公开(公告)号：US06287925B1

公开(公告)日：2001-09-11

申请号：US09512202

申请日：2000-02-24

Applicant: Bin Yu

Inventor： Bin Yu

IPC: H01L21336

CPC classification number: H01L29/6659 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656

Abstract: For forming a highly conductive junction in an active device area of a semiconductor substrate, a first dopant is implanted into the active device area to form a preamorphization region. A second dopant is then implanted into the preamorphization region to have a dopant profile along a depth of the preamorphization region, and the dopant profile has a dopant peak within the preamorphization region. A RTA (Rapid Thermal Anneal) is performed to recrystallize a portion of the preamorphization region from an interface between the preamorphization region and the semiconductor substrate to below the dopant peak. A LTP (Laser Thermal Process) is then performed to recrystallize a remaining portion of the preamorphization region that has not been recrystallized during the RTA (Rapid Thermal Anneal) to activate a substantial portion of the second dopant in the preamorphization region. In this manner, a relatively small portion of junction at the interface of the junction with the semiconductor substrate is recrystallized using a RTA (Rapid Thermal Anneal) process before the LTP (Laser Thermal Process). The interface of the junction with the semiconductor substrate that is recrystallized using a RTA (Rapid Thermal Anneal) has a minimized amount of crystallization defects such that the resistance of the junction is minimized. Such a highly conductive junction may be formed as a drain extension, a source extension, a drain contact junction, and a source contact junction of a field effect transistor for minimizing the series resistance at the drain and source of the field effect transistor and thus for enhancing the speed performance of the field effect transistor.

Abstract translation: 为了在半导体衬底的有源器件区域中形成高导电结，将第一掺杂剂注入有源器件区域以形成预变形区域。 然后将第二掺杂剂注入到预变质区域中以沿着预变质区域的深度具有掺杂剂分布，并且掺杂剂分布在预变形区域内具有掺杂剂峰。 进行RTA（快速热退火）以使前变质区域的一部分从前变质区域和半导体衬底之间的界面重结晶到掺杂剂峰值以下。 然后进行LTP（激光热处理）以使在RTA（快速热退火）期间未重结晶的剩余部分再结晶，以激活前变质区域中的大部分第二掺杂剂。 以这种方式，在LTP（激光热处理）之前，使用RTA（快速热退火）工艺在与半导体衬底的结的界面处的相交处相对小的部分进行再结晶。 使用RTA（快速热退火）重结晶的与半导体衬底的结的界面具有最小量的结晶缺陷，使得结的电阻最小化。 这种高导电结可以形成为场效应晶体管的漏极延伸，源极延伸，漏极接触结和源极接触结，用于使场效应晶体管的漏极和源极处的串联电阻最小化， 提高了场效应晶体管的速度性能。

公开(公告)号：US06284672B1

公开(公告)日：2001-09-04

申请号：US09260255

申请日：1999-03-02

Applicant: Bin Yu

Inventor： Bin Yu

IPC: H01L21302

CPC classification number: H01L29/6659 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/306

Abstract: A method of manufacturing an integrated circuit is disclosed herein. The method includes providing an implant in a semiconductor to create an amorphous region; growing a thermal oxide layer on the amorphous region such that the thermal oxide layer consumes a portion of the amorphous region; and removing the thermal oxide layer such that the resulting amorphous region is super-shallow.

Abstract translation: 本文公开了一种制造集成电路的方法。 该方法包括在半导体中提供植入物以产生非晶区域; 在非晶区域上生长热氧化物层，使得热氧化物层消耗非晶区域的一部分; 并且去除热氧化物层，使得所得到的非晶区域是超浅的。

公开(公告)号：US06274469B1

公开(公告)日：2001-08-14

申请号：US09490805

申请日：2000-01-26

Applicant: Bin Yu

Inventor： Bin Yu

IPC: H01L21338

CPC classification number: H01L29/66583 ,  H01L21/0337 ,  H01L21/28123 ,  H01L29/6659

Abstract: A method of fabricating an integrated circuit with a gate structure comprised of an oxide/polysilicon/metal stack. The method includes forming the gate structure by using a metal plug as a hard mask in place of a hard mask produced using photolithography. Thus, linewidth limitations of conventional photolithography do not apply. Specifically, the method includes providing a pattern over a semiconductor substrate; partially filling the pattern with a polysilicon material such that a trench is left in the polysilicon material, and filling the trench in the polysilicon material with metal to form a plug. After forming the materials, excess materials are removed leaving the gate structure.

Abstract translation: 一种制造具有由氧化物/多晶硅/金属堆叠构成的栅极结构的集成电路的方法。 该方法包括通过使用金属塞作为硬掩模来代替使用光刻产生的硬掩模来形成栅极结构。 因此，常规光刻的线宽限制不适用。 具体地，该方法包括在半导体衬底上提供图案; 部分地用多晶硅材料填充图案，使得沟槽留在多晶硅材料中，并用金属填充多晶硅材料中的沟槽以形成插头。 在形成材料之后，去除留下栅极结构的多余材料。

公开(公告)号：US06255175B1

公开(公告)日：2001-07-03

申请号：US09479552

申请日：2000-01-07

Applicant: Bin Yu

Inventor： Bin Yu

IPC: H01L21336

CPC classification number: H01L21/28052 ,  H01L21/26586 ,  H01L21/28105 ,  H01L29/4966 ,  H01L29/665 ,  H01L29/6659 ,  Y10S977/707

Abstract: A field effect transistor is fabricated to have a drain overlap and a source overlap to minimize series resistance between the gate and the drain and between the gate and the source of the field effect transistor. The parasitic Miller capacitance formed by the drain overlap and the source overlap is reduced by forming a depletion region at the sidewalls of the gate structure of the field effect transistor. The depletion region at the sidewalls of the gate structure is formed by counter-doping the sidewalls of the gate structure. The sidewalls of the gate structure at the drain side and the source side of the field effect transistor are doped with a type of dopant that is opposite to the type of dopant within the gate structure. Such dopant at the sidewalls of the gate structure forms a respective depletion region from the sidewall into approximately the edge of the drain overlap and source overlap that extends under the gate structure to reduce the parasitic Miller capacitance formed by the drain overlap and the source overlap.

Abstract translation: 制造场效应晶体管以具有漏极重叠和源重叠，以使栅极和漏极之间以及场效应晶体管的栅极和源极之间的串联电阻最小化。 通过在场效应晶体管的栅极结构的侧壁处形成耗尽区，减少由漏极重叠和源极重叠形成的寄生米勒电容。 通过对栅极结构的侧壁进行反掺杂来形成栅极结构的侧壁处的耗尽区。 在场效应晶体管的漏极侧和源极侧的栅极结构的侧壁掺杂有与栅极结构内的掺杂剂类型相反的掺杂剂。 在栅极结构的侧壁处的这种掺杂剂从侧壁形成相应的耗尽区，从而在栅极结构下延伸的漏极重叠和源极重叠的大致边缘，以减小由漏极重叠和源极重叠形成的寄生米勒电容。

公开(公告)号：US06251757B1

公开(公告)日：2001-06-26

申请号：US09512201

申请日：2000-02-24

Applicant: Bin Yu

Inventor： Bin Yu

IPC: H01L21425

CPC classification number: H01L29/6659 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/324

Abstract: In a method for fabricating a highly activated shallow abrupt doped junction in a semiconductor substrate, a first dopant is implanted into a predetermined surface of the semiconductor substrate to form a preamorphization junction having a first predetermined depth from the predetermined surface of the semiconductor substrate. Furthermore, a second dopant is implanted into the preamorphization junction with a dopant profile along a depth of the semiconductor substrate from the predetermined surface of the semiconductor substrate. A peak of the dopant profile is located at a fraction of the first predetermined depth of the preamorphization junction. A silicidation RTA (Rapid Thermal Anneal) is performed to form silicide on the semiconductor substrate. The silicidation RTA (Rapid Thermal Anneal) recrystallizes the preamorphization junction from the first predetermined depth of the preamorphization junction up to an unrecrystallized depth of the preamorphization junction. The unrecrystallized depth of the preamorphization junction does not reach up to the peak of the dopant profile. An additional RTA (Rapid Thermal Anneal) is performed to recrystallize the preamorphization junction from the unrecrystallized depth of the preamorphization junction substantially up to the predetermined surface of the semiconductor substrate. The highly activated shallow abrupt doped junction is formed by activation of a substantial portion of the second dopant in the preamorphization junction during the additional RTA (Rapid Thermal Anneal).

Abstract translation: 在半导体衬底中制造高激活浅突变掺杂结的方法中，将第一掺杂剂注入到半导体衬底的预定表面中以形成从半导体衬底的预定表面具有第一预定深度的预变形结。 此外，第二掺杂剂从半导体衬底的预定表面沿着半导体衬底的深度注入到具有掺杂剂分布的前变质结内。 掺杂剂分布的峰位于预变形结的第一预定深度的一部分。 进行硅化RTA（快速热退火）以在半导体衬底上形成硅化物。 硅化RTA（快速热退火）使从前变质结的第一预定深度到预变形结的未再结晶深度的预变形结重结晶。 预变形结的未再结晶深度未达到掺杂剂分布的峰值。 进行另外的RTA（快速热退火）以使从前变质结的未再结晶深度基本上直到半导体衬底的预定表面重结晶前变质结。 在额外的RTA（快速热退火）期间，通过在预变形结中活化大部分第二掺杂剂来形成高活化的浅突变掺杂结。

公开(公告)号：US06245618B1

公开(公告)日：2001-06-12

申请号：US09243487

申请日：1999-02-03

Applicant: Judy X. An ,  Bin Yu

Inventor： Judy X. An ,  Bin Yu

IPC: H01L21336

CPC classification number: H01L29/66537 ,  H01L21/26506 ,  H01L29/0649 ,  H01L29/1083 ,  H01L29/66545

Abstract: A semiconductor device with improved short channel characteristics is formed with a buried amorphous region comprising a retrograde impurity region having the impurity concentration peak of the semiconductor substrate. The buried amorphous region, formed below the channel region, suppresses diffusion of displaced atoms and holes from the source/drain regions and reduces the resistance against latch-up phenomenon, thereby improving short channel characteristics.

Abstract translation: 具有改善的短沟道特性的半导体器件形成有包括具有半导体衬底的杂质浓度峰的逆向杂质区的埋入非晶区。 形成在沟道区下方的埋入非晶区域抑制了位移原子和空穴从源极/漏极区的扩散，并降低了对闭锁现象的抵抗力，从而改善了短沟道特性。

公开(公告)号：US06235599B1

公开(公告)日：2001-05-22

申请号：US09426402

申请日：1999-10-25

Applicant: Bin Yu

Inventor： Bin Yu

IPC: H01L21336

CPC classification number: H01L21/26513 ,  H01L21/26506 ,  H01L29/6659

Abstract: A shallow doped junction that is part of an integrated circuit device within a semiconductor substrate is formed with box-shaped implant profiles for implantation of the amorphizing implant species and the dopant implant species such that the doped junction has minimized sheet resistance. A box-shaped implant profile for implantation of the amorphizing implant species is formed from implantation of the amorphizing implant species with a plurality of projection ranges to form a plurality of implant profiles. A box-shaped implant profile for implantation of the dopant implant species is formed from implantation of the dopant implant species with a plurality of projection ranges to form a plurality of implant profiles. In addition, each of the plurality of implant profiles for the dopant implant species is preferably below the solid solubility of the dopant implant species within the semiconductor substrate. By controlling the implant profiles of the amorphizing implant species and the dopant implant species during fabrication of the doped junction, the sheet resistance of the doped junction is minimized. In addition, the temperature and the time period for activating the dopant implant species in a RTA (Rapid Thermal Anneal) process is also minimized such that the doped junction remains relatively shallow.

Abstract translation: 作为半导体衬底内的集成电路器件的一部分的浅掺杂结形成有用于注入非晶化注入物种和掺杂剂注入物种的盒形注入轮廓，使得掺杂结具有最小的薄层电阻。 用于植入非晶化植入物种的盒形植入物轮廓通过用多个投影范围的植入非晶化植入物种形成，以形成多个植入物轮廓。 通过用多个投影范围注入掺杂剂注入物种来形成用于注入掺杂剂注入种类的盒状植入物轮廓，以形成多个植入物轮廓。 此外，用于掺杂剂注入物种的多个植入物轮廓中的每一个优选低于半导体衬底内的掺杂剂注入种类的固体溶解度。 通过在掺杂结的制造过程中控制非晶化注入物种和掺杂剂注入物种的种植体轮廓，掺杂结的薄层电阻最小化。 此外，在RTA（快速热退火）工艺中激活掺杂剂注入物质的温度和时间段也被最小化，使得掺杂的结保持相对较浅。

公开(公告)号：US06225661B1

公开(公告)日：2001-05-01

申请号：US09145786

申请日：1998-09-02

Applicant: Judy Xilin An ,  Bin Yu ,  Ming-Ren Lin

Inventor： Judy Xilin An ,  Bin Yu ,  Ming-Ren Lin

IPC: H01L27088

CPC classification number: H01L21/28194 ,  H01L29/42368 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66545 ,  H01L2924/0002 ,  Y10S257/90 ,  Y10S438/981 ,  H01L2924/00

Abstract: A field effect transistor (FET) is formed on a silicon substrate, with a nitride gate insulator layer being deposited on the substrate and an oxide gate insulator layer being deposited on the nitride layer to insulate a gate electrode from source and drain regions in the substrate. The gate material is then removed to establish a gate void, and spacers are deposited on the sides of the void such that only a portion of the oxide layer is covered by the spacers. Then, the unshielded portion of the oxide layer is removed, thus establishing a step between the oxide and nitride layers that overlays the source and drain extensions under the gate void to reduce subsequent capacitive coupling and charge carrier tunneling between the gate and the extensions. The spacers are removed and the gate void is refilled with gate electrode material.

Abstract translation: 在硅衬底上形成场效应晶体管（FET），其中氮化物栅极绝缘体层沉积在衬底上，并且氧化物栅极绝缘体层沉积在氮化物层上以使栅电极与衬底中的源极和漏极区域绝缘 。 然后去除栅极材料以建立栅极空隙，并且间隔物沉积在空隙的侧面上，使得只有一部分氧化物层被间隔物覆盖。 然后，去除氧化物层的非屏蔽部分，从而在栅极空隙下的源极和漏极延伸层之间建立氧化物层和氮化物层之间的步骤，以减少栅极和延伸部之间的后续电容耦合和电荷载流子隧道。 去除间隔物，并用栅电极材料重新填充栅极空隙。

公开(公告)号：US06225173B1

公开(公告)日：2001-05-01

申请号：US09187172

申请日：1998-11-06

Applicant: Bin Yu

Inventor： Bin Yu

IPC: H01L21336

CPC classification number: H01L29/66621 ,  H01L29/66545 ,  H01L29/7834

Abstract: A method of fabricating an integrated circuit with ultra-shallow source and drain junctions utilizes a damascene process. The substrate is over-etched to form extensions in the source and drain regions. The process can be utilized for P-channel or N-channel metal oxide field semiconductor effect transistors (MOSFETS).

Abstract translation: 制造具有超浅源极和漏极结的集成电路的方法利用镶嵌工艺。 衬底被过蚀刻以在源区和漏区中形成延伸。 该过程可用于P沟道或N沟道金属氧化物半导体效应晶体管（MOSFET）。

公开(公告)号：US06221724B1

公开(公告)日：2001-04-24

申请号：US09187252

申请日：1998-11-06

Applicant: Bin Yu ,  Shekhar Pramanick

Inventor： Bin Yu ,  Shekhar Pramanick

IPC: H01L21336

CPC classification number: H01L29/6659 ,  H01L21/26533 ,  H01L21/2658 ,  H01L29/0638 ,  H01L29/0653 ,  H01L29/1083

Abstract: An integrated circuit and method of fabrication is provided for an integrated circuit having punch-through suppression. Unlike conventional methods of punch-through suppression wherein a dopant implant is fabricated in the device, the present invention utilizes an inert ion implantation process whereby inert ions are implanted through a fabricated gate structure on the semiconductor substrate to form a region of inert ion implant between source and drain regions of a device on the integrated circuit. This accumulation region prevents punch-through between source and drain regions of the device. In a second embodiment, the inert ion implantation is used in conjunction with the conventional punch-through dopant implant. In this second embodiment, diffusion of the implant during subsequent thermal annealing is suppressed by the inert ion accumulation in the subsurface region of the device. Accordingly, improved integrated circuits and methods of fabricating an integrated circuit having punch-through suppression are disclosed.

Abstract translation: 为具有穿通抑制的集成电路提供集成电路和制造方法。 不同于常规的穿透抑制方法，其中在器件中制造掺杂剂注入，本发明利用惰性离子注入工艺，其中惰性离子通过半导体衬底上制造的栅极结构注入，以形成惰性离子注入区域 集成电路上的器件的源极和漏极区域。 该积聚区域防止器件的源极和漏极区域之间穿透。 在第二实施例中，惰性离子注入与常规穿通掺杂剂注入相结合使用。 在该第二实施例中，通过装置的地下区域中的惰性离子累积来抑制随后的热退火期间的植入物的扩散。 因此，公开了改进的集成电路和制造具有穿通抑制的集成电路的方法。