Focused electron and ion beam systems

    公开(公告)号:US20040036032A1

    公开(公告)日:2004-02-26

    申请号:US10232502

    申请日:2002-08-30

    CPC classification number: H01J37/08 H01J27/18 H01J37/077

    Abstract: An electron beam system is based on a plasma generator in a plasma ion source with an accelerator column. The electrons are extracted from a plasma cathode in a plasma ion source, e.g. a multicusp plasma ion source. The beam can be scanned in both the x and y directions, and the system can be operated with multiple beamlets. A compact focused ion or electron beam system has a plasma ion source and an all-electrostatic beam acceleration and focusing column. The ion source is a small chamber with the plasma produced by radio-frequency (RF) induction discharge. The RF antenna is wound outside the chamber and connected to an RF supply. Ions or electrons can be extracted from the source. A multi-beam system has several sources of different species and an electron beam source.

    Electron beam excited plasma system
    62.
    发明授权
    Electron beam excited plasma system 失效
    电子束激发等离子体系统

    公开(公告)号:US5397956A

    公开(公告)日:1995-03-14

    申请号:US4066

    申请日:1993-01-13

    Abstract: An electron beam excited plasma system in which an electron beam is extracted from a discharge plasma and accelerated, the accelerated electrons are applied to a etching gas to convert the etching gas into plasma, and the resulting gas plasma is caused to act on a wafer. The system comprises first gas source for supplying a gas for the generation of the discharge plasma to the region between a cathode and an anode, a first solenoid for forming a magnetic field substantially parallel to the direction of the electron beam such that the electron beam is guided along a center line connecting an axis of the cathode and a central axis of the wafer, an accelerating electrode surrounded by the first solenoid and adapted to accelerate the electron beam when a voltage is applied between the accelerating electrode and the anode, a second solenoid opposed to the wafer and scattering the magnetic field, formed by the first solenoid, outward from the center line, a double third solenoid for drawing in the magnetic field, scattered by the second solenoid, to a periphery of the wafer, a second gas source for supplying the etching gas to be converted into plasma by means of the electron beam to a region around the wafer, and a vacuum pump for evacuating the region around the wafer.

    Abstract translation: 一种电子束激发等离子体系,其中从放电等离子体中提取电子束并加速,将加速的电子施加到蚀刻气体,以将蚀刻气体转换成等离子体,并使得到的气体等离子体作用在晶片上。 该系统包括用于向阴极和阳极之间的区域供应用于产生放电等离子体的气体的第一气体源,用于形成基本上平行于电子束的方向的磁场的第一螺线管,使得电子束为 沿着连接阴极的轴线和晶片的中心轴线的中心线引导,加速电极被第一螺线管包围,并且适于在加速电极和阳极之间施加电压时加速电子束,第二螺线管 与第一螺线管形成的磁场相对,并且将由第二螺线管散射的磁场的中心线向外延伸到第二电磁线圈的第二气体源, 用于将通过电子束转换成等离子体的蚀刻气体供应到晶片周围的区域,以及用于将区域auu排空的真空泵 和晶圆。

    Large-area uniform electron source
    63.
    发明授权
    Large-area uniform electron source 失效
    大面积均匀电子源

    公开(公告)号:US5003178A

    公开(公告)日:1991-03-26

    申请号:US270751

    申请日:1988-11-14

    CPC classification number: H01J37/077 H01J3/025

    Abstract: A large-area electron source which can operate continuously, stably, and indefinitely in a poor vacuum environment. The source includes a glow discharge cathode, appropriately positioned with respect to a target anode, and a fine-mesh grid spaced from the cathode by a distance less than the mean free path length of electrons leaving the cathode, the grid being electrically biased to control the electron beam current over a wide range with only small grid voltage changes. An accelerating voltage applied to the cathode can be varied continuously from as low as a few hundred volts to 30 KeV or greater and the source will continue to operate satisfactorily. Further, the grid is made of a fine mesh wire of sufficiently small dimensions as to not be resolvable in the target plane. A further refinement of the device utilizes scanning coils to achieve additional uniformity of the incident beam at the target plane. The basic apparatus of the invention can be combined with other features, for use in shadow mask lithography, resist sensitivity measurement, lift off processing, and resist curing.

    Abstract translation: 大面积电子源,可在恶劣的真空环境中连续,稳定,无限期地运行。 源极包括相对于目标阳极适当定位的辉光放电阴极和与阴极隔开距离小于离开阴极的电子的平均自由路径长度的细网格栅格,电网被电偏置以控制 电子束电流在宽范围内只有小的电网电压变化。 施加到阴极的加速电压可以从低到几百伏到30KeV或更大连续地变化,并且源将继续令人满意地运行。 此外,网格由足够小尺寸的细网线制成,以致不能在目标平面中解析。 器件的进一步改进利用扫描线圈来实现入射光束在靶平面处的附加均匀性。 本发明的基本装置可以与用于荫罩光刻,抗蚀剂灵敏度测量,剥离处理和抗蚀剂固化的其它特征相组合。

    Nonthermionic hollow anode gas discharge electron beam source
    64.
    发明授权
    Nonthermionic hollow anode gas discharge electron beam source 失效
    非热电中空阳极气体放电电子束源

    公开(公告)号:US4647818A

    公开(公告)日:1987-03-03

    申请号:US600674

    申请日:1984-04-16

    Applicant: Mooyoung Ham

    Inventor: Mooyoung Ham

    CPC classification number: H01J17/44 H01J3/025 H01J33/00 H01J37/077

    Abstract: Apparatus and method for producing a plurienergetic electron beam source. The apparatus includes a housing which functions as an anode, the same having an electron emission window covered by an electron-transparent grid, a cathode body mounted within the housing and electrically isolated therefrom, the spacing between the cathode body and grid being sufficient to permit a gas discharge to be maintained between them having a plasma region substantially thinner than the cathode sheath region. The method involves the simultaneous feeding of gas between a cathode body and an anode grid, applying voltages of about 10 kV to 20 kV and regulating the gas feed rate and the voltage to maintain a discharge condition of the character described above.

    Abstract translation: 用于生产三能电子束源的装置和方法。 该装置包括用作阳极的壳体,其具有由电子透明栅格覆盖的电子发射窗口,阴极体安装在壳体内并与其电隔离,阴极体与栅极之间的间隔足以允许 保持在它们之间的气体放电具有基本上比阴极鞘区域薄的等离子体区域。 该方法包括在阴极体和阳极电网之间同时进料气体,施加约10kV至20kV的电压并调节气体进料速率和电压以维持上述特性的排放条件。

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