SOLID STATE IMAGING DEVICE
    63.
    发明申请

    公开(公告)号:US20180226441A1

    公开(公告)日:2018-08-09

    申请号:US15944258

    申请日:2018-04-03

    Inventor: Toru Kondo

    Abstract: A solid-state imaging device includes a first semiconductor substrate including a pixel array unit, a second semiconductor substrate stacked on a surface of a side opposite to a side on which light is incident in the first semiconductor substrate and on which a pixel control circuit and a reading circuit are arranged, and a plurality of connection electrodes configured to electrically connect pixel control signal lines between the first semiconductor substrate and the second semiconductor substrate, wherein the connection electrodes electrically connect pixel control signal lines within a pixel immediate region which overlaps a region where the pixel array unit is arranged in the first semiconductor substrate, and the pixel control circuit is arranged along an edge of the pixels in either one of a row direction and a column direction arranged in the pixel array unit in the pixel immediate region.

    IMAGE SENSOR
    64.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20180220093A1

    公开(公告)日:2018-08-02

    申请号:US15856671

    申请日:2017-12-28

    Abstract: According to one exemplary embodiment, an image sensor includes a first chip A and a second chip B configured to transmit and receive signals to and from the first chip through a micro-bump, the first chip being stacked on top of the second chip, wherein on the first chip, pixel circuits 31-3n are arranged in a lattice structure, each of the pixel circuits including a photoelectric conversion element 41, a transfer transistor 42, a reset transistor 43, and an amplification transistor 44, and on the second chip, at least an input stage circuit COMP of an analog-to-digital converter circuit configured to convert a dark level signal and an imaging signal output from the pixel circuits 31-3n into a digital value is formed, and the number of input stage circuits COMP is at least two times the number of lines of the pixel circuits.

    IMAGING APPARATUS AND IMAGING SYSTEM
    69.
    发明申请

    公开(公告)号:US20180139400A1

    公开(公告)日:2018-05-17

    申请号:US15799251

    申请日:2017-10-31

    Abstract: Provided is an imaging apparatus including a pixel array in which a plurality of pixels are arranged in a matrix, each of the pixels comprising a photoelectric conversion portion. The pixel array includes a first pixel configured to output an imaging signal in accordance with an incident light and a second pixel configured to output a correction signal used for correcting the imaging signal. The second pixel outputs the correction signal after performing a first reset performed in a state where a first bias voltage is applied to the photoelectric conversion portion of the second pixel and a second reset performed in a state where a second bias voltage that is different from the first bias voltage is applied to the photoelectric conversion portion.

    Layout and operation of pixels for image sensors

    公开(公告)号:US20180130838A1

    公开(公告)日:2018-05-10

    申请号:US15727640

    申请日:2017-10-09

    Abstract: Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor having at least two pixel electrodes per color region, and having at least two modes is disclosed. The example image sensor includes a first, unbinned, mode; and a second, binned, mode. In the first, unbinned mode, the at least two pixel electrodes per color region are to be reset to substantially similar levels. In the second, binned mode, a first pixel electrode of the at the least two pixel electrodes is to be reset to a high voltage that results in efficient collection of photocharge, and a second pixel electrode of the at the least two pixel electrodes is to be reset to a low voltage that results in less efficient collection of photocharge. Other methods and apparatuses are disclosed.

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