摘要:
A bicycle pedal comprises a pedal axle, a main pedal body, a coupling mechanism and a cleat movement restricting member. The main pedal body is rotatably supported on the pedal axle. The coupling mechanism includes a first cleat securing member and a second cleat securing member. The first cleat securing member is configured to be coupled to a front portion of a cleat. The second cleat securing member is configured to be coupled a rear portion of the cleat. The cleat movement restricting member is configured to restrict movement of the cleat in at least one direction between a frontward direction and a rearward direction. The cleat movement restricting member is further configured and arranged relative to the coupling mechanism such that the cleat movement restricting member guides the cleat during a cleat disengagement operation in which the cleat detaches from the coupling mechanism.
摘要:
A secondary battery state management system of the present invention includes: a battery charger that charges a secondary battery; and a storage server that stores electrical characteristics information which is information that indicates the electrical characteristics during charging of the secondary battery. An electrical characteristics measuring means measures the electrical characteristics during charging. A measurement information storing means stores the history of the measured electrical characteristics information for each secondary battery. A battery state determining means compares the electrical characteristics information of the secondary battery being measured by the electrical characteristics measuring means with the electrical characteristics information of the same secondary battery stored in the measurement information storing means, and determines the state of the secondary battery.
摘要:
A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
摘要:
A voice processing device includes a voice pitch converting unit that performs a voice pitch converting process with respect to an input voice signal and converts voice pitch of the input voice signal, an error detecting unit that detects an error between the number of samples of an output voice signal, which is expected, and the number of samples of the output voice signal, which is actually output, and a time length control unit that controls adjustment of the time length in such a manner that the time length of the output voice signal is corrected by the amount of the error.
摘要:
A variable printing control apparatus for creating an image data to be printed, using variable printing data containing a plurality of page data in which one of a plurality of parts is arranged in one page, the variable printing control apparatus being configured to implement: a first processing method for rasterizing the plurality of page data, extracting the plurality of parts from each of pieces of raster data, and superimposing the plurality of parts of raster data to create the image data; and a second processing method for converting the plurality of page data into PDL data, extracting the plurality of parts from each of pieces of PDL data, superimposing the plurality of parts of PDL data, and rasterizing the superimposed PDL data to create the image data.
摘要:
A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10−4≦D≦14.1×10−4. The area of the p-side electrode, S, is in the range of 1×102 μm2≦S≦9×104 μm2. A maximum current density which leads to 88% of a maximum of the external quantum efficiency is not less than 2 A/mm2.
摘要:
A signal processing apparatus and method, a signal processing system, and a program designed to appropriately set harmonizing periods in accordance with a status of singing of a performer and add a harmonizing voice. A singing enthusiasm calculating unit calculates a degree of singing enthusiasm formed with a feature quantity indicating the status of singing enthusiasm of a performer of a tune. A harmonizing signal controlling unit determines whether to superimpose a harmonizing voice signal generated by a pitch detecting unit, a harmonizing key determining unit, and a pitch shifter on the singing voice signal of the performer of the tune based on the degree of singing enthusiasm calculated by the singing enthusiasm calculating unit, and superimposes the harmonizing voice signal on the singing voice signal based on a result of the determination. The technique can be applied to karaoke machines.
摘要:
A multiple power mode amplifier includes: N amplifiers connected in series via switches; and a control circuit for controlling the N amplifiers in accordance with the output modes. P amplifiers out of the N amplifiers constitute a driver amplifier, and constitute a negative feedback amplifier including a feedback circuit for negatively feeding back its own output signal to its own input side. N−P amplifiers constitute a final stage amplifier connected in series to the negative feedback amplifier in a disconnectable manner. The control circuit is configured to: in a first output mode, disconnect the final stage amplifier from the negative feedback amplifier, and disable the feedback circuit; and in a second output mode, connect the final stage amplifier in series to the negative feedback amplifier, and enable the feedback circuit.
摘要:
A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n- and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of −80 degrees to −5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer.
摘要:
A method for determining mechanical power dissipation in a vibratory system, assuming the system is linear time-invariant and steady-state. The method includes the steps of identifying connection points between the vibratory system and components outside the vibratory system. The acceleration is measured at each connection point in a windowed time domain and the force at each connection point is also determined for the windowed time domain. The time domain values are converted into the frequency domain values by the fast Fourier transform, and the frequency domain acceleration values are converted to velocity values. The power dissipation of the vibratory system then equals the summation of one half of the power flow into the vibratory system. Here, each power flow is one half of the real part of the product of complex-conjugated velocity times force at the connection point in the frequency domain for each time window.