Method of manufacturing display device
    71.
    发明授权
    Method of manufacturing display device 失效
    显示装置的制造方法

    公开(公告)号:US07759141B2

    公开(公告)日:2010-07-20

    申请号:US12155237

    申请日:2008-05-30

    CPC classification number: H01L27/3267 H01L51/5218

    Abstract: A method of manufacturing a display device includes: preparing a substrate including a first area and a second area, forming a first layer on the first area and the second area, forming a second layer on the first layer of the first area, respectively forming a first electrode layer on the second layer of the first area and the first layer of the second area, forming a reflective layer on the first electrode layer of the first area, and forming a second electrode layer on the reflective layer.

    Abstract translation: 制造显示装置的方法包括:准备包括第一区域和第二区域的基板,在第一区域和第二区域上形成第一层,在第一区域的第一层上形成第二层,分别形成第一区域 在第一区域的第二层和第二区域的第一层上形成第一电极层,在第一区域的第一电极层上形成反射层,并在反射层上形成第二电极层。

    LASER IRRADIATION DEVICE AND METHOD OF FABRICATING OLED USING THE SAME
    73.
    发明申请
    LASER IRRADIATION DEVICE AND METHOD OF FABRICATING OLED USING THE SAME 审中-公开
    激光辐照装置及使用其制造OLED的方法

    公开(公告)号:US20070267629A1

    公开(公告)日:2007-11-22

    申请号:US11751294

    申请日:2007-05-21

    CPC classification number: H01L51/0013 B23K26/0676 B41J2/45 H01L51/56

    Abstract: A laser irradiation device and a method of fabricating an OLED having an increased laser efficiency. The laser irradiation device includes: a light source to produce a laser beam; a collimation lens disposed adjacent to the light source; and an asymmetrical micro lens array disposed adjacent to the collimation lens. The method includes: providing a substrate having a first electrode; providing a donor substrate for laser transfer, including a sequentially stacked a base layer, a light-to-heat conversion layer, and a transfer layer; disposing the donor substrate on the substrate so that the transfer layer faces the substrate; and irradiating a predetermined region of the base layer using a laser irradiation device having a light source, a collimation lens, and an asymmetrical micro lens array, to transfer the transfer layer onto the substrate, and forming an organic layer pattern on the substrate.

    Abstract translation: 激光照射装置和制造具有提高的激光效率的OLED的方法。 激光照射装置包括:产生激光束的光源; 准直透镜,邻近于光源设置; 以及与准直透镜相邻设置的非对称微透镜阵列。 该方法包括:提供具有第一电极的基板; 提供用于激光转移的施主衬底,包括顺序堆叠的基底层,光热转换层和转印层; 将施主衬底设置在衬底上,使得转移层面向衬底; 并且使用具有光源,准直透镜和不对称微透镜阵列的激光照射装置照射基底层的预定区域,以将转印层转印到基板上,并在基板上形成有机层图案。

    EDMOS device having a lattice type drift region and method of manufacturing the same
    74.
    发明授权
    EDMOS device having a lattice type drift region and method of manufacturing the same 有权
    具有晶格型漂移区域的EDMOS器件及其制造方法

    公开(公告)号:US06770529B2

    公开(公告)日:2004-08-03

    申请号:US10611502

    申请日:2003-06-30

    CPC classification number: H01L29/0634 H01L29/7835

    Abstract: The present invention provides an EDMOS (extended drain MOS) device having a lattice type drift region and a method of manufacturing the same. In the case of n channel EDMOS(nEDMOS), the drift region has a lattice structure in which an n lattice having a high concentration and a p lattice having a low concentration are alternately arranged. As a drain voltage is applied, a depletion layer is abruptly extended by a pn junction of the n lattice and the p lattice, so that the entire drift region is easily depleted. Therefore, a breakdown voltage of the device is increased, and an on resistance of the device is decreased due to the n lattice with high concentration.

    Abstract translation: 本发明提供一种具有晶格型漂移区域的EDMOS(延伸漏极MOS)器件及其制造方法。 在n沟道EDMOS(nEDMOS)的情况下,漂移区域具有晶格结构,其中具有高浓度的n晶格和具有低浓度的p晶格交替排列。 当施加漏极电压时,耗尽层被n晶格和p晶格的pn结突然延伸,使得整个漂移区域容易耗尽。 因此,器件的击穿电压增加,并且由于具有高浓度的n晶格,器件的导通电阻降低。

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