Liquid crystal display
    71.
    发明授权
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号:US08610864B2

    公开(公告)日:2013-12-17

    申请号:US12560976

    申请日:2009-09-16

    IPC分类号: G02F1/1343 G02F1/1337

    摘要: A liquid crystal display according to an exemplary embodiment of the present invention includes: a pixel electrode including a first subpixel electrode and a second subpixel electrode with a gap therebetween; a common electrode facing the pixel electrode; and a liquid crystal layer formed between the pixel electrode and the common electrode, and including a plurality of liquid crystal molecules, wherein the first and second subpixel electrodes include a plurality of minute branches, the first and second subpixel electrodes include a plurality of subregions having different length directions of the minute branches, and the width of the minute branches is wider than an interval between the neighboring minute branches.

    摘要翻译: 根据本发明的示例性实施例的液晶显示器包括:像素电极,包括第一子像素电极和第二子像素电极,其间具有间隙; 面对像素电极的公共电极; 以及形成在像素电极和公共电极之间的液晶层,并且包括多个液晶分子,其中第一和第二子像素电极包括多个分支,第一和第二子像素电极包括多个子区域,其具有 分支分支的不同长度方向,分支分支的宽度比相邻分支之间的间隔宽。

    Thin-film transistor substrate, method of manufacturing same and display apparatus having same
    73.
    发明授权
    Thin-film transistor substrate, method of manufacturing same and display apparatus having same 有权
    薄膜晶体管基板及其制造方法及其显示装置

    公开(公告)号:US08426228B2

    公开(公告)日:2013-04-23

    申请号:US13181403

    申请日:2011-07-12

    IPC分类号: H01L29/06 H01L29/08

    摘要: Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.

    摘要翻译: 通过用无机绝缘层密封滤色器层,从而阻挡了设置在薄膜晶体管(TFT)支撑基板上的滤色器层的材料。 在批量生产制造期间,在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上,包括顺应地包括通过滤色器层提供的开口。

    Liquid crystal display and method thereof
    74.
    发明授权
    Liquid crystal display and method thereof 有权
    液晶显示器及其方法

    公开(公告)号:US08174661B2

    公开(公告)日:2012-05-08

    申请号:US12409673

    申请日:2009-03-24

    摘要: A liquid crystal display includes a first insulating substrate including a display area and a peripheral area, a display area signal line in the display area of the first insulating substrate. a peripheral area signal line in the peripheral area of the first insulating substrate, a driving circuit portion in the peripheral area of the first insulating substrate, receiving an input signal through the peripheral area signal line, and thereby generating an output signal to supply to the display area signal line, a second insulating substrate facing the first insulating substrate and having a common electrode, a liquid crystal layer interposed between the first insulating substrate and the second insulating substrate, and a first sealant disposed between the first insulating substrate and the second insulating substrate and sealing the liquid crystal layer, wherein the common electrode is disposed on a whole surface of the second insulating substrate, and the first sealant is closer to the display area than the peripheral area signal line.

    摘要翻译: 液晶显示器包括:第一绝缘基板,包括显示区域和外围区域;第一绝缘基板的显示区域中的显示区域信号线。 在第一绝缘基板的周边区域中的周边区域信号线,第一绝缘基板的周边区域中的驱动电路部分,通过周边区域信号线接收输入信号,从而生成输出信号, 显示区域信号线,面向第一绝缘基板的第二绝缘基板,具有公共电极,介于第一绝缘基板和第二绝缘基板之间的液晶层,以及配置在第一绝缘基板与第二绝缘基板之间的第一密封材料 基板并密封液晶层,其中,公共电极设置在第二绝缘基板的整个表面上,并且第一密封剂比外围区域信号线更靠近显示区域。

    THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME
    75.
    发明申请
    THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME 有权
    薄膜晶体管基板,其制造方法和具有其的显示装置

    公开(公告)号:US20110269254A1

    公开(公告)日:2011-11-03

    申请号:US13181403

    申请日:2011-07-12

    IPC分类号: H01L33/08

    摘要: Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.

    摘要翻译: 通过用无机绝缘层密封滤色器层,从而阻挡了设置在薄膜晶体管(TFT)支撑基板上的滤色器层的材料。 在批量生产制造期间,在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上,包括顺应地包括通过滤色器层提供的开口。

    Array substrate, method of manufacturing the same and display apparatus having the same
    76.
    发明授权
    Array substrate, method of manufacturing the same and display apparatus having the same 有权
    阵列基板及其制造方法以及具有该基板的显示装置

    公开(公告)号:US08031317B2

    公开(公告)日:2011-10-04

    申请号:US12427250

    申请日:2009-04-21

    IPC分类号: G02F1/1345 G02F1/1343

    摘要: A first wiring is formed on an array substrate, such that the first wiring has a first protrusion. A second wiring is formed on a different layer from that of the first wiring, such that a portion of the second wiring overlaps with the first protrusion. A protection layer that covers the first and second wirings is formed, such that the protection layer has first and second contact holes that expose the first and second wirings, respectively. Then, a third wiring that electrically connects the first wiring to the second wiring through the first and second contact holes is formed. When electrical connection between the first and second wirings is abnormal, a laser beam is irradiated toward the first protrusion, so that the electrical connection may be repaired.

    摘要翻译: 在阵列基板上形成第一布线,使得第一布线具有第一突起。 第二布线形成在与第一布线不同的层上,使得第二布线的一部分与第一突起重叠。 形成覆盖第一和第二布线的保护层,使得保护层具有分别暴露第一和第二布线的第一和第二接触孔。 然后,形成通过第一和第二接触孔将第一布线电连接到第二布线的第三布线。 当第一和第二布线之间的电连接异常时,向第一突起照射激光束,从而可以修复电连接。

    Thin film transistor array substrate, method for manufacturing the same and system for inspecting the substrate
    77.
    发明授权
    Thin film transistor array substrate, method for manufacturing the same and system for inspecting the substrate 有权
    薄膜晶体管阵列基板及其制造方法以及检查基板的系统

    公开(公告)号:US07863620B2

    公开(公告)日:2011-01-04

    申请号:US12574915

    申请日:2009-10-07

    IPC分类号: H01L29/76 H01L21/00

    摘要: Disclosed is a thin film transistor substrate and a system for inspecting the same. The thin film transistor substrate comprises gate wiring formed on an insulation substrate and including gate lines, and gate electrodes and gate pads connected to the gate lines; a gate insulation layer covering the gate wiring; a semiconductor layer formed over the gate insulation layer; data wiring formed over the gate insulation layer and including data pads; a protection layer covering the data wiring; auxiliary pads connected to the data pads through contact holes formed in the protection layer; and a pad auxiliary layer formed protruding a predetermined height under the data pads. The inspection system for determining whether a thin film transistor substrate is defective, in which the thin film transistor substrate comprises gate wiring including gate lines, gate electrodes and gate pads, and data wiring including source electrodes and drain electrodes, includes a probe pin for contacting the gate pads or data pads and transmitting a corresponding signal, wherein a contact tip at a distal end of the probe pin for contacting the gate pads or the data pads is rounded, and a radius of the rounded contact tip is 2 μm or less, or the rounded contact tip is coated with gold (Au).

    摘要翻译: 公开了一种薄膜晶体管基板及其检查系统。 薄膜晶体管基板包括形成在绝缘基板上并包括栅极线的栅极布线,以及连接到栅极线的栅电极和栅极焊盘; 覆盖栅极布线的栅极绝缘层; 形成在所述栅绝缘层上的半导体层; 数据布线形成在栅极绝缘层上并包括数据焊盘; 覆盖数据线的保护层; 辅助焊盘通过形成在保护层中的接触孔连接到数据焊盘; 以及在数据焊盘下方突出预定高度形成的焊盘辅助层。 用于确定薄膜晶体管基板是否缺陷的检查系统,其中薄膜晶体管基板包括包括栅极线,栅电极和栅极焊盘的栅极布线,以及包括源电极和漏电极的数据布线,包括用于接触的探针 所述栅极焊盘或数据焊盘并传输相应的信号,其中用于接触所述栅极焊盘或所述数据焊盘的所述探针的远端处的接触尖端是圆形的,并且所述圆形接触尖端的半径为2μm或更小, 或圆形接触尖端涂有金(Au)。

    Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same

    公开(公告)号:US07605875B2

    公开(公告)日:2009-10-20

    申请号:US11450898

    申请日:2006-06-08

    IPC分类号: G02F1/1343 G02F1/136

    摘要: Disclosed is a simplified manufacturing method for liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on an insulating substrate. Next, a gate insulating layer covering the gate wire, a semiconductor layer, an ohmic contact layer, and a data conductive layer are sequentially deposited, and a photoresist pattern is formed on the data conductive layer. Following this step, the data conductive layer, using the photoresist pattern as an etch mask, is etched to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, the photoresist pattern is reflowed to cover the portion between the source electrode and the drain electrode, and a portion of the ohmic contact layer adjacent to a periphery of the data wire. Subsequently, portions of the ohmic contact layer and the semiconductor layer, which are not covered by the photoresist pattern, are etched, and the photoresist pattern is removed. Next, a portion of the ohmic contact layer, which is not covered by the data wire, is etched to expose a portion of the semiconductor layer between the source electrode and the drain electrode that is a channel portion of a thin film transistor. Finally, a protection layer, a pixel electrode, a redundant gate pad and a redundant data pad are formed.

    Method for manufacturing contact structures of wirings
    80.
    发明授权
    Method for manufacturing contact structures of wirings 有权
    制造接线接触结构的方法

    公开(公告)号:US07288442B2

    公开(公告)日:2007-10-30

    申请号:US10634867

    申请日:2003-08-06

    IPC分类号: H01L21/84 H01L21/00

    摘要: First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by depositing nitride silicon in the range of more than 300° C. for 5 minutes, and a semiconductor layer and an ohmic contact layer are sequentially formed. Next, a conductor layer of a metal such as Cr is deposited and patterned to form a data wire include a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Then, a passivation layer is deposited and patterned to form contact holes exposing the drain electrode, the gate pad and the data pad. Next, indium zinc oxide is deposited and patterned to form a pixel electrode, a redundant gate pad and a redundant data pad respectively connected to the drain electrode, the gate pad and the data pad.

    摘要翻译: 首先,将铝基材料的导电材料沉积并图案化以形成包括栅极线,栅极焊盘和栅电极的栅极线。 通过在大于300℃的范围内沉积氮化硅5分钟形成栅极绝缘层,并依次形成半导体层和欧姆接触层。 接下来,沉积并图案化诸如Cr的金属的导体层以形成数据线,其包括与栅极线相交的数据线,源电极,漏电极和数据焊盘。 然后,沉积并图案化钝化层以形成暴露漏电极,栅极焊盘和数据焊盘的接触孔。 接下来,沉积并图案化氧化铟锌以形成分别连接到漏电极,栅极焊盘和数据焊盘的像素电极,冗余栅极焊盘和冗余数据焊盘。