公开(公告)号：US07879182B2

公开(公告)日：2011-02-01

申请号：US10584340

申请日：2004-09-24

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： A system for processing a substrate uniformly by increasing the number of gas discharge holes being arranged per unit area of a shower plate as receding from the center of the shower plate or increasing the radii of the gas discharge holes as receding from the center of the shower plate thereby making the plasma excitation gas flow uniform.

摘要翻译： 一种用于通过增加从喷淋板的中心退出的喷淋板的每单位面积排列的排气孔的数量而均匀地处理基板的系统，或者从喷淋中心离开时增加排气孔的半径 从而使等离子体激发气体流动均匀。

公开(公告)号：US20090229755A1

公开(公告)日：2009-09-17

申请号：US12379805

申请日：2009-03-02

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

IPC分类号： C23F1/08 ,  C23C16/511

CPC分类号： C23C16/45568 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/3244

摘要： A plasma processing apparatus comprises a processing vessel defined by an outer wall and provided with a stage that holds a substrate to be processed thereon, an evacuation system coupled to the processing vessel, a microwave window provided on the processing vessel as a part of the outer wall so as to face the substrate to be processed on the stage, a plasma gas supplying part supplying a plasma gas to the processing vessel, and a microwave antenna provided on the processing vessel in correspondence to the microwave. The plasma gas supplying part includes a porous medium and the plasma gas supplying part supplies the plasma gas through the porous medium.

摘要翻译： 等离子体处理装置包括由外壁限定的处理容器，该处理容器具有保持要处理的基板的台，连接到处理容器的抽空系统，设置在处理容器上的作为外部的一部分的微波窗口 壁，以便在台架上面对要处理的基板，向处理容器供应等离子体气体的等离子体气体供给部分和与微波对应地设置在处理容器上的微波天线。 等离子体气体供给部包括多孔介质，等离子体气体供给部通过多孔介质供给等离子体气体。

公开(公告)号：US07538012B2

公开(公告)日：2009-05-26

申请号：US10558080

申请日：2004-05-19

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： H01L21/322

CPC分类号： H01L21/0212 ,  C23C16/0245 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/3127

摘要： The present invention is made to solve a problem to improve adhesion between a fluorine-containing carbon film and a foundation film. In order to achieve this object, according to the present invention, a fluorine-containing carbon film forming method of forming a fluorine-containing carbon film on a to-be-processed substrate includes: a first process of carrying out plasma excitation of a rare gas, and carrying out a surface treatment of the to-be-processed substrate with the use of the thus-plasma-excited rare gas with a substrate processing apparatus; and a second process of forming the fluorine-containing carbon film on the to-be-processed substrate, wherein the substrate processing apparatus has a microwave antenna electrically connected to a microwave power source.

摘要翻译： 本发明是为了解决提高含氟碳膜和基础膜之间的粘附性的问题而做出的。 为了实现该目的，根据本发明，在被处理基板上形成含氟碳膜的含氟碳膜形成方法包括：进行稀有等离子体激发的第一工序 利用基板处理装置利用等离子体激发的稀有气体进行被处理基板的表面处理， 以及在被处理基板上形成含氟碳膜的第二工序，其中，基板处理装置具有与微波电源电连接的微波天线。

公开(公告)号：US20080302761A1

公开(公告)日：2008-12-11

申请号：US12137088

申请日：2008-06-11

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23F1/02 ,  C23C16/513 ,  H05H1/46

CPC分类号： H05H1/46 ,  C03C17/002 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/32082 ,  H01J37/32238

摘要： A plasma processing system 10 includes a processing chamber 100, a microwave source 700 that outputs a microwave, a coaxial waveguide 315 that transfers the microwave from the microwave source, a plurality of dielectric plates 305 that transmit the microwave transferred through the coaxial waveguide 315 and discharge the microwave into the processing chamber 100, and a metal electrode 310 having a first end and a second end, the first end coupled to the coaxial waveguide 315, the second end disposed on the surface of the dielectric plate 305 facing the substrate. The coaxial waveguide 315 holds the dielectric plate 305 and metal electrode 310 and is securely fastened by a fastening mechanism 500. The coaxial waveguide 315 is given a force by the spring member 515, the force being directed away from the processing chamber 100.

摘要翻译： 等离子体处理系统10包括处理室100，输出微波的微波源700，从微波源传送微波的同轴波导315，传送通过同轴波导315传送的微波的多个介质板305和 将微波排放到处理室100中，以及具有第一端和第二端的金属电极310，第一端耦合到同轴波导315，第二端设置在电介质板305的面向基板的表面上。 同轴波导315保持电介质板305和金属电极310，并通过紧固机构500牢固地固定。同轴波导315被弹簧构件515赋予力，该力被引导离开处理室100。

公开(公告)号：US20070054064A1

公开(公告)日：2007-03-08

申请号：US10566241

申请日：2004-12-24

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi ,  Akihiko Hiroe ,  Masayuki Kitamura

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi ,  Akihiko Hiroe ,  Masayuki Kitamura

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01L21/306 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/463

摘要： A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is maintained at a horizontal position with respect to the linear plasma. A plasma head has an H-plane slot antenna, and slots are arranged alternately on both sides of a centerline of a waveguide at a pitch of λg/2 (λg: wavelength of the microwave with the waveguide). A uniforming line having a distance of n·λg/2 from the slots to an emission end of the plasma head is provided (n: an integral number).

摘要翻译： 微波等离子体处理方法，其中通过微波产生线性等离子体和待处理物体在大气压力下或当物体移动时在大气压附近的压力下进行处理，同时 物体相对于线性等离子体保持在水平位置。 等离子体头具有H平面缝隙天线，并且以波兰的间距（lambdag：具有波导的微波的波长）交替地布置在波导的中心线的两侧。 提供了从槽到发射端等离子体头的距离为n.lambdag / 2的均匀线（n：整数）。

公开(公告)号：US20070020940A1

公开(公告)日：2007-01-25

申请号：US10558080

申请日：2004-05-19

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/0212 ,  C23C16/0245 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/3127

摘要： The present invention is made to solve a problem to improve adhesion between a fluorine-containing carbon film and a foundation film. In order to achieve this object, according to the present invention, a fluorine-containing carbon film forming method of forming a fluorine-containing carbon film on a to-be-processed substrate includes: a first process of carrying out plasma excitation of a rare gas, and carrying out a surface treatment of the to-be-processed substrate with the use of the thus-plasma-excited rare gas with a substrate processing apparatus; and a second process of forming the fluorine-containing carbon film on the to-be-processed substrate, wherein the substrate processing apparatus has a microwave antenna electrically connected to a microwave power source.

摘要翻译： 本发明是为了解决提高含氟碳膜和基础膜之间的粘附性的问题而做出的。 为了实现该目的，根据本发明，在被处理基板上形成含氟碳膜的含氟碳膜形成方法包括：进行稀有等离子体激发的第一工序 利用基板处理装置利用等离子体激发的稀有气体进行被处理基板的表面处理， 以及在被处理基板上形成含氟碳膜的第二工序，其中，基板处理装置具有与微波电源电连接的微波天线。

公开(公告)号：US20060289116A1

公开(公告)日：2006-12-28

申请号：US11488059

申请日：2006-07-18

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32238 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3244

摘要： A plasma processing apparatus comprises a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a plasma gas supply part for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel in correspondence to the substrate to be processed, and a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed on the stage, wherein the process gas supply part comprises a plurality of first apertures for passing through plasma formed in the interior of the processing vessel, a process gas passage capable of connecting to a process gas source, a plurality of second apertures in communication with the process gas passage and a diffusion part provided opposite to the second aperture for diffusing process gas released from the second aperture.

摘要翻译： 等离子体处理装置包括由外壁限定的处理容器，具有用于保持要处理的基板的台，连接到处理容器的抽空系统，用于将等离子体气体供应到处理容器的内部的等离子体气体供应部 设置在处理容器上的与要处理的基板相对应的微波天线，以及处理气体供给部，其设置在台面上的待处理基板与等离子体气体供给部之间，以与待处理基板相对， 其中处理气体供应部分包括用于通过形成在处理容器内部的等离子体的多个第一孔，能够连接到处理气体源的处理气体通道，与第二孔连通的多个第二孔 处理气体通道和与第二孔相对设置的用于扩散从第二孔释放的处理气体的扩散部分。

公开(公告)号：US07115184B2

公开(公告)日：2006-10-03

申请号：US10276673

申请日：2002-03-28

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01J37/32238 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3244

摘要： A plasma processing apparatus includes a processing vessel, a means for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a means for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel, and a process gas supply part comprised of two components. The first component includes a plurality of first apertures for passing through plasma formed in interior of the processing vessel, a process gas passage, and a plurality of second apertures in communication with the process gas passage. The second component includes a plurality of third apertures axially aligned with the first apertures in the first component and diffusion surfaces upon recessed areas of the second component, located opposite to the second apertures in the first component.

摘要翻译： 等离子体处理装置包括处理容器，用于保持要处理的基板的装置，耦合到处理容器的抽空系统，用于向处理容器的内部供应等离子体气体的装置，设置在处理容器上的微波天线 ，以及由两个部件组成的工艺气体供给部。 第一部件包括用于穿过形成在处理容器内部的等离子体的多个第一孔，处理气体通道和与处理气体通道连通的多个第二孔。 第二部件包括与第一部件中的第一孔轴向对齐的多个第三孔和位于第二部件的与第一部件中的第二孔相对的凹陷区域上的扩散表面。

公开(公告)号：US06893970B2

公开(公告)日：2005-05-17

申请号：US10015446

申请日：2001-12-12

申请人： Norio Kanetsuki ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Norio Kanetsuki ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23F4/00 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768

CPC分类号： C23F4/00 ,  H01L21/32136

摘要： According to a plasma processing method, a process gas supplied into a process chamber is used to generate plasma from the process gas and process a substrate placed in the process chamber by means of the plasma. The substrate includes stacked films of at least two types to be etched by the plasma, and, according to any of the films that is to be etched, a change is made in the process gas in the plasma generation period. Accordingly, the time required for any process except for the main plasma process can be shortened so that the total time for the entire plasma process can be shortened to improve the processing speed.

摘要翻译： 根据等离子体处理方法，使用供应到处理室中的处理气体从处理气体产生等离子体，并通过等离子体处理放置在处理室中的衬底。 衬底包括由等离子体蚀刻的至少两种类型的堆叠膜，并且根据要蚀刻的任何膜，在等离子体产生周期中的处理气体中发生变化。 因此，除了主等离子体处理之外的任何处理所需的时间可以缩短，从而可以缩短整个等离子体处理的总时间，从而提高处理速度。

公开(公告)号：US20050092437A1

公开(公告)日：2005-05-05

申请号：US10493946

申请日：2003-07-03

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32 ,  H01L21/31 ,  C23F1/00

CPC分类号： C23C16/45568 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/3244

摘要： A plasma processing apparatus comprises a processing vessel defined by an outer wall and provided with a stage that holds a substrate to be processed thereon, an evacuation system coupled to the processing vessel, a microwave window provided on the processing vessel as a part of the outer wall so as to face the substrate to be processed on the stage, a plasma gas supplying part supplying a plasma gas to the processing vessel, and a microwave antenna provided on the processing vessel in correspondence to the microwave. The plasma gas supplying part includes a porous medium and the plasma gas supplying part supplies the plasma gas through the porous medium.

摘要翻译： 等离子体处理装置包括由外壁限定的处理容器，该处理容器具有保持要处理的基板的台，连接到处理容器的抽空系统，设置在处理容器上的作为外部的一部分的微波窗口 壁，以便在台架上面对要处理的基板，向处理容器供应等离子体气体的等离子体气体供给部分和与微波对应地设置在处理容器上的微波天线。 等离子体气体供给部包括多孔介质，等离子体气体供给部通过多孔介质供给等离子体气体。