Tunable laser using III-V gain materials
    78.
    发明授权
    Tunable laser using III-V gain materials 有权
    可调谐激光器采用III-V增益材料

    公开(公告)号:US09020001B2

    公开(公告)日:2015-04-28

    申请号:US13871343

    申请日:2013-04-26

    Abstract: Disclosed herein are techniques, methods, structures and apparatus that provide a laser monolithically integrated in a silicon photonic integrated circuit (PIC) that is suitable for high-performance coherent fiber-optic telecommunications and other applications. Among the features of a laser according to the present disclosure, and in particular a hybrid InGaAsP/Si laser, is an integrated Si isolator to protect the laser from back reflections; optical, rather than electrical pumping; and coupling the optical pump using an InGaAsP grating coupler that acts simultaneously as a WDM coupler and laser mirror.

    Abstract translation: 本文公开了提供单片集成在适合于高性能相干光纤通信和其他应用的硅光子集成电路(PIC)中的激光器的技术,方法,结构和装置。 在根据本公开的激光器的特征之中,特别是混合InGaAsP / Si激光器是集成的Si隔离器,用于保护激光免受后反射; 光学,而不是电泵送; 并使用同时作为WDM耦合器和激光反射镜的InGaAsP光栅耦合器耦合光泵。

    Low-loss, wide-band grating coupler and method of making same
    79.
    发明授权
    Low-loss, wide-band grating coupler and method of making same 有权
    低损耗宽带光栅耦合器及其制作方法

    公开(公告)号:US08883018B2

    公开(公告)日:2014-11-11

    申请号:US13733118

    申请日:2013-01-02

    Abstract: A method for fabricating a grating coupler having a bottom mirror in a semiconductor wafer including etching a trench from a top surface of a wafer and around a grating coupler formed in the wafer; etching a void underneath the grating coupler; etching a via into the void from the backside of the wafer; and depositing a mirror on the bottom of the grating coupler. Alternatively, additional oxide may be deposited on the bottom of the grating coupler prior to the deposition of the mirror such that a desirable oxide thickness on the bottom is achieved.

    Abstract translation: 一种用于制造在半导体晶片中具有底镜的光栅耦合器的方法,包括从晶片的顶表面蚀刻沟槽并围绕形成在晶片中的光栅耦合器; 蚀刻光栅耦合器下面的空隙; 将晶片从晶片的背面蚀刻到空隙中; 以及在光栅耦合器的底部上沉积反射镜。 或者,在沉积镜子之前,可以在光栅耦合器的底部上沉积另外的氧化物,使得实现底部上所需的氧化物厚度。

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