Semiconductor metrology and defect classification using electron microscopy

    公开(公告)号:US10580673B2

    公开(公告)日:2020-03-03

    申请号:US16198658

    申请日:2018-11-21

    Abstract: In some embodiments, a first plurality of electron-microscope images for respective instances of a semiconductor structure is obtained from a first source. The electron-microscope images of the first plurality show different values of one or more semiconductor-fabrication parameters. A model is trained that specifies a relationship between the first plurality of electron-microscope images and the values of the one or more semiconductor-fabrication parameters. A second plurality of electron-microscope images for respective instances of the semiconductor structure on one or more semiconductor wafers is collected. The one or more semiconductor wafers are distinct from the first source. Values of the one or more semiconductor-fabrication parameters for the second plurality of electron-microscope images are predicted using the model.

    Capture of repeater defects on a semiconductor wafer

    公开(公告)号:US10557802B2

    公开(公告)日:2020-02-11

    申请号:US16101553

    申请日:2018-08-13

    Abstract: Repeater analysis at a first threshold identifies repeater defects. The repeater defects are located at a coordinate that is the same on each reticle. Images on every reticle of the semiconductor wafer at the coordinate are received, and a plurality of signed difference images are obtained. A repeater threshold for signed difference images is calculated, as is consistency of the polarity. The threshold is applied to the images and a number of defects per each repeater that remain are determined. A secondary repeater threshold can be applied for nuisance filtering.

    Activation of wafer particle defects for spectroscopic composition analysis

    公开(公告)号:US10551320B2

    公开(公告)日:2020-02-04

    申请号:US15419355

    申请日:2017-01-30

    Inventor: Kurt L. Haller

    Abstract: Methods and systems for detecting a particle defect on a wafer surface, transforming the particle to a spectroscopically active state, and identifying a material composition of the activated particle by a spectroscopic technique are described herein. Particle defects are transformed by chemical treatment, thermal treatment, photochemical treatment, or a combination thereof, such that an activated particle exhibits atomic vibrational bands that can be observed spectroscopically. In one embodiment, a surface inspection system detects the presence of a particle defect on a wafer surface, activates observable Raman bands in one or more of the detected particles, and identifies the material composition of the activated particle by a spectroscopic technique. By performing both defect detection and composition analysis on the same inspection tool, it is not necessary to transfer a wafer to a different review tool, or combination of tools, to perform composition analysis of particle defects deposited on semiconductor wafers.

    Reducing Device Overlay Errors
    75.
    发明申请

    公开(公告)号:US20200033737A1

    公开(公告)日:2020-01-30

    申请号:US16077214

    申请日:2018-07-30

    Abstract: Process control methods, metrology targets and production systems are provided for reducing or eliminating process overlay errors. Metrology targets have pair(s) of periodic structures with different segmentations, e.g., no segmentation in one periodic structure and device-like segmentation in the other periodic structure of the pair. Process control methods derive metrology measurements from the periodic structures at the previous layer directly following the production thereof, and prior to production of the periodic structures at the current layer, and use the derived measurements to adjust lithography stage(s) that is part of production of the current layer. Production system integrate lithography tool(s) and metrology tool(s) into a production feedback loop that enables layer-by-layer process adjustments.

    Ultra-high sensitivity hybrid inspection with full wafer coverage capability

    公开(公告)号:US10545099B1

    公开(公告)日:2020-01-28

    申请号:US16272905

    申请日:2019-02-11

    Abstract: Disclosed are apparatus and methods for detecting defects on a semiconductor sample. An optical inspector is first used to inspect a semiconductor sample with an aggressively predefined threshold selected to detect candidate defect and nuisance sites at corresponding locations across the sample. A high-resolution distributed probe inspector includes an array of miniature probes that are moved relative to the sample to scan and obtain a high-resolution image of each site to detect and separate the candidate defect sites from the nuisance sites. A higher-resolution probe is then used to obtain a higher-resolution image of each candidate site to obtain a high-resolution image of each site to separate real defects that adversely impact operation of any devices on the sample from the candidate defects.

    Magnetically Microfocused Electron Emission Source

    公开(公告)号:US20200013579A1

    公开(公告)日:2020-01-09

    申请号:US16450242

    申请日:2019-06-24

    Abstract: A magnetically microfocused electron emission source apparatus is disclosed. The apparatus may include a magnetic emitter unit, wherein the magnetic emitter unit comprises an emitter. Further, the magnetic emitter unit may include one or more magnetic portions formed from one or more magnetic materials, wherein the one or more magnetic portions of the magnetic emitter unit are configured to generate a magnetic field proximate to a tip of the emitter of the magnetic emitter unit for enhancing focusing of the emitted electrons from the electron emitter.

    Haze mask system for haze suppression

    公开(公告)号:US10522426B1

    公开(公告)日:2019-12-31

    申请号:US16271506

    申请日:2019-02-08

    Abstract: This system and method minimize an effect of haze to signal-to-noise ratio and compensate for haze on the haze map. A first mask with a first aperture is disposed along the path of the light beam between a light source and a collector. A first actuator moves the first mask along a tangential direction. A second mask with a second aperture is disposed along the path of the light beam between the first mask and the collector. A second actuator moves the second mask along a radial direction perpendicular to the tangential direction. The first mask and the second mask are independently movable along the tangential direction and the radial direction using the first actuator and the second actuator.

    PROCESS AND METROLOGY CONTROL, PROCESS INDICATORS AND ROOT CAUSE ANALYSIS TOOLS BASED ON LANDSCAPE INFORMATION

    公开(公告)号:US20190391557A1

    公开(公告)日:2019-12-26

    申请号:US16013344

    申请日:2018-06-20

    Abstract: Methods and metrology modules are provided, which derive landscape information (expressing relation(s) between metrology metric(s) and measurement parameters) from produced wafers, identifying therein indications for production process changes, and modify production process parameters with respect to the identified indications, to maintain the production process within specified requirements. Process changes may be detected in wafer(s), wafer lot(s) and batches, and the information may be used to detect root causes for the changes with respect to production tools and steps and to indicate tool aging and required maintenance. The information and its analysis may further be used to optimize the working point parameters, to optimizing designs of devices and/or targets and/or to train corresponding algorithms to perform the identifying, e.g., using training wafers.

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