公开(公告)号：US08349739B2

公开(公告)日：2013-01-08

申请号：US12546812

申请日：2009-08-25

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/302

CPC classification number: H01L21/31111 ,  H01L21/30604 ,  H01L21/32134

Abstract: The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern.

Abstract translation: 本公开提供了蚀刻基板的方法。 该方法包括在基板上形成抗蚀剂图案; 将蚀刻化学流体施加到所述基底，其中所述蚀刻化学流体包括扩散控制材料; 去除蚀刻化学液体; 并去除抗蚀剂图案。

公开(公告)号：US08323870B2

公开(公告)日：2012-12-04

申请号：US12916759

申请日：2010-11-01

Applicant: Fong-Cheng Lee ,  Ching-Yu Chang

Inventor： Fong-Cheng Lee ,  Ching-Yu Chang

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/0382 ,  G03F7/0392 ,  G03F7/325

Abstract: The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.

Abstract translation: 本公开提供了在光刻图案化工艺中使用的抗蚀剂。 抗蚀剂包括具有多个拉链分子的聚合材料，每个拉链分子包括第一拉链部分和第二拉链部分，其中第一和第二拉链部分各自包括成对地结合在一起的多个拉链分支并且可切割成热能之一 ，辐射能和化学反应。

公开(公告)号：US08304179B2

公开(公告)日：2012-11-06

申请号：US12463501

申请日：2009-05-11

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/40 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/31133 ,  H01L21/31138

Abstract: The present disclosure provides a method for manufacturing a semiconductor device. The method includes coating a photoresist on a substrate. The photoresist is exposed to radiation. The radiation exposed photoresist is baked. The radiation exposed and baked photoresist is developed to create an image pattern. The image pattern is treated with a treating material. An ion implantation process is performed to the substrate and the treated image pattern. The image pattern is stripped from the substrate. A carbon atom ratio of the treating material is less than a carbon atom ratio of the photoresist.

Abstract translation: 本公开提供了一种用于制造半导体器件的方法。 该方法包括在基底上涂覆光致抗蚀剂。 光致抗蚀剂暴露于辐射。 辐射曝光的光致抗蚀剂被烘烤。 辐射曝光和烘烤的光致抗蚀剂被开发以产生图像图案。 用处理材料处理图像图案。 对基板和经处理的图像图案执行离子注入工艺。 图案图案从基板剥离。 处理材料的碳原子比小于光致抗蚀剂的碳原子比。

公开(公告)号：US20120090547A1

公开(公告)日：2012-04-19

申请号：US13337846

申请日：2011-12-27

Applicant: Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

IPC: C23C16/46

CPC classification number: H01L21/0273 ,  B05D1/60 ,  B05D3/02 ,  G03F7/167 ,  H01L21/0276

Abstract: Provided is a system for vapor deposition of a coating material onto a semiconductor substrate. The system includes a chemical supply chamber, a supply nozzle operable to dispense vapor, and a heating element operable to provide heat to a substrate in-situ with the dispensing of vapor. The system may further include reaction chamber(s) and/or mixing chamber(s).

Abstract translation: 提供了一种用于将涂料气相沉积到半导体衬底上的系统。 该系统包括化学品供应室，可操作以分配蒸气的供应喷嘴和可操作以随着蒸汽分配而原位向基板提供热量的加热元件。 该系统可以进一步包括反应室和/或混合室。

公开(公告)号：US08105954B2

公开(公告)日：2012-01-31

申请号：US12254658

申请日：2008-10-20

Applicant: Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

IPC: H01L21/47

CPC classification number: H01L21/0273 ,  B05D1/60 ,  B05D3/02 ,  G03F7/167 ,  H01L21/0276

Abstract: Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material.

Abstract translation: 提供了一种用于将涂料气相沉积到半导体衬底上的方法和系统。 在一个实施例中，沉积光致抗蚀剂。 可以通过气相沉积来进行原位烘烤工艺。 在一个实施例中，在沉积期间改变待沉积到衬底上的材料的化学成分的比例。 因此，可以提供具有梯度化学成分分布的层。 在一个实施例中，可以提供BARC层，其包括提供通过该层的n，k分布的梯度化学分量分布。 可能蒸气沉积的其他材料包括图案冷冻材料。

公开(公告)号：US08048795B2

公开(公告)日：2011-11-01

申请号：US12610282

申请日：2009-10-31

Applicant: Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

Inventor： Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

IPC: H01L21/4763

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  H01L21/76816

Abstract: A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.

Abstract translation: 提供一种制造半导体器件的方法，其包括提供衬底。 材料层形成在衬底上。 聚合物层形成在材料层上。 使用聚合物层的一部分自组装纳米尺寸的特征。 使用纳米尺寸的特征对衬底进行图案化。

公开(公告)号：US20110262871A1

公开(公告)日：2011-10-27

申请号：US13177741

申请日：2011-07-07

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/20

CPC classification number: G02B1/111 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/111

Abstract: Various lithography methods are disclosed herein. In an example, a method includes forming a resist layer over a substrate; forming a coating material layer that includes one of an acid and a chelate compound over the resist layer; and exposing the resist layer and the coating material layer to radiation, wherein during the exposing, the one of the acid and the chelate compound in the coating material layer substantially neutralizes any quencher that diffuses into the coating material layer from the resist layer.

Abstract translation: 本文公开了各种光刻方法。 在一个实例中，一种方法包括在衬底上形成抗蚀剂层; 在抗蚀剂层上形成包含酸和螯合物中的一种的涂料层; 以及将抗蚀剂层和涂层材料层暴露于辐射，其中在曝光期间，涂层材料层中的酸和螯合物之一基本上中和从抗蚀剂层扩散到涂层材料层中的任何猝灭剂。

公开(公告)号：US20110159670A1

公开(公告)日：2011-06-30

申请号：US12649462

申请日：2009-12-30

Applicant: Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L21/265 ,  G03F7/004 ,  G03F7/027 ,  H01L21/302

CPC classification number: G03F7/42 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/40 ,  G03F7/422 ,  G03F7/423 ,  H01L21/30604 ,  H01L21/31133

Abstract: Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.

Abstract translation: 提供一种光致抗蚀剂，其包括具有可破坏的主链的聚合物和不与聚合物结合的光酸产生剂。 此外，提供了制造半导体器件的方法。 该方法包括提供器件衬底。 材料层形成在衬底上。 在材料层上形成光致抗蚀剂材料。 光致抗蚀剂材料具有包括骨架的聚合物。 图案化光致抗蚀剂材料以形成图案化的光致抗蚀剂层。 然后对材料层进行制造工艺，其中图案化的光致抗蚀剂层在制造过程中用作掩模。 此后，以破坏聚合物主链的方式处理图案化的光刻胶层。 然后去除图案化的光致抗蚀剂层。

公开(公告)号：US20110070542A1

公开(公告)日：2011-03-24

申请号：US12562761

申请日：2009-09-18

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03F7/20 ,  G03F7/004

CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/11

Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer

Abstract translation: 公开了用于形成图案的方法和材料层。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包括光酸产生剂和光碱产生剂; 以及暴露所述第二材料层的一个或多个部分

公开(公告)号：US07767984B2

公开(公告)日：2010-08-03

申请号：US12150955

申请日：2008-05-01

Applicant: Burn-Jeng Lin ,  Ching-Yu Chang

Inventor： Burn-Jeng Lin ,  Ching-Yu Chang

IPC: G03F7/00 ,  G21K5/02

CPC classification number: G03F7/40 ,  G03F7/2024

Abstract: A method, tool, and machine for hardening a photoresist image while the photoresist image is immersed in a liquid.

Abstract translation: 一种用于在光致抗蚀剂图像浸入液体中时使光致抗蚀剂图像硬化的方法，工具和机器。