Bicycle pedal
    71.
    发明授权

    公开(公告)号:US10710674B2

    公开(公告)日:2020-07-14

    申请号:US13416114

    申请日:2012-03-09

    申请人: Akira Inoue

    发明人: Akira Inoue

    IPC分类号: B62M3/08

    摘要: A bicycle pedal comprises a pedal axle, a main pedal body, a coupling mechanism and a cleat movement restricting member. The main pedal body is rotatably supported on the pedal axle. The coupling mechanism includes a first cleat securing member and a second cleat securing member. The first cleat securing member is configured to be coupled to a front portion of a cleat. The second cleat securing member is configured to be coupled a rear portion of the cleat. The cleat movement restricting member is configured to restrict movement of the cleat in at least one direction between a frontward direction and a rearward direction. The cleat movement restricting member is further configured and arranged relative to the coupling mechanism such that the cleat movement restricting member guides the cleat during a cleat disengagement operation in which the cleat detaches from the coupling mechanism.

    Semiconductor light emitting element
    73.
    发明授权
    Semiconductor light emitting element 有权
    半导体发光元件

    公开(公告)号:US09252330B2

    公开(公告)日:2016-02-02

    申请号:US13813792

    申请日:2011-08-05

    摘要: A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.

    摘要翻译: 根据本发明的半导体发光元件包括:n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50,其被设置用于发光面,并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。

    Voice processing device and method, and program
    74.
    发明授权
    Voice processing device and method, and program 有权
    语音处理装置及方法及程序

    公开(公告)号:US09159334B2

    公开(公告)日:2015-10-13

    申请号:US13416117

    申请日:2012-03-09

    IPC分类号: G10L21/003 G10L21/01

    CPC分类号: G10L21/01

    摘要: A voice processing device includes a voice pitch converting unit that performs a voice pitch converting process with respect to an input voice signal and converts voice pitch of the input voice signal, an error detecting unit that detects an error between the number of samples of an output voice signal, which is expected, and the number of samples of the output voice signal, which is actually output, and a time length control unit that controls adjustment of the time length in such a manner that the time length of the output voice signal is corrected by the amount of the error.

    摘要翻译: 语音处理装置包括语音音调转换单元,其对输入的语音信号执行语音音调转换处理,并转换输入语音信号的语音音调;错误检测单元,其检测输出的样本数之间的误差 预期的语音信号和实际输出的输出语音信号的样本数;以及时间长度控制单元,其以这样的方式控制时间长度的调整,使得输出语音信号的时间长度为 由错误量修正。

    Variable printing control apparatus and control program
    75.
    发明授权
    Variable printing control apparatus and control program 有权
    可变印刷控制装置和控制程序

    公开(公告)号:US08854638B2

    公开(公告)日:2014-10-07

    申请号:US12959815

    申请日:2010-12-03

    IPC分类号: G06F3/12

    摘要: A variable printing control apparatus for creating an image data to be printed, using variable printing data containing a plurality of page data in which one of a plurality of parts is arranged in one page, the variable printing control apparatus being configured to implement: a first processing method for rasterizing the plurality of page data, extracting the plurality of parts from each of pieces of raster data, and superimposing the plurality of parts of raster data to create the image data; and a second processing method for converting the plurality of page data into PDL data, extracting the plurality of parts from each of pieces of PDL data, superimposing the plurality of parts of PDL data, and rasterizing the superimposed PDL data to create the image data.

    摘要翻译: 一种可变打印控制装置,用于通过使用包含多个部分中的一个页面的多个页面数据的可变打印数据来创建要打印的图像数据,所述可变打印控制装置被配置为实现:第一 用于光栅化所述多个页面数据的处理方法,从每个光栅数据中提取所述多个部分,以及叠加所述多个光栅数据部分以创建所述图像数据; 以及第二处理方法,用于将多个页面数据转换成PDL数据,从PDL数据中的每一个提取多个部分,叠加PDL数据的多个部分,以及光栅化叠加的PDL数据以创建图像数据。

    Nitride semiconductor light-emitting element and manufacturing method therefor
    76.
    发明授权
    Nitride semiconductor light-emitting element and manufacturing method therefor 有权
    氮化物半导体发光元件及其制造方法

    公开(公告)号:US08823026B2

    公开(公告)日:2014-09-02

    申请号:US13880027

    申请日:2012-05-02

    CPC分类号: H01L33/32 H01L33/02 H01L33/16

    摘要: A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10−4≦D≦14.1×10−4. The area of the p-side electrode, S, is in the range of 1×102 μm2≦S≦9×104 μm2. A maximum current density which leads to 88% of a maximum of the external quantum efficiency is not less than 2 A/mm2.

    摘要翻译: 实施方式的氮化物系半导体发光元件具有半导体层叠结构,该半导体层叠结构具有作为m面的生长面并由GaN系半导体构成。 半导体多层结构包括n型半导体层,p型半导体层,设置在p型半导体层上的p侧电极以及介于n型半导体层和p型半导体层之间的有源层 半导体层。 有源层的厚度与n型半导体层的厚度D的比值在1.8×10-4< 1lE; D≦̸ 14.1×10-4的范围内。 p侧电极S的面积在1×102μm2& NlE; S&NlE; 9×104μm2的范围内。 导致外部量子效率最大值的88%的最大电流密度不小于2A / mm2。

    SIGNAL PROCESSING APPARATUS AND METHOD, SIGNAL PROCESSING SYSTEM, AND PROGRAM
    77.
    发明申请
    SIGNAL PROCESSING APPARATUS AND METHOD, SIGNAL PROCESSING SYSTEM, AND PROGRAM 审中-公开
    信号处理装置和方法,信号处理系统和程序

    公开(公告)号:US20140174280A1

    公开(公告)日:2014-06-26

    申请号:US14236435

    申请日:2012-08-01

    IPC分类号: G10K15/04

    摘要: A signal processing apparatus and method, a signal processing system, and a program designed to appropriately set harmonizing periods in accordance with a status of singing of a performer and add a harmonizing voice. A singing enthusiasm calculating unit calculates a degree of singing enthusiasm formed with a feature quantity indicating the status of singing enthusiasm of a performer of a tune. A harmonizing signal controlling unit determines whether to superimpose a harmonizing voice signal generated by a pitch detecting unit, a harmonizing key determining unit, and a pitch shifter on the singing voice signal of the performer of the tune based on the degree of singing enthusiasm calculated by the singing enthusiasm calculating unit, and superimposes the harmonizing voice signal on the singing voice signal based on a result of the determination. The technique can be applied to karaoke machines.

    摘要翻译: 一种信号处理装置和方法,信号处理系统和程序,被设计为根据表演者的歌唱状态适当地设定协调周期并添加协调语音。 唱歌热情计算单元计算表示曲调表演者的歌唱热情的特征量形成的歌唱热情度。 协调信号控制单元基于由音调检测单元,协调键确定单元和音调移位器产生的协调声音信号,基于由歌曲激励程度由歌曲激励程度 歌唱热情计算单元,并且基于确定的结果将歌曲声音信号上的协调语音信号叠加起来。 该技术可应用于卡拉OK机。

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    79.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
    半导体发光元件

    公开(公告)号:US20130126901A1

    公开(公告)日:2013-05-23

    申请号:US13813777

    申请日:2011-08-05

    IPC分类号: H01L33/32

    摘要: A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n- and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of −80 degrees to −5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer.

    摘要翻译: 根据本发明的半导体发光元件包括:n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型和p型氮化物半导体层之间的有源层区22。 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50,其被设置用于发光面,并且具有多个突起,该多个突起在限定5度至80度的角度或-80度至-5度的角度的方向上延伸,相对于 相对于m面氮化物半导体层的a轴方向。

    METHOD FOR MEASURING MECHANICAL POWER DISSIPATION IN A VIBRATORY SYSTEM
    80.
    发明申请
    METHOD FOR MEASURING MECHANICAL POWER DISSIPATION IN A VIBRATORY SYSTEM 有权
    用于测量振动系统中的机械功率消耗的方法

    公开(公告)号:US20120247177A1

    公开(公告)日:2012-10-04

    申请号:US13076943

    申请日:2011-03-31

    申请人: Akira Inoue

    发明人: Akira Inoue

    IPC分类号: G01M17/04

    CPC分类号: G01M15/12 G01H3/10 G01M7/00

    摘要: A method for determining mechanical power dissipation in a vibratory system, assuming the system is linear time-invariant and steady-state. The method includes the steps of identifying connection points between the vibratory system and components outside the vibratory system. The acceleration is measured at each connection point in a windowed time domain and the force at each connection point is also determined for the windowed time domain. The time domain values are converted into the frequency domain values by the fast Fourier transform, and the frequency domain acceleration values are converted to velocity values. The power dissipation of the vibratory system then equals the summation of one half of the power flow into the vibratory system. Here, each power flow is one half of the real part of the product of complex-conjugated velocity times force at the connection point in the frequency domain for each time window.

    摘要翻译: 一种用于确定振动系统中机械功率耗散的方法,假设系统是线性时不变和稳态。 该方法包括识别振动系统和振动系统之外的部件之间的连接点的步骤。 加速度是在窗口化的时域中的每个连接点处测量的,并且每个连接点的力也是为窗口时域确定的。 通过快速傅里叶变换将时域值转换为频域值,将频域加速度值转换为速度值。 振动系统的功率损耗等于进入振动系统的功率流的一半的总和。 这里,每个功率流是在每个时间窗口的频域中的连接点处的复共轭速度乘以力的乘积的实部的一半。