ELECTRONIC DEVICE
    73.
    发明申请
    ELECTRONIC DEVICE 审中-公开
    电子设备

    公开(公告)号:US20100078795A1

    公开(公告)日:2010-04-01

    申请号:US11993516

    申请日:2006-06-28

    IPC分类号: H01L23/538 H01L23/482

    摘要: The electronic device comprises a semiconductor substrate (10) with at a first side (1) a circuit of semiconductor elements (20). The substrate (10) is present between a carrier (40) and an encapsulation (70), so that the first side (1) of the substrate (10) faces the carrier (40). The circuit of semiconductor elements (20) is coupled with conductor tracks (25) to a metallization (82) in a groove (80) in the encapsulation (70), which metallization (82) extends to terminals (90) at an outside of the encapsulation (70). At least one further electrical element (120) is defined between the first side (1) of the semiconductor substrate (10) and the encapsulation (70). This further element (120) is provided with at least one conductor track (65) extending to the metallization (82) in the groove (80) so as to incorporate the further element (120) in the circuit of semiconductor elements (20) on the first side (1) of the substrate (10).

    摘要翻译: 电子器件包括半导体衬底(10),在半导体元件(20)的第一侧(1)具有电路。 衬底(10)存在于载体(40)和封装(70)之间,使得衬底(10)的第一侧(1)面向载体(40)。 半导体元件(20)的电路与导体轨道(25)耦合到封装(70)中的凹槽(80)中的金属化(82),该金属化(82)延伸到端子(90)的外部 封装(70)。 在半导体衬底(10)的第一侧(1)和封装(70)之间限定至少一个另外的电元件(120)。 这个另外的元件(120)设置有至少一个延伸到凹槽(80)中的金属化(82)的导体轨道(65),以便在半导体元件(20)的电路中并入另外的元件(120) 衬底(10)的第一侧(1)。

    Electronic Device Comprising a Mems Element
    74.
    发明申请
    Electronic Device Comprising a Mems Element 审中-公开
    包含Mems元素的电子设备

    公开(公告)号:US20080283943A1

    公开(公告)日:2008-11-20

    申请号:US12093996

    申请日:2006-11-07

    IPC分类号: H01L21/50 H01L29/84

    摘要: The device (100) comprises a MEMS element (60) in a cavity (30) that is closed by a packaging portion (17) on a second side (2) of the substrate (10). Contact pads (25) are defined on a flexible resin layer (13) on an opposite first side (1) of the substrate. Electrical connections (32) extend through the resin layer (13) to at least one element of the device (100). The device (100) is suitably made with the use of a temporary carrier (42), and opening of etching holes (18) from the second side (2) of the substrate (10).

    摘要翻译: 装置(100)包括在由基板(10)的第二侧(2)上的封装部分(17)封闭的空腔(30)中的MEMS元件(60)。 接触垫(25)限定在基板的相对的第一侧(1)上的柔性树脂层(13)上。 电连接(32)延伸穿过树脂层(13)到装置(100)的至少一个元件。 所述装置(100)适合于使用临时载体(42),并从所述基板(10)的第二侧(2)打开蚀刻孔(18)。

    Producing a Covered Through Substrate Via Using a Temporary Cap Layer
    75.
    发明申请
    Producing a Covered Through Substrate Via Using a Temporary Cap Layer 有权
    通过使用临时盖层生成通过基板覆盖

    公开(公告)号:US20080280435A1

    公开(公告)日:2008-11-13

    申请号:US12092605

    申请日:2006-11-03

    IPC分类号: H01L21/768

    摘要: The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer

    摘要翻译: 本发明涉及一种制造具有至少一个覆盖通孔的基板的方法,所述至少一个覆盖通孔电连接并优选地将第一基板侧与相对的第二基板侧热连接。 所述处理涉及在第一基板侧上形成沟槽,并在热处理步骤中分解的临时牺牲盖层的顶部上保留并覆盖具有永久层的沟槽。 本发明的方法提供了即使在存在永久层的情况下除去牺牲帽层材料的分解产物而不留下痕迹或污染物的替代方法。根据本发明的第一方面,通过提供衬底沟槽 具有孔的外涂层。 外涂层中的孔留下去除盖层材料的分解产物的空间。 根据本发明的第二方面,从第二基板侧打开被覆盖的沟槽并且允许通过该开口去除盖层材料提供了一种解决方案。 本发明的两种方法都是基于即使在基板开口被永久覆盖之前使用临时盖层的常见思想,在移除临时盖层之前

    Method of manufacturing a semiconductor device and a semiconductor device obtained by means of said method
    76.
    发明授权
    Method of manufacturing a semiconductor device and a semiconductor device obtained by means of said method 失效
    通过所述方法获得的制造半导体器件和半导体器件的方法

    公开(公告)号:US07314782B2

    公开(公告)日:2008-01-01

    申请号:US10527777

    申请日:2003-08-21

    IPC分类号: H01L21/00

    摘要: The invention relates to a method of manufacturing a semiconductor device (10) in which, in a semiconductor body (1) with a temporary substrate (2), at least one semiconductor element (3) is formed which, on a side of the semiconductor body (1) opposite to the substrate (2), is provided with at least one connection region (4), and, on the said side, a dielectric (5) is formed and patterned to leave free the connection region (4), after which a metal layer (6) is deposited over the dielectric (5) so as to be in contact with the connection region (4), which metal layer (6) serves as an electric connection conductor of the connection region (4), after which the temporary substrate (2) is removed and the metal layer (6) also serves as a substrate of the device (10). According to the invention, before the metal layer (6) is deposited, there is formed, around the patterned part of the dielectric (5) and around the semiconductor element (3), an annular region (7) of a resin having a larger thickness than the dielectric (5), and the metal layer (6) is deposited within the rectangular annular region (7). In this way, an individual device (10) can readily be formed after the metal layer (6) has been deposited, preferably by pushing the device (10) out of the region (7). Preferably, a (different) photoresist is chosen for the dielectric (5) and the region (7). The invention also comprises a semiconductor device (10) obtained in this way.

    摘要翻译: 本发明涉及一种制造半导体器件(10)的方法,其中在具有临时衬底(2)的半导体本体(1)中,形成至少一个半导体元件(3),其在半导体 本体(1)与基板(2)相对设置有至少一个连接区域(4),并且在所述侧面上形成有电介质(5)并图案化以使连接区域(4)免费, 之后将金属层(6)沉积在电介质(5)上以与连接区域(4)接触,该金属层(6)用作连接区域(4)的电连接导体, 之后移除临时衬底(2),金属层(6)也用作器件(10)的衬底。 根据本发明,在金属层(6)沉积之前,在电介质(5)的图案化部分周围形成围绕半导体元件(3)的环形区域(7),具有较大的 厚度比电介质(5)厚,并且金属层(6)沉积在矩形环形区域(7)内。 以这种方式,优选地,通过将​​装置(10)推出区域(7)之后,可以容易地在沉积金属层(6)之后形成单个装置(10)。 优选地,为电介质(5)和区域(7)选择(不同的)光致抗蚀剂。 本发明还包括以这种方式获得的半导体器件(10)。

    Method of making a small substrate compatible for processing
    77.
    发明申请
    Method of making a small substrate compatible for processing 审中-公开
    制造小基板兼容加工的方法

    公开(公告)号:US20070184580A1

    公开(公告)日:2007-08-09

    申请号:US10597994

    申请日:2005-02-02

    IPC分类号: H01L21/00

    摘要: A method of making a comparatively small substrate (12) compatible with manufacturing equipment for a larger-size standard substrate is disclosed. The standard substrate (1) has a surface (10) in which a depression (8) is formed, in which depression the small substrate is connected by means of a layer of a bonding material (13). The depression is formed so as to have a flat bottom (9) extending parallel to the surface. The depression has a depth such that, after the small substrate has been connected with its rear side to the bottom of the depression of the standard substrate by means of the layer of bonding material, the front side (14) of the small substrate forms a free surface which practically coincides with the surface (10) of the carrier wafer. When the standard substrate with the small substrate positioned in the depression is placed into a lithographic stepper, the free surface of the small substrate is placed automatically in a position such that patterns having very small dimensions can be projected onto a photoresist layer formed on said free surface.

    摘要翻译: 公开了一种制造与较大尺寸标准基板的制造设备兼容的较小基板(12)的方法。 标准基板(1)具有其中形成有凹部(8)的表面(10),其中小基板通过粘合材料层(13)连接。 凹陷形成为具有平行于表面延伸的平坦的底部(9)。 凹陷具有这样的深度,使得在通过粘合材料层将小基板与其后侧连接到标准基板的凹陷的底部之后,小基板的正面(14)形成 实际上与载体晶片的表面(10)重合的自由表面。 当将具有位于凹陷中的小衬底的标准衬底放置在光刻步进器中时,小衬底的自由表面被自动放置在使得具有非常小的尺寸的图案能够投影到形成在所述自由 表面。

    Method of manufacturing a thermoelectric device and thermoelectric device obtained by means of such a method
    79.
    发明申请
    Method of manufacturing a thermoelectric device and thermoelectric device obtained by means of such a method 审中-公开
    通过这种方法获得的制造热电装置和热电装置的方法

    公开(公告)号:US20060278265A1

    公开(公告)日:2006-12-14

    申请号:US10557621

    申请日:2004-05-17

    IPC分类号: H01L35/02 H01L35/34

    CPC分类号: H01L35/34

    摘要: The invention relates to a method of manufacturing a thermoelectric device (10), in particular a thermoelectric generator (10), comprising a flexible foil (1) on which two groups (2, 3) of series-connected strip-shaped parts (2A, 3A) are formed, where the materials chosen for the two groups of parts (2A, 3A) are materials with a different thermoelectric coefficient and said two groups of parts are formed in a pattern (100) such that the connections (4) between one part (2A) of one group (2) and another part (3A) of the other group (3) are alternately positioned in two spaced apart areas (G1, G2) of the foil (1), and after the formation of the parts (2A, 3A) on a substrate (5), the foil (1) is attached to the stripshaped parts (2A, 3A), after which the substrate (5) is removed. According to the invention, for the substrate (5) use is made of a rigid (=relatively thick) substrate (5), and before the substrate (5) is removed a rigid (=relatively thick) carrier plate (6) is attached to the foil (1) that is removed again from the foil (1) after removal of the rigid substrate (5). In this way, the method is particularly suitable for the use of semiconductor substrates (5) which can be rapidly removed by chemical-mechanical polishing. Preferably, the foil (1) with the device (10) is folded or coiled before use.

    摘要翻译: 本发明涉及一种制造热电装置(10)的方法,特别是一种热电发生器(10),其包括柔性箔(1),两组(2,3)串联连接的带状部件(2 A,3A),其中为两组部件(2A,3A)选择的材料是具有不同热电系数的材料,并且所述两组部件以图案(100)形成,使得连接 在另一组(3)的一组(2)的一部分(2A)和另一组(3)的另一部分(3A)之间的(4)交替地位于箔(1)的两个间隔开的区域(G 1,G 2) ),并且在基板(5)上形成部件(2A,3A)之后,将箔(1)附接到条状部件(2A,3A),然后将基板(5) 删除。 根据本发明,对于基底(5),使用刚性(=相对较厚)的基底(5),并且在移除基底(5)之前,附接刚性(=较厚)的载体板(6) 涉及在去除刚性基材(5)之后再次从箔(1)上除去的箔(1)。 以这种方式,该方法特别适用于可通过化学机械抛光快速去除的半导体衬底(5)。 优选地,具有装置(10)的箔(1)在使用之前被折叠或盘绕。

    Method of manufacturing a magnetic head having a planar coil
    80.
    发明授权
    Method of manufacturing a magnetic head having a planar coil 失效
    制造具有平面线圈的磁头的方法

    公开(公告)号:US07027269B2

    公开(公告)日:2006-04-11

    申请号:US09923611

    申请日:2001-08-07

    IPC分类号: G11B5/127

    摘要: A simple method of manufacturing a magnetic head having a head face and including a planar magnetic coil (7) which extends parallel to the head face. According to the method, the magnetic coil is formed at a first side of a first substrate (1). Thereafter, the first substrate provided with the magnetic coil is adhered with its first side to a side of a second substrate, whereafter material of the first substrate is removed from a second side of the first substrate (9), the second side being turned away from the first side, in order to form the head face, in such a manner that the magnetic coil is situated near to the head face.

    摘要翻译: 一种制造具有头部表面并包括平行于头部表面延伸的平面磁性线圈(7)的磁头的简单方法。 根据该方法,在第一基板(1)的第一侧形成有电磁线圈。 此后,设置有磁性线圈的第一基板的第一侧粘附到第二基板的一侧,之后从第一基板(9)的第二侧去除第一基板的材料,将第二侧面转回 从第一侧开始,以使磁性线圈靠近头部表面的方式形成头部面。