公开(公告)号：US07166881B2

公开(公告)日：2007-01-23

申请号：US10685824

申请日：2004-08-23

申请人： Wen Chin Lin ,  Denny D. Tang ,  Chien-Chung Hung

发明人： Wen Chin Lin ,  Denny D. Tang ,  Chien-Chung Hung

IPC分类号： H01L29/76

CPC分类号： G11C11/15 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/228

摘要： The present disclosure provides an improved magnetic memory cell. The magnetic memory cell includes a switching element and two magnetic tunnel junction (MTJ) devices. A conductor connects the first and second MTJ devices in a parallel configuration, and serially connecting the parallel configuration to an electrode of the switching element. The resistance of the first MTJ device is different from the resistance of the second.

摘要翻译： 本公开提供了一种改进的磁存储单元。 磁存储单元包括开关元件和两个磁性隧道结（MTJ）器件。 导体以并联结构连接第一和第二MTJ装置，并且将并联配置串联连接到开关元件的电极。 第一台MTJ装置的电阻不同于第二台的电阻。

公开(公告)号：US07105879B2

公开(公告)日：2006-09-12

申请号：US10827769

申请日：2004-04-20

申请人： Wen Chin Lin ,  Denny Tang ,  Li-shyue Lai ,  Chao-Hsiung Wang

发明人： Wen Chin Lin ,  Denny Tang ,  Li-shyue Lai ,  Chao-Hsiung Wang

IPC分类号： H01L29/76

CPC分类号： G11C11/15 ,  G11C5/063

摘要： A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write lines has a width narrower than that of the MTJ.

公开(公告)号：US07071478B2

公开(公告)日：2006-07-04

申请号：US10816612

申请日：2004-04-02

申请人： Wen Chin Lin ,  Denny Tang ,  Li-shyue Lai ,  John Chern ,  Jyh-Chyurn Guo ,  Wan-Yih Lien

发明人： Wen Chin Lin ,  Denny Tang ,  Li-shyue Lai ,  John Chern ,  Jyh-Chyurn Guo ,  Wan-Yih Lien

IPC分类号： G21K4/00

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31788

摘要： A method and system is disclosed for directing charged particles on predetermined areas on a target semiconductor substrate. After aligning a wafer mask with a semiconductor wafer, with the wafer mask having one or more mask patterns thereon, the charged particles are directed to pass through the mask patterns to land on one or more selected areas on the semiconductor wafer.

摘要翻译： 公开了一种用于将带电粒子引导到目标半导体衬底上的预定区域上的方法和系统。 在将晶片掩模与半导体晶片对准之后，晶片掩模在其上具有一个或多个掩模图案，带电粒子被引导通过掩模图案，以着陆在半导体晶片上的一个或多个选定的区域上。

公开(公告)号：US07042032B2

公开(公告)日：2006-05-09

申请号：US10401945

申请日：2003-03-27

申请人： Wen-Chin Lin ,  Denny Duan-Lee Tang ,  Chao-Hsiung Wang

发明人： Wen-Chin Lin ,  Denny Duan-Lee Tang ,  Chao-Hsiung Wang

IPC分类号： H01L29/76

CPC分类号： H01L43/08 ,  G11C11/15 ,  H01L43/12

摘要： A magnetoresistive magnetic data storage product and a method for fabrication thereof both employ a magnetic data storage device formed over a substrate. The magnetic data storage device comprises a free magnetoresistive material layer separated from a pinned magnetoresistive material layer by a dielectric spacer material layer, each having a sidewall. The magnetic data storage product also comprises a sidewall spacer material layer formed annularly surrounding and covering the sidewall of at least one of the free magnetoresistive material layer and the pinned magnetoresistive material layer. The magnetic data storage product is fabricated with enhanced magnetic data storage density.

摘要翻译： 磁阻磁数据存储产品及其制造方法都采用形成在衬底上的磁数据存储装置。 磁数据存储装置包括通过电介质间隔物材料层与固定磁阻材料层分离的自由磁阻材料层，每层具有侧壁。 磁数据存储产品还包括环形围绕并覆盖自由磁阻材料层和钉扎磁阻材料层中的至少一个的侧壁的侧壁间隔物材料层。 磁数据存储产品采用增强的磁数据存储密度制造。

公开(公告)号：US07035083B2

公开(公告)日：2006-04-25

申请号：US10804899

申请日：2004-03-19

申请人： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chung-Long Chang ,  Chun-Hon Chen

发明人： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chung-Long Chang ,  Chun-Hon Chen

IPC分类号： H01G4/06

CPC分类号： H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor for use within a microelectronic product employs a first capacitor plate layer that includes a first series of horizontally separated and interconnected tines. A capacitor dielectric layer separates the first capacitor plate layer from a second capacitor plate layer. The second capacitor plate layer includes a second series of horizontally separated and interconnected tines horizontally interdigitated with the first series of horizontally separated and interconnected tines. The capacitor is formed employing a self-aligned method and the capacitor dielectric layer is formed in a serpentine shape.

摘要翻译： 在微电子产品中使用的电容器采用第一电容器板层，其包括第一系列水平分离和互连的尖齿。 电容器电介质层将第一电容器板层与第二电容器板层分开。 第二电容器板层包括与第一系列水平分离和互相联接的齿水平地交叉指向的第二系列水平分离和互连的齿。 使用自对准方法形成电容器，并且电容器介电层形成为蛇形形状。

公开(公告)号：US20050077485A1

公开(公告)日：2005-04-14

申请号：US10681541

申请日：2003-10-08

申请人： Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin ,  Li-Shyue Lai

发明人： Chao-Hsiung Wang ,  Denny Tang ,  Wen-Chin Lin ,  Li-Shyue Lai

IPC分类号： G21G5/00 ,  H01L21/027

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

摘要： A method and system is disclosed for concentrating high energy particles on a predetermined area on a target semiconductor substrate. A high energy source for generating a predetermined amount of high energy particles, and an electromagnetic radiation source for generating low energy beams are used together. The system also uses a mask set having at least one mask with at least one alignment area and at least one mask target area thereon, the mask target area passing more high energy particles then any other area of the mask. At least one protection shield is incorporated in the system for protecting the alignment area from being exposed to the high energy particles, wherein the mask is aligned with the predetermined target semiconductor substrate by passing the low energy beams through the alignment area, wherein the high energy particles generated by the high energy source pass through the mask target area to land on the predetermined area on the target semiconductor substrate.

摘要翻译： 公开了一种用于将高能粒子集中在目标半导体衬底上的预定区域上的方法和系统。 用于产生预定量的高能粒子的高能量源和用于产生低能量束的电磁辐射源一起使用。 该系统还使用具有至少一个具有至少一个对准区域和至少一个掩模目标区域的掩模的掩模组，掩模目标区域通过更多的高能粒子，然后通过掩模的任何其它区域。 至少一个保护屏蔽被并入系统中，用于保护对准区域不暴露于高能粒子，其中通过使低能量束通过对准区域，掩模与预定目标半导体衬底对齐，其中高能量 由高能量源产生的粒子通过掩模对象区域落在目标半导体衬底上的预定区域上。

公开(公告)号：US20140001940A1

公开(公告)日：2014-01-02

申请号：US13558355

申请日：2012-07-26

申请人： SHENG-TIEN CHANG ,  CHIN-MING CHEN ,  CHING-JOU CHEN ,  WEN-CHIN LIN ,  WEN-CHIEH WANG

发明人： SHENG-TIEN CHANG ,  CHIN-MING CHEN ,  CHING-JOU CHEN ,  WEN-CHIN LIN ,  WEN-CHIEH WANG

IPC分类号： H05K5/02

CPC分类号： G06F1/181 ,  H05K5/0208

摘要： An enclosure includes a chassis, a front panel pivotably attached to the chassis, a latching member movably attached to the front panel for latching the front panel to the chassis, and a controlling apparatus. The controlling apparatus utilizes a connecting pole to engage with or disengage from the latching member, to control the latching member to be locked to the chassis or released from the chassis.

摘要翻译： 壳体包括底盘，可枢转地连接到底盘的前面板，可移动地附接到前面板以将前面板锁定到底盘的闩锁构件，以及控制装置。 控制装置利用连接杆与闩锁构件接合或脱开，以控制闩锁构件被锁定到底盘或从底盘释放。

公开(公告)号：US20120142190A1

公开(公告)日：2012-06-07

申请号：US12962055

申请日：2010-12-07

申请人： Wei-Che TSAO ,  Wen-Chin Lin

发明人： Wei-Che TSAO ,  Wen-Chin Lin

IPC分类号： H01L21/306

CPC分类号： H01L21/76898 ,  H01L21/7684

摘要： A method for manufacturing TSVs comprises following steps: A stack structure having a substrate, an ILD layer and a dielectric stop layer is provided, in which an opening penetrating through the ILD layer and the dialectic stop layer and further extending into the substrate is formed. After an insulator layer and a metal barrier are formed on the stack structure, a top metal layer is formed on the stack structure to fulfill the opening. A first planarization process stopping on the metal barrier is conducted, wherein the first planarization process has a polishing rate for removing the metal barrier less than that for removing the top metal layer. A second planarization process stopping on the dielectric stop layer is conducted, wherein the second planarization process has a polishing rate for removing the insulator layer greater than that for removing the dielectric stop layer. The dielectric stop layer is than removed.

摘要翻译： 制造TSV的方法包括以下步骤：提供具有基板，ILD层和电介质停止层的堆叠结构，其中形成穿透ILD层和辩证阻止层并进一步延伸到基板中的开口。 在堆叠结构上形成绝缘体层和金属屏障之后，在堆叠结构上形成顶部金属层以实现开口。 进行停止在金属屏障上的第一平面化处理，其中第一平面化工艺具有除去金属屏障的抛光速率小于除去顶部金属层的抛光速率。 进行停止在电介质停止层上的第二平坦化工艺，其中第二平坦化工艺具有用于除去绝缘体层的抛光速率大于去除电介质停止层的抛光速率。 电介质停止层除去。

公开(公告)号：US20120048296A1

公开(公告)日：2012-03-01

申请号：US12868726

申请日：2010-08-26

申请人： Wen-Chin Lin ,  Kai-Chun Yang ,  Jen-Chieh Lin ,  Jeng-Yu Fang ,  Chia-Lin Hsu ,  Teng-Chun Tsai ,  Wei-Che Tsao

发明人： Wen-Chin Lin ,  Kai-Chun Yang ,  Jen-Chieh Lin ,  Jeng-Yu Fang ,  Chia-Lin Hsu ,  Teng-Chun Tsai ,  Wei-Che Tsao

IPC分类号： B08B7/00 ,  B08B3/00

CPC分类号： C11D11/0047 ,  C11D11/0064 ,  H01L21/02074

摘要： A cleaning method for a wafer is provided. First, a first cleaning process is performed wherein the first cleaning process includes providing a cleaning solution having a first concentration. Next, a second cleaning process is performed, wherein the second cleaning process includes providing the cleaning solution having a second concentration. The second concentration is substantially greater than the first concentration. Next, a post-cleaning process is performed to provide dilute water.

摘要翻译： 提供了一种用于晶片的清洁方法。 首先，进行第一清洗处理，其中第一清洗过程包括提供具有第一浓度的清洗溶液。 接下来，执行第二清洁处理，其中第二清洁处理包括提供具有第二浓度的清洁溶液。 第二浓度显着大于第一浓度。 接下来，进行后清洗处理以提供稀释水。

公开(公告)号：US20110041265A1

公开(公告)日：2011-02-24

申请号：US12591236

申请日：2009-11-13

申请人： Wen-Chin Lin ,  Chien-Wen Lee

发明人： Wen-Chin Lin ,  Chien-Wen Lee

IPC分类号： C09B62/00

CPC分类号： C09B62/085 ,  C09B62/043 ,  C09B62/06 ,  C09B62/09 ,  C09B62/095 ,  C09B62/10 ,  C09B67/0072 ,  C09B67/0073

摘要： The present invention relates to a reactive printing dye composition, which includes: (a) at least one reactive dye; (b) an organic buffer; and (c) a mirabilite or a dispersant. The reactive printing dye composition of the present invention is capable for being used in the fabric-dyeing, for example, dyeing of cotton, hemp, silk, rayon, wool, blending, etc. The reactive printing dye composition of the present invention is advantageous in high pH value stability, high storage stability, and reduced degradation in dyeing strength. In addition, the present invention further provides an aqueous reactive printing dye composition.

摘要翻译： 本发明涉及一种反应性印花染料组合物，其包括：（a）至少一种活性染料; （b）有机缓冲液; 和（c）芒硝或分散剂。 本发明的活性印刷染料组合物能够用于织物染色，例如棉，麻，丝，人造丝，羊毛，混纺等的染色。本发明的反应性印花染料组合物是有利的 在高pH值稳定性，高储存稳定性和染色强度降低降低。 此外，本发明还提供一种水性反应性印花染料组合物。