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174 条记录 (耗时 0.032 秒)

    Magnetoresistive (MR) sensor element with sunken lead structure
    71.
    发明授权
    Magnetoresistive (MR) sensor element with sunken lead structure 失效
    具有凹陷引线结构的磁阻（MR）传感元件

    公开(公告)号：US06798622B2

    公开(公告)日：2004-09-28

    申请号：US10370346

    申请日：2003-02-19

    申请人： Kochan Ju ,  Jei-Wei Chang ,  Cheng Horng

    发明人： Kochan Ju ,  Jei-Wei Chang ,  Cheng Horng

    IPC分类号： G11B5127

    CPC分类号： G11B5/3903 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/3163 ,  G11B5/3967 ,  G11B2005/3996

    摘要： A method for forming a magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a seed layer. There is then formed contacting a pair of opposite ends of the seed layer a pair of patterned conductor lead layer structures. There is then etched, while employing an ion etch method, the seed layer and the pair of patterned conductor lead layer structures to form an ion etched seed layer and a pair of ion etched patterned conductor lead layer structures. Finally, there is then formed upon the ion etched seed layer and the pair of ion etched patterned conductor lead layers structures a magnetoresistive (MR) layered structure. Within the magnetoresistive (MR) sensor element, the pair of patterned conductor lead layer structures may be formed within a pair of recesses within an ion etch recessed dielectric isolation layer.

    摘要翻译： 一种用于形成磁阻（MR）传感器元件的方法。 首先提供基板。 然后在衬底上形成种子层。 然后形成一对图案化的导体引线层结构使种子层的一对相对端接触。 然后蚀刻，同时采用离子蚀刻方法，晶种层和一对图案化的导体引线层结构，以形成离子蚀刻种子层和一对离子蚀刻图案化导体引线层结构。 最后，然后形成在离子蚀刻种子层上，并且一对离子蚀刻图案化的导体引线层构成磁阻（MR）层状结构。 在磁阻（MR）传感器元件内，一对图案化的导体引线层结构可以形成在离子蚀刻凹陷的介电隔离层内的一对凹槽内。

    Double plate-up process for fabrication of composite magnetoresistive shared poles
    72.
    发明授权
    Double plate-up process for fabrication of composite magnetoresistive shared poles 失效
    用于制造复合磁阻共享极的双层平板工艺

    公开(公告)号：US06524491B1

    公开(公告)日：2003-02-25

    申请号：US09298935

    申请日：1999-04-26

    申请人： Chun Liu ,  Cherng-Chyi Han ,  Kochan Ju ,  Po-Kang Wang ,  Jei-Wei Chang

    发明人： Chun Liu ,  Cherng-Chyi Han ,  Kochan Ju ,  Po-Kang Wang ,  Jei-Wei Chang

    IPC分类号： G11B5127

    CPC分类号： G11B5/3967 ,  G11B5/3163 ,  Y10T29/49021 ,  Y10T29/49032

    摘要： A method of manufacturing a magnetic recording head includes the following steps. Form a low magnetic moment, first magnetic shield layer over a substrate. Form a read gap layer with a magnetoresistive head over the first shield layer. Form a seed layer over the read gap layer covered with a frame mask with a width “F”. Form a PLM second shield layer over the seed layer and planarize the shield layer. Form a non-magnetic copper or dielectric spacer layer over the PLM second shield layer. Form a first HMM, lower pole layer over the non-magnetic spacer layer. Cover the first HMM, lower pole layer with a write gap layer. Form an write head mask composed of two parallel rows of resist with an outer width “W” over the seed layer. Between the two rows of resist of the write head mask is a trench having a width “N”. Then form an HMM, upper pole layer over the write gap layer aside from the write head mask. Outside of the write head mask remove the upper pole layer and shape the lower pole layer by an IBE process.

    摘要翻译： 制造磁记录头的方法包括以下步骤。 在基板上形成低磁矩，第一磁屏蔽层。 在第一屏蔽层上形成具有磁阻头的读取间隙层。 在覆盖有宽度为“F”的框架掩模的读取间隙层上形成种子层。 在种子层上形成PLM第二屏蔽层，并平整屏蔽层。 在PLM第二屏蔽层上形成非磁性铜或电介质间隔层。 在非磁性间隔层上形成第一个HMM，下极层。 覆盖第一个HMM，具有写间隙层的下极层。 在种子层上形成具有外部宽度“W”的两个平行的抗蚀剂行的写入头罩。 写头掩模的两行抗蚀剂之间是宽度为“N”的沟槽。 然后在写入头部掩模之外的写间隙层上形成HMM，上极层。 在写头掩模之外，通过IBE工艺去除上极层并形成下极层。

    Corrosion inhibitor of NiCu for high performance writers
    73.
    发明授权
    Corrosion inhibitor of NiCu for high performance writers 失效
    NiCu防腐剂用于高性能作者

    公开(公告)号：US06387599B2

    公开(公告)日：2002-05-14

    申请号：US09756013

    申请日：2001-01-08

    申请人： Xuehua Wu ,  Yi-Chun Liu ,  Jei-Wei Chang ,  Kochan Ju

    发明人： Xuehua Wu ,  Yi-Chun Liu ,  Jei-Wei Chang ,  Kochan Ju

    IPC分类号： G03F730

    CPC分类号： G03F7/322 ,  C23F1/02 ,  G11B5/3163 ,  H05K3/064

    摘要： The problem of copper corrosion that occurs in the presence of strong alkaline developing solutions during photo rework has been overcome by protecting all exposed copper bearing surfaces from attack. Two ways of achieving this are described. In the first method, benzotriazole (BTA) is added to the developing solution which is then used in the normal way, developing time being unaffected by this modification. In the second method, the surface that is to receive the photoresist is first given a dip in a solution of BTA, following which the photoresist is immediately applied and processing, including development, proceeds as normal. For both methods the result is the elimination of all copper corrosion during development.

    摘要翻译： 通过保护所有暴露的铜轴承表面免受攻击，已经克服了在照相返修期间存在强碱性显影液存在的铜腐蚀问题。 描述实现这一点的两种方式。 在第一种方法中，将苯并三唑（BTA）加入显影液中，然后以正常方式使用，显影时间不受该改性的影响。 在第二种方法中，首先将待接收光致抗蚀剂的表面浸入BTA的溶液中，随后立即施加光致抗蚀剂，并且包括显影在内的处理正常进行。 对于这两种方法，结果是在开发过程中消除了所有的铜腐蚀。

    Non-magnetic nickel containing conductor alloys for magnetic transducer element fabrication
    74.
    发明授权
    Non-magnetic nickel containing conductor alloys for magnetic transducer element fabrication 失效
    用于磁换能器元件制造的非磁性含镍导体合金

    公开(公告)号：US06239948B1

    公开(公告)日：2001-05-29

    申请号：US09360120

    申请日：1999-07-23

    申请人： Xuehua Wu ,  Kochan Ju ,  Jei-Wei Chang

    发明人： Xuehua Wu ,  Kochan Ju ,  Jei-Wei Chang

    IPC分类号： G11B5235

    CPC分类号： G11B5/235 ,  G11B5/3109 ,  G11B5/313 ,  G11B5/3903 ,  G11B5/3967

    摘要： A non-magnetic conductor material, a magnetic transducer element having formed therein a non-magnetic conductor layer formed of the non-magnetic conductor material and a method for forming a magnetic transducer element having formed therein the non-magnetic conductor layer formed of the non-magnetic conductor material. The non-magnetic conductor material comprises an alloy comprising nickel and at least one non-magnetic conductor metal selected from the group consisting of copper at a weight percent of from about 45 to about 90, zinc at a weight percent of from about 20 to about 75, cadmium at a weight percent of from about 35 to about 85, platinum at a weight percent of from about 55 to about 90 and palladium at a weight percent of from about 75 to about 95. The non-magnetic conductor material contemplates the magnetic transducer element and the method for forming the magnetic transducer element. The non-magnetic conductor material has physical properties, chemical properties and electrochemical properties, but not magnetic properties, analogous to the physical properties, chemical properties and electrochemical properties exhibited by magnetic layers employed within magnetic transducer elements.

    摘要翻译： 一种非磁性导体材料，其中形成有由非磁性导体材料形成的非磁性导体层的磁性换能器元件以及形成其中形成有非磁性导体材料的非磁性导体层的磁性换能器元件的方法， 磁导体材料。 非磁性导体材料包括合金，其包含镍和至少一种选自重量百分比约为45至约90的铜的非磁性导体金属，重量百分比约为20至约20的锌 75，重量百分比为约35至约85的镉，以重量百分比为约55至约90的铂，以及重量百分比为约75至约95的钯。非磁性导体材料考虑了磁性 换能器元件和形成磁换能器元件的方法。 非磁性导体材料具有物理性质，化学性质和电化学性质，但不具有类似于在磁换能器元件内使用的磁性层所表现的物理性能，化学性质和电化学性能的磁性能。

    Low fringe-field and narrow write-track magneto-resistive (MR) magnetic read-write head
    75.
    发明授权
    Low fringe-field and narrow write-track magneto-resistive (MR) magnetic read-write head 失效
    低边缘场和窄写磁阻（MR）磁读写头

    公开(公告)号：US5719730A

    公开(公告)日：1998-02-17

    申请号：US682476

    申请日：1996-07-17

    申请人： Jei-Wei Chang ,  Kochan Ju ,  Yimin Guo ,  Xizeng Shi ,  Arthur Hungshin Tao

    发明人： Jei-Wei Chang ,  Kochan Ju ,  Yimin Guo ,  Xizeng Shi ,  Arthur Hungshin Tao

    IPC分类号： G11B5/012 ,  G11B5/187 ,  G11B5/265 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/1871 ,  G11B5/2651 ,  G11B5/3103 ,  G11B5/3116 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/012

    摘要： A low fringe-field and narrow write-track magnetic read-write head. The low fringe-field and narrow write-track magnetic read-write head includes a first pole layer formed adjoining an insulator layer over a substrate. The first pole layer has a first air bearing surface which has a first edge adjoining and parallel with a first surface of the insulator layer. The low fringe-field and narrow write-track magnetic read-write head also includes a second pole layer separated from the first pole layer by the insulator layer. The second pole layer has a width no greater than about 20 microns and a width no greater than about 100 percent of the width of the first pole layer where the width of the second pole layer is contained within the width of the first pole layer. The second pole layer also has a second air bearing surface coplanar with the first air bearing surface. The second air bearing surface has a second edge adjoining and parallel with a second surface of the insulator layer parallel and opposite from the first surface of the insulator layer. Finally, there is removed at least one portion of at least one of: (1) the second air bearing surface including at least one outer portion of the second edge; and (2) the first air bearing surface including at least one portion of the first edge most closely adjoining but not opposite the second edge.

    摘要翻译： 低边缘场和窄写磁道磁读写头。 低条纹场和窄写磁道磁读写头包括邻近衬底上的绝缘体层形成的第一极层。 第一极层具有第一空气轴承表面，其具有与绝缘体层的第一表面相邻并平行的第一边缘。 低条纹场和窄写磁道磁读写头还包括通过绝缘体层与第一极层分离的第二极层。 第二极层的宽度不大于约20微米，宽度不大于第一极层的宽度的第一极层的宽度的大约百分之百，其中第二极层的宽度包含在第一极层的宽度内。 第二极层还具有与第一空气轴承表面共面的第二空气轴承表面。 第二空气轴承表面具有与绝缘体层的与绝缘体层的第一表面平行且相对的绝缘体层的第二表面相邻并平行的第二边缘。 最后，移除至少一部分至少一个：（1）第二空气支承表面包括第二边缘的至少一个外部部分; 和（2）所述第一空气轴承表面包括所述第一边缘的至少一部分最接近但不相对于所述第二边缘。

    Shield structure design to improve the stability of an MR head
    77.
    发明授权
    Shield structure design to improve the stability of an MR head 有权
    盾构结构设计提高MR头的稳定性

    公开(公告)号：US07180712B1

    公开(公告)日：2007-02-20

    申请号：US09513873

    申请日：2000-02-28

    申请人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Kochan Ju

    发明人： Min Li ,  Simon H. Liao ,  Cheng T. Horng ,  Kochan Ju

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/112 ,  G11B5/3912 ,  H01L43/08

    摘要： A method for forming a laminated shield to improve the stability and performance of an MR read head and the MR read head formed using that shield. The shield consists of two layers of ferromagnetic material separated by a layer of ruthenium, allowing the ferromagnetic layers to form an antiferromagnetic configuration by means of a quantum mechanical exchange interaction. The antiferromagnetic configuration has a stable domain structure and a magnetization that forms closed loops around the shield edges thereby reducing noise in the readback signal and reducing disturbances to the magnetic state of the sensor element.

    摘要翻译： 一种用于形成层叠屏蔽以提高使用该屏蔽形成的MR读取头和MR读取头的稳定性和性能的方法。 屏蔽由两层铁磁材料组成，由一层钌分离，允许铁磁层通过量子力学交换相互作用形成反铁磁性结构。 反铁磁构造具有稳定的畴结构和磁化，其在屏蔽边缘周围形成闭环，从而降低回读信号中的噪声并减少对传感器元件的磁状态的干扰。

    Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL)
    80.
    发明授权
    Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL) 失效

    公开(公告)号：US6103136A

    公开(公告)日：2000-08-15

    申请号：US46007

    申请日：1998-03-23

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju

    IPC分类号： G01R33/09 ,  G11B5/39 ,  B44C1/22

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49048

    摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.