公开(公告)号：US5895933A

公开(公告)日：1999-04-20

申请号：US868050

申请日：1997-06-03

申请人： Hongyong Zhang ,  Yasuhiko Takemura ,  Toru Takayama ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

发明人： Hongyong Zhang ,  Yasuhiko Takemura ,  Toru Takayama ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

IPC分类号： H01L21/20 ,  H01L29/786 ,  H01L21/283

CPC分类号： H01L29/78675 ,  H01L21/2022 ,  H01L21/2026

摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.

公开(公告)号：US5888857A

公开(公告)日：1999-03-30

申请号：US661013

申请日：1996-06-10

申请人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Takeshi Fukunaga ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/00 ,  H01L21/36

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L27/1277 ,  G09G2300/0408

摘要： A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

摘要翻译： 提供了使用晶体硅膜制造诸如薄膜晶体管的半导体器件的方法。 通过选择性地形成包含镍，铁，钴，钌，铑，钯，锇，铱，铂，钪，钛，钒，铬，锰，铜，锌，金，银的薄膜，颗粒或簇而获得晶体硅膜 或其硅化物以岛状，线状，条状，点状或薄膜形式存在于非晶硅膜上或下方，并以它们为起始点，通过在比非晶硅的正常结晶温度低的温度下进行退火， 。 通过在要成为有源层的半导体层上选择性地形成覆盖膜，通过在构成具有薄膜晶体管的动态电路的同时获得泄漏电流低的晶体管和迁移率高的晶体管 晶体管，然后通过其热结晶。

公开(公告)号：US5882960A

公开(公告)日：1999-03-16

申请号：US911912

申请日：1997-08-15

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

IPC分类号： H01L21/20 ,  H01L29/786 ,  H01L21/324

CPC分类号： H01L21/2026 ,  H01L29/78675

摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.

摘要翻译： 公开了一种半导体器件。 半导体器件具有作为有源层区域的晶体硅膜。 结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。 制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

公开(公告)号：US5783468A

公开(公告)日：1998-07-21

申请号：US630628

申请日：1996-04-10

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/77 ,  H01L21/84

CPC分类号： H01L27/1277 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686

摘要： Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous silicon film. This amorphous silicon film is selectively irradiated with laser light or other equivalent intense light to crystallize the amorphous silicon film.

公开(公告)号：US5614733A

公开(公告)日：1997-03-25

申请号：US354502

申请日：1994-12-12

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L27/1277 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686

摘要： A semiconductor device has a first thin film transistor and a second thin film transistor formed on a substrate. Both of the first and second thin film transistor have a crystallized channel region. One of the first and second thin film transistor is doped with a catalyst metal at a sufficient concentration for promoting the crystallization of the channel region which the other of the first and second thin film transistors is not doped with the catalyst metal.

摘要翻译： 半导体器件具有形成在衬底上的第一薄膜晶体管和第二薄膜晶体管。 第一和第二薄膜晶体管都具有晶化的沟道区。 第一和第二薄膜晶体管之一以足够的浓度掺杂有催化剂金属，以促进第一和第二薄膜晶体管中的另一个不掺杂催化剂金属的沟道区的结晶。

公开(公告)号：US5595923A

公开(公告)日：1997-01-21

申请号：US467986

申请日：1995-06-06

申请人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Yasuhiko Takemura ,  Mutsuo Yamamoto

发明人： Hongyong Zhang ,  Hideki Uochi ,  Toru Takayama ,  Yasuhiko Takemura ,  Mutsuo Yamamoto

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L27/1251 ,  H01L21/2022 ,  H01L21/8238 ,  H01L27/0922 ,  H01L27/1237 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675 ,  G02F1/13454 ,  Y10S148/016

摘要： A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorphous silicon, thereby selectively crystallizing the amorphous silicon film. The crystallized region is used as a crystalline silicon TFT which can be used in a peripheral driver circuit of an active matrix circuit. The region which remains amorphous is used as an amorphous silicon TFT which can be used in a pixel circuit. A relatively small amount of a catalyst element for promoting crystallization is added to an amorphous silicon film, and an annealing process is conducted at a temperature which is lower than the distortion temperature of a substrate, thereby crystallizing the amorphous silicon film. A gate insulating film, and a gate electrode are then formed, and an impurity is implanted in a self-alignment manner. A film containing a catalyst element for promoting crystallization is closely contacted with the impurity region, or a relatively large amount of a catalyst element is introduced into the impurity region by an ion implantation or the like. Then, an annealing process is conducted at a temperature which is lower than the distortion temperature of the substrate, thereby activating the doping impurity.

摘要翻译： 形成含有催化剂元素的物质，以与非晶硅膜紧密接触，或将催化剂元素引入到非晶硅膜中。 非晶硅膜在比通常的非晶硅的结晶温度低的温度下退火，从而选择性地使非晶硅膜结晶。 结晶区域用作可用于有源矩阵电路的外围驱动电路的晶体硅T​​FT。 保持非晶形的区域用作可用于像素电路中的非晶硅TFT。 在非晶硅膜中添加相对少量的促进结晶的催化剂元素，并且在比基板的变形温度低的温度下进行退火处理，从而使非晶硅膜结晶。 然后形成栅极绝缘膜和栅电极，并以自对准的方式注入杂质。 含有促进结晶的催化剂元素的膜与杂质区紧密接触，或者通过离子注入等将相对大量的催化剂元素引入杂质区。 然后，在比基板的变形温度低的温度下进行退火处理，从而激活掺杂杂质。

公开(公告)号：US07821011B2

公开(公告)日：2010-10-26

申请号：US12277547

申请日：2008-11-25

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

IPC分类号： H01L33/00

CPC分类号： H01L27/127 ,  G02F1/13454 ,  G02F2001/136245 ,  H01L21/76897 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675

摘要： An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.

摘要翻译： 制造LDD结构以具有期望的高度与栅电极的宽度的纵横比。 首先将栅电极沉积在半导体衬底上，随后以栅电极作为掩模进行离子注入，以形成一对杂质区。 然后对栅电极进行阳极氧化，形成包围电极的氧化膜。 以氧化物膜为掩模，通过离子注入形成高度掺杂的区域，以便在高掺杂区域和位于它们之间的沟道区域之间限定轻掺杂区域。

公开(公告)号：US07435635B2

公开(公告)日：2008-10-14

申请号：US11105404

申请日：2005-04-14

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

IPC分类号： H01L21/336

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/2026 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/41

摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.

摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19原子的浓度熔化含有碳，氮和氧的非晶半导体膜。 通过照射等效于激光束的激光束或高强度光，可以通过照射激光束或低强度光 激光束到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。

公开(公告)号：US06881615B2

公开(公告)日：2005-04-19

申请号：US09978696

申请日：2001-10-18

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L31/20 ,  H01L21/336

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/2026 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/41

摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.

摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19原子的浓度熔化含有碳，氮和氧的非晶半导体膜。 通过照射等效于激光束的激光束或高强度光，可以通过照射激光束或低强度光 激光束到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。

公开(公告)号：US06358784B1

公开(公告)日：2002-03-19

申请号：US09145543

申请日：1998-09-02

申请人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： H01L21331

CPC分类号： H01L29/66757 ,  B60R25/066 ,  H01L21/223 ,  H01L27/14692 ,  Y10T29/41

摘要： A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.

摘要翻译： 一种激光加工制品的方法，包括：将待掺杂杂质的预期制品加热到不高于其熔点的温度，所述制品由选自半导体，金属，绝缘体， 及其组合; 并在包含所述杂质的反应性气体气氛中向所述制品照射激光束，从而使所述杂质物理或化学扩散到所述制品中，与之结合或侵入所述制品。 本发明还提供了一种在激光加工工艺中使用的装置，其特征在于，其具有内部样品保持器和用作样品加热装置的装置，由足够透明的材料制成的窗口， 激光束，包括真空抽出装置的腔室和用于引入含有杂质元素的反应性气体的装置，以脉冲模式操作以将激光束照射到所述腔室的激光装置，以及与所述腔室同步地移动所述腔室的装置 激光照射。