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321 条记录 (耗时 0.043 秒)

    Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
    71.
    发明授权
    Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device 有权
    晶体管，包括晶体管的半导体器件，以及晶体管和半导体器件的制造方法

    公开(公告)号：US08643009B2

    公开(公告)日：2014-02-04

    申请号：US13602393

    申请日：2012-09-04

    申请人： Junichiro Sakata ,  Hiromichi Godo ,  Takashi Shimazu

    发明人： Junichiro Sakata ,  Hiromichi Godo ,  Takashi Shimazu

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/78669 ,  H01L29/78696

    摘要： To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.

    摘要翻译： 为了抑制包括氧化物半导体层的晶体管或包括晶体管的半导体器件的电特性的劣化。 在其中使用氧化物半导体形成沟道层的晶体管中，提供与氧化物半导体层的表面接触的硅层。 此外，硅层设置成与至少形成沟道的氧化物半导体层的区域接触，并且提供与氧化物半导体层的区域接触的源电极层和漏电极层， 不提供硅层。

    Information processing apparatus and information processing method
    73.
    发明授权
    Information processing apparatus and information processing method 有权
    信息处理装置和信息处理方法

    公开(公告)号：US08584014B2

    公开(公告)日：2013-11-12

    申请号：US13523456

    申请日：2012-06-14

    申请人： Shinichi Iriya ,  Tetsuya Kohno ,  Takatoshi Nakamura ,  Junichiro Sakata

    发明人： Shinichi Iriya ,  Tetsuya Kohno ,  Takatoshi Nakamura ,  Junichiro Sakata

    IPC分类号： G06F3/00 ,  G06F3/048

    CPC分类号： G06F3/0482 ,  G06F3/04817

    摘要： An information processing apparatus having an input configured to receive a first operation and a second operation input by a user, a playback unit configured to obtain predetermined data and play back the data based on the operation input by the user from the input; and a display control unit configured to control, in correspondence with a virtual hierarchical structure for classifying the predetermined data, a display of a display screen indicating each hierarchy level, and for controlling a display of a predetermined mark in the display screen. The display control unit also controls the display of the predetermined mark corresponding to the predetermined data which is played back by the playback unit in a manner different from other non-selected marks while the predetermined mark is being selected.

    摘要翻译： 一种信息处理装置，具有被配置为接收用户的第一操作和第二操作输入的输入，被配置为基于用户从输入输入的操作获得预定数据并重放数据的重放单元; 以及显示控制单元，被配置为对应于用于对预定数据进行分类的虚拟分层结构来控制指示每个层级的显示屏幕的显示，并且用于控制显示屏幕中的预定标记的显示。 当选择预定标记时，显示控制单元还以与其他未选择标记不同的方式来控制与重放单元重放的预定数据相对应的预定标记的显示。

    Semiconductor device and method for manufacturing semiconductor device
    74.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权
    半导体装置及半导体装置的制造方法

    公开(公告)号：US08552423B2

    公开(公告)日：2013-10-08

    申请号：US12835903

    申请日：2010-07-14

    申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Tatsuya Takahashi

    发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Tatsuya Takahashi

    IPC分类号： H01L29/10

    CPC分类号： H01L27/1225 ,  G02F1/1368 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/78645

    摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

    摘要翻译： 半导体器件的开口率提高。 驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物 栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层 层。 栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

    Light-emitting device and method for manufacturing the same
    75.
    发明授权
    Light-emitting device and method for manufacturing the same 有权
    发光装置及其制造方法

    公开(公告)号：US08507903B2

    公开(公告)日：2013-08-13

    申请号：US13478547

    申请日：2012-05-23

    申请人： Hisao Ikeda ,  Junichiro Sakata

    发明人： Hisao Ikeda ,  Junichiro Sakata

    IPC分类号： H01L35/24

    CPC分类号： H01L51/5088 ,  H01L51/5048

    摘要： A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.

    摘要翻译： 公开了一种可以在低驱动电压下驱动并且比常规发光元件具有更长寿命的发光元件，并且公开了一种用于制造发光元件的方法。 所公开的发光元件包括一对电极之间的多个层; 并且所述多个层中的至少一层包含选自氧化物半导体和金属氧化物的一种化合物和具有高空穴传输性的化合物。 这样的发光元件可以抑制含有选自氧化物半导体和金属氧化物的一种化合物的层和具有高空穴传输性的化合物的层的结晶。 结果，可以延长发光元件的寿命。

    Semiconductor device and method for manufacturing the same
    78.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08492757B2

    公开(公告)日：2013-07-23

    申请号：US12717324

    申请日：2010-03-04

    申请人： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

    发明人： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

    摘要： It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

    摘要翻译： 本发明的目的是提供一种包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括半导体层为氧化物半导体层的反交错薄膜晶体管的半导体器件中，在氧化物半导体层上设置有缓冲层。 缓冲层与半导体层的沟道形成区域和源极和漏极电极层接触。 缓冲层的膜具有电阻分布。 设置在半导体层的沟道形成区域上的区域具有比半导体层的沟道形成区域更低的导电性，并且与源极和漏极电极层接触的区域具有比半导体的沟道形成区域更高的导电性 层。