-
公开(公告)号：US07652315B2
公开(公告)日：2010-01-26
申请号：US12169423
申请日：2008-07-08
申请人： Yoshiaki Saito , Hideyuki Sugiyama
发明人： Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： H01L31/113
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , H01L29/66984 , Y10S977/932 , Y10S977/933 , Y10S977/936
摘要： A spin transistor includes a non-magnetic semiconductor substrate having a channel region, a first area, and a second area. The channel region is between the first and the second areas. The spin transistor also includes a first conductive layer located above the first area and made of a ferromagnetic material magnetized in a first direction; and a second conductive layer located above the second area and made of a ferromagnetic material magnetized in one of the first direction and a second direction that is antiparallel with respect to the first direction. The channel region introduces electron spin between the conductive layers. The spin transistor also includes a gate electrode located between the conductive layers and above the channel region; and a tunnel barrier film located between the non-magnetic semiconductor substrate and at least one of the conductive layers.
摘要翻译： 自旋晶体管包括具有沟道区，第一区和第二区的非磁性半导体衬底。 通道区域在第一和第二区域之间。 自旋晶体管还包括位于第一区域上方并由沿第一方向磁化的铁磁材料制成的第一导电层; 以及第二导电层，其位于第二区域上方并由在相对于第一方向反平行的第一方向和第二方向中的一个中被磁化的铁磁材料制成。 沟道区域在导电层之间引入电子自旋。 自旋晶体管还包括位于导电层之间并位于沟道区之上的栅电极; 以及位于非磁性半导体衬底和至少一个导电层之间的隧道阻挡膜。
-
公开(公告)号：US07618586B2
公开(公告)日：2009-11-17
申请号：US11302342
申请日：2005-12-14
申请人： Yoshiaki Saito , Kazuhiro Nakamura
发明人： Yoshiaki Saito , Kazuhiro Nakamura
IPC分类号： G01N35/00
CPC分类号： G01N35/02 , G01N35/0092 , G01N35/1016 , G01N2035/1025 , G01N2035/1032 , Y10T436/12
摘要： An automatic analyzer for performing qualitative and quantitative analyses of living samples, such as blood and urine, which effectively utilizes the sample and enables requested tests to be performed as many as possible, when sample deficiency is predicted as a result of measuring a sample volume in advance. The analyzer includes a unit for measuring a sample volume, and has a function of, when sample deficiency is predicted, automatically changing an analysis mode to a decrease sample assay for a part of tests, thereby reducing a sample volume required depending on the measured sample volume.
摘要翻译： 一种自动分析仪，用于对生物样品（如血液和尿液）进行定性和定量分析，有效利用样品，并且可以尽可能多地执行所需的测试，因为测量样品量时的样品量不足 提前。 分析仪包括用于测量样品体积的单元，并且具有当预测样品缺乏时自动将分析模式改变为部分测试的降低样品测定的功能，从而根据测量样品减少所需的样品体积 卷。
-
公开(公告)号：US07483291B2
公开(公告)日：2009-01-27
申请号：US11202318
申请日：2005-08-12
IPC分类号： G11C11/00
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01F10/3272 , H01L27/224 , H01L27/228 , H01L43/08
摘要： A magneto-resistance effect element includes: a first ferromagnetic layer serving as a magnetization fixed layer; a magnetization free layer including a second ferromagnetic layer provided on one side of the first ferromagnetic layer, a third ferromagnetic layer which is formed on an opposite side of the second ferromagnetic layer from the first ferromagnetic layer and has a film face having an area larger than that of the second ferromagnetic layer and whose magnetization direction is changeable by an external magnetic field, and an intermediate layer provided between the second ferromagnetic layer and the third ferromagnetic layer; and a tunnel baffler layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The second ferromagnetic layer and the third ferromagnetic layer are magnetically coupled via the intermediate layer, and an aspect ratio of a plane shape of the third ferromagnetic layer is within a range from 1 to 2.
摘要翻译： 磁阻效应元件包括：用作磁化固定层的第一铁磁层; 包含设置在第一铁磁层的一侧上的第二铁磁层的无磁化层，第三铁磁层，其形成在第二铁磁层与第一铁磁层相反的一侧上，并具有面积大于 第二铁磁层的磁化方向可由外部磁场变化，以及设置在第二铁磁层与第三铁磁层之间的中间层; 以及设置在所述第一铁磁层和所述第二铁磁层之间的隧道挡板层。 第二铁磁层和第三铁磁层经由中间层磁耦合，并且第三铁磁层的平面形状的纵横比在1至2的范围内。
-
公开(公告)号：US20080299007A1
公开(公告)日：2008-12-04
申请号：US12128728
申请日：2008-05-29
申请人： Kiyoteru Noguchi , Hitoshi Ohtake , Yoshimitsu Takagi , Takuya Yamaguchi , Yoshiaki Saito , Yasuaki Takebe
发明人： Kiyoteru Noguchi , Hitoshi Ohtake , Yoshimitsu Takagi , Takuya Yamaguchi , Yoshiaki Saito , Yasuaki Takebe
CPC分类号： G01N35/00732 , B01L9/06 , B01L2300/021 , B01L2300/023 , B01L2300/024 , G01N35/026 , G01N2035/009
摘要： A specimen rack and a specimen carrier system includes a luminous body disposed on a vicinity of a specimen container loading slot to notify, to an operator, information concerning an analyzing situation and condition of the specimen contained in the specimen container held by the specimen rack.
摘要翻译： 试样架和试样载体系统包括设置在试样容器装载槽附近的发光体，向操作者通知容纳在由试样架保持的试样容器中的试样的分析状况和状态的信息。
-
75.发明授权公开(公告)号：US07420786B2
公开(公告)日：2008-09-02
申请号：US11068252
申请日：2005-03-01
申请人： Hideyuki Sugiyama , Yoshiaki Saito
发明人： Hideyuki Sugiyama , Yoshiaki Saito
IPC分类号： G11B5/33
CPC分类号： G11C11/161
摘要： An area of an element can be made small and fluctuation in area can be reduced. A magneto-resistance effect element is provided with a first electrode with an end face; a magneto-resistance effect film which is formed such that a surface thereof comes in contact with the end face of the first electrode; and a second electrode which is formed on another surface of the magneto-resistance effect element opposed from the surface coming in contact with the surface of the first electrode. The magneto-resistance effect film includes a magnetization pinned layer whose magnetization direction is pinned, a magnetization free layer whose magnetization direction is changeable, and a first non-magnetic layer which is provided between the magnetization pinned layer and the magnetization free layer.
摘要翻译： 可以使元件的区域变小，并且可以减小面积的波动。 磁阻效应元件设置有具有端面的第一电极; 形成为使得其表面与第一电极的端面接触的磁阻效应膜; 以及第二电极，其形成在与从第一电极的表面接触的表面相对的磁阻效应元件的另一个表面上。 磁阻效应膜包括其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的磁化自由层，以及设置在磁化钉扎层和磁化自由层之间的第一非磁性层。
-
公开(公告)号：US07411235B2
公开(公告)日：2008-08-12
申请号：US11149267
申请日：2005-06-10
申请人： Yoshiaki Saito , Hideyuki Sugiyama
发明人： Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： H01L29/94
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , H01L29/66984 , Y10S977/932 , Y10S977/933 , Y10S977/936
摘要： A spin transistor includes a first conductive layer that is made of a ferromagnetic material magnetized in a first direction, and functions as one of a source and a drain; a second conductive layer that is made of a ferromagnetic material magnetized in one of the first direction and a second direction that is antiparallel with respect to the first direction, and functions as the other one of the source and the drain. The spin transistor also includes a channel region that is located between the first conductive layer and the second conductive layer, and introduces electron spin between the first conductive layer and the second conductive layer; a gate electrode that is located above the channel region; and a tunnel barrier film that is located between the channel region and at least one of the first conductive layer and the second conductive layer.
摘要翻译： 自旋晶体管包括由沿第一方向磁化的铁磁材料制成的第一导电层，并且用作源极和漏极之一; 第二导电层，其由在相对于第一方向反平行的第一方向和第二方向中的一个中被磁化的铁磁材料制成，并且用作源极和漏极中的另一个。 自旋晶体管还包括位于第一导电层和第二导电层之间的沟道区，并且在第一导电层和第二导电层之间引入电子自旋; 位于通道区域上方的栅电极; 以及位于所述沟道区域和所述第一导电层和所述第二导电层中的至少一个之间的隧道势垒膜。
-
77.发明授权公开(公告)号：US07359163B2
公开(公告)日：2008-04-15
申请号：US10884946
申请日：2004-07-07
申请人： Minoru Amano , Yoshiaki Saito
发明人： Minoru Amano , Yoshiaki Saito
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/15 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/228
摘要： A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon. The tunnel magnetoresistance effect device suppresses the diffusion of Mn from the Mn based alloy constituting the antiferromagnetic material layer even after heat treatment is performed.
摘要翻译： 一种TMR装置，包括由含铁的反铁磁材料制成的反铁磁层，由铁磁材料制成的磁化固定层，由介电材料制成的隧道势垒层和由铁磁材料制成的无磁化层。 将绝缘体材料层插入到与反铁磁性材料层和隧道势垒层相隔一定距离的磁化固定层中。 一种材料可由NX表示，其中X是选自氧，氮和碳的第一元素; 并且N是第二元素，条件是第一和第二元素之间的结合能高于锰与第一元素之间的键合能。 第二种材料可以由MX表示，其中M是选自钛，钽，钒，铝，铕和钪的元素; X是选自氧，氮和碳的元素。 隧道磁阻效应器件即使在进行热处理之后也能抑制构成反铁磁体层的Mn基合金的Mn扩散。
-
公开(公告)号：US07248497B2
公开(公告)日：2007-07-24
申请号：US11626285
申请日：2007-01-23
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/16 , H01L27/115 , H01L29/66984 , H01L29/7881
摘要： An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction is changed by spin-injection current, a gate electrode which is formed on a channel between the first and second ferromagnetic bodies, a first driver/sinker which controls a direction of the spin-injection current to determine the magnetization direction of the second ferromagnetic body, the spin-injection current being passed through the channel, a wiring through which assist current is passed, the assist current generating a magnetic field in a magnetization easy axis direction of the second ferromagnetic body, and a second driver/sinker which controls the direction of the assist current passed through the conductive line.
摘要翻译： 自旋注入FET包括其磁化方向固定的第一铁磁体，其磁化方向由自旋注入电流改变的第二铁磁体，形成在第一和第二铁磁体之间的通道上的栅极，第一铁磁体， 驱动器/沉降器，其控制自旋喷射电流的方向以确定第二铁磁体的磁化方向，自旋喷射电流通过通道，辅助电流通过的布线，辅助电流产生磁 第二铁磁体的磁化容易轴方向的第二驱动器/沉降片，以及控制通过导线的辅助电流的方向的第二驱动器/沉降片。
-
公开(公告)号：US07247506B2
公开(公告)日：2007-07-24
申请号：US11389281
申请日：2006-03-27
申请人： Minoru Amano , Tatsuya Kishi , Yoshiaki Saito , Tomomasa Ueda , Hiroaki Yoda
发明人： Minoru Amano , Tatsuya Kishi , Yoshiaki Saito , Tomomasa Ueda , Hiroaki Yoda
IPC分类号： H01L21/00
CPC分类号： G11C11/15 , Y10T29/49021
摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.
摘要翻译： 提供了一种对于写入线具有小的开关电流并且其变化小的磁存储器件。 一种制造这种磁存储器件的方法包括：形成磁阻效应元件; 形成第一绝缘膜以覆盖磁阻效应元件; 形成涂膜以覆盖第一绝缘膜; 暴露磁阻效应元件的顶面; 在磁阻效应元件上形成上部写入线; 通过去除一部分或全部涂膜，将第一绝缘膜暴露在磁阻效应元件的侧面上; 以及形成轭结构件，以便覆盖上部书写线的至少一个侧面部分，以便与该磁阻效应元件侧面上暴露的第一绝缘膜接触。
-
公开(公告)号：US07245464B2
公开(公告)日：2007-07-17
申请号：US11069991
申请日：2005-03-03
IPC分类号： G11B5/39
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01F10/3268 , H01L43/08
摘要： A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film (1), ferromagnetic film (3) and intervening insulating film (2) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.
摘要翻译： 隧道结型的磁阻效应元件包括磁性多层膜（1），铁磁膜（3）和中间绝缘膜（2），使得电流在磁性多层膜和铁磁膜之间流动，隧穿 通过绝缘膜。 磁性多层膜包括插入第一和第二铁磁层之间的第一铁磁层，第二铁磁层和反铁磁层。
-
-
-
-
-
-
-
-
-
搜索结果
241 条记录 (耗时 0.051 秒)
