摘要:
A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in carrier material such as silicon by an anisotropic etching process and topped with a reflective layer such as Mo metal, Ru metal, TiN or RuO. A diffusion barrier layer such as silicon nitride Si3N4, or silicon dioxide SiO2 is provided between the metal and the semiconductor to prevent diffusion and silicidation of the metal at elevated temperatures. The diffusion barrier layer may also serve as a hydrogen-resistant layer on parts of the semiconductor which are not beneath the reflective layer, and/or enhance emissivity for removal of heat from the structure.
摘要翻译:透射光谱纯度滤光器被配置为透射极紫外辐射。 光谱纯度滤光器包括具有多个孔以便透射极紫外辐射并抑制第二类辐射的透射的滤光器部分。 孔可以通过各向异性蚀刻工艺在诸如硅的载体材料中制成,并且覆盖有诸如Mo金属,Ru金属,TiN或RuO的反射层。 在金属和半导体之间设置有诸如氮化硅Si 3 N 4或二氧化硅SiO 2的扩散阻挡层,以防止金属在升高的温度下扩散和硅化。 扩散阻挡层还可以在半导体的不在反射层下面的部分上用作耐氢层,和/或增加用于从结构去除热量的发射率。
摘要:
A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from a material having a bulk reflectance of substantially greater than or equal to 70% at the first wavelength of radiation. The material has a melting point above 1000° C.
摘要:
A spectral purity filter is configured to allow transmission therethrough of extreme ultraviolet (EUV) radiation and to refract or reflect non-EUV secondary radiation. The spectral purity filter may be part of a source module and/or a lithographic apparatus.
摘要:
A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from a material having a bulk reflectance of substantially greater than or equal to 70% at the first wavelength of radiation. The material has a melting point above 1000° C.
摘要:
A system for removing contaminant particles from the path of the beam of EUV radiation is provided in which at least a first AC voltage is provided to a pair of electrodes on opposite sides of the path of the beam of EUV radiation as a first stage of a regime of voltages and, as a second stage of the regime of voltages, a DC voltage is provided to the electrodes.
摘要:
A reflector includes a multi layer mirror structure configured to reflect radiation at a first wavelength, and one or more additional layers. The absorbance and refractive index at a second wavelength of the multi layer mirror structure and the one or more additional layers, and the thickness of the multi layer mirror structure and the one or more additional layers, are configured such that radiation of the second wavelength which is reflected from a surface of the reflector interferes in a destructive manner with radiation of the second wavelength which is reflected from within the reflector.
摘要:
A spectral purity filter, in particular for use in a lithographic apparatus using EUV radiation for the projection beam, includes a plurality of apertures in a substrate. The apertures are defined by walls having side surfaces that are inclined to the normal to a front surface of the substrate.
摘要:
An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.
摘要:
A radiation source is configured to generate extreme ultraviolet radiation. The radiation source includes a plasma formation site located at a position in which a fuel will be contacted by a beam of radiation to form a plasma, an outlet configured to allow gas to exit the radiation source, and a contamination trap at least partially located inside the outlet. The contamination trap is configured to trap debris particles that are generated with the formation of the plasma.