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    Photo Sensor
    73.
    发明申请
    Photo Sensor 审中-公开
    照片传感器

    公开(公告)号：US20140124843A1

    公开(公告)日：2014-05-08

    申请号：US13763397

    申请日：2013-02-08

    Applicant: Chang Hun HAN

    Inventor： Chang Hun HAN

    IPC: H01L27/146

    CPC classification number: H01L31/173 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14643 ,  H01L31/02019 ,  H01L31/103

    Abstract: Disclosed is a photo sensor including a first conductive type semiconductor substrate, a photodiode region in a light receiving region of the semiconductor substrate, a first transistor including a first gate, a first source region and a first drain region, the first transistor being adjacent to the photodiode region, and a light-absorption control layer in a first region of the photodiode region, the light-absorption control layer exposing a second region of the photodiode region, wherein the first region is spaced apart from the first source region, and the second region is another portion of the photodiode region contacting the first source region.

    Abstract translation: 公开了一种光传感器，包括第一导电类型半导体衬底，半导体衬底的光接收区域中的光电二极管区域，包括第一栅极，第一源极区域和第一漏极区域的第一晶体管，第一晶体管与 所述光电二极管区域和所述光电二极管区域的第一区域中的光吸收控制层，所述光吸收控制层暴露所述光电二极管区域的第二区域，其中所述第一区域与所述第一源极区域隔开， 第二区域是与第一源极区域接触的光电二极管区域的另一部分。

    ACRYLIC COPOLYMER AND OPTICAL FILM INCLUDING THE SAME
    74.
    发明申请
    ACRYLIC COPOLYMER AND OPTICAL FILM INCLUDING THE SAME 审中-公开
    丙烯酸共聚物和光学膜，包括它们

    公开(公告)号：US20130158201A1

    公开(公告)日：2013-06-20

    申请号：US13805224

    申请日：2011-06-14

    Applicant: Byoung-Il Kang ,  Chang-Hun Han

    Inventor： Byoung-Il Kang ,  Chang-Hun Han

    IPC: C08F22/10

    CPC classification number: C08F22/10 ,  C08F220/18 ,  C08J5/18 ,  C08J2333/06 ,  G02B5/3083 ,  G02F1/13363

    Abstract: Provided are a heat resistant, high strength acrylic copolymer and an optical film including the same, and more particularly, an acrylic copolymer polymerized by including (1) an alkyl(meth)acrylate-based monomer excluding a tert-butyl(meth)acrylate-based monomer, (2) a (meth)acrylate-based monomer including an aliphatic ring and/or an aromatic ring, and (3) a tert-butyl(meth)acrylate-based monomer. The acrylic copolymer according to the present invention has excellent heat resistance as well as transparency being maintained. Also, the optical film including a compounding resin including the acrylic copolymer has excellent transparency, heat resistance, processability, adhesiveness, retardation properties, and durability.

    Abstract translation: 本发明提供耐热性高强度丙烯酸类共聚物和含有该共聚物的光学膜，更具体地说，包括（1）除（甲基）丙烯酸叔丁酯以外的（甲基）丙烯酸烷基酯系单体， （2）包含脂肪族环和/或芳香环的（甲基）丙烯酸酯类单体，和（3）（甲基）丙烯酸叔丁酯系单体。 根据本发明的丙烯酸共聚物具有优异的耐热性和保持透明性。 此外，包括具有丙烯酸共聚物的配混树脂的光学膜具有优异的透明性，耐热性，加工性，粘合性，延迟性和耐久性。

    Image sensor and method for manufacturing the same
    76.
    发明授权
    Image sensor and method for manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号：US08278614B2

    公开(公告)日：2012-10-02

    申请号：US12576489

    申请日：2009-10-09

    Applicant: Chang-Hun Han

    Inventor： Chang-Hun Han

    IPC: H01L31/02

    CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14687

    Abstract: An image sensor and a method of manufacturing an image sensor. An image sensor may include a readout circuitry having a metal line on and/or over a first substrate. An image sensor may include an image sensing part having a first conductive-type conductive layer and/or a second conductive-type conductive layer over a metal line. An image sensor may include a pixel division area formed on and/or over an image sensing part corresponding to a pixel boundary. An image sensor may include a ground contact on and/or over a pixel division area. An image sensor may include a contact plug connected with a sidewall of an image sensing part. A method of manufacturing an image sensor is disclosed.

    Abstract translation: 图像传感器和图像传感器的制造方法。 图像传感器可以包括在第一基板上和/或上方具有金属线的读出电路。 图像传感器可以包括在金属线上具有第一导电型导电层和/或第二导电型导电层的图像感测部件。 图像传感器可以包括形成在对应于像素边界的图像感测部分上和/或上方的像素分割区域。 图像传感器可以包括在像素分割区域上和/或上方的像素分割区域上的接地接触。 图像传感器可以包括与图像感测部件的侧壁连接的接触插塞。 公开了一种制造图像传感器的方法。

    Image sensor and method for manufacturing the same
    78.
    发明授权
    Image sensor and method for manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号：US07883922B2

    公开(公告)日：2011-02-08

    申请号：US12046134

    申请日：2008-03-11

    Applicant: Chang-Hun Han

    Inventor： Chang-Hun Han

    IPC: H01L21/00

    CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

    Abstract: An image sensor and a method for manufacturing an image sensor that has an increased aspect ratio. An image sensor and a method for manufacturing an image sensor that have a relatively large process margin (e.g. even in high level pixels), which may reduce and/or eliminate restrictions in downscaling an image sensor. An image sensor may include at least one of a first unit pixel including a first transfer transistor, a second unit pixel including a second drive transistor, and a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel. A method of manufacturing an image sensor including at least one of forming a first unit pixel including a first transfer transistor, forming a second unit pixel including a second drive transistor, and forming a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel.

    Abstract translation: 一种具有增加的纵横比的图像传感器和图像传感器的制造方法。 用于制造具有相对较大的处理余量（例如甚至高水平像素）的图像传感器的图像传感器和方法，其可以减少和/或消除降低图像传感器的限制。 图像传感器可以包括包括第一传输晶体管的第一单位像素，包括第二驱动晶体管的第二单位像素和将第一单位像素的浮动扩散区电连接到第二驱动晶体管的第二驱动晶体管中的至少一个 第二单位像素。 一种制造图像传感器的方法，包括形成包括第一转移晶体管的第一单位像素，形成包括第二驱动晶体管的第二单位像素和形成将第一单位像素的浮动扩散区域电连接的接点中的至少一个， 第二单位像素的第二驱动晶体管。

    Photodiode of CMOS image sensor and method for manufacturing the same
    80.
    发明授权
    Photodiode of CMOS image sensor and method for manufacturing the same 失效
    CMOS图像传感器的光电二极管及其制造方法

    公开(公告)号：US07732245B2

    公开(公告)日：2010-06-08

    申请号：US11319591

    申请日：2005-12-29

    Applicant: Chang Hun Han

    Inventor： Chang Hun Han

    IPC: H01L21/00

    CPC classification number: H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

    Abstract: A photodiode of a CMOS image sensor and a method for manufacturing the same are provided, in which ions implanted in the vicinity of a device isolation film are prevented from being diffused into a photodiode region to reduce a dark current. The photodiode of a CMOS image sensor includes a heavily doped P-type semiconductor substrate, a lightly doped P-type epitaxial layer formed on the semiconductor substrate, a gate electrode formed on the epitaxial layer, a device isolation film and an N-type photodiode region formed in the epitaxial layer, an insulating film formed on the epitaxial layer to open a portion between the device isolation film and the photodiode region, and a heavily doped P-type diffusion region formed in the epitaxial layer between the device isolation film and the photodiode region.

    Abstract translation: 提供CMOS图像传感器的光电二极管及其制造方法，其中防止注入到器件隔离膜附近的离子扩散到光电二极管区域以减少暗电流。 CMOS图像传感器的光电二极管包括重掺杂P型半导体衬底，形成在半导体衬底上的轻掺杂P型外延层，形成在外延层上的栅电极，器件隔离膜和N型光电二极管 形成在所述外延层中的绝缘膜，形成在所述外延层上以打开所述器件隔离膜和所述光电二极管区域之间的部分的绝缘膜，以及形成在所述器件隔离膜和所述光电二极管区域之间的外延层中的重掺杂P型扩散区域 光电二极管区域。

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