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公开(公告)号：US20060289091A1
公开(公告)日：2006-12-28
申请号：US11447223
申请日：2006-06-05
申请人： Anthony Buonassisi , Matthias Heuer , Andrei Istratov , Matthew Pickett , Mathew Marcus , Eicke Weber
发明人： Anthony Buonassisi , Matthias Heuer , Andrei Istratov , Matthew Pickett , Mathew Marcus , Eicke Weber
IPC分类号： C22C19/03
CPC分类号： H01L31/186 , H01L21/3225 , H01L31/028 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.
摘要翻译： 本发明涉及通过金属合金簇对半导体中杂质的内部吸杂。 特别地，在硅中形成金属间簇，这种簇包含两个或多个过渡金属物质。 这样的簇具有低于主体材料的熔融温度，并且显示出在吸收硅中的杂质并将其收集到隔离的，较不有害的位置中是特别有效的。 还描述了一些金属合金簇的新型组合物。
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公开(公告)号：US20120113706A1
公开(公告)日：2012-05-10
申请号：US13383572
申请日：2009-09-04
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor (100, 100′, 100″) based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode (100′) and an ON-switched diode (100″) are also provided, A method of operating the memristor is further provided.
摘要翻译： 基于混合金属化合物的忆阻器（100,100'，100“）包括：第一电极（115）; 第二电极（120）; 与至少一个完全氧化相的层（110,1 110a，110b）物理接触的混合金属 - 价相的层（105）。 混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，其响应于施加的电场（125）而漂移进入和离开完全氧化相。 第一和第二电极中的一个与混合金属价态层的层或完全氧化相的层（110a）电接触，另一个与层（或其他层（110b））电接触 ））的完全氧化相。 忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层来制备，另一方面。 还提供了可逆二极管（100'）和导通开关二极管（100“）。还提供了一种操作忆阻器的方法。
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公开(公告)号：US20120146184A1
公开(公告)日：2012-06-14
申请号：US13383981
申请日：2009-08-28
申请人： Matthew Pickett , Julien Borghetti , Jianhua Yang
发明人： Matthew Pickett , Julien Borghetti , Jianhua Yang
CPC分类号： G11C11/24 , H01G7/06 , H01L27/101 , H01L28/40 , H01L29/167 , H01L29/93
摘要： A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided.
摘要翻译： 电容器装置包括插入在第一电极和第二电极之间的存储电容矩阵。 电容矩阵包括具有第一衰减时间常数的深层掺杂剂和具有第二衰减时间常数的浅层掺杂剂。 第二衰减时间常数明显短于第一衰减时间常数。 存储器件器件的电容取决于施加在存储电容矩阵上的初始电压，并且存储器件器件的时间相关的电容变化取决于第一衰减时间常数。 还提供了一种用于形成电容器件的方法。
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公开(公告)号：US08891284B2
公开(公告)日：2014-11-18
申请号：US13383572
申请日：2009-09-04
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00 , G11C13/00 , H01L29/861
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor based on mixed-metal-valence compounds comprises: a first electrode; a second electrode; a layer of a mixed-metal-valence phase in physical contact with at least one layer of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field. One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer of a fully oxidized phase and the other is in electrical contact with the layer (or other layer) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode and an ON-switched diode are also provided. A method of operating the memristor is further provided.
摘要翻译： 基于混合金属价化合物的忆阻器包括：第一电极; 第二电极; 与至少一层完全氧化相物理接触的混合金属价态相的一层。 混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，其响应于施加的电场漂移进入和离开完全氧化相。 第一和第二电极之一与混合金属化合物相的层或完全氧化相的层电接触，另一个与完全氧化的层（或其它层）电接触 相。 忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层来制备，另一方面。 还提供了可逆二极管和ON开关二极管。 还提供了一种操作忆阻器的方法。
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公开(公告)号：US20130112934A1
公开(公告)日：2013-05-09
申请号：US13809498
申请日：2010-07-21
申请人： Jianhua Yang , Matthew Pickett , Gilberto Ribeiro
发明人： Jianhua Yang , Matthew Pickett , Gilberto Ribeiro
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/146
摘要： A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region under an electric field to change a resistive state of the device. The switching material further carries immobile ionic dopants for inhibiting clustering of the mobile ionic dopants caused by switching cycles of the device. The immobile ionic dopants have a charge opposite in polarity to the charge of the mobile ionic dopants, and are less mobile under the electric field than the mobile ion dopants.
摘要翻译： 纳米级开关器件具有设置在纳米级宽度的两个电极之间的有源区域。 有源区域包含交换材料，其携带能够在电场下在有源区域上传输的移动离子掺杂剂，以改变器件的电阻状态。 开关材料还携带用于抑制由器件的开关周期引起的移动离子掺杂剂聚集的固定的离子掺杂剂。 不可移动的离子掺杂剂具有与移动离子掺杂剂的电荷极性相反的电荷，并且在电场下的移动性低于移动离子掺杂剂。
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公开(公告)号：US09172035B2
公开(公告)日：2015-10-27
申请号：US14357783
申请日：2011-12-12
申请人： Matthew Pickett , Janice Nickel
发明人： Matthew Pickett , Janice Nickel
CPC分类号： H01L45/1233 , H01L27/2463 , H01L28/24 , H01L45/04 , H01L45/146 , H01L45/1608 , H01L45/1633 , H01L45/1683
摘要： Memristors and their fabrication are provided. A first dielectric layer is formed over one or more conductive pathways. Vias are formed in the dielectric layer and filled with conductive material. A second dielectric layer is formed there over, and vias are formed aligned with and extending to the filled vias. A reactant fluid is introduced into the vias such that a reacted portion of the conductive material is defined within the filled vias. The vias in the second dielectric layer are then filled with conductive material such that memristors are defined. Conductive pathways are then formed over and in contact with the memristors such that each is individually addressable.
摘要翻译： 提供忆阻器及其制造。 在一个或多个导电路径上形成第一电介质层。 在电介质层中形成通孔，并填充有导电材料。 在其上形成第二电介质层，并且通孔形成为与填充的通孔对准并延伸到填充的通孔。 将反应物流体引入到通孔中，使得在填充的通孔内限定导电材料的反应部分。 然后用导电材料填充第二电介质层中的通孔，从而限定了忆阻器。 导电路径然后形成在忆阻器之上并与忆阻器接触，使得每个可单独寻址。
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公开(公告)号：US08912520B2
公开(公告)日：2014-12-16
申请号：US13809498
申请日：2010-07-21
申请人： Jianhua Yang , Matthew Pickett , Gilberto Ribeiro
发明人： Jianhua Yang , Matthew Pickett , Gilberto Ribeiro
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/146
摘要： A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region under an electric field to change a resistive state of the device. The switching material further carries immobile ionic dopants for inhibiting clustering of the mobile ionic dopants caused by switching cycles of the device. The immobile ionic dopants have a charge opposite in polarity to the charge of the mobile ionic dopants, and are less mobile under the electric field than the mobile ion dopants.
摘要翻译： 纳米级开关器件具有设置在纳米级宽度的两个电极之间的有源区域。 有源区域包含交换材料，其携带能够在电场下在有源区域上传输的移动离子掺杂剂，以改变器件的电阻状态。 开关材料还携带用于抑制由器件的开关周期引起的移动离子掺杂剂聚集的固定的离子掺杂剂。 不可移动的离子掺杂剂具有与移动离子掺杂剂的电荷极性相反的电荷，并且在电场下的移动性低于移动离子掺杂剂。
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公开(公告)号：US20140312292A1
公开(公告)日：2014-10-23
申请号：US14357783
申请日：2011-12-12
申请人： Matthew Pickett , Janice Nickel
发明人： Matthew Pickett , Janice Nickel
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L27/2463 , H01L28/24 , H01L45/04 , H01L45/146 , H01L45/1608 , H01L45/1633 , H01L45/1683
摘要： Memristors and their fabrication are provided. A first dielectric layer is formed over one or more conductive pathways. Vias are formed in the dielectric layer and filled with conductive material. A second dielectric layer is formed there over, and vias are formed aligned with and extending to the filled vias. A reactant fluid is introduced into the vias such that a reacted portion of the conductive material is defined within the filled vias. The vias in the second dielectric layer are then filled with conductive material such that memristors are defined. Conductive pathways are then formed over and in contact with the memristors such that each is individually addressable.
摘要翻译： 提供忆阻器及其制造。 在一个或多个导电路径上形成第一电介质层。 在电介质层中形成通孔，并填充有导电材料。 在其上形成第二电介质层，并且通孔形成为与填充的通孔对准并延伸到填充的通孔。 将反应物流体引入到通孔中，使得在填充的通孔内限定导电材料的反应部分。 然后用导电材料填充第二电介质层中的通孔，从而限定了忆阻器。 导电路径然后形成在忆阻器之上并与忆阻器接触，使得每个可单独寻址。
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