Abstract:
A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.
Abstract:
A method and apparatus for coding a video image is provided, in which a first macro block is coded with intra coding modes, the number of which corresponds to the first macro block, a first intra coding mode having a minimum value and a first minimum value to which the first intra coding mode is applied are acquired, the first minimum value is compared with a threshold that is set for fast coding mode search, and it is determined whether to code a second macro block with intra coding modes, the number of which corresponds to the second macro block, based on the comparison.
Abstract:
A method and packaging machine for preparing rapidly disintegrating formulations for oral administration are disclosed. The present invention is characterized in that a powdery mixture including a pharmaceutically active ingredient and a sugar or a sugar alcohol powder is filled into a packaging material and, thereafter, the mixture, filled in the packaging material, is heated. The present invention can simply and economically prepare an oral formulation which undergoes rapid disintegration in the oral cavity and provides for high-quality administration to patients.
Abstract:
Provided is a method of compressing a reference frame in encoding or decoding moving images. A reference frame to be compressed is divided into basic processing blocks. The basic processing blocks are divided into sub-blocks. A maximum value and a minimum value of pixels within each sub-block are calculated. A necessary bit length needed for compression of each sub-block is obtained based on a difference between the maximum value and the minimum value. An average bit length of the sub-blocks within the basic processing block is calculated based on the calculated necessary bit lengths of the sub-blocks. Bits are variably allocated to each sub-block by adjusting the necessary bit length of each sub-block so that the average bit length of the sub-blocks within a corresponding basic processing block is less than or equal to a preset required bit length. Each sub-block is compressed to the allocated bits.
Abstract:
An air bag apparatus includes: a supporting plate; an air bag case mounted on the supporting plate such that a space is formed therein; an air bag cushion installed in the space and attached to the supporting plate; an inflator for supplying a gas to the air bag cushion, the inflator being mounted at the supporting plate; and a clamping device for clamping a middle portion of the air bag cushion, the clamping device being coupled with the supporting plate. The inflator may supply the gas to side portions of the air bag, such that the side portions expand for a predetermined time while the middle portion is clamped by the clamping device, and when the inflating force of the air bag overcomes the clamping force, the middle portion expands.
Abstract:
A non-volatile memory device comprises a cell region defined at a substrate and a plurality of device isolation layers formed in the cell region to define a plurality of active regions. A charge storage insulator covers substantially the entire top surface of the cell region. A plurality of gate lines are formed on the charge storage insulator that cross over the device isolation layers. Conductive patterns are disposed between predetermined gate lines that penetrate the charge storage insulator to electrically connect with the active regions. According to the method of fabricating the device, a plurality of device isolation layers are formed in the substrate and then a charge storage insulator is formed on an entire surface of the substrate and the device isolation layers. A plurality of parallel gate lines that cross over the device isolation layers are formed on the charge storage insulator and then conductive patterns are formed between predetermined gate lines. The conductive patterns penetrate the charge storage insulator and electrically connect with the active regions.
Abstract:
Disclosed is a method for detecting a scene change in real time in order to control a moving-picture encoding data rate, the method including: dividing a current frame into a plurality of regions, and calculating a dissimilarity metric (DM) of each divided region; determining if the dissimilarity metric of each divided region is beyond a preset reference value; calculating the number of regions, the dissimilarity metric of which is beyond the preset value, in the current frame; and determining that a scene change occurs in the current frame, when the number of regions, the dissimilarity metric of which is beyond the reference preset value, is equal to or greater than a preset threshold value.
Abstract:
A FinFET includes a fin that is on a substrate and extends away from the substrate. A device isolation layer is disposed on the substrate on both sides of the fin. An insulating layer is between the fin and the substrate. The insulating layer is directly connected to the device isolation layer and has a different thickness than the device isolation layer. A gate electrode crosses over the fin. A gate insulating layer is between the gate electrode and the fin. Source and drain regions are on the fins and on opposite sides of the gate electrode. Related nonvolatile memory devices that include FinFETs and methods of making FinFETs and nonvolatile memory devices are also disclosed.
Abstract:
A non-volatile memory device comprises a cell region defined at a substrate and a plurality of device isolation layers formed in the cell region to define a plurality of active regions. A charge storage insulator covers substantially the entire top surface of the cell region. A plurality of gate lines are formed on the charge storage insulator that cross over the device isolation layers. Conductive patterns are disposed between predetermined gate lines that penetrate the charge storage insulator to electrically connect with the active regions. According to the method of fabricating the device, a plurality of device isolation layers are formed in the substrate and then a charge storage insulator is formed on an entire surface of the substrate and the device isolation layers. A plurality of parallel gate lines that cross over the device isolation layers are formed on the charge storage insulator and then conductive patterns are formed between predetermined gate lines. The conductive patterns penetrate the charge storage insulator and electrically connect with the active regions.
Abstract:
Disclosed is a method for controlling bit rates in consideration of wireless channel environment by an apparatus that transmits and receives moving picture encoding data via a wireless network. The apparatus for transmitting/receiving data through a wireless communication network connected to the apparatus including a channel state analyzing unit for analyzing a wireless channel environment, an encoding controller for generating control information containing information about a quantization parameter, skip or non-skip of frames indication, frame type indication, and use or non-use of an Error Resilient Tool (ERT) indication, in consideration of an analyzation result received from the channel state analyzing unit, a moving picture encoding unit for encoding incoming moving picture data, based on the control information received from the encoding controller; and a data transmitting/receiving unit for transferring the encoded moving picture data through the wireless channel to an exterior.