FLUORESCENT IMAGE ACQUISITION AND PROJECTION APPARATUS FOR REAL-TIME VISUALIZATION OF INVISIBLE FLUORESCENT SIGNAL
    61.
    发明申请
    FLUORESCENT IMAGE ACQUISITION AND PROJECTION APPARATUS FOR REAL-TIME VISUALIZATION OF INVISIBLE FLUORESCENT SIGNAL 审中-公开
    用于实时可视化荧光信号的荧光图像采集和投影设备

    公开(公告)号:US20160183802A1

    公开(公告)日:2016-06-30

    申请号:US15063799

    申请日:2016-03-08

    CPC classification number: A61B5/0071 A61B5/7271

    Abstract: A fluorescent image acquisition and projection method includes the steps of generating, by a plurality of light sources, invisible fluorescence under control of a control device and obtaining, by a detection unit, a signal of an invisible fluorescent image from a target object. The method further includes the steps of receiving from the detection unit and processing the invisible fluorescent image signal of the target object into a visible fluorescent signal, transmitting the visible fluorescent signal to a projector unit, and projecting, by the projector unit, the visible fluorescent signal onto the target object.

    Abstract translation: 荧光图像获取和投影方法包括以下步骤:在控制装置的控制下通过多个光源产生不可见荧光,并由检测单元从目标物体获得不可见荧光图像的信号。 该方法还包括以下步骤:从检测单元接收并将目标物体的不可见荧光图像信号处理成可见荧光信号,将可见荧光信号传输到投影仪单元,并由投影仪单元投射可见荧光 信号到目标对象。

    Light emitting diode with metal piles and multi-passivation layers and its manufacturing method
    62.
    发明授权
    Light emitting diode with metal piles and multi-passivation layers and its manufacturing method 有权
    具有金属堆和多层钝化层的发光二极管及其制造方法

    公开(公告)号:US08847267B2

    公开(公告)日:2014-09-30

    申请号:US12672404

    申请日:2008-08-07

    Abstract: The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.

    Abstract translation: 本发明涉及一种具有金属堆和一个或多个钝化层的发光二极管及其制造方法,该方法包括:分别在第一半导体层和第二半导体层上进行台面蚀刻的第一步, 一个底物顺序! 在台面蚀刻的上表面和侧面上形成反射层的第二步骤! 第三步骤,通过具有第二半导体层的反射器层将一个或多个第一电极与第一半导体层和一个或多个第二电极接触; 在反射层和接触电极上形成第一钝化层的第四步骤; 以及第五步骤,通过一个或多个第一电极线将第一电极连接到第一焊盘,使具有金属堆的形状的垂直延伸部的一端与一个或多个第二电极接触,并将 通过一个或多个第二电极线对第二焊盘的垂直延伸。 作为本发明的效果,发光面积的损失减小,电流扩散效率提高。

    Nitride based semiconductor light emitting device
    63.
    发明授权
    Nitride based semiconductor light emitting device 有权
    基于氮化物的半导体发光器件

    公开(公告)号:US08759815B2

    公开(公告)日:2014-06-24

    申请号:US13818572

    申请日:2011-09-01

    CPC classification number: H01L33/12 H01L33/04 H01L33/06 H01L33/14 H01L33/32

    Abstract: The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.

    Abstract translation: 本发明涉及通过增加电子和有助于发光的空穴的复合速率而提高发光效率的氮化物基半导体发光器件,这是通过匹配电子和空穴波函数的空间分布而得到的。 根据本发明的氮化物基半导体发光器件包括n型氮化物层,形成在n型氮化物层上的有源层和形成在有源层上的p型氮化物层。 在这个阶段,应变控制层和至少一个层在有源层中具有比量子阱层更大的能带隙。 应变控制层设置在形成有源层的量子阱层的区域中。 此外,应变控制层的能带隙小于有源层的量子势垒的能带隙。

    NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
    64.
    发明申请
    NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    基于氮化物的半导体发光器件

    公开(公告)号:US20130299775A1

    公开(公告)日:2013-11-14

    申请号:US13818572

    申请日:2011-09-01

    CPC classification number: H01L33/12 H01L33/04 H01L33/06 H01L33/14 H01L33/32

    Abstract: The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.

    Abstract translation: 本发明涉及通过增加电子和有助于发光的空穴的复合速率而提高发光效率的氮化物基半导体发光器件,这是通过匹配电子和空穴波函数的空间分布而得到的。 根据本发明的氮化物基半导体发光器件包括n型氮化物层,形成在n型氮化物层上的有源层和形成在有源层上的p型氮化物层。 在这个阶段,应变控制层和至少一个层在有源层中具有比量子阱层更大的能带隙。 应变控制层设置在形成有源层的量子阱层的区域中。 此外,应变控制层的能带隙小于有源层的量子势垒的能带隙。

    MULTI-LUMINOUS ELEMENT AND METHOD FOR MANUFACTURING SAME
    65.
    发明申请
    MULTI-LUMINOUS ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
    多元件元件及其制造方法

    公开(公告)号:US20120319081A1

    公开(公告)日:2012-12-20

    申请号:US13581399

    申请日:2011-03-15

    CPC classification number: H01L33/08 H01L33/06 H01L33/32

    Abstract: The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same.

    Abstract translation: 多发光元件及其制造方法技术领域本发明涉及多发光元件及其制造方法。 本发明提供了一种多发光元件,包括:设置在基板上的缓冲层; 设置在缓冲层上的第一类型半导体层; 第一有源层,其设置在所述第一类型半导体层上并被图案化以暴露所述第一类型半导体层的一部分; 设置在由所述第一有源层曝光的所述第一类型半导体层上的第二有源层; 以及设置在第一有源层和第二有源层上的第二类型半导体层,第一和第二有源层在水平方向上重复设置,及其制造方法。

    Compressed sensing-based Brillouin Frequency Domain Distributed Optical Fiber Sensor Device

    公开(公告)号:US20250155267A1

    公开(公告)日:2025-05-15

    申请号:US18274048

    申请日:2022-09-23

    Abstract: The present invention relates to a compressed sensing-based Brillouin frequency domain distributed optical fiber sensor device, and includes: a probe light generation unit that generates probe light using light output from a light source unit and transmits the probe light through one end of a sensing optical fiber; a compressed sensing light generation unit that generates compressed sensing light having a complex signal waveform, in which a plurality of different frequency signals are compressed, using the light output from the light source unit; an optical circulator that receives the compressed sensing light through an input terminal, transmits the same to an output terminal connected to the other end of the sensing optical fiber, and outputs, to a detection terminal, light scattered in the sensing optical fiber and incident through the output terminal; a light detection unit that detects Brillouin scattered light received through the detection terminal; a compressed sensing signal generation unit that generates a compressed sensing signal so that the compressed sensing light is generated; and a signal processing unit that controls the compressed sensing signal generation unit and calculates a temperature or strain for each position of the sensing optical fiber from a signal output from the light detection unit.

    Holographic microscope including holographic image sensor

    公开(公告)号:US12276940B2

    公开(公告)日:2025-04-15

    申请号:US17744627

    申请日:2022-05-14

    Abstract: According to an embodiment, a holographic microscope comprises a light source emitting light to an object, a beam splitter reflecting the light emitted from the light source to the object and transmitting object light reflected from the object, a holographic image sensor sensing information, including a holographic image, by receiving the object light and allowing the object light to coherently interfere with reference light, and an image processor obtaining three-dimensional (3D) information about the object based on the information sensed by the holographic image sensor. The holographic image sensor includes a lens focusing the object light to the holographic image sensor, a filter transmitting a predetermined wavelength band of light of the focused object light, a light receiving unit receiving interference light to sense a holographic image, and a reference light source directly emitting the reference light having the predetermined wavelength band to the light receiving unit.

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