公开(公告)号：US20220075276A1

公开(公告)日：2022-03-10

申请号：US17419648

申请日：2019-12-24

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Marc Johannes NOOT ,  Kaustuve BHATTACHARYYA ,  Arie Jeffrey DEN BOEF ,  Grzegorz GRZELA ,  Timothy Dugan DAVIS ,  Olger Victor ZWIER ,  Ralph Timtheus HUIJGEN ,  Peter David ENGBLOM ,  Jan-Willem GEMMINK

IPC: G03F7/20 ,  G06T7/00 ,  G01N21/47

Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.

公开(公告)号：US20220074875A1

公开(公告)日：2022-03-10

申请号：US17419653

申请日：2019-12-19

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA

IPC: G01N23/20 ,  G03F7/20 ,  G06T5/10

Abstract: A method includes receiving an image formed in a metrology apparatus wherein the image comprises at least the resulting effect of at least two diffraction orders, and processing the image wherein the processing comprises at least a filtering step, for example a Fourier filter. The process of applying a filter may be obtained also by placing an aperture in the detection branch of the metrology apparatus.

公开(公告)号：US20210103227A1

公开(公告)日：2021-04-08

申请号：US17124758

申请日：2020-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Timothy Dugan DAVIS ,  Peter David ENGBLOM ,  Kaustuve BHATTACHARYYA

IPC: G03F9/00 ,  G03F7/20 ,  G01B11/27

Abstract: A method including: determining recipe consistencies between one substrate measurement recipe of a plurality of substrate measurement recipes and each other substrate measurement recipe of the plurality of substrate measurement recipes; calculating a function of the recipe consistencies; eliminating the one substrate measurement recipe from the plurality of substrate measurement recipes if the function meets a criterion; and reiterating the determining, calculating and eliminating until a termination condition is met. Also disclosed herein is a substrate measurement apparatus, including a storage configured to store a plurality of substrate measurement recipes, and a processor configured to select one or more substrate measurement recipes from the plurality of substrate measurement recipes based on recipe consistencies among the plurality of substrate measurement recipes.

公开(公告)号：US20210055663A1

公开(公告)日：2021-02-25

申请号：US17081325

申请日：2020-10-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Youping ZHANG ,  Arie Jeffrey DEN BOEF ,  Feng XIAO ,  Martin EBERT

IPC: G03F7/20 ,  G03F9/00

Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.

公开(公告)号：US20190310559A1

公开(公告)日：2019-10-10

申请号：US16376639

申请日：2019-04-05

Applicant: Stichting VU ,  Stichting Nederlandse Wetenschappelijk Onderzoek Instituten ,  Universiteit van Amsterdam ,  ASML Netherlands B.V.

Inventor： Johannes Fitzgerald DE BOER ,  Vasco Tomas TENNER ,  Arie Jeffrey DEN BOEF ,  Christos MESSINIS

IPC: G03F7/20 ,  G01N21/88

Abstract: Methods and apparatus are disclosed for determining a characteristic of a structure. In one arrangement, the structure is illuminated with first illumination radiation to generate first scattered radiation. A first interference pattern is formed by interference between a portion of the first scattered radiation reaching a sensor and first reference radiation. The structure is also illuminated with second illumination radiation from a different direction. A second interference pattern is formed using second reference radiation. The first and second interference patterns are used to determine the characteristic of the structure. Azimuthal angles of the first and second reference radiations onto the sensor are different.

公开(公告)号：US20190049866A1

公开(公告)日：2019-02-14

申请号：US16069678

申请日：2017-01-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Simon Reinald HUISMAN ,  Alessandro POLO ,  Duygu AKBULUT ,  Sebastianus Adrianus GOORDEN ,  Arie Jeffrey DEN BOEF

IPC: G03F9/00 ,  G01B9/02 ,  G01D5/26

Abstract: In an alignment sensor of a lithographic apparatus, position sensing radiation is delivered to a target (P1). After reflection or diffraction from the target, position sensing radiation is processed to determine a position of the target. Reference radiation interferes with the position sensing radiation) while a relative phase modulation is applied between the reference radiation and the position sensing radiation. The interfering radiation includes a time-varying component defined by the applied phase modulation. The interfering radiation is delivered to two photodetectors in such a way that each photodetector receives said time-varying component in anti-phase to that received at the other photodetector. A difference signal (i(t)) from said photodetectors contains an amplified, low noise version of said time-varying component. This is used in determining the position of the target. Mode matching enhances interference. Surface scattered radiation is rejected.

公开(公告)号：US20190025707A1

公开(公告)日：2019-01-24

申请号：US16127296

申请日：2018-09-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

CPC classification number: G03F7/70133 ,  G01N21/4788 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70633

Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

公开(公告)号：US20180356742A1

公开(公告)日：2018-12-13

申请号：US15778517

申请日：2016-10-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Cayetano SANCHEZ-FABRES COBALEDA ,  Franciscus Godefridus Casper BIJNEN ,  Edo Maria HULSEBOS ,  Arie Jeffrey DEN BOEF ,  Marcel Hendrikus Maria BEEMS ,  Piotr Michal STOLARZ

IPC: G03F9/00 ,  G03F7/20

Abstract: A lithographic apparatus has a substrate table on which a substrate is positioned, and an alignment sensor used to measure the alignment of the substrate. In an exemplary processing method, the alignment sensor is used to perform one or more edge measurements in a first step. In a second step, one or more edge measurements are performed on the notch of the substrate. The edge measurements are then used to align the substrate in the lithographic apparatus. In a particular example, the substrate is arranged relative to the alignment sensor such that a portion of the edge surface is positioned at the focal length of the lens. When the alignment sensor detects radiation scattered by the edge surface at the focal length of the lens, the presence of the edge of the substrate is detected.

公开(公告)号：US20180275524A1

公开(公告)日：2018-09-27

申请号：US15913920

申请日：2018-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey DEN BOEF

IPC: G03F7/20 ,  G01B11/26 ,  G01N21/95

CPC classification number: G03F7/70625 ,  G01B11/26 ,  G01N21/9501 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/7065 ,  G03F7/7085

Abstract: A method including obtaining a first value of an optical characteristic determined for an etched profile of a substrate measured at a first wavelength of measurement radiation, obtaining a second value of the optical characteristic determined for the etched profile of the substrate measured at a second wavelength of measurement radiation, and obtaining a derived value that represents a difference between the first and second values; and determining, based on the first and second values or on the derived value, an occurrence of a tilt in the etching to form the etched profile.

公开(公告)号：US20170242343A1

公开(公告)日：2017-08-24

申请号：US15435593

申请日：2017-02-17

Applicant: ASML Netherlands B.V.

Inventor： Nitesh PANDEY ,  Arie Jeffrey DEN BOEF ,  Marinus Johannes Maria VAN DAM

IPC: G03F7/20 ,  G02B5/22 ,  G01N21/47

CPC classification number: G03F7/70191 ,  G01N21/4788 ,  G01N2021/4711 ,  G01N2201/063 ,  G02B5/22 ,  G03F7/70133 ,  G03F7/70616 ,  G03F7/70625

Abstract: A scatterometer performs diffraction based measurements of one or more parameters of a target structure. To make two-color measurements in parallel, the structure is illuminated simultaneously with first radiation (302) having a first wavelength and a first angular distribution and with second radiation (304) having a second wavelength and a second angular distribution. The collection path (CP) includes a segmented wavelength-selective filter (21, 310) arranged to transmit wanted higher order portions of the diffracted first radiation (302X, 302Y) and of the diffracted second radiation (304X, 304Y), while simultaneously blocking zero order portions (302″, 304″) of both the first radiation and second radiation. The illumination path (IP) in one embodiment includes a matching segmented wavelength-selective filter (13, 300), oriented such that a zero order ray passing through the illumination optical system and the collection optical system will be blocked by one of said filters or the other, depending on its wavelength.