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公开(公告)号：US08692267B2
公开(公告)日：2014-04-08
申请号：US13188361
申请日：2011-07-21
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region, and extending to said light emitting region.
摘要翻译： 公开了一种高效率III族氮化物发光二极管。 二极管包括选自由半导体材料和导电材料组成的组的衬底，在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的透镜表面，并延伸到 所述发光区域。
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72.发明授权Semiconductor light emitting diodes including multiple bond pads on a single semiconductor die 有权半导体发光二极管包括在单个半导体管芯上的多个接合焊盘公开(公告)号：US08524515B2
公开(公告)日：2013-09-03
申请号：US12938877
申请日：2010-11-03
申请人： John Adam Edmond
发明人： John Adam Edmond
IPC分类号： H01L21/00
CPC分类号： H01L33/387 , H01L33/508
摘要： A light emitting device includes a single semiconductor die light emitting diode and at least five bond pads on the single semiconductor die. The bond pads may be in the four corners and at least one midpoint of the single semiconductor die. A wavelength conversion layer may be provided and bond pad extensions may extend through the wavelength conversion layer. Multiple wire bond connections may also be provided.
摘要翻译： 发光器件包括单个半导体管芯发光二极管和在单个半导体管芯上的至少五个接合焊盘。 接合焊盘可以在单个半导体管芯的四个拐角和至少一个中点处。 可以提供波长转换层，并且焊盘延伸部可以延伸穿过波长转换层。 也可以提供多个接线连接。
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公开(公告)号：USD675580S1
公开(公告)日：2013-02-05
申请号：US29386077
申请日：2011-02-24
申请人： John Adam Edmond , Matthew Donofrio
设计人： John Adam Edmond , Matthew Donofrio
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74.发明授权公开(公告)号：US08362681B2
公开(公告)日：2013-01-29
申请号：US13180759
申请日：2011-07-12
IPC分类号： H01J1/62
CPC分类号： F21V15/01 , F21K9/00 , F21K9/61 , F21K9/64 , F21V29/70 , F21Y2115/10 , G02B6/0003 , G02B6/001 , G02B6/0035 , G02B6/005 , G02B6/0096
摘要： A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that includes an elongated wavelength conversion tube wall having wavelength conversion material, such as phosphor, dispersed therein. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein. The elongated hollow wavelength conversion tube may have an open end, a crimped end, a reflective end, and/or other configurations. Multiples tubes and/or multiple semiconductor light emitting devices may also be used in various configurations. Related assembling methods are also described.
摘要翻译： 半导体发光装置包括细长的中空波长转换管，其包括分散在其中的波长转换材料（例如磷光体）的细长波长转换管壁。 半导体发光器件被定向以在细长的中空波长转换管内发光，以照射到分散在其中的细长波长转换管壁和波长转换材料。 细长的中空波长转换管可以具有开口端，压接端，反射端和/或其它构造。 多个管和/或多个半导体发光器件也可以以各种配置使用。 还描述了相关的组装方法。
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75.发明申请Light Emitting Diode (LED) Arrays Including Direct Die Attach And Related Assemblies 有权发光二极管（LED）阵列包括直接贴片和相关组件公开(公告)号：US20120305949A1
公开(公告)日：2012-12-06
申请号：US13463267
申请日：2012-05-03
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L33/20 , H01L33/505 , H01L33/54 , H01L2924/0002 , H01L2924/00
摘要： An electronic device may include a packaging substrate having a packaging face and first and second pluralities of light emitting diodes electrically and mechanically coupled to the packaging face of the packaging substrate. The packaging substrate may include first and second electrically conductive pads on the packaging face. The light emitting diodes of the first plurality of light emitting diodes may be electrically coupled in parallel between the first electrically conductive pad and an interconnection structure on the packaging face. The light emitting diodes of the second plurality of light emitting diodes may be electrically coupled in parallel between the interconnection structure and the second electrically conductive pad.
摘要翻译： 电子设备可以包括具有封装面的封装基板，以及电气和机械耦合到封装基板的封装面的第一和第二多个发光二极管。 包装衬底可以包括在包装面上的第一和第二导电垫。 第一多个发光二极管的发光二极管可以并联在第一导电焊盘和封装面上的互连结构之间电耦合。 第二多个发光二极管的发光二极管可以在互连结构和第二导电焊盘之间并联电耦合。
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76.发明申请Semiconductor Light Emitting Diodes Having Multiple Bond Pads and Current Spreading Structures 有权具有多个焊盘和电流传播结构的半导体发光二极管公开(公告)号：US20120217530A1
公开(公告)日：2012-08-30
申请号：US13034267
申请日：2011-02-24
申请人： John Adam Edmond , Matthew Donofrlo , Shawn Pyles
发明人： John Adam Edmond , Matthew Donofrlo , Shawn Pyles
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/08 , H01L33/405 , H01L33/505 , H01L33/58 , H01L33/62
摘要： A light emitting device includes a diode region comprising a first face and opposing edges, and a bond pad structure comprising at least three bond pads along only one of the opposing edges of the first face.
摘要翻译： 发光器件包括二极管区域，该二极管区域包括第一面和相对边缘，以及接合焊盘结构，其包括仅沿着第一面的相对边缘中的一个的至少三个接合焊盘。
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公开(公告)号：US08183588B2
公开(公告)日：2012-05-22
申请号：US12401843
申请日：2009-03-11
IPC分类号： H01L31/052
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer.
摘要翻译： 公开了一种发光二极管，其包括导电基板，导电基板上的接合金属和接合金属上的阻挡金属层。 镜面层被阻挡金属层封装，并通过阻挡层与结合金属隔离。 p型氮化镓外延层位于封装反射镜上，氮化铟镓有源层位于p型层上，n型氮化镓层位于铟镓氮层上，形成接合焊盘 到n型氮化镓层。
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公开(公告)号：US08154039B2
公开(公告)日：2012-04-10
申请号：US12401832
申请日：2009-03-11
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.
摘要翻译： 公开了一种发光二极管，其具有在二极管的顶表面的部分上的欧姆接触的垂直取向和与二极管的发光区相邻的镜层。 二极管包括通过二极管的顶部欧姆接触的几何投影下方的镜面层中的开口，其限定了二极管的反射镜层和发光区域之间的非接触区域，以促进电流流过而不是在 非接触区域又减少欧姆接触下方的发光复合数，并增加二极管透明部分中发光复合的数量。
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公开(公告)号：US08076670B2
公开(公告)日：2011-12-13
申请号：US12614700
申请日：2009-11-09
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： An LED is disclosed that includes a conductive submount, a bond pad having a total volume less than 3×10−5 mm3 conductively joined to the submount, a first ohmic contact on the bond pad opposite from the submount, an epitaxial region comprising at least a p-type layer and an n-type layer on the first ohmic contact, and an electrode to the epitaxial region opposite from the first ohmic contact.
摘要翻译： 公开了一种LED，其包括导电基座，导电接合到基座的总体积小于3×10-5mm 3的接合焊盘，与基座相对的接合焊盘上的第一欧姆接触，至少包括 第一欧姆接触上的p型层和n型层，以及与第一欧姆接触相对的外延区的电极。
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80.发明申请公开(公告)号：US20090068774A1
公开(公告)日：2009-03-12
申请号：US12268466
申请日：2008-11-11
IPC分类号： H01L21/50
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： A method is disclosed for fabricating an LED The method includes providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad formed on the ohmic contact. The bond pad has a total volume less than about 3×10−5 mm3. The LED chip is bonded to a submount via thermocompression or thermosonic bonding.
摘要翻译： 公开了一种用于制造LED的方法。该方法包括提供具有包括至少p型层和n型层的外延区域的LED芯片，形成在p型层或者p型层中的至少一个上的欧姆接触 n型层和形成在欧姆接触上的接合焊盘。 接合垫的总体积小于约3×10 -5 mm 3。 LED芯片通过热压或热超声键合键合到底座。
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