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公开(公告)号:US10063767B2
公开(公告)日:2018-08-28
申请号:US15625561
申请日:2017-06-16
Applicant: Olympus Corporation
Inventor: Yoshinao Shimada
CPC classification number: H04N5/23212 , H01L27/14605 , H01L27/14621 , H01L27/14623 , H01L27/14645 , H04N5/232122 , H04N5/23258 , H04N5/23287 , H04N5/2353 , H04N5/3532 , H04N5/3696 , H04N5/36961 , H04N5/378 , H04N9/045 , H04N9/04557
Abstract: An image pickup device includes a first pixel region including image pixels and phase difference pixels and a second pixel region including image pixels and including no pixel configured to output a valid phase difference pixel signal, wherein a part of the plurality of phase difference pixels in the first pixel region is arranged at a regular position at which a G filter is formed in a Bayer array and another part is arranged at an irregular position at which a filter that is other than the G filter is formed, and a basic arrangement pattern of filters in the second pixel region is equal to a basic arrangement pattern of filters in the first pixel region.
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62.
公开(公告)号:US20180226444A1
公开(公告)日:2018-08-09
申请号:US15882591
申请日:2018-01-29
Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor: Hideaki TOGASHI , Naoyuki SATO
IPC: H01L27/146 , H04N5/378 , H04N5/361
CPC classification number: H01L27/14621 , H01L27/14605 , H01L27/14609 , H01L27/14623 , H01L27/14636 , H01L27/1464 , H01L27/14647 , H04N5/361 , H04N5/378
Abstract: A solid-state imaging device according to the present disclosure includes: a semiconductor base; a photoelectric conversion element provided in the semiconductor base; a photoelectric conversion film arranged on a light receiving surface side of the semiconductor base; a contact section to which a signal charge generated in the photoelectric conversion film is read, the contact section being provided in the semiconductor base; a first film member covering the photoelectric conversion element; and a second film member provided on the contact section.
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公开(公告)号:US20180226441A1
公开(公告)日:2018-08-09
申请号:US15944258
申请日:2018-04-03
Applicant: OLYMPUS CORPORATION
Inventor: Toru Kondo
IPC: H01L27/146 , H04N5/378 , H04N5/374
CPC classification number: H01L27/14612 , H01L27/146 , H01L27/14605 , H01L27/14634 , H01L27/14636 , H01L27/14643 , H04N5/374 , H04N5/378 , H04N5/379
Abstract: A solid-state imaging device includes a first semiconductor substrate including a pixel array unit, a second semiconductor substrate stacked on a surface of a side opposite to a side on which light is incident in the first semiconductor substrate and on which a pixel control circuit and a reading circuit are arranged, and a plurality of connection electrodes configured to electrically connect pixel control signal lines between the first semiconductor substrate and the second semiconductor substrate, wherein the connection electrodes electrically connect pixel control signal lines within a pixel immediate region which overlaps a region where the pixel array unit is arranged in the first semiconductor substrate, and the pixel control circuit is arranged along an edge of the pixels in either one of a row direction and a column direction arranged in the pixel array unit in the pixel immediate region.
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公开(公告)号:US20180220093A1
公开(公告)日:2018-08-02
申请号:US15856671
申请日:2017-12-28
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor: Fumihide Murao , Koji Shida
IPC: H04N5/374 , H01L27/146 , H04N5/361 , H04N5/378
CPC classification number: H04N5/374 , H01L27/14605 , H01L27/14607 , H01L27/14612 , H01L27/14634 , H01L27/14641 , H01L27/14643 , H04N5/361 , H04N5/378
Abstract: According to one exemplary embodiment, an image sensor includes a first chip A and a second chip B configured to transmit and receive signals to and from the first chip through a micro-bump, the first chip being stacked on top of the second chip, wherein on the first chip, pixel circuits 31-3n are arranged in a lattice structure, each of the pixel circuits including a photoelectric conversion element 41, a transfer transistor 42, a reset transistor 43, and an amplification transistor 44, and on the second chip, at least an input stage circuit COMP of an analog-to-digital converter circuit configured to convert a dark level signal and an imaging signal output from the pixel circuits 31-3n into a digital value is formed, and the number of input stage circuits COMP is at least two times the number of lines of the pixel circuits.
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公开(公告)号:US10038028B2
公开(公告)日:2018-07-31
申请号:US15479793
申请日:2017-04-05
Applicant: SK hynix Inc.
Inventor: Do-Hwan Kim , Seung-Hoon Sa
IPC: H01L27/00 , H01L27/146
CPC classification number: H01L27/14643 , H01L27/14605 , H01L27/1461 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14685 , H01L27/14689
Abstract: An image sensor may include a pixel array where a plurality of unit pixels are arranged in a two dimensional matrix, wherein each of the unit pixels includes: a substrate including a photoelectric conversion element; one or more depletion inducing layers formed in the photoelectric conversion element; an inter-layer dielectric layer formed over the substrate; and one or more floating electrodes formed in the inter-layer dielectric layer to overlap each of the depletion inducing layers.
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公开(公告)号:US10008528B2
公开(公告)日:2018-06-26
申请号:US15272738
申请日:2016-09-22
Applicant: CANON KABUSHIKI KAISHA
Inventor: Hiroshi Ikakura , Nobutaka Ukigaya , Jun Iba , Taro Kato , Takehito Okabe
IPC: H01L31/0232 , H01L27/146
CPC classification number: H01L27/14625 , H01L27/14605 , H01L27/14607 , H01L27/14609 , H01L27/14643 , H01L27/14685
Abstract: A solid-state image sensor includes a substrate including a photoelectric conversion portion, an insulating layer having an opening, and a member arranged inside the opening. Letting d be a depth of the opening, the opening has, at an upper end of the opening, a shape having a width in a first direction parallel to the surface of the substrate, and a width in a second direction parallel to the surface of the substrate and orthogonal to the first direction. The widths in the first and second directions are different from each other. The shape is capable of drawing, at each point on a circumference of the opening at the upper end, a circle of 0.6d in diameter which contacts the circumference at the point and does not include a portion outside the opening.
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67.
公开(公告)号:US20180175087A1
公开(公告)日:2018-06-21
申请号:US15894542
申请日:2018-02-12
Applicant: Sony Semiconductor Solutions Corporation
Inventor: Hiroaki Ishiwata
IPC: H01L27/146 , H04N9/04 , H04N5/3745 , H04N5/369 , H04N5/357 , H04N5/347 , H04N5/225
CPC classification number: H01L27/14612 , H01L27/14603 , H01L27/14605 , H01L27/14621 , H01L27/14627 , H01L27/14641 , H01L27/14645 , H01L27/14685 , H04N5/2253 , H04N5/2254 , H04N5/347 , H04N5/357 , H04N5/3696 , H04N5/3745 , H04N5/37457 , H04N9/045
Abstract: A solid-state imaging device including an imaging area where a plurality of unit pixels are disposed to capture a color image, wherein each of the unit pixels includes: a plurality of photoelectric conversion portions; a plurality of transfer gates, each of which is disposed in each of the photoelectric conversion portions to transfer signal charges from the photoelectric conversion portion; and a floating diffusion to which the signal charges are transferred from the plurality of the photoelectric conversion portions by the plurality of the transfer gates, wherein the plurality of the photoelectric conversion portions receive light of the same color to generate the signal charges, and wherein the signal charges transferred from the plurality of the photoelectric conversion portions to the floating diffusion are added to be output as an electrical signal.
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公开(公告)号:US09998689B2
公开(公告)日:2018-06-12
申请号:US14557158
申请日:2014-12-01
Applicant: STMicroelectronics (Grenoble 2) SAS , STMicroelectronics (Rousset) SAS , STMicroelectronics SA
Inventor: David Coulon , Benoit Deschamps , Frederic Barbier
IPC: H01L21/00 , H04N5/345 , H01L27/146 , H04N5/378
CPC classification number: H04N5/345 , H01L27/14605 , H01L27/14647 , H01L27/14689 , H04N5/378
Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.
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公开(公告)号:US20180139400A1
公开(公告)日:2018-05-17
申请号:US15799251
申请日:2017-10-31
Applicant: CANON KABUSHIKI KAISHA
Inventor: Tasuku Kaneda , Kei Ochiai , Akira Ohtani
CPC classification number: H04N5/3597 , H01L27/14605 , H01L27/14623 , H01L27/1463 , H04N5/378
Abstract: Provided is an imaging apparatus including a pixel array in which a plurality of pixels are arranged in a matrix, each of the pixels comprising a photoelectric conversion portion. The pixel array includes a first pixel configured to output an imaging signal in accordance with an incident light and a second pixel configured to output a correction signal used for correcting the imaging signal. The second pixel outputs the correction signal after performing a first reset performed in a state where a first bias voltage is applied to the photoelectric conversion portion of the second pixel and a second reset performed in a state where a second bias voltage that is different from the first bias voltage is applied to the photoelectric conversion portion.
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公开(公告)号:US20180130838A1
公开(公告)日:2018-05-10
申请号:US15727640
申请日:2017-10-09
Applicant: INVISAGE TECHNOLOGIES, INC.
Inventor: Hui Tian , Igor Constantin Ivanov , Edward Hartley Sargent
IPC: H01L27/146
CPC classification number: H01L27/14605 , H01L27/14621 , H01L27/14641 , H01L27/14647 , H01L27/14652 , H01L2224/48091 , H04N9/045 , H01L2924/00014
Abstract: Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor having at least two pixel electrodes per color region, and having at least two modes is disclosed. The example image sensor includes a first, unbinned, mode; and a second, binned, mode. In the first, unbinned mode, the at least two pixel electrodes per color region are to be reset to substantially similar levels. In the second, binned mode, a first pixel electrode of the at the least two pixel electrodes is to be reset to a high voltage that results in efficient collection of photocharge, and a second pixel electrode of the at the least two pixel electrodes is to be reset to a low voltage that results in less efficient collection of photocharge. Other methods and apparatuses are disclosed.
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