公开(公告)号：US20100032586A1

公开(公告)日：2010-02-11

申请号：US12567414

申请日：2009-09-25

Applicant: James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

Inventor： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC: G21G5/00

CPC classification number: B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homogenizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homogenized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

Abstract translation: 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个受激准分子激光脉冲调制成预定的注量，将序列中的每个调制的激光脉冲均匀化在预定的平面中， 均匀化注量控制的激光脉冲具有二维图案的狭缝，以产生线图案化的子束的注量控制脉冲序列，狭缝图案中的每个狭缝都足够窄，以防止在硅薄层的区域中诱发显着成核 通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化， 并可控地顺序地翻译一个关系 相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

公开(公告)号：US07645337B2

公开(公告)日：2010-01-12

申请号：US10994205

申请日：2004-11-18

Applicant: James S. Im ,  Paul Christian van der Wilt

Inventor： James S. Im ,  Paul Christian van der Wilt

IPC: C30B13/00 ,  H01L21/20

CPC classification number: H01L21/02609 ,  C30B13/22 ,  C30B29/605 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  Y10S117/904 ,  Y10T117/10 ,  Y10T117/1004

Abstract: In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation.

Abstract translation: 根据一个方面，本发明提供了一种用于提供具有受控微结构以及结晶织构的多晶膜的方法。 该方法提供具有特定结晶取向的细长晶粒或单晶岛。 特别地，在衬底上处理膜的方法包括产生具有主要以一个优选结晶方向取向的晶粒的织构化膜; 然后使用顺序侧向凝固结晶产生微结构，其提供以优选结晶取向取向的晶粒的位置控制生长。

公开(公告)号：US20090218577A1

公开(公告)日：2009-09-03

申请号：US12063810

申请日：2006-08-16

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L29/04 ,  H01L21/26 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08

CPC classification number: H01L27/1285 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1296

Abstract: Under one aspect, a method of processing a film includes defining a plurality of spaced-apart regions to be crystallized within a film, the film being disposed on a substrate and capable of laser-induced melting; generating a sequence of laser pulses having a fluence that is sufficient to melt the film throughout its thickness in an irradiated region, each pulse forming a line beam having a length and a width; continuously scanning the film in a first scan with a sequence of laser pulses at a velocity selected such that each pulse irradiates and melts a first portion of a corresponding spaced-apart region, wherein the first portion upon cooling forms one or more laterally grown crystals; and continuously scanning the film in a second time with a sequence of laser pulses at a velocity selected such that each pulse irradiates and melts a second portion of a corresponding spaced-apart region, wherein the first and second portions in each spaced-apart region partially overlap, and wherein the second portion upon cooling forms one or more laterally grown crystals that are extended relative to the one or more laterally grown crystals of the first portion.

Abstract translation: 在一个方面，一种处理膜的方法包括限定多个间隔开的区域以在膜内结晶，该膜设置在基板上并且能够进行激光诱导熔化; 产生具有足够的能量密度的激光脉冲序列，其在照射区域中在其厚度上熔化，每个脉冲形成具有长度和宽度的线束; 以选择的速度用一系列激光脉冲连续地扫描所述膜，使得每个脉冲照射并熔化相应的间隔开的区域的第一部分，其中所述第一部分在冷却时形成一个或多个横向生长的晶体; 并且以选择的速度用第二次激光脉冲序列连续地扫描所述膜，使得每个脉冲照射并熔化相应的间隔开的区域的第二部分，其中每个间隔开的区域中的第一和第二部分部分地 重叠，并且其中第二部分在冷却时形成相对于第一部分的一个或多个横向生长的晶体延伸的一个或多个横向生长的晶体。

公开(公告)号：US20080124526A1

公开(公告)日：2008-05-29

申请号：US12013825

申请日：2008-01-14

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/306 ,  B23K26/06 ,  B32B3/00

CPC classification number: B23K26/0673 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/067 ,  B23K26/12 ,  B23K26/127 ,  B23K26/128 ,  H01L21/02686 ,  H01L21/2026 ,  Y10S117/904 ,  Y10T428/24802

Abstract: A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and/or a first uniform small grained material (“UGS”) techniques to process the such section(s) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such section(s) of the second sample are irradiated using a second SLS technique and/or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.

Abstract translation: 提供了一种用于处理多个半导体薄膜样品中的每一个的至少一个部分的工艺和系统。 在这些处理和系统中，照射束源被控制以以预定的重复率发射连续的照射光束脉冲。 使用这种发射的光束脉冲，使用第一顺序侧向固化（“SLS”）技术和/或第一均匀小粒度材料（“UGS”）技术照射半导体膜样品之一的至少一个部分，以处理这样的 第一个样本的部分。 在完成第一采样的这一部分的处理之后，光束脉冲被重定向以冲击半导体薄膜样品的第二样品的至少一个部分。 然后，使用重定向光束脉冲，使用第二SLS技术和/或第二UGS技术照射第二样品的这样的部分，以处理第二样品的至少一个部分。 第一和第二技术可以彼此不同或基本上相同。

公开(公告)号：US07259081B2

公开(公告)日：2007-08-21

申请号：US10525288

申请日：2003-08-19

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1024 ,  Y10T117/1076

Abstract: A process and system for processing a thin film sample (e.g., a semiconductor thin film), as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. With this beam pulse, at least one portion of the film sample is irradiated with sufficient intensity to fully melt such section of the sample throughout its thickness, and the beam pulse having a predetermined shape. This portion of the film sample is allowed to resolidify, and the re-solidified at least one portion is composed of a first area and a second area. Upon the re-solidification thereof, the first area includes large grains, and the second area has a region formed through nucleation. The first area surrounds the second area and has a grain structure which is different from a grain structure of the second area. The second area is configured to facilitate thereon an active region of an electronic device.

Abstract translation: 提供了用于处理薄膜样品（例如半导体薄膜）的工艺和系统以及薄膜结构。 特别地，可以控制光束发生器发射至少一个光束脉冲。 利用该束脉冲，用足够的强度照射膜样品的至少一部分，以使样品在其整个厚度上完全熔化，并且束脉冲具有预定的形状。 允许该薄膜样品的该部分重新固化，并且再固化的至少一部分由第一区域和第二区域组成。 在其再凝固时，第一区域包括大颗粒，第二区域具有通过成核形成的区域。 第一区域围绕第二区域并且具有与第二区域的颗粒结构不同的颗粒结构。 第二区域被配置为便于其上电子设备的有源区域。

公开(公告)号：US07115503B2

公开(公告)日：2006-10-03

申请号：US10129159

申请日：2001-10-09

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/44

CPC classification number: H01L28/60 ,  H01L21/76838 ,  H01L21/76894 ,  Y10S438/94 ,  Y10S438/955

Abstract: A method and apparatus for processing a thin metal layer on a substrate to control the grain size, grain shape, and grain boundary location and orientation in the metal layer by irradiating the metal layer with a first excimer laser pulse having an intensity pattern defined by a mask to have shadow regions and beamlets. Each region of the metal layer overlapped by a beamlet is melted throughout its entire thickness, and each region of the metal layer overlapped by a shadow region remains at least partially unmelted. Each at least partially unmelted region adjoins adjacent melted regions. After irradiation by the first excimer laser pulse, the melted regions of the metal layer are pemitted to resolidify. During resolidification, the at least partially unmelted regions seed growth of grains in adjoining melted regions to produce larger grains. After completion of resolidification of the melted regions following irradiation by the first excimer laser pulse, the metal layer is irradiated by a second excimer laser pulse having a shifted intensity pattern so that the shadow regions overlap regions of the metal layer having fewer and larger grains. Each region of the metal layer overlapped by one of the shifted beamlets is melted throughout its entire thickness, while each region of the metal layer overlapped by one of the shifted shadow regions remains at least partially unmelted. During resolidification of the melted regions after irradiation by the second radiation beam pulse, the larger grains in the at least partially unmelted regions seed growth of even larger grains in adjoining melted regions. The irradiation, resolidification and re-irradiation of the metal layer may be repeated, as needed, until a desired grain structure is obtained in the metal layer.

Abstract translation: 一种用于通过用第一受激准分子激光脉冲照射金属层来处理衬底上的薄金属层以控制金属层中的晶粒尺寸，晶粒形状和晶界位置和取向的方法和装置，所述第一准分子激光脉冲具有由 面具有阴影区域和子束。 由子束重叠的金属层的每个区域在其整个厚度上熔化，并且金属层与阴影区域重叠的每个区域保持至少部分未熔化。 每个至少部分未熔化的区域邻接相邻的熔融区域。 在通过第一准分子激光脉冲照射之后，金属层的熔融区域被重新凝固。 在再凝固期间，至少部分未熔化的区域使相邻熔融区域中的晶粒生长成长以产生较大的晶粒。 在通过第一准分子激光脉冲照射完成熔融区域的再凝固后，通过具有偏移强度图案的第二准分子激光脉冲照射金属层，使得阴影区域与具有越来越小的晶粒的金属层的区域重叠。 与其中一个移位的子束重叠的金属层的每个区域在其整个厚度上熔化，而与偏移的阴影区域之一重叠的金属层的每个区域至少部分地未熔化。 在通过第二辐射束脉冲照射之后的熔融区域再凝固期间，至少部分未熔化的区域中较大的晶粒使相邻熔融区域中甚至更大的晶粒生长。 可以根据需要重复金属层的照射，再凝固和再照射，直到在金属层中获得所需的晶粒结构。

公开(公告)号：US06961117B2

公开(公告)日：2005-11-01

申请号：US10432485

申请日：2001-11-27

Applicant: James S. Im

Inventor： James S. Im

IPC: B23K26/06 ,  B23K26/067 ,  G03B27/42 ,  H01L21/20 ,  H01L21/268 ,  H01L21/768 ,  H01S3/00 ,  G03B27/54

CPC classification number: H01L21/02686 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/067 ,  G03B27/42 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/76894

Abstract: A process and system for processing a silicon thin film on a sample are provided. In particular, an irradiation beam generator is controlled to emit irradiation beam pulses at a predetermined repetition rate. These irradiation beam pulses are then separated into a first set of beam pulses and a second set of beam pulses. The first set of beam pulses are caused to irradiate through a mask to produce a plurality of beamlets. The second set of beam pulses and the beamlets are caused to impinge and irradiate at least one section of the silicon thin film. When the second set of beam pulses and the beamlets simultaneously irradiate the section of the silicon thin film, this combination of the beamlets and second set of beam pulses provides a combined intensity which is sufficient to melt the section of the silicon thin film throughout an entire thickness of the section.

Abstract translation: 提供了用于处理样品上的硅薄膜的工艺和系统。 特别地，照射光束发生器被控制为以预定重复频率发射照射束脉冲。 然后将这些照射光束脉冲分成第一组光束脉冲和第二组光束脉冲。 使第一组光束脉冲通过掩模照射以产生多个子束。 使第二组光束脉冲和子束被撞击并照射硅薄膜的至少一个部分。 当第二组光束脉冲和子束同时照射硅薄膜的部分时，子束和第二组光束脉冲的这种组合提供了足够的融合强度，以使整个整个硅薄膜的部分熔化 截面厚度。