公开(公告)号：US20070298523A1

公开(公告)日：2007-12-27

申请号：US11765973

申请日：2007-06-20

申请人： Young Mun ,  Kun Kim ,  Chung Koh ,  Seung Pyi

发明人： Young Mun ,  Kun Kim ,  Chung Koh ,  Seung Pyi

IPC分类号： H01L21/00

CPC分类号： H01L21/324 ,  H01L21/3225

摘要： By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.

摘要翻译： 通过使用两步RTP（快速热处理）工艺，提供晶片，其具有通过控制位于晶片表面区域上的精细氧沉淀物和OiSF（氧化诱导堆叠故障）而固定的理想半导体器件区域。 通过执行所公开的两步快速热处理，可以精确地控制缺陷的分布，并且可以形成理想的器件有源区至距离晶片表面一定距离。 此外，通过使晶体的内部区域即体积区域中的氧析出物和体积堆垛层错能够在深度方向上具有恒定的密度，可以使内部吸气（IG）效率最大化。 为了获得体积区域中的氧沉淀物的恒定浓度分布和体积堆垛层错，将晶片在预定的混合气体气氛中进行前述的两步快速热处理。

公开(公告)号：US20070252239A1

公开(公告)日：2007-11-01

申请号：US11578814

申请日：2005-04-22

申请人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

发明人： Susumu Maeda ,  Takahisa Sugiman ,  Shinya Sadohara ,  Shiro Yoshino ,  Kouzo Nakamura

IPC分类号： H01L29/167 ,  H01L21/322

CPC分类号： H01L21/3225

摘要： A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.

摘要翻译： 提供了能够通过在含氮气氛中在RTA之后任意控制晶片BMD密度的深度方向上的M形分布，从而普遍地控制对制造商对制造商的需求可以不同的接近吸气结构的方法。 提供了通过控制用于热处理的硅晶片的深度方向上的氮浓度分布来形成期望的内部缺陷密度分布的热处理方法，该方法包括热处理用于制造硅晶片的预定硅晶片 在其表面附近具有剥离区域。

公开(公告)号：US20070218570A1

公开(公告)日：2007-09-20

申请号：US11573387

申请日：2005-08-11

申请人： Kouzo Nakamura ,  Susumu Maeda ,  Kouichirou Hayashida ,  Takahisa Sugiman ,  Katsuhiko Sugisawa

发明人： Kouzo Nakamura ,  Susumu Maeda ,  Kouichirou Hayashida ,  Takahisa Sugiman ,  Katsuhiko Sugisawa

IPC分类号： H01L21/66

CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/3225 ,  Y10T117/1004 ,  Y10T117/1056

摘要： An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a silicon crystal doped with nitrogen at the time of crystal growth can be derived from the nitrogen concentration and the cooling rate around 1100° C. during crystal growth, and the oxygen precipitate density to be obtained after a heat treatment can be predicted from the derived relational equation relating the oxygen precipitate density to the radius, the oxygen concentration, and the wafer heat treatment process. Also, an epitaxially grown wafer and a high-temperature annealed wafer whose oxygen precipitate density has been controlled to an appropriate density are obtained, using conditions predicted by the method.

摘要翻译： 通过进行外延生长或高温热处理，获得具有优异吸气能力的外延晶片和高温热处理晶片。 引起晶体生长时掺杂氮的硅晶体中的密度与引入氧沉淀的半径的关系式可以从晶体生长期间的氮浓度和1100℃附近的冷却速率得出，并且氧气 可以从氧沉淀密度与半径，氧浓度和晶片热处理过程相关的导出关系式来预测热处理后得到的沉淀物密度。 此外，使用通过该方法预测的条件，获得外延生长的晶片和氧沉淀物密度已被控制到适当密度的高温退火晶片。

公开(公告)号：US20070186845A1

公开(公告)日：2007-08-16

申请号：US11654947

申请日：2007-01-17

申请人： Shigeru Umeno

发明人： Shigeru Umeno

IPC分类号： C30B15/00 ,  C30B21/04 ,  H01L21/332 ,  H01L21/00

CPC分类号： H01L29/7395 ,  C30B15/04 ,  C30B15/305 ,  C30B29/06 ,  C30B31/20 ,  C30B33/04 ,  H01L21/3221 ,  H01L21/3225 ,  H01L29/0657 ,  H01L29/66325 ,  Y10T428/21

摘要： A single crystal silicon wafer for use in the production of insulated gate bipolar transistors is made of single crystal silicon grown by the Czochralski method and has a gate oxide with a film thickness of from 50 to 150 nm. The wafer has an interstitial oxygen concentration of at most 7.0×1017 atoms/cm3, a resistivity variation within the plane of the wafer of at most 5% and, letting tox (cm) be the gate oxide film thickness and S (cm2) be the electrode surface area when determining the TZDB pass ratio, a density d (cm−3) of crystal originated particles (COP) having a size at least twice the gate oxide film thickness which satisfies the formula d≦−ln(0.9)/(S·tox/2). The wafers have an increased production yield and a small resistivity variation.

摘要翻译： 用于制造绝缘栅双极晶体管的单晶硅晶片由采用切克劳斯基法生长的单晶硅制成，并具有膜厚度为50至150nm的栅极氧化物。 晶片具有至多7.0×10 17原子/ cm 3的间隙氧浓度，晶片平面内的电阻率变化最大为5％，并使t 在确定TZDB通过比时，作为栅极氧化膜厚度，S（cm 2）是电极表面积，密度d（cm < -3％的晶体起始颗粒（COP），其尺寸至少为栅极氧化膜厚度的两倍，其满足公式d <= - ln（0.9）/（St ox / 2 ）。 晶片具有增加的产量和小的电阻率变化。

公开(公告)号：US07242075B2

公开(公告)日：2007-07-10

申请号：US10699438

申请日：2003-10-31

申请人： Young Hee Mun ,  Kun Kim ,  Chung Geun Koh ,  Seung Ho Pyi

发明人： Young Hee Mun ,  Kun Kim ,  Chung Geun Koh ,  Seung Ho Pyi

IPC分类号： H01L29/32

CPC分类号： H01L21/324 ,  H01L21/3225

摘要： By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.

摘要翻译： 通过使用两步RTP（快速热处理）工艺，提供晶片，其具有通过控制位于晶片表面区域上的精细氧沉淀物和OiSF（氧化诱导堆叠故障）而固定的理想半导体器件区域。 通过执行所公开的两步快速热处理，可以精确地控制缺陷的分布，并且可以形成理想的器件有源区至距离晶片表面一定距离。 此外，通过使晶体的内部区域即体积区域中的氧析出物和体积堆垛层错能够在深度方向上具有恒定的密度，可以使内部吸气（IG）效率最大化。 为了获得体积区域中的氧沉淀物的恒定浓度分布和体积堆垛层错，将晶片在预定的混合气体气氛中进行前述的两步快速热处理。

公开(公告)号：US07226505B2

公开(公告)日：2007-06-05

申请号：US10500268

申请日：2002-12-25

申请人： Masahiko Ando ,  Masaru Yuyama ,  Shiro Yoshino

发明人： Masahiko Ando ,  Masaru Yuyama ,  Shiro Yoshino

IPC分类号： C30B15/20

CPC分类号： H01L21/324 ,  H01L21/3225

摘要： A method for eliminating defects in single crystal silicon, which comprises subjecting single crystal silicon prepared by the CZ method to an oxidation treatment and then to an ultra high temperature heat treatment at a temperature of at least 1300° C., or comprises subjecting single crystal silicon which is prepared by the CZ method and is not subjected to an oxidation treatment (a bare wafer) to an ultra high temperature heat treatment in an oxygen atmosphere and at a temperature of higher than 1200° C. and lower than 1310° C. The method allows the elimination of void defects present in single crystal silicon with reliability.

摘要翻译： 一种消除单晶硅缺陷的方法，其包括将通过CZ法制备的单晶硅进行氧化处理，然后在至少1300℃的温度下进行超高温热处理，或包括使单晶 硅，其通过CZ法制备，并且在氧气氛中和在高于1200℃且低于1310℃的温度下不经过氧化处理（裸晶片）至超高温热处理。 该方法可以可靠地消除存在于单晶硅中的空隙缺陷。

公开(公告)号：US07160385B2

公开(公告)日：2007-01-09

申请号：US10368359

申请日：2003-02-20

申请人： Yasuo Koike

发明人： Yasuo Koike

IPC分类号： C30B1/05

CPC分类号： H01L21/3225

摘要： A silicon wafer and a method for manufacturing the same are provided, wherein the silicon wafer has no crystal defects in the vicinity of the surface and provides excellent gettering efficiency in the process of manufacturing devices without IG treatment. The oxygen concentration and the carbon concentration are controlled respectively within a range of 11×1017–17×1017 atoms/cm3 (OLD ASTM) and within a range of 1×1016–15×1016 atoms/cm3 (NEW ASTM). A denuded zone having no crystal defects due to the existence of oxygen is formed on the surface and in the vicinity thereof, and oxygen precipitates are formed at a density of 1×104–5×106 counts/cm2, when a heat treatment is carried out at a temperature of 500–1000° C. for 1 to 24 hours. In the method for manufacturing the silicon wafer, moreover, the silicon wafer having the oxygen and carbon concentrations as controlled above is heat-treated at a temperature of 1100° C.–1380° C. for 1 to 10 hours. The control of the oxygen and carbon concentrations in the growth of a single crystal with CZ method allows a desired density of oxygen precipitates to be attained in the process of manufacturing devices and thereby sufficient gettering efficiency to be obtained.

摘要翻译： 提供硅晶片及其制造方法，其中，硅晶片在表面附近没有晶体缺陷，并且在不进行IG处理的器件的制造工艺中提供优异的吸杂效率。 氧浓度和碳浓度分别控制在11×10 17 -17×10 17原子/ cm 3（OLD ASTM）的范围内，并且在 1×10 16 -15×16 16原子/ cm 3（新ASTM）的范围。 在表面及其附近形成由于存在氧而没有晶体缺陷的剥离区，并且以1×4×5×10 -6的密度形成氧析出物， 当在500-1000℃的温度下进行热处理1至24小时时，SUP>计数/ cm 2。 此外，在制造硅晶片的方法中，将具有上述控制的氧和碳浓度的硅晶片在1100℃-1380℃的温度下进行1〜10小时的热处理。 利用CZ方法控制单晶生长中的氧和碳浓度允许在制造装置的过程中获得所需的氧沉淀物密度，从而获得足够的吸气效率。

公开(公告)号：US07157354B2

公开(公告)日：2007-01-02

申请号：US10501080

申请日：2003-01-09

申请人： Hiroshi Yoshida

发明人： Hiroshi Yoshida

IPC分类号： H01L21/322 ,  H01L21/4763 ,  B32B15/00 ,  B32B17/06

CPC分类号： H01L21/3225 ,  C30B29/06 ,  C30B33/00

摘要： Disclosed is a method for gettering a transition metal impurity diffused in a silicon crystal at ultra high-speeds to form deep impurity levels therein. The method comprises codoping two kinds of impurities: oxygen and carbon, into silicon, and thermally annealing the impurity-doped silicon to precipitate an impurity complex of an atom of the transition metal impurity, the C and the O, in the silicon crystal, so that the transition metal impurity is confined in the silicon crystal to prevent the ultra high-speed diffusion of the transition metal impurity and electrically deactivate deep impurity levels to be induced by the transition metal impurity. The present invention makes it possible to produce a silicon semiconductor device free of adverse affects from a transition metal impurity, such as Co, Ni or Cu, mixed in a silicon crystal during a process of forming the silicon single crystal, or such as Cu mixed in a silicon wafer during a process of printing a Cu wiring, which has not been able to be completely eliminated from the silicon crystal through conventional techniques.

摘要翻译： 公开了一种用于在超高速下吸收在硅晶体中扩散的过渡金属杂质以在其中形成深度杂质水平的方法。 该方法包括将两种杂质：氧和碳共同掺入硅中，并对杂质掺杂的硅进行热退火，以沉淀硅晶体中过渡金属杂质C和O的原子的杂质络合物，因此 过渡金属杂质被限制在硅晶体中，以防止过渡金属杂质的超高速扩散，并且使由过渡金属杂质引起的深杂质水平失电。 本发明使得可以制造在形成硅单晶的过程中混合在硅晶体中的诸如Co，Ni或Cu的过渡金属杂质或诸如Cu混合的过渡金属杂质的不受影响的硅半导体器件 在印刷通过常规技术不能从硅晶体中完全消除的Cu布线的工艺期间的硅晶片中。

公开(公告)号：US20060289091A1

公开(公告)日：2006-12-28

申请号：US11447223

申请日：2006-06-05

申请人： Anthony Buonassisi ,  Matthias Heuer ,  Andrei Istratov ,  Matthew Pickett ,  Mathew Marcus ,  Eicke Weber

发明人： Anthony Buonassisi ,  Matthias Heuer ,  Andrei Istratov ,  Matthew Pickett ,  Mathew Marcus ,  Eicke Weber

IPC分类号： C22C19/03

CPC分类号： H01L31/186 ,  H01L21/3225 ,  H01L31/028 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.

摘要翻译： 本发明涉及通过金属合金簇对半导体中杂质的内部吸杂。 特别地，在硅中形成金属间簇，这种簇包含两个或多个过渡金属物质。 这样的簇具有低于主体材料的熔融温度，并且显示出在吸收硅中的杂质并将其收集到隔离的，较不有害的位置中是特别有效的。 还描述了一些金属合金簇的新型组合物。

公开(公告)号：US20060278157A1

公开(公告)日：2006-12-14

申请号：US11477705

申请日：2006-06-29

申请人： Christoph Seuring ,  Robert Hoelzl ,  Reinhold Wahlich ,  Wilfried Von Ammon

发明人： Christoph Seuring ,  Robert Hoelzl ,  Reinhold Wahlich ,  Wilfried Von Ammon

IPC分类号： H01L21/322

CPC分类号： H01L21/3225 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon water by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ Oi ]