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公开(公告)号：US10516072B2
公开(公告)日：2019-12-24
申请号：US16008070
申请日：2018-06-14
IPC分类号： H01L29/06 , H01L31/101 , H01L27/146 , H01L31/032 , H01L31/109 , H01L31/0336 , H01L31/0352 , H01L31/0224 , H01L31/0384 , H01L31/09
摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.
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2.发明授权公开(公告)号：US10263041B2
公开(公告)日：2019-04-16
申请号：US15987951
申请日：2018-05-24
发明人： Edward Hartley Sargent , Jason Paul Clifford , Gerasimos Konstantatos , Ian Howard , Ethan J.D. Klem , Larissa Levina
IPC分类号： G11C11/00 , H01L27/30 , H01L31/0392 , H01L31/0216 , H01L27/146 , H01L31/0224 , H01L31/0352 , B82Y10/00 , B82Y30/00 , H01L21/02 , H01L51/42 , B82Y20/00 , H01L51/05 , B82Y40/00 , H01L31/0256 , H01L51/00
摘要： Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.
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3.发明申请公开(公告)号：US20190067377A1
公开(公告)日：2019-02-28
申请号：US15987951
申请日：2018-05-24
发明人： Edward Hartley Sargent , Jason Paul Clifford , Gerasimos Konstantatos , Ian Howard , Ethan J.D. Klem , Larissa Levina
IPC分类号： H01L27/30 , H01L31/0392 , H01L51/05 , H01L27/146 , H01L31/0224 , H01L31/0352
摘要： Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.
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公开(公告)号：US20180076405A1
公开(公告)日：2018-03-15
申请号：US15675337
申请日：2017-08-11
IPC分类号： H01L51/42 , H01L31/0384 , B82Y20/00 , B82Y30/00 , H01L31/032 , H01L51/44 , H01L31/07 , H01L31/0352 , H01L51/00
CPC分类号： H01L51/4213 , B82Y20/00 , B82Y30/00 , H01L31/0322 , H01L31/0324 , H01L31/0352 , H01L31/0384 , H01L31/07 , H01L51/0046 , H01L51/0084 , H01L51/441 , Y02E10/541 , Y02P70/521
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
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公开(公告)号：US09898117B2
公开(公告)日：2018-02-20
申请号：US15225413
申请日：2016-08-01
CPC分类号： G06F3/041 , G06F3/005 , G06F3/017 , G06K9/00355 , G06K9/2018 , G06K9/209 , G09G2360/144
摘要： Various embodiments comprise apparatuses and methods including a light sensor. The light sensor includes a first electrode, a second electrode, a third electrode, and a light-absorbing semiconductor in electrical communication with each of the first electrode, the second electrode, and the third electrode. A light-obscuring material to substantially attenuate an incidence of light onto a portion of the light-absorbing semiconductor is disposed between the second electrode and the third electrode. An electrical bias is to be applied between the second electrode, and the first and the third electrodes and a current flowing through the second electrode is related to the light incident on the light sensor. Additional methods and apparatuses are described.
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6.发明授权公开(公告)号：US09806131B2
公开(公告)日：2017-10-31
申请号：US15431239
申请日：2017-02-13
发明人： Edward Hartley Sargent , Jason Paul Clifford , Gerasimos Konstantatos , Ian Howard , Ethan J. D. Klem , Larissa Levina
IPC分类号： G11C11/00 , H01L27/30 , H01L51/42 , H01L31/0256
CPC分类号： H01L27/305 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/02521 , H01L21/02601 , H01L21/02628 , H01L27/1462 , H01L27/14634 , H01L27/14665 , H01L27/14692 , H01L27/308 , H01L31/02162 , H01L31/022466 , H01L31/0352 , H01L31/035218 , H01L31/03926 , H01L51/0038 , H01L51/0545 , H01L51/0566 , H01L51/4253 , H01L51/426 , H01L2031/0344 , Y02E10/549 , Y10S977/773 , Y10S977/774 , Y10S977/893 , Y10S977/954 , Y10S977/962
摘要： Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.
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公开(公告)号：US20160301841A1
公开(公告)日：2016-10-13
申请号：US15181252
申请日：2016-06-13
发明人： Michael R. Malone , Pierre Henri Rene Della Nave , Michael Charles Brading , Jess Jan Young Lee , Hui Tian , Igor Constantin Ivanov , Edward Hartley Sargent
IPC分类号： H04N5/225 , H04N5/232 , H01L27/146 , H04N5/378
摘要： In various embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed-in portion of the first image projected on the first image sensor array.
摘要翻译： 在各种实施例中，提供了一种成像系统和方法。 在一个实施例中，系统包括第一图像传感器阵列，第一光学系统，用于投影第一图像传感器阵列上的第一图像，第一光学系统具有第一缩放级别。 第二光学系统是在第二图像传感器阵列上投影第二图像，第二光学系统具有第二缩放水平。 第二图像传感器阵列和第二光学系统指向与第一图像传感器阵列和第一光学系统相同的方向。 第二缩放级别大于第一缩放级别，使得投影到第二图像传感器阵列上的第二图像是投影在第一图像传感器阵列上的第一图像的放大部分。
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8.发明申请MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM 有权材料，制造设备和方法，用于稳定，敏感的光电转换器和图像传感器公开(公告)号：US20150048300A1
公开(公告)日：2015-02-19
申请号：US14336783
申请日：2014-07-21
IPC分类号： H01L31/0352 , H01L31/109 , H01L31/0336
CPC分类号： H01L31/101 , H01L27/14603 , H01L31/0224 , H01L31/032 , H01L31/0324 , H01L31/0336 , H01L31/035218 , H01L31/03845 , H01L31/09 , H01L31/109 , Y02E10/50
摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.
摘要翻译： 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括p型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。
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公开(公告)号：US10924703B2
公开(公告)日：2021-02-16
申请号：US16689103
申请日：2019-11-20
IPC分类号： H04N5/378 , H04N5/347 , H04N5/361 , H01L27/146 , H04N5/232 , G02B23/12 , G02B5/20 , H04N5/33
摘要： Various embodiments comprise apparatuses and methods including a light sensor. In one embodiment, an integrated circuit includes an image sensing array region, a first photosensor having a light-sensitive region outside of the image sensing array region, and control circuitry. The control circuitry is arranged in a first mode to read out image data from the image sensing array region, where the data provide information indicative of an image incident on the image sensing array region of the integrated circuit. The control circuitry is arranged in a second mode to read out a signal from the first photosensor indicative of intensity of light incident on the light-sensitive region of the first photosensor. Electrical power consumed by the integrated circuit during the second mode is at least ten times lower than electrical power consumed by the integrated circuit during the first mode. Additional methods and apparatuses are described.
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公开(公告)号：US20190173031A1
公开(公告)日：2019-06-06
申请号：US16153858
申请日：2018-10-08
IPC分类号： H01L51/42 , H01L51/44 , H01L31/07 , B82Y30/00 , H01L31/032 , B82Y20/00 , H01L31/0384 , H01L31/0352
摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.
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