公开(公告)号：US07420188B2

公开(公告)日：2008-09-02

申请号：US11251330

申请日：2005-10-14

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin ,  David Lu

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin ,  David Lu

IPC: G03F7/20

CPC classification number: G03F7/2041 ,  G03F7/70341 ,  G03F7/70941

Abstract: A method for immersion lithography includes providing a substrate coated with an imaging layer, dispensing a conductive immersion fluid between the substrate and an imaging lens of a lithography system, and performing an exposure process to the imaging layer using a radiation energy through the conductive immersion fluid.

Abstract translation: 一种用于浸没式光刻的方法包括提供涂覆有成像层的基底，在基底和光刻系统的成像透镜之间分配导电浸渍流体，以及使用辐射能量通过导电浸渍流体对成像层进行曝光处理 。

公开(公告)号：US20080185021A1

公开(公告)日：2008-08-07

申请号：US11671570

申请日：2007-02-06

Applicant: Chih-Cheng Chiu ,  Ching-Yu Chang

Inventor： Chih-Cheng Chiu ,  Ching-Yu Chang

IPC: B08B3/04

CPC classification number: G03F1/82 ,  Y10S134/902

Abstract: A method for cleaning a photomask includes cleaning the photomask with a chemical cleaner, introducing a solution to the photomask, the solution is configured to react with residuals generated from the chemical cleaner to form insoluble precipitates, and rinsing the photomask with a fluid to remove the insoluble precipitates from the photomask.

Abstract translation: 用于清洁光掩模的方法包括用化学清洁剂清洁光掩模，将溶液引入到光掩模中，溶液被配置为与由化学清洁剂产生的残余物反应以形成不溶性沉淀物，并用流体冲洗光掩模以除去 来自光掩模的不溶性沉淀物。

公开(公告)号：US20080102648A1

公开(公告)日：2008-05-01

申请号：US11555558

申请日：2006-11-01

Applicant: Chin-Hsiang Lin ,  Hsiao-Tzu Lu ,  Kuei Shun Chen ,  Ching-Yu Chang ,  Vencent Chang

Inventor： Chin-Hsiang Lin ,  Hsiao-Tzu Lu ,  Kuei Shun Chen ,  Ching-Yu Chang ,  Vencent Chang

IPC: H01L21/302 ,  G03G13/10

CPC classification number: H01L21/0271 ,  G03F7/095

Abstract: A method of forming a resist pattern in a semiconductor device layer includes forming a buffer layer on a semiconductor device layer and forming a resist layer on the buffer layer. A decomposing agent is released into a portion of the buffer layer by a portion of the resist layer whereupon the portion of the buffer layer and the portion of the resist layer are removed to form a process window substantially free of resist residue that can be subsequently exploited for etching of the semiconductor device layer.

Abstract translation: 在半导体器件层中形成抗蚀剂图案的方法包括在半导体器件层上形成缓冲层，并在缓冲层上形成抗蚀剂层。 分解剂通过抗蚀剂层的一部分释放到缓冲层的一部分中，随后缓冲层的部分和抗蚀剂层的一部分被去除以形成基本上不含抗蚀剂残留物的工艺窗口，其可以被随后利用 用于蚀刻半导体器件层。

公开(公告)号：US07323393B2

公开(公告)日：2008-01-29

申请号：US11715527

申请日：2007-03-07

Applicant: Yu-Lin Yen ,  Ching-Yu Chang

Inventor： Yu-Lin Yen ,  Ching-Yu Chang

IPC: H01L21/76

CPC classification number: G03F9/7003 ,  G03F7/70633 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: An integrated circuit capable of operating despite a profile shift is disclosed. Overlay marks on the integrated circuit are surrounded by a trench that tends to relieve the effect of a profile shift caused by stress applied to the integrated circuit. The position of the overlay marks tends, therefore, not to be affected by the stress.

Abstract translation: 公开了尽管轮廓偏移的能够运行的集成电路。 集成电路上的覆盖标记被沟槽包围，该沟槽倾向于减轻由施加到集成电路的应力引起的轮廓移位的影响。 因此，覆盖标记的位置倾向于不受应力的影响。

公开(公告)号：US07252911B2

公开(公告)日：2007-08-07

申请号：US10810920

申请日：2004-03-26

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F1/00

CPC classification number: G03F1/60 ,  G03F1/40 ,  H01J2237/31794

Abstract: An ESD-resistant photomask and method of preventing mask ESD damage is disclosed. The ESD-resistant photomask includes a mask substrate, a pattern-forming material provided on the substrate, a circuit pattern defined by exposure regions etched in the pattern-forming material, and positive or negative ions implanted into the mask substrate throughout ion implantation regions. The ions in the ion implantation regions dissipate electrostatic charges on the mask, thus preventing the buildup of electrostatic charges which could otherwise attract image-distorting particles to the mask or damage the mask.

Abstract translation: 公开了一种防静电防护光掩模和防止掩膜ESD损伤的方法。 防静电光掩模包括掩模基板，设置在基板上的图案形成材料，由在图案形成材料中蚀刻的曝光区域限定的电路图案，以及在离子注入区域中注入到掩模基板中的正或负离子。 离子注入区域中的离子消耗掩模上的静电电荷，从而防止静电电荷的积累，否则可能会吸引图像变形颗粒到掩模或损坏掩模。

公开(公告)号：US07224427B2

公开(公告)日：2007-05-29

申请号：US10910480

申请日：2004-08-03

Applicant: Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

Inventor： Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

IPC: G03B27/52

CPC classification number: G03F7/70341

Abstract: A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer.An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.

Abstract translation: 公开了一种用于在浸没式光刻中基本上消除曝光液体中的微泡的兆声浸没式光刻曝光装置和方法。 该装置包括用于通过掩模将光投射到晶片上的光学系统。 光学传递室邻近光学系统设置，用于容纳曝光液体。 至少一个兆欧表板可操作地接合光学传递室，用于在曝光液体中引入声波并消除微泡。

公开(公告)号：US20070082275A1

公开(公告)日：2007-04-12

申请号：US11245522

申请日：2005-10-07

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F1/00

CPC classification number: G03F1/36

Abstract: An optical proximity correction photomask comprises a transparent substrate, a main feature having a first transmitivity disposed on the transparent substrate and at least one assist feature having a second transmitivity disposed beside the main feature and on the transparent substrate, wherein the first transmitivity is not equal to the second transmitivity.

Abstract translation: 光学邻近校正光掩模包括透明衬底，具有设置在透明衬底上的第一透射率的主要特征和在主要特征旁边和透明衬底上具有第二透射率的至少一个辅助特征，其中第一透射率不相等 到第二个透射率。

公开(公告)号：US07192845B2

公开(公告)日：2007-03-20

申请号：US10864562

申请日：2004-06-08

Applicant: Yu Lin Yen ,  Ching-Yu Chang

Inventor： Yu Lin Yen ,  Ching-Yu Chang

IPC: H01L21/76 ,  H01L21/78 ,  H01L21/46 ,  H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: An integrated circuit in which measurement of the alignment between subsequent layers has less susceptibility to stress induced shift. A first layer of the structure has a first overlay mark. A second and/or a third layer are formed in the alignment structure and on the first layer. Portions of the second and/or third layer are selectively removed from regions in and around the first overlay mark. A second overlay mark is formed and aligned to the first overlay mark. The alignment between the second overlay mark and first overlay mark may be measured with an attenuated error due to reflection and refraction or due to an edge profile shift of the first overlay mark.

Abstract translation: 一种集成电路，其中后续层之间的对准测量对应力诱导偏移具有较小的敏感性。 该结构的第一层具有第一覆盖标记。 在对准结构中和第一层上形成第二层和/或第三层。 第二层和/或第三层的部分从第一重叠标记中和周围的区域选择性地去除。 形成第二重叠标记并与第一覆盖标记对准。 可以由于反射和折射或由于第一重叠标记的边缘轮廓偏移而具有衰减误差来测量第二覆盖标记和第一覆盖标记之间的对准。

公开(公告)号：US20070020877A1

公开(公告)日：2007-01-25

申请号：US11186360

申请日：2005-07-21

Applicant: Uway Tseng ,  Ching-Yu Chang

Inventor： Uway Tseng ,  Ching-Yu Chang

IPC: H01L21/76

CPC classification number: H01L21/76224

Abstract: A shallow trench isolation structure has a trench formed in a substrate, a silicon oxynitride layer conformally formed on the sidewalls and bottom of the trench, and a high density plasma (HDP) oxide layer substantially filling the trench.

Abstract translation: 浅沟槽隔离结构具有在衬底中形成的沟槽，保形地形成在沟槽的侧壁和底部上的氧氮化硅层和基本上填充沟槽的高密度等离子体（HDP）氧化物层。

公开(公告)号：US20070002296A1

公开(公告)日：2007-01-04

申请号：US11384624

申请日：2006-03-20

Applicant: Ching-Yu Chang ,  Vincent Yu ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Vincent Yu ,  Chin-Hsiang Lin

IPC: G03B27/42

CPC classification number: G03F7/70341

Abstract: A method of performing immersion lithography on a semiconductor substrate includes providing a layer of resist onto a surface of the semiconductor substrate and exposing the resist layer using an immersion lithography exposure system. The immersion lithography exposure system utilizes a fluid during exposure and may be capable of removing some, but not all, of the fluid after exposure. After exposure, a treatment process is used to remove the remaining portion of fluid from the resist layer. After treatment, a post-exposure bake and a development step are used.

Abstract translation: 在半导体衬底上进行浸渍光刻的方法包括在半导体衬底的表面上提供抗蚀剂层并使用浸没光刻曝光系统曝光抗蚀剂层。 浸没式光刻曝光系统在曝光期间利用流体，并且可以在曝光后能够去除一些但不是全部的流体。 曝光后，使用处理工艺从抗蚀剂层中除去剩余部分的流体。 处理后，使用曝光后烘烤和显影步骤。