Megasonic immersion lithography exposure apparatus and method
    71.
    发明授权
    Megasonic immersion lithography exposure apparatus and method 有权
    超声波浸没式光刻曝光装置及方法

    公开(公告)号:US07224427B2

    公开(公告)日:2007-05-29

    申请号:US10910480

    申请日:2004-08-03

    CPC classification number: G03F7/70341

    Abstract: A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer.An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.

    Abstract translation: 公开了一种用于在浸没式光刻中基本上消除曝光液体中的微泡的兆声浸没式光刻曝光装置和方法。 该装置包括用于通过掩模将光投射到晶片上的光学系统。 光学传递室邻近光学系统设置,用于容纳曝光液体。 至少一个兆欧表板可操作地接合光学传递室,用于在曝光液体中引入声波并消除微泡。

    Optical proximity correction photomasks
    72.
    发明申请
    Optical proximity correction photomasks 有权
    光学接近校正光掩模

    公开(公告)号:US20070082275A1

    公开(公告)日:2007-04-12

    申请号:US11245522

    申请日:2005-10-07

    Applicant: Ching-Yu Chang

    Inventor: Ching-Yu Chang

    CPC classification number: G03F1/36

    Abstract: An optical proximity correction photomask comprises a transparent substrate, a main feature having a first transmitivity disposed on the transparent substrate and at least one assist feature having a second transmitivity disposed beside the main feature and on the transparent substrate, wherein the first transmitivity is not equal to the second transmitivity.

    Abstract translation: 光学邻近校正光掩模包括透明衬底,具有设置在透明衬底上的第一透射率的主要特征和在主要特征旁边和透明衬底上具有第二透射率的至少一个辅助特征,其中第一透射率不相等 到第二个透射率。

    Method of reducing alignment measurement errors between device layers
    73.
    发明授权
    Method of reducing alignment measurement errors between device layers 有权
    降低器件层之间校准测量误差的方法

    公开(公告)号:US07192845B2

    公开(公告)日:2007-03-20

    申请号:US10864562

    申请日:2004-06-08

    Abstract: An integrated circuit in which measurement of the alignment between subsequent layers has less susceptibility to stress induced shift. A first layer of the structure has a first overlay mark. A second and/or a third layer are formed in the alignment structure and on the first layer. Portions of the second and/or third layer are selectively removed from regions in and around the first overlay mark. A second overlay mark is formed and aligned to the first overlay mark. The alignment between the second overlay mark and first overlay mark may be measured with an attenuated error due to reflection and refraction or due to an edge profile shift of the first overlay mark.

    Abstract translation: 一种集成电路,其中后续层之间的对准测量对应力诱导偏移具有较小的敏感性。 该结构的第一层具有第一覆盖标记。 在对准结构中和第一层上形成第二层和/或第三层。 第二层和/或第三层的部分从第一重叠标记中和周围的区域选择性地去除。 形成第二重叠标记并与第一覆盖标记对准。 可以由于反射和折射或由于第一重叠标记的边缘轮廓偏移而具有衰减误差来测量第二覆盖标记和第一覆盖标记之间的对准。

    Shallow trench isolation structure and method of fabricating the same
    74.
    发明申请
    Shallow trench isolation structure and method of fabricating the same 审中-公开
    浅沟槽隔离结构及其制造方法

    公开(公告)号:US20070020877A1

    公开(公告)日:2007-01-25

    申请号:US11186360

    申请日:2005-07-21

    CPC classification number: H01L21/76224

    Abstract: A shallow trench isolation structure has a trench formed in a substrate, a silicon oxynitride layer conformally formed on the sidewalls and bottom of the trench, and a high density plasma (HDP) oxide layer substantially filling the trench.

    Abstract translation: 浅沟槽隔离结构具有在衬底中形成的沟槽,保形地形成在沟槽的侧壁和底部上的氧氮化硅层和基本上填充沟槽的高密度等离子体(HDP)氧化物层。

    Immersion lithography defect reduction
    75.
    发明申请
    Immersion lithography defect reduction 审中-公开
    浸没光刻缺陷减少

    公开(公告)号:US20070002296A1

    公开(公告)日:2007-01-04

    申请号:US11384624

    申请日:2006-03-20

    CPC classification number: G03F7/70341

    Abstract: A method of performing immersion lithography on a semiconductor substrate includes providing a layer of resist onto a surface of the semiconductor substrate and exposing the resist layer using an immersion lithography exposure system. The immersion lithography exposure system utilizes a fluid during exposure and may be capable of removing some, but not all, of the fluid after exposure. After exposure, a treatment process is used to remove the remaining portion of fluid from the resist layer. After treatment, a post-exposure bake and a development step are used.

    Abstract translation: 在半导体衬底上进行浸渍光刻的方法包括在半导体衬底的表面上提供抗蚀剂层并使用浸没光刻曝光系统曝光抗蚀剂层。 浸没式光刻曝光系统在曝光期间利用流体,并且可以在曝光后能够去除一些但不是全部的流体。 曝光后,使用处理工艺从抗蚀剂层中除去剩余部分的流体。 处理后,使用曝光后烘烤和显影步骤。

    Photolithography process and photomask structure implemented in a photolithography process
    76.
    发明申请
    Photolithography process and photomask structure implemented in a photolithography process 有权
    在光刻工艺中实现的光刻工艺和光掩模结构

    公开(公告)号:US20050136338A1

    公开(公告)日:2005-06-23

    申请号:US10894924

    申请日:2004-07-20

    Applicant: Ching-Yu Chang

    Inventor: Ching-Yu Chang

    CPC classification number: G03F7/70441 G03F1/36

    Abstract: In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.

    Abstract translation: 在光刻工艺中,在基板上形成光致抗蚀剂层。 光掩模在衬底上对准以传输在衬底上的光掩模中限定的图案图像。 光掩模包括不同透光率的第一和第二图案,以及围绕第二图案的虚拟图案,其透光率低于第一图案的透光率。 将基板暴露于通过光掩模的光辐射。 然后将光致抗蚀剂层显影以形成图案图像。 虚拟图案被尺寸地构造成允许光透射,但是基本上是这样的,使得在曝光期间伪图案不被成像。

    [OVERLAY MARK AND METHOD OF FABRICATING THE SAME]

    公开(公告)号:US20050074945A1

    公开(公告)日:2005-04-07

    申请号:US10710637

    申请日:2004-07-27

    Applicant: Ching-Yu Chang

    Inventor: Ching-Yu Chang

    Abstract: A method of forming an overlay mark is provided. A first material layer is formed on a substrate, and then a first trench serving as a trench type outer mark is formed in the first material layer. The first trench is partially filled with the first deposition layer. A second material is formed over the first trench and the first deposition layer. A second trench is formed exposing the first deposition layer within the first trench. The second trench is partially filled with a second deposition layer forming a third trench. A third material layer is formed on the substrate to cover the second deposition layer and the second material layer. A step height is formed on the third deposition layer between the edge of the first trench and the center of the first trench. A raised feature serving as an inner mark is formed on the third deposition layer.

    Abstract translation: 提供了一种形成覆盖标记的方法。 在基板上形成第一材料层,然后在第一材料层中形成用作沟槽型外标的第一沟槽。 第一沟槽部分地填充有第一沉积层。 在第一沟槽和第一沉积层上形成第二材料。 形成第二沟槽,使第一沉积层暴露在第一沟槽内。 第二沟槽部分地填充有形成第三沟槽的第二沉积层。 在基板上形成第三材料层以覆盖第二沉积层和第二材料层。 在第一沉积层的边缘和第一沟槽的中心之间的第三沉积层上形成台阶高度。 在第三沉积层上形成用作内标的凸起特征。

    Methods of code programming a mask ROM
    78.
    发明授权
    Methods of code programming a mask ROM 有权
    掩码ROM代码编程方法

    公开(公告)号:US06875659B2

    公开(公告)日:2005-04-05

    申请号:US10614698

    申请日:2003-07-03

    CPC classification number: H01L27/1126

    Abstract: A method of code programming a mask read only memory (ROM) is disclosed. According to the method, a first photoresist layer is formed over word lines and a gate oxide layer of a substrate already having implanted bit lines. The first photoresist layer is patterned to develop pre-code openings over all of the memory cells, which correspond to intersecting word and bit lines. The first photoresist layer is then hardened using either a treatment implant or a treatment plasma. Subsequently, a second photoresist layer is formed over the first photoresist layer and patterned to develop real-code openings over memory cells which are actually to be coded with a logic “0” value. Each memory cell to be coded is then implanted with implants passing through the pre-code openings and the real code openings and into the memory cell.

    Abstract translation: 公开了一种代码编程掩模只读存储器(ROM)的方法。 根据该方法,在字线和具有注入位线的衬底的栅极氧化物层上形成第一光致抗蚀剂层。 图案化第一光致抗蚀剂层以在对应于相交字和位线的所有存储单元上形成预编码开口。 然后使用处理植入物或处理等离子体硬化第一光致抗蚀剂层。 随后,在第一光致抗蚀剂层上形成第二光致抗蚀剂层,并将其图案化以在实际上以逻辑“0”值编码的存储器单元上形成实际代码开口。 然后,将通过预代码开口和实际代码开口的植入物植入待编码的每个存储单元并进入存储单元。

    Method of fabricating non-volatile memory
    79.
    发明授权
    Method of fabricating non-volatile memory 有权
    制造非易失性存储器的方法

    公开(公告)号:US06794280B2

    公开(公告)日:2004-09-21

    申请号:US10604587

    申请日:2003-07-31

    Applicant: Ching-Yu Chang

    Inventor: Ching-Yu Chang

    CPC classification number: H01L27/1126 H01L27/112

    Abstract: A method of fabricating a non-volatile memory is provided. A longitudinal strip of stacked layer is formed over a substrate. The longitudinal strip is a stacked layer comprising a gate dielectric layer, a conductive layer and a cap layer. A buried bit line is formed in the substrate on each side of the longitudinal strip. The longitudinal strip is patterned to form a plurality of stacked blocks. Thereafter, a dielectric layer is formed over the substrate. The dielectric layer exposes the cap layer of the stacked blocks. Some cap layers of the stacked blocks are removed to expose the conductive layer underneath. A word line is formed over the dielectric layer to connect stacked blocks in the same row serially together.

    Abstract translation: 提供了一种制造非易失性存储器的方法。 堆叠层的纵向条形成在衬底上。 纵向条是包括栅介电层,导电层和盖层的层叠层。 在纵向条的每一侧上的基板中形成掩埋位线。 图案化纵向条以形成多个堆叠的块。 此后,在衬底上形成电介质层。 电介质层暴露堆叠块的盖层。 去除堆叠块的一些盖层以露出下面的导电层。 在电介质层上形成一个字线,以将串联在同一行中的堆叠块连接起来。

    Biosensor
    80.
    发明授权
    Biosensor 有权
    生物传感器

    公开(公告)号:US06787013B2

    公开(公告)日:2004-09-07

    申请号:US09949693

    申请日:2001-09-10

    Abstract: A spacer forming method for a biosensor that has a biosensor possessing a capillary sampling channel and electrical connecting tracks for the use of a specific portable meter. A pair of electrodes is printed on an insulating base plate to be the transducer of the electrochemical biosensor by means of the screen-printing technology. The advanced thick-film printing technology is employed to construct the spacer component of the sampling channel that precisely controls the volume of a sample solution. Therefore, the spacer forming method reduces the usage of adhesive that otherwise causes a serious problem during a continuous punching procedure. Furthermore, the embedded switch pad on the biosensor is introduced to be instead of a micro switch in a connector of the portable meter.

    Abstract translation: 一种用于生物传感器的间隔物形成方法,其具有具有毛细管取样通道的生物传感器和用于使用特定便携式仪表的电连接轨道。 通过丝网印刷技术将一对电极印刷在绝缘基板上作为电化学生物传感器的换能器。 采用先进的厚膜印刷技术构建了精确控制样品溶液体积的取样通道的间隔元件。 因此,间隔物形成方法减少了在连续冲压过程中导致严重问题的粘合剂的使用。 此外,引入生物传感器上的嵌入式开关板代替便携式仪表的连接器中的微型开关。

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