公开(公告)号：US10521711B1

公开(公告)日：2019-12-31

申请号：US16463525

申请日：2017-02-22

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning Ge ,  Jarrid Wittkopf ,  Robert Ionescu ,  Helen A. Holder ,  Paul Howard Mazurkiewicz

IPC: G06K19/073 ,  G06K7/10

Abstract: In some examples, a controllable read blocking based radio-frequency identification (RFID) device may include a substrate layer, and a trace formed of a conductive material and disposed on, partially within, or fully within the substrate layer. The controllable read blocking based RFID device may further include a controllable read blocking layer disposed on the substrate layer and the trace and including a fluid disposed in the controllable read blocking layer to selectively block or allow passage of electromagnetic waves to the trace to respectively inhibit or allow communication of a RFID reading device with the controllable read blocking based RFID device.

公开(公告)号：US20190377994A1

公开(公告)日：2019-12-12

申请号：US16463525

申请日：2017-02-22

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning Ge ,  Jarrid Wittkopf ,  Robert Ionescu ,  Helen A. Holder ,  Paul Howard Mazurkiewicz

IPC: G06K19/073 ,  G06K7/10

Abstract: In some examples, a controllable read blocking based radio-frequency identification (RFID) device may include a substrate layer, and a trace formed of a conductive material and disposed on, partially within, or fully within the substrate layer. The controllable read blocking based RFID device may further include a controllable read blocking layer disposed on the substrate layer and the trace and including a fluid disposed in the controllable read blocking layer to selectively block or allow passage of electromagnetic waves to the trace to respectively inhibit or allow communication of a RFID reading device with the controllable read blocking based RFID device.

公开(公告)号：US10444151B2

公开(公告)日：2019-10-15

申请号：US15570364

申请日：2015-07-29

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Steven Barcelo ,  Ning Ge ,  Zhiyong Li

IPC: G01N21/64 ,  G01N21/65

Abstract: Provided in one example is an analyte detection apparatus that includes surface enhanced luminescence (SEL) structure. A dielectric layer underlies the SEL structure. An electric field generating base underlies the dielectric layer. The electric field generating base is to apply an electric field about the SEL structures to attract charged ions to the SEL structures.

公开(公告)号：US10224335B2

公开(公告)日：2019-03-05

申请号：US15541986

申请日：2015-01-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Wai Mun Wong ,  Leong Yap Chia ,  Ning Ge

IPC: H01L29/49 ,  H01L27/11521 ,  H01L27/1156 ,  G11C16/04

Abstract: The present subject matter relates to an integrated circuit comprising an erasable programmable read only memory (EPROM) array having a plurality of EPROM cells disposed in rows and columns, wherein one or more EPROM cells located at predetermined positions in the EPROM array are selectively dischargeable. The one or more EPROM cells comprise a EPROM transistor having a first conductive layer to store electrons upon the EPROM transistor being programmed and a control metal oxide semiconductor field-effect transistor (MOSFET) electrically connected to the first conductive layer to provide an electron leakage path to dissipate the electrons stored in the first conductive layer in a predetermined leak time period.

公开(公告)号：US10160224B2

公开(公告)日：2018-12-25

申请号：US15718034

申请日：2017-09-28

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Patrick Leonard ,  Adam L. Ghozeil

IPC: B41J2/175 ,  B41J2/045 ,  B41J2/14

Abstract: In some examples, a cartridge includes a printhead comprising a fluid feed slot, a fluid chamber formed between a nozzle layer and a passivation layer, the fluid chamber fluidically coupling the fluid feed slot and a nozzle of the nozzle layer, and a printhead-integrated sensor to sense a property of a fluid in the fluid chamber, the sensor including a ground electrode exposed to the fluid chamber through an opening in the passivation layer.

公开(公告)号：US20180272284A1

公开(公告)日：2018-09-27

申请号：US15763064

申请日：2015-10-22

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Steven Barcedo ,  Ning Ge ,  Anita Rogacs

IPC: B01D63/08 ,  B01D63/00 ,  B01D61/38 ,  B01D67/00 ,  B01L3/00

CPC classification number: B01D63/088 ,  B01D39/1692 ,  B01D61/38 ,  B01D63/005 ,  B01D67/0002 ,  B01D67/0004 ,  B01D67/0034 ,  B01D67/0037 ,  B01D67/0069 ,  B01D67/0072 ,  B01D67/0079 ,  B01D67/0088 ,  B01D69/04 ,  B01D69/10 ,  B01D69/148 ,  B01D71/022 ,  B01D2325/028 ,  B01L3/502715 ,  B01L2200/027 ,  B01L2300/0681

Abstract: A microporous structure includes an array of nano wires and a coating about the nano wires of the array. The coating defines pores between the nano wires.

公开(公告)号：US09987842B2

公开(公告)日：2018-06-05

申请号：US15518934

申请日：2014-10-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Jianwen Luo ,  Leong Yap Chia ,  Ning Ge

IPC: B41J2/045 ,  B41J2/175

CPC classification number: B41J2/04541 ,  B41J2/0458 ,  B41J2/04581 ,  B41J2/1753 ,  B41J2/17546 ,  B41J2202/17

Abstract: A print head with a number of memristors and inverters is described. The print head includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The print head also includes a number of memristor cells. Each memristor cell includes a memristor to store data, a voltage divider serially connected to the 116 memristor cell, and an inverter connected in parallel with the number of memristor cells and the voltage divider.

公开(公告)号：US09953991B2

公开(公告)日：2018-04-24

申请号：US15119989

申请日：2014-03-14

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Leong Yap Chia ,  Jose Jehrome Rando

IPC: H01L29/423 ,  H01L27/115 ,  H01L27/11519 ,  H01L29/78 ,  H01L29/788 ,  H01L27/11524 ,  H01L21/28 ,  B41J2/14

CPC classification number: H01L27/11519 ,  B41J2/14 ,  H01L21/28273 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/4238 ,  H01L29/78 ,  H01L29/7881

Abstract: An electronically programmable read-only memory (EPROM) cell includes a semiconductor substrate having source and drain regions; a floating gate, adjacent to the source and drain regions and separated from the semiconductor substrate by a first dielectric layer, the floating gate including: a polysilicon layer formed over the first dielectric layer; a first metal layer electrically connected to the polysilicon layer, where the surface area of the first metal layer is less than 1000 μm2; and a control gate comprising a second metal layer, capacitively coupled to the first metal layer through a second dielectric material disposed therebetween.

公开(公告)号：US09919519B2

公开(公告)日：2018-03-20

申请号：US15104909

申请日：2013-12-16

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning Ge

IPC: B41J2/045 ,  B41J2/14

CPC classification number: B41J2/04563 ,  B41J2/04581 ,  B41J2/14153

Abstract: A printhead including a fluid slot area in which a plurality of fluid slots are formed and a temperature sensing member, heating element or temperature sensing resistor including an edge portion and an inner portion. The edge portion extends along at least a part of an edge of the fluid slot area and the inner portion is connected to the edge portion and extends in-between two adjacent fluid slots.

公开(公告)号：US09914297B2

公开(公告)日：2018-03-13

申请号：US15594068

申请日：2017-05-12

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Mun Hooi Yaow ,  Bee Ling Peh

IPC: B41J2/14

CPC classification number: B41J2/14032 ,  B41J2/14016 ,  B41J2/14072 ,  B41J2/1412 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1626 ,  B41J2/164

Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to contain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.