel container to the first electromotive portion unit via the first electromotive portion unit and the second electromotive portion unit, and which is not branched during the flow-back.

摘要翻译： 直接型燃料电池发电机包括阳极电极，阳极电极包括阳极催化剂层，包括阴极催化剂层的阴极电极，包括至少两个电动部分单元的燃料容器，每个电极部分包括设置在阳极电极和 阴极电极，容纳燃料的燃料容器和用于在电动部分单元中供应燃料的燃料流动路径。 在发电机中，燃料流路具有经由第一电动部分单元和第二电动部分单元从燃料容器再次回流到第一电动部分单元的流动路径，并且在流动期间不分支 -背部。