摘要:
The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. Typically, the anneal regions may be square or rectangular in shape. Generally, the optical system and methods of the present invention are used to preferentially anneal one or more regions found within the anneal regions by delivering enough energy to cause the one or more regions to re-melt and solidify.
摘要:
A thermal processing system includes a source of laser radiation emitting at a laser wavelength, beam projection optics disposed between the reflective surface and a substrate support capable of holding a substrate to be processed, a pyrometer responsive to a pyrometer wavelength, and a wavelength responsive optical element having a first optical path for light in a first wavelength range including the laser wavelength, the first optical path being between the source of laser radiation and the beam projection optics, and a second optical path for light in a second wavelength range including the pyrometer wavelength, the second optical path being between the beam projection optics and the pyrometer. The system can further include a pyrometer wavelength blocking filter between the source of laser radiation and the wavelength responsive optical element.
摘要:
A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.
摘要:
The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
摘要:
A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.
摘要:
A beam shaper has a light pipe fabricated of a material having a refractive index that provides total internal reflection within the light pipe. A first face accepts light and a second face releases light from the light pipe. The faces are orthogonal to an axis about which the light pipe is twisted and have different shapes. The area of the second face differs from an area of the first face by less than 25%.
摘要:
The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
摘要:
An apparatus for measuring the temperature of a substrate in a thermal processing chamber is disclosed. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The apparatus includes a first polarizer positioned to polarize radiation reflected by the reflector, a probe having an input end positioned to receive reflected and non-reflected radiation from the reflecting cavity, a polarizing system optically coupled to an output end of the probe, and a detector apparatus optically coupled to the polarizing system. The polarizing system is configured to generate a first beam and a second beam, and it includes a second polarizer oriented such that a ratio of reflected radiation to non-reflected radiation is higher in the first beam than the second beam. The detector apparatus generates a first intensity signal from the first beam and a second intensity signal from the second beam. The two intensity signals are processed to determine an emissivity-corrected substrate temperature.
摘要:
A method for dissipating accumulated charge in a trench isolation structure, comprising the steps of: etching the trench region into a silicon substrate; forming an insulating region on the sidewalls of the trench and the base of the trench; removing the insulator at the bottom of the trench; and filling the trench with polysilicon, the polysilicon engaging the second layer of silicon below the insulator layer.
摘要:
A polishing tool having a polishing wheel that forms a set of pockets wherein the pockets receive a stream of water and are formed such that a high hydrostatic pressure builds in the pockets as the polishing tool rotates in a high precision grinding machine and addresses a surface of a substrate. The high hydrostatic pressure removes material from the surface of the substrate while preserving the precise thickness variation control of the high precision grinding machine.