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    Mask with extended mask clear-out window and method of dummy exposure using the same
    1.
    发明授权
    Mask with extended mask clear-out window and method of dummy exposure using the same 有权
    具有扩展掩模清除窗口的掩模和使用其的伪曝光方法

    公开(公告)号：US06960411B2

    公开(公告)日：2005-11-01

    申请号：US10314959

    申请日：2002-12-10

    Applicant: Yu-Lin Yen ,  Ching-Yu Chang ,  Shun-Li Lin

    Inventor： Yu-Lin Yen ,  Ching-Yu Chang ,  Shun-Li Lin

    IPC: G03F1/00 ,  G03F1/36 ,  H01L21/762 ,  G03F9/00

    CPC classification number: G03F1/36 ,  H01L21/76224

    Abstract: A mask with extended mask window for forming patterns on a semiconductor substrate. The mask includes a main chip array having four sides for forming patterns of a main chip in a semiconductor substrate and a plurality of extended mask windows arranged around the main chip array. A method of dummy exposure using the mask includes providing a semiconductor substrate comprising a nitride layer with a plurality of main chip areas therein, and a plurality of unpatterned areas therein, forming a resist layer on the semiconductor substrate, providing an exposure mask comprising a main chip array and a plurality of extended mask windows, patterning the main chip areas of the semiconductor substrate using the main chip array of the exposure mask, patterning the unpatterned areas of the semiconductor substrate using the windows of the exposure mask, and removing the unexposed portions of the resist layer.

    Abstract translation: 具有用于在半导体衬底上形成图案的扩展掩模窗口的掩模。 掩模包括具有用于形成半导体衬底中的主芯片的图案的四个侧面的主芯片阵列和布置在主芯片阵列周围的多个扩展掩模窗口。 使用掩模的伪曝光方法包括提供包括其中具有多个主芯片区域的氮化物层和其中多个未图案化区域的半导体衬底，在半导体衬底上形成抗蚀剂层，提供包括主体的曝光掩模 芯片阵列和多个扩展掩模窗口，使用曝光掩模的主芯片阵列图案化半导体衬底的主芯片区域，使用曝光掩模的窗口对半导体衬底的未图案化区域进行图案化，以及去除未曝光部分 的抗蚀剂层。

    Method of reducing alignment measurement errors between device layers
    3.
    发明授权
    Method of reducing alignment measurement errors between device layers 有权
    降低器件层之间校准测量误差的方法

    公开(公告)号：US07192845B2

    公开(公告)日：2007-03-20

    申请号：US10864562

    申请日：2004-06-08

    Applicant: Yu Lin Yen ,  Ching-Yu Chang

    Inventor： Yu Lin Yen ,  Ching-Yu Chang

    IPC: H01L21/76 ,  H01L21/78 ,  H01L21/46 ,  H01L23/544

    CPC classification number: H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: An integrated circuit in which measurement of the alignment between subsequent layers has less susceptibility to stress induced shift. A first layer of the structure has a first overlay mark. A second and/or a third layer are formed in the alignment structure and on the first layer. Portions of the second and/or third layer are selectively removed from regions in and around the first overlay mark. A second overlay mark is formed and aligned to the first overlay mark. The alignment between the second overlay mark and first overlay mark may be measured with an attenuated error due to reflection and refraction or due to an edge profile shift of the first overlay mark.

    Abstract translation: 一种集成电路，其中后续层之间的对准测量对应力诱导偏移具有较小的敏感性。 该结构的第一层具有第一覆盖标记。 在对准结构中和第一层上形成第二层和/或第三层。 第二层和/或第三层的部分从第一重叠标记中和周围的区域选择性地去除。 形成第二重叠标记并与第一覆盖标记对准。 可以由于反射和折射或由于第一重叠标记的边缘轮廓偏移而具有衰减误差来测量第二覆盖标记和第一覆盖标记之间的对准。

    Rework process of patterned photo-resist layer
    6.
    发明授权
    Rework process of patterned photo-resist layer 有权
    图案光刻胶层的返工工艺

    公开(公告)号：US07125741B2

    公开(公告)日：2006-10-24

    申请号：US10720735

    申请日：2003-11-24

    Applicant: Yu-Lin Yen ,  Ching-Yu Chang

    Inventor： Yu-Lin Yen ,  Ching-Yu Chang

    IPC: H01L21/00 ,  H01L21/4763 ,  H01L21/44

    CPC classification number: H01L21/0276 ,  H01L21/0332 ,  Y10S438/952

    Abstract: A rework process of patterned photo-resist layer is provided. First, a substrate is provided with a first DARC, a first primer and a first patterned photo-resist layer being sequentially formed thereon. Next, remove the first patterned photo-resist layer and the first primer from the first DARC. After that, form a second DARC on the first DARC; form a second primer on the second DARC. Last, form a second patterned photo-resist layer on the second primer.

    Abstract translation: 提供了图案化光刻胶层的返工工艺。 首先，在衬底上依次形成有第一DARC，第一底漆和第一图案化的光致抗蚀剂层。 接下来，从第一DARC去除第一图案化的光致抗蚀剂层和第一底漆。 之后，在第一个DARC上形成第二个DARC; 在第二个DARC上形成第二个引物。 最后，在第二底漆上形成第二图案的光致抗蚀剂层。

    Sandwich arc structure for preventing metal to contact from shifting
    7.
    发明授权
    Sandwich arc structure for preventing metal to contact from shifting 有权
    三明治弧形结构，防止金属接触转移

    公开(公告)号：US07097921B2

    公开(公告)日：2006-08-29

    申请号：US10446927

    申请日：2003-05-29

    Applicant: Ching-Yu Chang ,  Yu-Lin Yen ,  Chin-Da Su

    Inventor： Ching-Yu Chang ,  Yu-Lin Yen ,  Chin-Da Su

    IPC: B32B18/00

    CPC classification number: C23C28/00 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A sandwich ARC structure for preventing metal to contact from shifting, the sandwich ARC structure comprising a first Ti layer formed on a metal laer and a first TiN layer formed on the first Ti layer. A second Ti layer is formed on the first TiN layer and a second TiN layer is formed on the second Ti layer. Wherein the sandwich ARC structure formed of first Ti/first TiN/second Ti/second TiN will reduces the tress between said metal layer and a dielectric layer formed below the metal layer.

    Abstract translation: 一种用于防止金属接触移动的夹层ARC结构，所述夹层ARC结构包括形成在金属层上的第一Ti层和形成在第一Ti层上的第一TiN层。 在第一TiN层上形成第二Ti层，在第二Ti层上形成第二TiN层。 其中由第一Ti /第一TiN /第二Ti /第二TiN形成的夹层ARC结构将减少所述金属层和形成在金属层下面的电介质层之间的发束。

    Rework process of patterned photo-resist layer
    9.
    发明申请
    Rework process of patterned photo-resist layer 有权
    图案光刻胶层的返工工艺

    公开(公告)号：US20050009345A1

    公开(公告)日：2005-01-13

    申请号：US10720735

    申请日：2003-11-24

    Applicant: Yu-Lin Yen ,  Ching-Yu Chang

    Inventor： Yu-Lin Yen ,  Ching-Yu Chang

    IPC: H01L21/00 ,  H01L21/027 ,  H01L21/033 ,  H01L21/302 ,  H01L21/461

    CPC classification number: H01L21/0276 ,  H01L21/0332 ,  Y10S438/952

    Abstract: A rework process of patterned photo-resist layer is provided. First, a substrate is provided with a first DARC, a first primer and a first patterned photo-resist layer being sequentially formed thereon. Next, remove the first patterned photo-resist layer and the first primer from the first DARC. After that, form a second DARC on the first DARC; form a second primer on the second DARC. Last, form a second patterned photo-resist layer on the second primer.

    Abstract translation: 提供了图案化光刻胶层的返工工艺。 首先，在衬底上依次形成有第一DARC，第一底漆和第一图案化的光致抗蚀剂层。 接下来，从第一DARC去除第一图案化的光致抗蚀剂层和第一底漆。 之后，在第一个DARC上形成第二个DARC; 在第二个DARC上形成第二个引物。 最后，在第二底漆上形成第二图案的光致抗蚀剂层。

    Photosensitive material and method of lithography
    10.
    发明授权
    Photosensitive material and method of lithography 有权
    感光材料和光刻方法

    公开(公告)号：US09213234B2

    公开(公告)日：2015-12-15

    申请号：US13486697

    申请日：2012-06-01

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F7/004 ,  G03F7/11

    CPC classification number: G03F7/16 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11

    Abstract: Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.

    Abstract translation: 感光材料和形成图案的方法，其包括提供可操作以漂浮到由感光材料形成的层的顶部区域的感光材料的组分的组合物。 在一个实例中，感光层包括具有氟原子的第一组分（例如，氟烷基）。 在形成感光层之后，第一部件漂浮到感光层的顶表面。 此后，对感光层进行图案化。

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