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公开(公告)号：US08637328B2
公开(公告)日：2014-01-28
申请号：US13564158
申请日：2012-08-01
CPC分类号： H01L29/7802 , H01L21/263 , H01L21/266 , H01L21/322 , H01L29/0634 , H01L29/1095 , H01L29/66712
摘要： An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.
摘要翻译： 公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。 一个实施例提供缺陷相关的供体和/或受体。 所需的缺陷是通过半导体本体的电子照射产生的。 具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。
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公开(公告)号：US20130320487A1
公开(公告)日：2013-12-05
申请号：US13487540
申请日：2012-06-04
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L29/861 , H01L21/761 , H01L21/76224 , H01L29/0619 , H01L29/0649 , H01L29/0692 , H01L29/872
摘要： A semiconductor body of a semiconductor device includes a doped layer of a first conductivity type and one or more doped zones of a second conductivity type. The one or more doped zones are formed between the doped layer and the first surface of a semiconductor body. Trench structures extend from one of the first and the second opposing surface into the semiconductor body. The trench structures are arranged between portions of the semiconductor body which are electrically connected to each other. The trench structures may be arranged for mitigating mechanical stress, locally controlling charge carrier mobility, locally controlling a charge carrier recombination rate and/or shaping buried diffusion zones.
摘要翻译： 半导体器件的半导体本体包括第一导电类型的掺杂层和第二导电类型的一个或多个掺杂区。 一个或多个掺杂区形成在半导体本体的掺杂层和第一表面之间。 沟槽结构从第一和第二相对表面之一延伸到半导体本体中。 沟槽结构布置在彼此电连接的半导体本体的部分之间。 沟槽结构可以被布置用于减轻机械应力，局部地控制电荷载流子迁移率，局部地控制电荷载流子复合速率和/或成形掩埋扩散区。
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73.发明申请公开(公告)号：US20130307018A1
公开(公告)日：2013-11-21
申请号：US13475319
申请日：2012-05-18
CPC分类号： H01L29/157 , H01L29/08 , H01L29/10 , H01L29/1095 , H01L29/161 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/7393 , H01L29/7395 , H01L29/74 , H01L29/861
摘要： A semiconductor device includes a first semiconductor region including a first semiconductor material. The semiconductor device further includes a second semiconductor region adjoining the first semiconductor region. The second semiconductor region includes a second semiconductor material different from the first semiconductor material. The semiconductor device further includes a drift or base zone in the first semiconductor region. The semiconductor device further includes an emitter region in the second semiconductor region. The second semiconductor region includes at least one type of deep-level dopant. A solubility of the at least one type of deep-level dopant is higher in the second semiconductor region than in the first semiconductor region.
摘要翻译： 半导体器件包括包括第一半导体材料的第一半导体区域。 半导体器件还包括邻接第一半导体区域的第二半导体区域。 第二半导体区域包括与第一半导体材料不同的第二半导体材料。 半导体器件还包括第一半导体区域中的漂移或基极区域。 半导体器件还包括在第二半导体区域中的发射极区域。 第二半导体区域包括至少一种类型的深层掺杂剂。 第二半导体区域中的至少一种类型的深层掺杂剂的溶解度高于第一半导体区域中的溶解度。
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74.发明申请SEMICONDUCTOR COMPONENT COMPRISING A DOPANT REGION IN A SEMICONDUCTOR BODY AND A METHOD FOR PRODUCING A DOPANT REGION IN A SEMICONDUCTOR BODY 有权包含半导体体中的掺杂区域的半导体元件和用于在半导体体内产生掺杂区域的方法公开(公告)号：US20130249058A1
公开(公告)日：2013-09-26
申请号：US13613985
申请日：2012-09-13
申请人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
发明人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
IPC分类号： H01L29/36 , H01L21/265
CPC分类号： H01L29/167 , H01L21/265 , H01L21/26506 , H01L29/0603 , H01L29/32 , H01L29/36 , H01L29/7393 , H01L29/7801 , H01L29/861
摘要： A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.
摘要翻译： 半导体部件包括具有第一侧和与第一侧相对的第二侧的半导体本体。 在半导体本体中，由氧络合物构成的掺杂剂形成掺杂剂区域。 掺杂剂区域沿着沿着从第一侧到第二侧的方向具有至少10微米的长度的区段L延伸。 掺杂剂区域在部分L上的氧浓度范围为1×1017cm-3至5×1017cm-3。
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公开(公告)号：US08236676B2
公开(公告)日：2012-08-07
申请号：US11944903
申请日：2007-11-26
CPC分类号： H01L29/7802 , H01L21/263 , H01L21/266 , H01L21/322 , H01L29/0634 , H01L29/1095 , H01L29/66712
摘要： An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.
摘要翻译： 公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。 一个实施例提供缺陷相关的供体和/或受体。 所需的缺陷是通过半导体本体的电子照射产生的。 具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。
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76.发明授权Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone 有权用于在半导体本体中制造阻挡区域的方法和具有停止区域的半导体部件公开(公告)号：US08178411B2
公开(公告)日：2012-05-15
申请号：US12550483
申请日：2009-08-31
IPC分类号： H01L21/336 , H01L21/425
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件，所述方法包括提供具有第一和第二侧面的半导体本体和第一导电类型的基本掺杂。 该方法还包括经由一个侧面的质子照射半导体本体，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中。 该方法还包括进行热处理，其中将半导体体加热至预定温度达预定持续时间，选择温度和持续时间，使得在第一区域和第二区域都产生氢诱导的供体 在照射侧的方向上与第一区域相邻的区域。
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公开(公告)号：US08003502B2
公开(公告)日：2011-08-23
申请号：US12416935
申请日：2009-04-02
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schaeffer , Franz-Josef Niedernostheide
IPC分类号： H01L21/425
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。
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78.发明授权公开(公告)号：US07989888B2
公开(公告)日：2011-08-02
申请号：US11468846
申请日：2006-08-31
IPC分类号： H01L29/66
CPC分类号： H01L29/7395 , H01L29/0834 , H01L29/167 , H01L29/32 , H01L29/36
摘要： Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.
摘要翻译： 本文讨论的实施例涉及通过将掺杂剂原子注入到衬底中以在沟道区域和衬底的表面之间形成场阻挡区域来在半导体衬底内产生场阻挡区的工艺，至少一些掺杂原子具有能级 比半导体衬底的导带边缘的能级低至少0.15eV; 并激光退火现场停止区。
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公开(公告)号：US07696528B2
公开(公告)日：2010-04-13
申请号：US11561985
申请日：2006-11-21
IPC分类号： H01L29/74
CPC分类号： H01L31/1113 , H01L29/0626 , H01L29/102 , H01L29/7408 , H01L29/7424 , H01L29/7428
摘要： A thyristor has a radiation-sensitive breakdown structure (20), a gate electrode (92) that is placed at a distance from the latter in a lateral direction and an ignition stage structure having at least one ignition stage (51, 91) equipped with an n-doped auxiliary emitter (51), which forms a pn-junction (55) together with the p-doped base (6), the thyristor being both electrically and radiation-ignited. In a method for contacting a thyristor that can be ignited by radiation with a gate electrode (92), a contact ram (200) that is adapted to the geometry of the gate electrode (92) is pressed against the thyristor. In a method for monitoring the ignition of a thyristor that is ignited by incident radiation, the electric voltage that is applied to the gate electrode (92) or the electrically conductive electrode (105, 201) is monitored.
摘要翻译： 晶闸管具有辐射敏感击穿结构（20），在横向方向上与后者放置一定距离的栅电极（92）和具有至少一个点火台（51,91）的点火台结构 n掺杂的辅助发射器（51）与p掺杂的基极（6）一起形成pn结（55），所述晶闸管是电的和辐射的。 在使栅极电极（92）能够被辐射点燃的晶闸管接触的方法中，适合于栅电极（92）的几何形状的接触柱塞（200）被压靠在晶闸管上。 在监视由入射辐射点燃的晶闸管的点火的方法中，监视施加到栅电极（92）或导电电极（105,201）的电压。
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公开(公告)号：US20100087053A1
公开(公告)日：2010-04-08
申请号：US12571037
申请日：2009-09-30
CPC分类号： H01L21/26506 , H01L21/3242 , H01L29/66128 , H01L29/8611
摘要： A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T2>T1 and the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors.
摘要翻译： 本发明提供一种制造半导体器件的方法。 半导体本体在p导电区和n导电区之间包括在半导体本体中的深度T1的p导电区，n导电区和pn结。 该方法包括提供半导体本体，通过在第一方向上将形成受主的杂质扩散到半导体本体中而产生p掺杂区，并通过沿第一方向注入质子来产生n导电区， 半导体本体进入深度T2> T1并随后对半导体主体进行热处理，以形成氢诱导的供体。
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