公开(公告)号：US08088683B2

公开(公告)日：2012-01-03

申请号：US12080166

申请日：2008-03-31

Applicant: Krishnaswamy Ramkumar ,  Sagy Levy

Inventor： Krishnaswamy Ramkumar ,  Sagy Levy

IPC: H01L21/4763

CPC classification number: H01L21/28282 ,  H01L21/3145

Abstract: Deposition and anneal operations are iterated to break a deposition into a number of sequential deposition-anneal operations to reach a desired annealed dielectric layer thickness. In one particular embodiment, a two step anneal is performed including an NH3 or ND3 ambient followed by an N2O or NO ambient. In one embodiment, such a method is employed to form a dielectric layer having a stoichiometry attainable with only a deposition process but with a uniform material quality uncharacteristically high of a deposition process. In particular embodiments, sequential deposition-anneal operations provide an annealed first dielectric layer upon which a second dielectric layer may be left substantially non-annealed.

Abstract translation: 重复沉积和退火操作以将沉积破坏成多个顺序的沉积退火操作以达到期望的退火介电层厚度。 在一个具体实施方案中，进行包括NH 3或ND 3环境，随后是N 2 O或NO环境的两步退火。 在一个实施例中，采用这种方法形成具有仅通过沉积工艺可获得的化学计量但具有均匀材料质量的电介质层，这在沉积过程中具有非常高的特性。 在特定实施例中，顺序沉积 - 退火操作提供退火的第一介电层，第二介电层可以在其上基本上保持不退火。

公开(公告)号：US07880219B2

公开(公告)日：2011-02-01

申请号：US11904470

申请日：2007-09-26

Applicant: Igor Polishchuk ,  Sagy Levy ,  Krishnaswamy Ramkumar

Inventor： Igor Polishchuk ,  Sagy Levy ,  Krishnaswamy Ramkumar

IPC: H01L29/792

CPC classification number: H01L29/792 ,  H01L21/28123 ,  H01L21/28167 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/045 ,  H01L29/42324

Abstract: A nonvolatile charge trap memory device and a method to form the same are described. The device includes a channel region having a channel length with crystal plane orientation. The channel region is between a pair of source and drain regions and a gate stack is disposed above the channel region.

Abstract translation: 描述了一种非易失性电荷陷阱存储器件及其形成方法。 该器件包括具有<100>晶面取向的沟道长度的沟道区。 沟道区域位于一对源极区和漏极区之间，栅极堆叠设置在沟道区的上方。

公开(公告)号：US20090020831A1

公开(公告)日：2009-01-22

申请号：US11904474

申请日：2007-09-26

Applicant: Krishnaswamy Ramkumar ,  Fredrick B. Jenne ,  William W. Koutny

Inventor： Krishnaswamy Ramkumar ,  Fredrick B. Jenne ,  William W. Koutny

IPC: H01L29/94 ,  H01L21/336

CPC classification number: H01L29/66833 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/511 ,  H01L29/792

Abstract: A nonvolatile charge trap memory device with deuterium passivation of charge traps and method of manufacture. Deuterated gate layer, deuterated gate cap layer and deuterated spacers are employed in various combinations to encapsulate the device with deuterium sources proximate to the interfaces within the gate stack and on the surface of the gate stack where traps may be present.

Abstract translation: 具有充电阱的氘钝化的非挥发性电荷陷阱存储器件及其制造方法。 氘代栅极层，氘化栅极覆盖层和氘代间隔物被采用各种组合，以将器件与邻近栅极堆叠内的界面的氘源以及可能存在阱的栅极堆叠的表面封装。

公开(公告)号：US20080290398A1

公开(公告)日：2008-11-27

申请号：US11904470

申请日：2007-09-26

Applicant: Igor Polishchuk ,  Sagy Levy ,  Krishnaswamy Ramkumar

Inventor： Igor Polishchuk ,  Sagy Levy ,  Krishnaswamy Ramkumar

IPC: H01L29/792 ,  H01L21/336

CPC classification number: H01L29/792 ,  H01L21/28123 ,  H01L21/28167 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/045 ,  H01L29/42324

Abstract: A nonvolatile charge trap memory device and a method to form the same are described. The device includes a channel region having a channel length with crystal plane orientation. The channel region is between a pair of source and drain regions and a gate stack is disposed above the channel region.

Abstract translation: 描述了一种非易失性电荷陷阱存储器件及其形成方法。 该器件包括具有<100>晶面取向的通道长度的沟道区域。 沟道区域位于一对源极区和漏极区之间，栅极堆叠设置在沟道区的上方。

公开(公告)号：US07396773B1

公开(公告)日：2008-07-08

申请号：US10313283

申请日：2002-12-06

Applicant: Alain Blosse ,  Krishnaswamy Ramkumar

Inventor： Alain Blosse ,  Krishnaswamy Ramkumar

IPC: H01L21/302

CPC classification number: H01L21/32137 ,  C11D7/261 ,  C11D7/263 ,  C11D7/3218 ,  C11D7/3227 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/28247 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136

Abstract: A method of making a semiconductor structure, comprises cleaning a gate stack with a cleaning solution. The gate stack comprises a gate layer, a metallic layer on the gate layer, and a etch-stop layer on the metallic layer. The gate layer is on a semiconductor substrate, the cleaning solution is a non-oxidizing cleaning solution, and the metallic layer comprises an easily oxidized metal.

Abstract translation: 一种制造半导体结构的方法，包括用清洁溶液清洗栅极堆叠。 栅极堆叠包括栅极层，栅极层上的金属层和金属层上的蚀刻停止层。 栅极层位于半导体基板上，清洗液为非氧化性清洗液，金属层由容易氧化的金属构成。

公开(公告)号：US07371637B2

公开(公告)日：2008-05-13

申请号：US10950332

申请日：2004-09-24

Applicant: Krishnaswamy Ramkumar ,  Sundar Narayanan

Inventor： Krishnaswamy Ramkumar ,  Sundar Narayanan

IPC: H01L21/20

CPC classification number: H01L21/022 ,  H01L21/0217 ,  H01L21/02233 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/3144 ,  H01L29/4941 ,  H01L29/78

Abstract: A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.

Abstract translation: 制造半导体结构的方法包括在衬底上形成氧化物层; 在氧化物层上形成氮化硅层; 在NO中退火层; 并在氨中退火层。 氧化物层和氮化硅层的等效氧化物厚度在一起为至多25埃。

公开(公告)号：US07365403B1

公开(公告)日：2008-04-29

申请号：US10074884

申请日：2002-02-13

Applicant: Krishnaswamy Ramkumar

Inventor： Krishnaswamy Ramkumar

IPC: H01L27/108

CPC classification number: H01L21/28282 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02233 ,  H01L21/02271 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/3143 ,  H01L29/513 ,  H01L29/518

Abstract: A semiconductor topography is provided which includes a silicon dioxide layer with a thickness equal to or less than approximately 10 angstroms and a silicon nitride layer arranged upon the silicon dioxide layer. In addition, a method is provided which includes growing an oxide film upon a semiconductor topography in the presence of an ozonated substance and depositing a silicon nitride film upon the oxide film. In some embodiments, the method may include growing the oxide film in a first chamber at a first temperature and transferring the semiconductor topography from the first chamber to a second chamber while the semiconductor topography is exposed to a substantially similar temperature as the first temperature. In either embodiment, the method may be used to form a semiconductor device including an oxide-nitride gate dielectric having an electrical equivalent oxide gate dielectric thickness of less than approximately 20 angstroms.

Abstract translation: 提供半导体形貌，其包括厚度等于或小于约10埃的二氧化硅层和布置在二氧化硅层上的氮化硅层。 此外，提供了一种方法，其包括在存在臭氧化物质的情况下在半导体形貌上生长氧化膜并在氧化物膜上沉积氮化硅膜。 在一些实施例中，该方法可以包括在第一温度下在第一室中生长氧化膜并将半导体形貌从第一室转移到第二室，同时将半导体形貌暴露于与第一温度基本相似的温度。 在任一实施例中，该方法可以用于形成包括具有小于约20埃的电等效氧化物栅极介电厚度的氧化物 - 氮化物栅极电介质的半导体器件。

公开(公告)号：US06969689B1

公开(公告)日：2005-11-29

申请号：US10184715

申请日：2002-06-28

Applicant: Krishnaswamy Ramkumar ,  Manuj Rathor ,  Biju Parameshwaran ,  Loren Lancaster

Inventor： Krishnaswamy Ramkumar ,  Manuj Rathor ,  Biju Parameshwaran ,  Loren Lancaster

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/469 ,  H01L21/8246 ,  H01L27/115

CPC classification number: H01L27/11568 ,  H01L21/28282 ,  H01L21/3144 ,  H01L27/115

Abstract: A method of forming oxide-nitride-oxide (ONO) dielectric of a SONOS-type nonvolatile storage device is disclosed. According to a first embodiment, a method may include the steps of forming a tunneling dielectric (step 102), forming a charge storing dielectric (step 104), and forming a top insulating layer (step 106) all in the same wafer processing tool. According to various aspects of the embodiments, all layers of an ONO dielectric of a SONOS-type device may be formed in the same general temperature range. Further, a tunneling dielectric may include a tunnel oxide formed with a long, low pressure oxidation, and a top insulating layer may include silicon dioxide formed with a preheated source gas.

Abstract translation: 公开了一种形成SONOS型非易失性存储装置的氧化物 - 氧化物 - 氧化物（ONO）电介质的方法。 根据第一实施例，一种方法可以包括以下步骤：形成隧道电介质（步骤102），形成电荷存储电介质（步骤104），以及在相同的晶片处理工具中形成顶部绝缘层（步骤106）。 根据实施例的各个方面，SONOS型器件的ONO电介质的所有层可以形成在相同的一般温度范围内。 此外，隧道电介质可以包括形成有长的低压氧化的隧道氧化物，并且顶部绝缘层可以包括用预热的源气体形成的二氧化硅。

公开(公告)号：US06869850B1

公开(公告)日：2005-03-22

申请号：US10326525

申请日：2002-12-20

Applicant: Alain Blosse ,  Krishnaswamy Ramkumar

Inventor： Alain Blosse ,  Krishnaswamy Ramkumar

IPC: H01L21/60 ,  H01L29/417 ,  H01L21/336

CPC classification number: H01L21/76897 ,  H01L29/41775 ,  H01L29/41783

Abstract: In one embodiment, a transistor comprises raised structures over a source region and a drain region. The raised source structures may comprise selectively deposited metal, such as selective tungsten. A self-aligned contact structure formed through a dielectric layer may provide an electrical connection between an overlying structure (e.g., an interconnect line) and the source or drain region. The transistor may further comprise a gate stack having a capping layer over a metal.

Abstract translation: 在一个实施例中，晶体管包括在源极区域和漏极区域上的凸起结构。 升高的源结构可以包括选择性沉积的金属，例如选择性钨。 通过电介质层形成的自对准接触结构可以在上覆结构（例如，互连线）和源极或漏极区之间提供电连接。 晶体管还可以包括在金属上具有覆盖层的栅极堆叠。

公开(公告)号：US06841878B1

公开(公告)日：2005-01-11

申请号：US10672895

申请日：2003-09-26

Applicant: Mira Ben-Tzur ,  Krishnaswamy Ramkumar ,  Alain Blosse ,  Fuad Badrieh

Inventor： Mira Ben-Tzur ,  Krishnaswamy Ramkumar ,  Alain Blosse ,  Fuad Badrieh

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L21/32051 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76838

Abstract: In one embodiment, a passivation level includes a low-k dielectric. The low-k dielectric helps lower the capacitance of a metal line in a last metal level, which may be just below the passivation level. In another embodiment, the metal line is relatively thick. This helps lower the metal line's resistance and resulting RC delay.

Abstract translation: 在一个实施例中，钝化层包括低k电介质。 低k电介质有助于降低金属线在最后一个金属电平的电容，这可能刚好低于钝化水平。 在另一个实施例中，金属线相对较厚。 这有助于降低金属线的电阻并导致RC延迟。