公开(公告)号：US20130277293A1

公开(公告)日：2013-10-24

申请号：US13925350

申请日：2013-06-24

申请人： King Abdulaziz City for Science and Technology

发明人： Sulaiman M. ALFADUL ,  Abdulrahman I. Alabdula'aly ,  Mujahid A. KHAN

IPC分类号： C02F1/48

CPC分类号： C02F1/48 ,  B03C1/01 ,  B03C1/288 ,  B03C1/30 ,  B03C2201/18 ,  B03C2201/26 ,  B82Y30/00 ,  C02F1/288 ,  C02F1/488 ,  C02F1/681 ,  C02F2305/08 ,  C07F15/025 ,  Y10S977/733 ,  Y10S977/773 ,  Y10S977/811 ,  Y10S977/838 ,  Y10S977/896

摘要： A water treatment composition capable of effectively adsorbing pollutants from water is described. The composition includes magnetic extractants, which comprise magnetite nanoparticles containing functional groups. The composition is used to remove from water and aqueous streams oils and other contaminants. A process for removing contaminants from water and apparatus used in the process are also described.

公开(公告)号：US20120250901A1

公开(公告)日：2012-10-04

申请号：US13335041

申请日：2011-12-22

申请人： KAI-LI JIANG ,  XIAO-YANG LIN ,  LIN XIAO ,  SHOU-SHAN FAN

发明人： KAI-LI JIANG ,  XIAO-YANG LIN ,  LIN XIAO ,  SHOU-SHAN FAN

IPC分类号： H04R23/00 ,  B82Y99/00

CPC分类号： H04R23/002 ,  B82Y30/00 ,  Y10S977/733 ,  Y10S977/742 ,  Y10S977/932

摘要： A thermoacoustic device includes a substrate, at least two sound wave generators and at least two signal input devices. The substrate has at least two surfaces. Each of the at least two sound wave generators is located on each of the at least two surfaces. At least one of the at least two sound wave generator includes a carbon film. The carbon film includes at least one carbon nanotube layer and at least one graphene layer stacked with each other. The at least two signal input devices are configured to input signals to the at least two sound wave generator separately.

摘要翻译： 热声装置包括基板，至少两个声波发生器和至少两个信号输入装置。 衬底具有至少两个表面。 所述至少两个声波发生器中的每一个位于所述至少两个表面中的每一个上。 至少两个声波发生器中的至少一个包括碳膜。 碳膜包括至少一个碳纳米管层和彼此堆叠的至少一个石墨烯层。 所述至少两个信号输入装置被配置为分别向所述至少两个声波发生器输入信号。

公开(公告)号：US08033091B2

公开(公告)日：2011-10-11

申请号：US10554312

申请日：2004-04-22

申请人： Marek Michalewicz ,  Zygmunt Rymuza

发明人： Marek Michalewicz ,  Zygmunt Rymuza

IPC分类号： G01D5/14

CPC分类号： B81B3/0051 ,  B81B3/0021 ,  B81B2201/0285 ,  B81B2203/0109 ,  B81B2203/051 ,  G01C19/00 ,  G01D21/00 ,  G01P15/0894 ,  Y10S977/724 ,  Y10S977/725 ,  Y10S977/732 ,  Y10S977/733

摘要： A monolithic micro or nano electromechanical transducer device includes a pair of substrates (20, 25) respectively mounting one or more elongate electrical conductors (40) and resilient solid state hinge means (30, 32) integral with and linking the substrates to relatively locate the substrates so that respective elongate electrical conductors (40) of the substrates are opposed at a spacing that permits a detectable quantum tunnelling current between the conductors when a suitable electrical potential difference is applied across the conductors. The solid state hinge means permits relative parallel translation of the substrates transverse to the elongate electrical conductors.

摘要翻译： 单片微型或纳米机电换能器装置包括分别安装一个或多个细长电导体（40）和弹性固态铰链装置（30,32）的一对基板（20,25），所述弹性固态铰链装置与所述基板成一体并将其连接， 衬底，使得当在导体上施加合适的电势差时，衬底的各个细长电导体（40）以允许导体之间的可检测的量子隧穿电流的间隔相对。 固态铰链装置允许基板横向于细长电导体的相对平行平移。

公开(公告)号：US07960471B1

公开(公告)日：2011-06-14

申请号：US12231423

申请日：2008-08-28

申请人： Loon-Seng Tan ,  Jong-Beom Baek

发明人： Loon-Seng Tan ,  Jong-Beom Baek

IPC分类号： B32B9/00

CPC分类号： C08L71/00 ,  B82Y30/00 ,  C08G65/48 ,  C08G2650/40 ,  C08J5/005 ,  C08J2371/12 ,  Y10S977/733 ,  Y10S977/783 ,  Y10S977/896 ,  Y10S977/897

摘要： A poly(ether-ketone) composite of the formula: wherein CNF is carbon nanofibers and MWNT is multi-walled carbon nanotubes; wherein Ar represents ether-ketone repeating groups of the formula wherein Q is —O— or —O—(CH2)n—O—, wherein n has a value of 2-12; wherein R is —H, —CH3, or —C2H5, m has a value of 1 or 2; wherein R′ is —H or —CH3; and wherein — denoted the presence of a direct C—C bond between Ar and CNF or MWNTg Also provided is a process for preparing the composite.

摘要翻译： 一种下式的聚（醚 - 酮）复合物：其中CNF是碳纳米纤维，MWNT是多壁碳纳米管; 其中Ar表示下式的醚 - 酮重复基团其中Q是-O-或-O-（CH 2）n -O-，其中n具有2-12的值; 其中R是-H，-CH 3或-C 2 H 5，m的值为1或2; 其中R'是-H或-CH 3; 并且其中 - 表示存在Ar和CNF或MWNTg之间的直接C-C键。还提供了制备复合材料的方法。

公开(公告)号：US07777222B2

公开(公告)日：2010-08-17

申请号：US12548131

申请日：2009-08-26

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H01L35/24 ,  H01L51/00 ,  H01L41/00 ,  H03H9/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  H01H1/0094 ,  H01H1/027 ,  H01H2001/0005 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/725 ,  Y10S977/733 ,  Y10S977/755 ,  Y10S977/938 ,  Y10T29/49105

摘要： Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article having at least one nanotube, the article having first and second ends; positioning the conductive article between said first and second structures such that the first structure clamps the first and second ends of the article to the second structure, and such that the first and second output electrodes are opposite each other with the article positioned therebetween; providing at least one signal electrode in electrical communication with the conductive article; and providing at least one control electrode in spaced relation to the conductive article such that the control electrode may control the conductive article to form a conductive pathway between the signal electrode and the first output electrode.

摘要翻译： 纳米管器件结构和制造方法。 制造纳米管开关元件的方法包括：形成具有第一输出电极的第一结构; 形成具有第二输出电极的第二结构; 形成具有至少一个纳米管的导电制品，所述制品具有第一和第二端; 将导电制品定位在所述第一和第二结构之间，使得第一结构将制品的第一和第二端夹持到第二结构，并且使得第一和第二输出电极彼此相对，物品位于它们之间; 提供至少一个与所述导电制品电连通的信号电极; 以及提供与所述导电制品间隔开的至少一个控制电极，使得所述控制电极可以控制所述导电制品以在所述信号电极和所述第一输出电极之间形成导电路径。

公开(公告)号：US20100155864A1

公开(公告)日：2010-06-24

申请号：US12719999

申请日：2010-03-09

申请人： Richard I. Laming ,  Mark Begbie ,  Anthony Traynor

发明人： Richard I. Laming ,  Mark Begbie ,  Anthony Traynor

IPC分类号： H01L29/84

CPC分类号： B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C99/004 ,  B81C2201/0109 ,  H04R7/10 ,  H04R7/18 ,  H04R19/005 ,  H04R2307/207 ,  Y10S977/733

摘要： A MEMS device, for example a capacitive microphone, comprises a flexible membrane 11 that is free to move in response to pressure differences generated by sound waves. A first electrode 13 is mechanically coupled to the flexible membrane 11, and together form a first capacitive plate of the capacitive microphone device. A second electrode 23 is mechanically coupled to a generally rigid structural layer or back-plate 14, which together form a second capacitive plate of the capacitive microphone device. The capacitive microphone is formed on a substrate 1, for example a silicon wafer. A back-volume 33 is provided below the membrane 11, and is formed using a “back-etch” through the substrate 1. A first cavity 9 is located directly below the membrane 11, and is formed using a first sacrificial layer during the fabrication process. Interposed between the first and second electrodes 13 and 23 is a second cavity 17, which is formed using a second sacrificial layer during the fabrication process. A plurality of bleed holes 15 connect the first cavity 9 and the second cavity 17. Acoustic holes 31 are arranged in the back-plate 14 so as to allow free movement of air molecules, such that the sound waves can enter the second cavity 17. The first and second cavities 9 and 17 in association with the back-volume 33 allow the membrane 11 to move in response to the sound waves entering via the acoustic holes 31 in the back-plate 14. The provision of first and second sacrificial layers has the advantage of protecting the membrane during manufacture, and disassociating the back etch process from the definition of the membrane. The bleed holes 15 aid with the removal of the first and second sacrificial layers. The bleed holes 15 also contribute to the operating characteristics of the microphone.

摘要翻译： MEMS器件，例如电容麦克风，包括响应于由声波产生的压力差而自由移动的柔性膜11。 第一电极13机械耦合到柔性膜11，并且一起形成电容式麦克风装置的第一电容板。 第二电极23机械地耦合到大致刚性的结构层或背板14，它们一起形成电容式麦克风装置的第二电容板。 电容麦克风形成在基板1上，例如硅晶片。 背部体积33设置在膜11下方，并且通过基底1的“背蚀刻”形成。第一腔9位于膜11的正下方，并且在制造期间使用第一牺牲层形成 处理。 介于第一和第二电极13和23之间的是第二腔17，其在制造过程中使用第二牺牲层形成。 多个排放孔15连接第一腔9和第二腔17.声孔31布置在背板14中，以便允许空气分子的自由运动，使得声波可以进入第二腔17。 与背容积33相关联的第一和第二空腔9和17允许膜11响应于通过背板14中的声孔31进入的声波而移动。提供第一和第二牺牲层具有 在制造过程中保护膜的优点，以及使背蚀刻工艺与膜的定义分离。 排出孔15有助于去除第一和第二牺牲层。 排放孔15也有助于麦克风的操作特性。

公开(公告)号：US07709880B2

公开(公告)日：2010-05-04

申请号：US11742290

申请日：2007-04-30

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H01L29/78

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/54 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01L27/115 ,  H01L29/78 ,  H01L51/0048 ,  Y10S977/732 ,  Y10S977/733 ,  Y10S977/936

摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

摘要翻译： 具有通过纳米管开关元件控制的栅极的场效应器件。 在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。 第二半导体类型的材料的沟道区域设置在源区和漏区之间。 栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。 纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

公开(公告)号：US20100075467A1

公开(公告)日：2010-03-25

申请号：US12554647

申请日：2009-09-04

申请人： Claude L. BERTIN ,  Thomas RUECKES ,  John E. BERG

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  John E. BERG

IPC分类号： H01L21/8239 ,  H01L21/336

CPC分类号： B82Y10/00 ,  G11C8/10 ,  G11C11/412 ,  G11C11/54 ,  G11C13/025 ,  G11C16/0416 ,  G11C23/00 ,  H01L27/115 ,  Y10S977/733

摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal.

摘要翻译： 非易失性场效应器件和使用它的电路。 非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。 源极，漏极和栅极中的每一个都具有相应的端子。 电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。 源极，漏极和栅极中的其他物体直接连接到其相应的端子。 纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。

公开(公告)号：US20090315011A1

公开(公告)日：2009-12-24

申请号：US12548131

申请日：2009-08-26

申请人： Claude L. BERTIN ,  Thomas RUECKES ,  Brent M. SEGAL

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  Brent M. SEGAL

IPC分类号： H01L27/24 ,  H01L27/115

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  H01H1/0094 ,  H01H1/027 ,  H01H2001/0005 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/725 ,  Y10S977/733 ,  Y10S977/755 ,  Y10S977/938 ,  Y10T29/49105

摘要： Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article having at least one nanotube, the article having first and second ends; positioning the conductive article between said first and second structures such that the first structure clamps the first and second ends of the article to the second structure, and such that the first and second output electrodes are opposite each other with the article positioned therebetween; providing at least one signal electrode in electrical communication with the conductive article; and providing at least one control electrode in spaced relation to the conductive article such that the control electrode may control the conductive article to form a conductive pathway between the signal electrode and the first output electrode.

摘要翻译： 纳米管器件结构和制造方法。 制造纳米管开关元件的方法包括：形成具有第一输出电极的第一结构; 形成具有第二输出电极的第二结构; 形成具有至少一个纳米管的导电制品，所述制品具有第一和第二端; 将导电制品定位在所述第一和第二结构之间，使得第一结构将制品的第一和第二端夹持到第二结构，并且使得第一和第二输出电极彼此相对，物品位于它们之间; 提供至少一个与所述导电制品电连通的信号电极; 以及提供与所述导电制品间隔开的至少一个控制电极，使得所述控制电极可以控制所述导电制品以在所述信号电极和所述第一输出电极之间形成导电路径。

公开(公告)号：US20080079027A1

公开(公告)日：2008-04-03

申请号：US11742290

申请日：2007-04-30

申请人： Claude BERTIN ,  Thomas RUECKES ,  Brent SEGAL

发明人： Claude BERTIN ,  Thomas RUECKES ,  Brent SEGAL

IPC分类号： H01L27/11 ,  H01L29/78

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/54 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01L27/115 ,  H01L29/78 ,  H01L51/0048 ,  Y10S977/732 ,  Y10S977/733 ,  Y10S977/936

摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

摘要翻译： 具有通过纳米管开关元件控制的栅极的场效应器件。 在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。 第二半导体类型的材料的沟道区域设置在源区和漏区之间。 栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。 纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。