摘要:
A photoconductive member comprises a support for a photoconductive member and a light receiving layer overlaying the support comprising a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms, the first layer region (G) and the second layer region (S) being provided in this order from the support side, and the distribution of germanium atoms in the said first layer (G) being not uniform in the layer thickness direction and nitrogen atoms being contained in the light receiving layer. There may be provided on the light receiving layer a layer comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms.
摘要:
A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer consititution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing oxygen atoms together with a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value C(PN).sub.max of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface with said first layer region (G) and, in said second layer region(S), said substance (C) is distributed in greater amount on the side of said substrate.
摘要:
A photoconductive member comprises a support for photoconductive member and a light-receiving layer provided on said support having a layer constitution in which a layer region (G) comprising an amorphous material containing germanium atoms and a layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the support side, said light-receiving layer having a first layer region (1), a third layer region (3) and a second layer region (2), each containing oxygen atoms, with the distribution concentrations in the layer thickness direction of C(1), C(3) and C(2), respectively, in the order mentioned from the support side, provided that when C(3) cannot be solely the maximum, and either one of C(1) and C(2) is 0, the other two are not 0 and not equal, or when C(3) is 0, the other two are not 0.
摘要:
A photoconductive member comprising a support and a light receiving layer provided on said support, having photoconductivity containing silicon atoms as a matrix and at least hydrogen atoms as constituent atom, said light receiving layer having a layer region with depth profile such that the content of hydrogen atoms contained therein is decreased in the direction of layer thickness toward both ends of said layer.
摘要:
A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.
摘要:
An electrophotographic photosensitive member is configured such that the average value Hx_ave of the content of hydrogen atoms in a central portion area of a photoconductive layer in a cylindrically axial direction thereof, the content Hx of the hydrogen atoms at an arbitrary point in the central portion area, the average value Hy_ave of the content of the hydrogen atoms in an end area of the photoconductive layer in the cylindrically axial direction thereof, and the content Hy of the hydrogen atoms at an arbitrary point in the end area satisfy 10≦Hx_ave≦30, Hx
摘要:
An electrophotographic photosensitive member is configured such that the average value Hx_ave of the content of hydrogen atoms in a central portion area of a photoconductive layer in a cylindrically axial direction thereof, the content Hx of the hydrogen atoms at an arbitrary point in the central portion area, the average value Hy_ave of the content of the hydrogen atoms in an end area of the photoconductive layer in the cylindrically axial direction thereof, and the content Hy of the hydrogen atoms at an arbitrary point in the end area satisfy 10≦Hx_ave≦30, Hx
摘要:
The invention is an electrophotographic photosensitive member comprising a substrate, a photoconductive layer, an intermediate layer and a surface layer sequentially formed, wherein the intermediate contains silicon, carbon and hydrogen, a distribution of a hydrogen ratio which is a ratio of the number of hydrogen to the number of silicon, carbon and hydrogen in the intermediate has a maximum region, a largest hydrogen ratio in the intermediate is larger than a hydrogen ratio in the surface, the hydrogen ratio in the surface is 0.30 to 0.45, a distribution of a carbon ratio which is a ratio of the number of carbon to the number of silicon and carbon in the intermediate has a maximum and a minimum region, a carbon maximum region is 0.53 to 0.63, a carbon minimum region is 0.47 or more, and the maximum hydrogen region in the intermediate is partially superimposed on the minimum carbon region.
摘要:
Disclosed is an electrophotographic photoreceptor which comprises a base material and a photoconductive layer. The photoconductive layer is formed on the base material, and comprises a non-single-crystal material mainly composed of silicon. In the photoconductive layer, with regard to a characteristic energy E (eV) which has the relationship with a light absorption coefficient α (cm−1) represented by the following formula (1), the characteristic energy E1 (eV) for an exposure wavelength in larger than the characteristic energy E2 (eV) for a neutralization wavelength. [Formula (1) α=C exp(hω/E) C: a constant hω: a photon energy h: a rationalized Planck's ω: the number of frequency
摘要翻译:公开了一种电子照相感光体,其包含基材和光电导层。 光电导层形成在基材上,并且包括主要由硅组成的非单晶材料。 在光电导层中,对于与由下式(1)表示的光吸收系数α(cm-1)具有关系的特征能量E(eV),曝光波长的特征能量E1(eV) 大于中和波长的特征能量E2(eV)。 [公式(1)α= C exp(hω/ E)C:常数hω:光子能量h:合理的普朗克的ω:频率的数量
摘要:
An electrophotographic photosensitive member is provided minimizing the absorption of image exposure having a short wavelength in a surface layer and keeping good electrophotographic properties including resolving power. The electrophotographic photosensitive member includes a conductive substrate, and a photoconductive layer and a surface region layer sequentially superimposed on the conductive substrate. The surface region layer is composed of a non-single-crystal silicon nitride film containing an Group element in the periodic table and a carbon atom and using at least a silicon atom and a nitrogen atom as base materials. In the surface region layer, the Group 13 element content with respect to the total amount of constituent atoms has distribution having at least two local maximum values in the thickness direction, and an the average concentration of nitrogen atoms is 30 atm % to 70 atm %.