公开(公告)号：US20080267721A1

公开(公告)日：2008-10-30

申请号：US12173661

申请日：2008-07-15

申请人： John M. de Larios ,  Mike Ravkin ,  John Parks ,  Mikhail Korolik ,  Fred C. Redeker

发明人： John M. de Larios ,  Mike Ravkin ,  John Parks ,  Mikhail Korolik ,  Fred C. Redeker

IPC分类号： B65G51/01

CPC分类号： H01L21/67784 ,  H01L21/67057

摘要： A method for transporting a substrate is provided. In this method, a non-Newtonian fluid is provided and the substrate is suspended in the non-Newtonian fluid. The non-Newtonian fluid is capable of supporting the substrate. Thereafter, a supply force is applied on the non-Newtonian fluid to cause the non-Newtonian fluid to flow, whereby the flow is capable of moving the substrate along a direction of the flow. Apparatuses and systems for transporting the substrate using the non-Newtonian fluid also are described.

摘要翻译： 提供了一种输送基板的方法。 在该方法中，提供了非牛顿流体，并将基底悬挂在非牛顿流体中。 非牛顿流体能够支撑基底。 此后，向非牛顿流体施加供应力以使非牛顿流体流动，由此流动能够沿着流动方向移动基底。 还描述了使用非牛顿流体输送基底的装置和系统。

公开(公告)号：US07252097B2

公开(公告)日：2007-08-07

申请号：US10606022

申请日：2003-06-24

申请人： John M. Boyd ,  John M. de Larios ,  Michael Ravkin ,  Fred C. Redeker

发明人： John M. Boyd ,  John M. de Larios ,  Michael Ravkin ,  Fred C. Redeker

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67028 ,  G03F7/70341 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

摘要： A system and method for processing a wafer includes applying a process to the wafer. The process being supported by a surface tension gradient device. A result of the process is monitored. The monitored result is output.

摘要翻译： 用于处理晶片的系统和方法包括将工艺应用于晶片。 该过程由表面张力梯度装置支撑。 监视该过程的结果。 输出监视结果。

公开(公告)号：US07191787B1

公开(公告)日：2007-03-20

申请号：US10357664

申请日：2003-02-03

申请人： Fred C. Redeker ,  John M. Boyd ,  John Parks

发明人： Fred C. Redeker ,  John M. Boyd ,  John Parks

IPC分类号： B06B3/12

CPC分类号： B08B3/12 ,  B08B7/0021 ,  H01L21/67057 ,  Y10S134/902

摘要： An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

摘要翻译： 提供了一种使用高频声能与超临界流体来执行半导体晶片（“晶片”）清洁工艺的装置和方法。 高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。 通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。 此外，晶片清洗过程受益于近零表面张力，高扩散性，高密度和化学混合能力的超临界流体性质。

公开(公告)号：US07014545B2

公开(公告)日：2006-03-21

申请号：US10754997

申请日：2004-01-10

申请人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

IPC分类号： B24B7/00

CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

公开(公告)号：US06869332B2

公开(公告)日：2005-03-22

申请号：US10412038

申请日：2003-04-10

申请人： Fred C. Redeker ,  Rajeev Bajaj

发明人： Fred C. Redeker ,  Rajeev Bajaj

IPC分类号： B24B37/013 ,  B24B49/02 ,  B24B49/12 ,  H01L21/00 ,  H01L21/321 ,  B24B7/22

CPC分类号： B24B37/013 ,  B24B49/02 ,  B24B49/12 ,  G01B7/105

摘要： A method of chemical mechanical polishing a metal layer on a substrate in which the substrate is polished at a first polishing rate. Polishing is monitored with an eddy current monitoring system, and the polishing rate is reduced to a second polishing rate when the eddy current monitoring system indicates that a predetermined thickness of the metal layer remains on the substrate. Then polishing is monitored with an optical monitoring system, and polishing is halted when the optical monitoring system indicates that an underlying layer is at least partially exposed.

摘要翻译： 在基板上以第一抛光速率抛光基板的化学机械抛光金属层的方法。 用涡流监测系统监测抛光，当涡流监测系统指示金属层的预定厚度保留在基板上时，抛光速率降低到第二抛光速率。 然后用光学监测系统监测抛光，并且当光学监测系统指示底层至少部分暴露时，停止抛光。

公开(公告)号：US06676497B1

公开(公告)日：2004-01-13

申请号：US09658417

申请日：2000-09-08

申请人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

IPC分类号： B24B700

CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

公开(公告)号：US06645061B1

公开(公告)日：2003-11-11

申请号：US09441633

申请日：1999-11-16

申请人： Doyle E. Bennett ,  Thomas H. Osterheld ,  Fred C. Redeker ,  Ginetto Addiego

发明人： Doyle E. Bennett ,  Thomas H. Osterheld ,  Fred C. Redeker ,  Ginetto Addiego

IPC分类号： B24D1100

CPC分类号： B24B37/26

摘要： A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

摘要翻译： 一种用于化学机械抛光装置的抛光垫。 抛光垫包括多个同心的圆形槽。 抛光垫可以包括具有不同宽度和间隔的凹槽的多个区域。

公开(公告)号：US06592438B2

公开(公告)日：2003-07-15

申请号：US09759556

申请日：2001-01-12

申请人： Robert D. Tolles ,  Steven T. Mear ,  Gopalakrishna B. Prabhu ,  Sidney Huey ,  Fred C. Redeker

发明人： Robert D. Tolles ,  Steven T. Mear ,  Gopalakrishna B. Prabhu ,  Sidney Huey ,  Fred C. Redeker

IPC分类号： B24B700

CPC分类号： B24B37/26 ,  B24B37/16 ,  Y10S451/921

摘要： A chemical mechanical polishing system is provided having one more polishing stations. The polishing stations include a platen and pad mounted to an upper surface of the platen. The upper surface of the platen is patterned to define a raised area and a recessed area. The raised area provides a rigid mounting surface for the pad and the recessed area provides the pad a desired degree of flexibility and compliance of the pad when brought into contact with a substrate.

摘要翻译： 提供了具有一个以上抛光站的化学机械抛光系统。 抛光站包括安装到压板上表面的压板和衬垫。 将压板的上表面图案化以限定凸起区域和凹陷区域。 凸起区域为衬垫提供刚性的安装表面，并且凹陷区域在衬垫与衬底接触时向衬垫提供期望程度的柔性和顺应性。

公开(公告)号：US06537144B1

公开(公告)日：2003-03-25

申请号：US09505899

申请日：2000-02-17

申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24D1100

CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

公开(公告)号：US06520840B1

公开(公告)日：2003-02-18

申请号：US09692723

申请日：2000-10-19

申请人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： C09K3/1463 ,  C09G1/02

摘要： A CMP slurry is formulated with an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. The slurry may further include abrasive particles, inhibitors, pH adjusting agents, and combinations thereof.

摘要翻译： 用能够氧化经历平坦化的金属的氧化剂配制CMP浆料，并产生与氧化金属络合的络合剂，从而使过蚀刻最小化。 浆料还可包括磨料颗粒，抑制剂，pH调节剂及其组合。