公开(公告)号：US08236642B2

公开(公告)日：2012-08-07

申请号：US12910591

申请日：2010-10-22

Applicant: Chi-San Wei ,  Kuo-Ming Wu ,  Yi-Chun Lin

Inventor： Chi-San Wei ,  Kuo-Ming Wu ,  Yi-Chun Lin

IPC: H01L21/02

CPC classification number: H01L29/1083 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/66659 ,  H01L29/7835

Abstract: A semiconductor structure includes a semiconductor substrate; an n-type tub extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the n-type tub comprises a bottom buried in the semiconductor substrate; a p-type buried layer (PBL) on a bottom of the tub, wherein the p-type buried layer is buried in the semiconductor substrate; and a high-voltage n-type metal-oxide-semiconductor (HVNMOS) device over the PBL and within a region encircled by sides of the n-type tub.

Abstract translation: 半导体结构包括半导体衬底; 从半导体衬底的顶表面延伸到半导体衬底中的n型桶，其中n型桶包括埋在半导体衬底中的底部; 在桶的底部设置p型掩埋层（PBL），其中p型掩埋层埋在半导体衬底中; 和高压n型金属氧化物半导体（HVNMOS）器件，并且在由n型槽的侧面包围的区域内。

公开(公告)号：US20120188175A1

公开(公告)日：2012-07-26

申请号：US13104029

申请日：2011-05-10

Applicant: Yu-Tsung Lu ,  Ching-Chun Lin ,  Jiun-Jie Tsai ,  Tsen-Wei Chang ,  Ting-Wei Lin ,  Hao-Jan Huang ,  Ching-Ho Hung

Inventor： Yu-Tsung Lu ,  Ching-Chun Lin ,  Jiun-Jie Tsai ,  Tsen-Wei Chang ,  Ting-Wei Lin ,  Hao-Jan Huang ,  Ching-Ho Hung

IPC: G06F3/041

CPC classification number: G06F3/04883 ,  G06F3/0416

Abstract: A single finger gesture determination method is disclosed. The single touch gesture determination method includes steps of detecting one or more trigger signals, determining respective categories under a plurality of gesture groups to which the one or more trigger signals belong according to the one or more trigger signals, and deciding a finger gesture represented by the one or more trigger signals according to the determined respective categories under the plurality of gesture groups.

Abstract translation: 公开了单手指手势确定方法。 单触手势确定方法包括以下步骤：检测一个或多个触发信号，根据一个或多个触发信号确定一个或多个触发信号所属的多个手势组下的相应类别，并且确定由 所述一个或多个触发信号根据所述多个手势组下的确定的相应类别。

公开(公告)号：US20120181629A1

公开(公告)日：2012-07-19

申请号：US13007220

申请日：2011-01-14

Applicant: Ru-Yi Su ,  Fu-Chih Yang ,  Chun-Lin Tsai ,  Ker Hsiao Huo ,  Chih-Chang Cheng ,  Ruey-Hsin Liu

Inventor： Ru-Yi Su ,  Fu-Chih Yang ,  Chun-Lin Tsai ,  Ker Hsiao Huo ,  Chih-Chang Cheng ,  Ruey-Hsin Liu

IPC: H01L29/78

CPC classification number: H01L29/7835 ,  H01L27/088 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7816 ,  H01L29/861

Abstract: A device includes a first and a second heavily doped region in a semiconductor substrate. An insulation region has at least a portion in the semiconductor substrate, wherein the insulation region is adjacent to the first and the second heavily doped regions. A gate dielectric is formed over the semiconductor substrate and having a portion over a portion of the insulation region. A gate is formed over the gate dielectric. A floating conductor is over and vertically overlapping the insulation region. A metal line includes a portion over and vertically overlapping the floating conductor, wherein the metal line is coupled to, and carries a voltage of, the second heavily doped region.

Abstract translation: 一种器件包括半导体衬底中的第一和第二重掺杂区域。 绝缘区域在半导体衬底中具有至少一部分，其中绝缘区域与第一和第二重掺杂区域相邻。 栅极电介质形成在半导体衬底之上并且具有在绝缘区域的一部分上的部分。 栅极形成在栅极电介质上。 浮动导体在绝缘区域上方和上方重叠。 金属线包括在浮动导体上方并垂直重叠的部分，其中金属线与第二重掺杂区耦合并承载第二重掺杂区的电压。

公开(公告)号：US20120147342A1

公开(公告)日：2012-06-14

申请号：US12967067

申请日：2010-12-14

Applicant: Yi-Hsin Lin ,  Hung-Chun Lin

Inventor： Yi-Hsin Lin ,  Hung-Chun Lin

IPC: G03B3/04

CPC classification number: G03B3/04 ,  G02B3/14 ,  G02B26/004 ,  G03B21/53 ,  G03B2205/0046 ,  G03B2205/0092

Abstract: A projection apparatus including an illumination system, a light valve, and an imaging system is provided. The illumination system is for emitting an illumination beam. The light valve is disposed on a transmission path of the illumination beam for converting the illumination beam into an image beam. The imaging system includes a projection lens and an electrically tunable focusing lens. The projection lens is disposed on the transmission path of the image beam. The electrically tunable focusing lens is disposed on the transmission path of the image beam. The electrically tunable focusing lens changes a focal length thereof by electricity but not by a mechanism moving positions of lenses.

Abstract translation: 提供了包括照明系统，光阀和成像系统的投影设备。 照明系统用于发射照明光束。 光阀设置在照明光束的传输路径上，用于将照明光束转换为图像光束。 成像系统包括投影透镜和电可调聚焦透镜。 投影透镜设置在图像束的传播路径上。 电可调聚焦透镜设置在图像束的传输路径上。 电可调聚焦透镜通过电而改变其焦距，而不是透镜移动位置的机构。

公开(公告)号：US20120139041A1

公开(公告)日：2012-06-07

申请号：US12959538

申请日：2010-12-03

Applicant: Ru-Yi Su ,  Fu-Chih Yang ,  Chun Lin Tsai ,  Ker Hsiao Huo ,  Chih-Chang Cheng ,  Ruey-Hsin Liu

Inventor： Ru-Yi Su ,  Fu-Chih Yang ,  Chun Lin Tsai ,  Ker Hsiao Huo ,  Chih-Chang Cheng ,  Ruey-Hsin Liu

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7816 ,  H01L21/76202 ,  H01L27/0629 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/861

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes: a drift region having a first doping polarity formed in a substrate; a doped extension region formed in the drift region and having a second doping polarity opposite the first doping polarity, the doped extension region including a laterally-extending component; a dielectric structure formed over the drift region, the dielectric structure being separated from the doped extension region by a portion of the drift region; a gate structure formed over a portion of the dielectric structure and a portion of the doped extension region; and a doped isolation region having the second doping polarity, the doped isolation region at least partially surrounding the drift region and the doped extension region.

Abstract translation: 本发明提供一种半导体器件。 半导体器件包括：漂移区，其具有形成在衬底中的第一掺杂极性; 掺杂的延伸区域形成在所述漂移区域中并具有与所述第一掺杂极性相反的第二掺杂极性，所述掺杂延伸区域包括横向延伸的部件; 在所述漂移区上形成的电介质结构，所述电介质结构通过所述漂移区的一部分与所述掺杂延伸区分离; 形成在电介质结构的一部分上的栅结构和掺杂延伸区的一部分; 以及具有第二掺杂极性的掺杂隔离区，所述掺杂隔离区至少部分地围绕所述漂移区和所述掺杂延伸区。

公开(公告)号：US20120137280A1

公开(公告)日：2012-05-31

申请号：US13171571

申请日：2011-06-29

Applicant: Sheng-Chun Lin ,  Yu-Chuan Chang ,  Yu-Shiang Hung

Inventor： Sheng-Chun Lin ,  Yu-Chuan Chang ,  Yu-Shiang Hung

IPC: G06F15/16 ,  G06F17/30 ,  G06F9/44

CPC classification number: H04L51/36

Abstract: An embodiment of the invention provides an electronic figure. The electronic figure comprises a storage device, a function library and a processing unit. The storage device stores identification data corresponding to an account of a network service system. The function library stores a plurality of function programs and each function program corresponds to a first parameter which is used to determine whether the corresponding function program can be executed. The processing unit executes the function programs according to the corresponding first parameters.

Abstract translation: 本发明的实施例提供一种电子图形。 电子图形包括存储装置，功能库和处理单元。 存储装置存储与网络服务系统的帐户对应的识别数据。 功能库存储多个功能程序，并且每个功能程序对应于用于确定是否可以执行相应的功能程序的第一参数。 处理单元根据对应的第一参数执行功能程序。

公开(公告)号：US20120132995A1

公开(公告)日：2012-05-31

申请号：US12956025

申请日：2010-11-30

Applicant: Chih-Chang Cheng ,  Ruey-Hsin Liu ,  Ru-Yi Su ,  Fu-Chih Yang ,  Chun Lin Tsai

Inventor： Chih-Chang Cheng ,  Ruey-Hsin Liu ,  Ru-Yi Su ,  Fu-Chih Yang ,  Chun Lin Tsai

IPC: H01L27/06 ,  H01L21/02

CPC classification number: H01L27/0288 ,  H01L23/5256 ,  H01L27/0255 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure provides a semiconductor device that includes a transistor including a substrate, a source, a drain, and a gate, and a fuse stacked over the transistor. The fuse includes an anode contact coupled to the drain of the transistor, a cathode contact, and a resistor coupled to the cathode contact and the anode contact via a first Schottky diode and a second Schottky diode, respectively. A method of fabricating such semiconductor devices is also provided.

Abstract translation: 本公开提供了一种半导体器件，其包括晶体管，其包括衬底，源极，漏极和栅极以及堆叠在晶体管上的熔丝。 保险丝包括耦合到晶体管的漏极的阳极触点，阴极触点和分别经由第一肖特基二极管和第二肖特基二极管耦合到阴极触点和阳极触点的电阻器。 还提供了一种制造这种半导体器件的方法。

公开(公告)号：US20120119265A1

公开(公告)日：2012-05-17

申请号：US12944959

申请日：2010-11-12

Applicant: Ru-Yi Su ,  Fu-Chih Yang ,  Chun Lin Tsai ,  Chih-Chang Cheng ,  Ruey-Hsin Liu

Inventor： Ru-Yi Su ,  Fu-Chih Yang ,  Chun Lin Tsai ,  Chih-Chang Cheng ,  Ruey-Hsin Liu

IPC: H01L29/78 ,  H01L21/22 ,  H01L21/336

CPC classification number: H01L29/7816 ,  H01L21/2253 ,  H01L21/26513 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/105 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66795 ,  H01L29/7835

Abstract: The present disclosure provides a method for fabricating a high-voltage semiconductor device. The method includes designating first, second, and third regions in a substrate. The first and second regions are regions where a source and a drain of the semiconductor device will be formed, respectively. The third region separates the first and second regions. The method further includes forming a slotted implant mask layer at least partially over the third region. The method also includes implanting dopants into the first, second, and third regions. The slotted implant mask layer protects portions of the third region therebelow during the implanting. The method further includes annealing the substrate in a manner to cause diffusion of the dopants in the third region.

Abstract translation: 本公开提供了一种用于制造高压半导体器件的方法。 该方法包括在衬底中指定第一，第二和第三区域。 第一和第二区域分别是将形成半导体器件的源极和漏极的区域。 第三区域分隔第一和第二区域。 该方法还包括至少部分地在第三区域上形成开槽的注入掩模层。 该方法还包括将掺杂剂注入到第一，第二和第三区域中。 开槽植入物掩模层在植入期间保护其下方的第三区域的部分。 该方法还包括以使得掺杂剂在第三区域中扩散的方式退火衬底。

公开(公告)号：US20120114262A1

公开(公告)日：2012-05-10

申请号：US13091137

申请日：2011-04-21

Applicant: Chi-Chang Yu ,  Meng-Chun Lin ,  Homer H. Chen

Inventor： Chi-Chang Yu ,  Meng-Chun Lin ,  Homer H. Chen

IPC: G06K9/40

CPC classification number: G06T5/006 ,  G06T2207/20021

Abstract: The present invention provides an image correction method and a related image correction system which can correct images captured via a fisheye lens or a ultra-wide angle lens camera so as to alleviate geometrical distortion in the images, and geometrically adjust the images according to user's requirements. Wherein, the present invention further enhances the processing performance of image correction computation by a memory allocation technique.

Abstract translation: 本发明提供一种图像校正方法和相关图像校正系统，其可以校正经由鱼眼镜头或超广角镜头相机拍摄的图像，以减轻图像中的几何失真，并根据用户要求进行几何调整图像 。 其中，本发明通过存储器分配技术进一步提高图像校正计算的处理性能。

公开(公告)号：US08160746B2

公开(公告)日：2012-04-17

申请号：US12031718

申请日：2008-02-15

Applicant: Wei-Han Wang ,  Ya-Hui Tsai ,  Yen-Chun Lin

Inventor： Wei-Han Wang ,  Ya-Hui Tsai ,  Yen-Chun Lin

IPC: G05B19/19

CPC classification number: B25J9/1671 ,  G05B2219/39065 ,  G05B2219/40089 ,  G05B2219/40095 ,  G05B2219/40099 ,  G05B2219/40607

Abstract: System and method for graphically allocating robot's working space are provided. The system includes an image extractor, a task-allocating server and a robot. A graphic user interface (GUI) of the task-allocating server includes a robot's working scene area, a space attribute allocating area and a robot's task area. Thus, a user assigns one certain space area in the robot's working scene area with a “wall” attribute, or another space area with a “charging station” attribute. Meanwhile, by using the GUI, the user directly assigns the robot to execute a specific task at a certain area. Hence, the user or remote controller facilitates the robot to provide safer and more effective service through his/her environment recognition.

Abstract translation: 提供了图形化分配机器人工作空间的系统和方法。 该系统包括图像提取器，任务分配服务器和机器人。 任务分配服务器的图形用户界面（GUI）包括机器人的工作场景区域，空间属性分配区域和机器人的任务区域。 因此，用户在机器人的工作场景区域中分配一个具有“墙”属性的特定空间区域或者具有“充电站”属性的另一个空间区域。 同时，通过使用GUI，用户直接指定机器人在特定区域执行特定任务。 因此，用户或遥控器便于机器人通过他/她的环境识别来提供更安全和更有效的服务。