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67 条记录 (耗时 0.04 秒)

    Method for producing a semiconductor chip emitting radiation, semiconductor chip emitting radiation, and component emitting radiation
    61.
    发明授权
    Method for producing a semiconductor chip emitting radiation, semiconductor chip emitting radiation, and component emitting radiation 有权
    用于制造发射辐射的半导体芯片，发射辐射的半导体芯片和发射辐射的部件的方法

    公开(公告)号：US08962361B2

    公开(公告)日：2015-02-24

    申请号：US13991408

    申请日：2011-11-23

    申请人： Kirstin Petersen ,  Frank Baumann ,  Dominik Eisert ,  Hailing Cui

    发明人： Kirstin Petersen ,  Frank Baumann ,  Dominik Eisert ,  Hailing Cui

    IPC分类号： H01L21/00 ,  H01L33/50

    CPC分类号： H01L33/50 ,  H01L33/504 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

    摘要： A method is provided for producing a radiation-emitting semiconductor chip, in which a first wavelength-converting layer is applied over the radiation exit face of a semiconductor body. The application method is selected from the following group: sedimentation, electrophoresis. In addition, a second wavelength-converting layer is applied over the radiation exit face of the semiconductor body. The second wavelength-converting layer is either produced in a separate method step and then applied or the application method is sedimentation, electrophoresis or printing. Furthermore, a radiation-emitting semiconductor chip and a radiation-emitting component are provided.

    摘要翻译： 提供了一种制造辐射发射半导体芯片的方法，其中将第一波长转换层施加在半导体本体的辐射出射面上。 应用方法选自下列组别：沉淀，电泳。 此外，在半导体本体的辐射出射面上施加第二波长转换层。 第二波长转换层是以单独的方法步骤生产的，然后施加或应用方法是沉降，电泳或印刷。 此外，提供了发射辐射的半导体芯片和发射辐射的部件。

    Optoelectronic component
    62.
    发明授权
    Optoelectronic component 有权
    光电元件

    公开(公告)号：US08598604B2

    公开(公告)日：2013-12-03

    申请号：US12088250

    申请日：2006-09-27

    申请人： Dominik Eisert ,  Norbert Linder ,  Raimund Oberschmid ,  Dirk Berben ,  Frank Jermann ,  Martin Zachau

    发明人： Dominik Eisert ,  Norbert Linder ,  Raimund Oberschmid ,  Dirk Berben ,  Frank Jermann ,  Martin Zachau

    IPC分类号： H04N9/31

    CPC分类号： H01L33/46 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.

    摘要翻译： 公开了一种具有半导体本体的包括有源半导体层序列的光电子部件，其适于产生从半导体本体的正面发射的第一波长的电磁辐射。 该元件还包括在其发射方向上跟随半导体本体的第一波长转换物质，其将第一波长的辐射转换成不同于第一波长的第二波长的辐射，以及在有源半导体层序列之间的第一选择性反射层 以及选择性地反射第二波长的辐射并对第一波长的辐射透明的第一波长转换物质。

    Semiconductor component
    66.
    发明申请
    Semiconductor component 有权
    半导体元件

    公开(公告)号：US20070181891A1

    公开(公告)日：2007-08-09

    申请号：US11731914

    申请日：2007-04-02

    申请人： Dominik Eisert ,  Stefan Illek ,  Wolfgang Schmid

    发明人： Dominik Eisert ,  Stefan Illek ,  Wolfgang Schmid

    IPC分类号： H01L31/12

    CPC分类号： H01L33/20 ,  H01L23/3677 ,  H01L24/29 ,  H01L24/83 ,  H01L24/95 ,  H01L2224/29014 ,  H01L2224/29124 ,  H01L2224/29164 ,  H01L2224/29169 ,  H01L2224/83203 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

    摘要： A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed for the purpose of reducing or compensating for the thermal stresses in the component. The thermal stresses arise as a result of temperature changes during processing and during operation and on account of the different expansion coefficients of the semiconductor and carrier substrate. The carrier substrate is patterned in such a way that the thermal stresses are reduced or compensated for sufficiently to ensure that the component does not fail.

    摘要翻译： 公开了具有发光半导体层或发光半导体元件，两个接触位置和垂直或水平图案化载体衬底的半导体部件以及用于制造半导体部件的方法，用于减少或补偿热 组件中的压力。 热应力由于处理过程中和工作期间的温度变化以及由于半导体和载体衬底的不同膨胀系数而产生。 载体基板被图案化，使得热应力被减少或补偿以充分确保部件不失败。

    Luminescent diode chip that is flip-chip mounted on a carrier, and method for production thereof
    67.
    发明授权
    Luminescent diode chip that is flip-chip mounted on a carrier, and method for production thereof 有权
    背面安装在载体上的发光二极管芯片及其制造方法

    公开(公告)号：US06927425B2

    公开(公告)日：2005-08-09

    申请号：US10401825

    申请日：2003-03-28

    申请人： Volker Klaus Harle ,  Dominik Eisert

    发明人： Volker Klaus Harle ,  Dominik Eisert

    IPC分类号： H01L33/62 ,  H01L33/00 ,  H01L21/00 ,  H01L21/44 ,  H01L23/48 ,  H01L23/52

    CPC分类号： H01L33/62 ,  H01L2224/48463 ,  H01L2924/01068 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A luminescent diode chip for flip-chip mounting on a carrier, having a conductive substrate (12), a semiconductor body (14) that contains a photon-emitting active zone and that is joined by an underside to the substrate (12), and a contact (18), disposed on a top side of the semiconductor body (14), for making an electrically conductive connection with the carrier (30) upon the flip-chip mounting of the chip, whereby either the carrier is solder covered or a layer of solder is applied to the contact. An insulating means (40, 42, 44, 46, 48) is provided on the chip, for electrically insulating free faces of the semiconductor body (14) and free surfaces of the substrate (12) from the solder.

    摘要翻译： 一种用于倒装芯片安装在载体上的发光二极管芯片，具有导电基板（12），包含光子发射活性区并通过下侧连接到基板（12）的半导体本体（14），以及 设置在所述半导体本体（14）的顶侧上的用于在所述芯片的倒装芯片安装时与所述载体（30）进行导电连接的触点（18），由此所述载体被焊接覆盖或 将焊料层施加到触点。 绝缘装置（40,42,44,46,48）设置在芯片上，用于使半导体本体（14）的自由面和衬底（12）与焊料的自由表面电绝缘。