公开(公告)号：US5676758A

公开(公告)日：1997-10-14

申请号：US635492

申请日：1996-04-22

申请人： Shinya Hasegawa ,  Shigeru Mizuno ,  Kazuhito Watanabe ,  Nobuyuki Takahashi ,  Manabu Tagami ,  Takanori Yoshimura ,  Hajime Sahase

发明人： Shinya Hasegawa ,  Shigeru Mizuno ,  Kazuhito Watanabe ,  Nobuyuki Takahashi ,  Manabu Tagami ,  Takanori Yoshimura ,  Hajime Sahase

IPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/455 ,  C23C16/45568 ,  C23C16/45591 ,  C23C16/4583 ,  C23C16/509 ,  H01J37/3244

摘要： A CVD mechanism includes a reactor, a substrate holder, a heating apparatus for heating the substrate holder, a reaction gas supply plate for supplying reaction gas into the reactor, and at least two cylinders disposed in a concentric form on the substrate-facing surface of the reaction gas supply plate so that reaction gas is supplied from an inward portion of each cylinder in the reaction gas supply plate. A power supply mechanism for supplying power to the reaction gas supply plate and the substrate holder, and ring magnets disposed in the upper and lower portions of the reactor are provided so that magnetic lines of force passing through a plasma space are generated by the facing magnetic pole parts of the respective magnets.

摘要翻译： CVD机构包括反应器，基板保持器，用于加热基板保持器的加热装置，用于将反应气体供应到反应器中的反应气体供给板，以及至少两个以同心形式设置在圆筒形基板的表面的基板 反应气体供给板，使得反应气体从反应气体供给板中的每个气缸的向内部分供给。 设置用于向反应气体供给板和基板保持器供电的供电机构和设置在电抗器的上部和下部的环形磁铁，使得通过等离子体空间的磁力线由面对的磁体 各个磁体的极部分。

公开(公告)号：US5624499A

公开(公告)日：1997-04-29

申请号：US634676

申请日：1996-04-18

申请人： Shigeru Mizuno ,  Masahito Ishihara ,  Manabu Tagami ,  Hajime Sahase ,  Nobuyuki Takahashi

发明人： Shigeru Mizuno ,  Masahito Ishihara ,  Manabu Tagami ,  Hajime Sahase ,  Nobuyuki Takahashi

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/458 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4583

摘要： A CVD apparatus is equipped with a reactor, a substrate holder, an evacuation section, a reactive gas supply mechanism, a heating mechanism for heating the substrate holder, a differential pressure chuck clamping section for clamping the substrate, and a purge gas supply mechanism for supplying purge gas. The substrate holder is configured to have a circular purge gas blowing channel on the top surface thereof, in which a diameter of an outside wall-surface is less than a diameter of the substrate, and a plurality of purge gas passages in an inside thereof, each of which supplies the purge gas into the purge gas blowing channel. The purge gas passing the purge gas blowing channel is blown off through a clearance between the outer periphery of the substrate and the substrate holder. The purge gas passage includes a radius-directed part directed in a radius direction of the substrate holder and has a purge gas outlet provided on the outside wall-surface of the purge gas blowing channel. The flow of the purge gas in a circumferential direction within the purge gas blowing channel is turbulent and dispersed, and therefore the purge gas blow-off pressure in the whole periphery of the substrate is uniform.

摘要翻译： CVD装置配备有反应器，基板保持器，排气部，反应气体供给机构，用于加热基板保持件的加热机构，用于夹持基板的差压卡盘夹持部，以及用于 供应吹扫气体。 衬底保持器构造成在其顶表面上具有圆形吹扫气体吹送通道，其中外壁表面的直径小于衬底的直径，并且在其内部具有多个吹扫气体通道， 其中的每一个将净化气体供应到净化气体吹送通道中。 通过吹扫气体吹送通道的净化气体通过衬底的外周和衬底保持器之间的间隙被吹出。 吹扫气体通道包括朝向衬底保持器的半径方向的半径指向部分，并且具有设置在吹扫气体吹送通道的外壁表面上的吹扫气体出口。 净化气体吹送通道内的吹扫气体在圆周方向上的流动是湍流和分散的，因此衬底整个周边的吹扫气体吹出压力是均匀的。

公开(公告)号：US5505779A

公开(公告)日：1996-04-09

申请号：US280118

申请日：1994-07-25

申请人： Shigeru Mizuno ,  Yoshihiro Katsumata ,  Nobuyuki Takahashi

发明人： Shigeru Mizuno ,  Yoshihiro Katsumata ,  Nobuyuki Takahashi

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  C23C16/00

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/45521 ,  C23C16/4585 ,  C23C16/54 ,  Y10S414/135 ,  Y10S438/908

摘要： In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles. A CVD processing system for depositing a blanket tungsten film, includes a susceptor (4); a ring chuck (9) for affixing the peripheral portion of a substrate (3) on the susceptor; reactive gas supply mechanisms (17, 18 and 19) for supplying reactive gas; and an exhaust mechanism (2) for exhausting unreacted gas and the like, wherein: the ring chuck has at least three point contact members (10) in contact with the peripheral portion of the substrate; the point contact members are provided at positions outside the inner periphery of the ring chuck; a gap (11) is formed at the point contact members between the ring chuck and the substrate; and purge gas supply mechanisms (20 and 21) are provided to blow off purge gas through the gap in order to prevent reactive gas from entering the gap (11). A ratio of the size of the gap to the flow rate of purge gas is set to such an optimum value as to satisfy a condition in which the position of the peripheral portion of the thin film coincides with the position of the inner periphery of the ring chuck.

摘要翻译： 在用于沉积覆盖钨膜的CVD处理系统中，当衬底夹具与衬底分离时，形成不同的阴影，而不会发生任何微剥离，以防止任何覆盖的钨沉积在SiO 2上，从而减少 细尘粒子。 一种用于沉积覆盖钨膜的CVD处理系统，包括基座（4）; 环形卡盘（9），用于将基板（3）的周边部分固定在基座上; 用于供应反应性气体的反应气体供应机构（17,18和19） 以及用于排出未反应气体等的排气机构（2），其中：所述环卡盘具有与所述基板的周边部分接触的至少三点接触构件（10） 点接触构件设置在环卡盘的内周的外侧的位置; 在环卡盘和基板之间的点接触构件处形成间隙（11）; 并且提供吹扫气体供给机构（20和21）以吹扫通过间隙的吹扫气体，以防止反应性气体进入间隙（11）。 将间隙尺寸与吹扫气体的流量的比率设定为最佳值，以满足薄膜的周边部分的位置与环的内周的位置一致的条件 卡盘

公开(公告)号：US5374343A

公开(公告)日：1994-12-20

申请号：US50573

申请日：1993-04-21

申请人： Toru Sasaki ,  Nobuyuki Takahashi

发明人： Toru Sasaki ,  Nobuyuki Takahashi

IPC分类号： C23C14/35 ,  H01J37/34

CPC分类号： H01J37/3452 ,  C23C14/35 ,  H01J37/3408

摘要： A magnetron sputtering apparatus is provided that is equipped with a magnetron cathode assembly in which the target can be sufficiently sputtered in the central portion to insure that it will not be a cause of particulate contamination and which permits the use of a target of larger diameter without compromising the ability to assure a satisfactorily high film deposition rate. The magnetron cathode assembly comprises basically a flat circular target, a magnetic field applying means provided near the back side of the target, and a rotary driving means for rotating the position of a magnetic field on the surface of the target, and the magnetic field application means includes at least one arrangement in which different spaced magnetic poles are provided to face each other in such a manner that they surround the central portion of the target.

摘要翻译： 提供了一种磁控溅射装置，其配备有磁控管阴极组件，其中靶可以在中心部分中被充分地溅射，以确保其不会是颗粒污染的原因，并且允许使用较大直径的靶而没有 损害了确保令人满意的高膜沉积速率的能力。 磁控管阴极组件基本上包括平坦的圆形靶，设置在靶的后侧附近的磁场施加装置和用于旋转靶的表面上的磁场位置的旋转驱动装置和磁场施加 装置包括至少一种布置，其中设置不同间隔的磁极以使它们围绕目标的中心部分的方式彼此面对。

公开(公告)号：US5308411A

公开(公告)日：1994-05-03

申请号：US835982

申请日：1992-02-20

申请人： Yozo Suga ,  Yoshiyuki Ushigami ,  Hodaka Honma ,  Nobuyuki Takahashi

发明人： Yozo Suga ,  Yoshiyuki Ushigami ,  Hodaka Honma ,  Nobuyuki Takahashi

IPC分类号： C22C38/02 ,  H01F1/04

CPC分类号： C22C38/02

摘要： An ultrahigh silicon, grain-oriented electrical steel sheet having a magnetic flux density, B.sub.8, of 1.57 or more and a degree of azimuth orientation, R (B.sub.8 /B.sub.s) of 0.87 or more is provided by cold-rolling an ultrahigh silicon steel sheet comprising by weight 0.005 to 0.023% of C, 5 to 7.1% of Si, 0.014% or less of S, 0.013 to 0.055% of acid soluble Al and 0.0095% or less of total N with the balance consisting of Fe and unavoidable impurities at a temperature in the range of from 120.degree. to 380.degree. C. optionally after annealing at a temperature in the range of from 800.degree. to 1100.degree. C., subjecting the cold-rolled sheet to decarburization annealing, coating the annealed sheet with an annealing separator, coiling the coated sheet to prepare a strip coil and subjecting the strip coil to high-temperature finish annealing for secondary recrystallization, the steel sheet being subjected to nitriding during a period from the decarburization annealing to the initiation of secondary recrystallization in the step of high-temperature finish annealing, to increase the nitrogen content.

摘要翻译： PCT No.PCT / JP91 / 00829 Sec。 371日期1992年2月20日 102（e）日期1992年2月20日PCT提交1991年6月20日PCT公布。 出版物WO91 / 19825 日期为1991年12月26日。具有磁通密度B8为1.57以上且方位取向度R（B8 / Bs）为0.87以上的超高硅晶粒取向电工钢板由冷 卷取超高硅钢板，其重量为0.005〜0.023％C，5〜7.1％Si，0.014％以下S，0.013〜0.055％酸溶性Al和0.0095％以下的总N，余量 在120〜380℃的温度范围内由Fe和不可避免的杂质构成，任选在800〜1100℃的温度退火后，对冷轧板进行脱碳退火， 用退火分离机对退火后的板进行涂布，卷取被覆板，制备带状卷材，对带状卷材进行二次再结晶的高温成品退火，在脱碳退火至起始期间，钢板进行氮化 的秒 在高温退火的步骤中进行重结晶，提高氮含量。

公开(公告)号：US5288379A

公开(公告)日：1994-02-22

申请号：US979255

申请日：1992-11-20

申请人： Minoru Namiki ,  Nobuyuki Takahashi

发明人： Minoru Namiki ,  Nobuyuki Takahashi

IPC分类号： H01L21/203 ,  B65G49/04 ,  C23C14/56 ,  H01L21/677 ,  C23C14/34 ,  B65G49/05

CPC分类号： C23C14/568 ,  B65G49/0481 ,  C23C14/566 ,  H01L21/67742 ,  Y10S414/135 ,  Y10S414/139

摘要： A vacuum processing apparatus capable of quickly replacing a substrate without opening the two gate valves simultaneously by using two waiting stages and a single transferring robot. The transferring robot is designed to transfer a substrate in a straight-line direction, and those two holding stages are set up in front of and behind the center of rotation of the baseplate of the transferring robot. An integrated module multi-chamber vacuum processing system is provided including a plurality of processing chambers capable of being vacuum evacuated, a substrate transferring chamber capable of being vacuum evacuated, at least one load-lock chamber capable of being vacuum evacuated, a substrate transferring robot assembly for transferring a substrate between the at least one load-lock chamber and the processing chamber disposed within the substrate transferring chamber. The substrate transferring robot assembly comprises a baseplate rotatable with respect to the substrate transferring chamber, two waiting stages integrated on the baseplate to store the substrate temporarily, and a substrate transferring robot mounted on the baseplate for transferring the substrate.

摘要翻译： 一种真空处理装置，其能够通过使用两个等待阶段和单个传送机器人而同时地打开两个闸阀而快速地更换基板。 传送机器人被设计成沿直线方向传送基板，并且这两个保持台设置在传送机器人的基板的旋转中心的前面和后面。 提供了一种集成模块多室真空处理系统，其包括能够被真空抽真空的多个处理室，能够被真空抽真空的基板传送室，能够真空抽真空的至少一个装载锁定室，基板传送机器人 用于在至少一个加载锁定室和设置在基板传送室内的处理室之间传送基板的组件。 基板传送机器人组件包括可相对于基板传送室旋转的基板，集成在基板上的两个等待阶段临时存储基板，以及安装在基板上用于传送基板的基板传送机器人。

公开(公告)号：USD342575S

公开(公告)日：1993-12-21

申请号：US855933

申请日：1992-03-23

申请人： Yoshihiro Ashihara ,  Mitsushi Gotanda ,  Akira Hasegawa ,  Nobuyuki Takahashi

设计人： Yoshihiro Ashihara ,  Mitsushi Gotanda ,  Akira Hasegawa ,  Nobuyuki Takahashi

公开(公告)号：US5261971A

公开(公告)日：1993-11-16

申请号：US869857

申请日：1992-04-16

申请人： Yasunari Yoshitomi ,  Takehide Senuma ,  Yozo Suga ,  Nobuyuki Takahashi

发明人： Yasunari Yoshitomi ,  Takehide Senuma ,  Yozo Suga ,  Nobuyuki Takahashi

IPC分类号： C21D8/12

CPC分类号： C21D8/1222 ,  C21D8/1233

摘要： A silicon steel slab comprising 0.05 to 0.8% by weight of Mn and up to 0.014% by weight of S+0.405Se is heated at a temperature lower than 1280.degree. C. and hot-rolled under such conditions that the hot rolling-finish temperature is 700.degree. to 1150.degree. C., the cumulative reduction ratio at the final three passes is at least 40%, and the reduction ratio at the final pass is at least 20%, or this silicon steel slab is hot-rolled at a hot rolling-finish temperature of 750.degree. to 1150.degree. C. while adopting the above-mentioned reduction ratio according to need, is maintained at a temperature not lower than 700.degree. C. for at least 1 second, and wound at a winding temperature lower than 700.degree. C. The hot-rolled sheet is subjected to the hot-rolled sheet annealing, finally cold-rolled at a reduction ratio of at least 80%, subjected to the decarburization annealing, and then subjected to the final finish annealing. According to this process, a grain-oriented electrical steel sheet having superior magnetic properties is obtained.

摘要翻译： 包含0.05〜0.8重量％的Mn和至多0.014重量％的S + 0.405Se的硅钢板在低于1280℃的温度下加热，并在热轧终轧温度 为700〜1150℃，最后三道次的累积减速比为40％以上，最后通过时的减速比为20％以上，或将该硅钢板热轧 轧制精加工温度为750〜1150℃，同时根据需要采用上述的还原率，在不低于700℃的温度下保持至少1秒钟，并以低于 700℃。对热轧板进行热轧板退火，最后以至少80％的压下率冷轧进行脱碳退火，然后进行最终成品退火。 根据该方法，得到磁特性优异的晶粒取向电工钢板。

公开(公告)号：US4767906A

公开(公告)日：1988-08-30

申请号：US920085

申请日：1986-10-17

申请人： Nobuyuki Takahashi ,  Shigeo Mori

发明人： Nobuyuki Takahashi ,  Shigeo Mori

IPC分类号： B23H1/08

CPC分类号： B23H1/08

摘要： There is described an electrical discharge machining medium which is a mixture of water and (a) a water-soluble compound of formula: ##STR1## wherein R.sub.1 is an alkyl group containing 1 to 6 carbon atoms; R.sub.2 is a hydrogen atom, a methyl group or an ethyl group; n is an integer of 4 to 100, inclusive; or (b) a compound which contains at least one oxygen-containing hydrocarbon chain of the general formula R--O--A--H).sub.m wherein A is a recurring oxyethylene group or a mixture of oxyethylene and one or both of oxypropylene and oxybutylene groups which do not interfere with the solubility of the compound; R is a hydrocarbon chain containing 3 to 8 carbon atoms; O is an oxygen atom forming an ether bond with a carbon atom constituting R; and m is an integer of 3 to 6, inclusive, which compound contains at least two groups of the formula --CH.sub.2 CH.sub.2 O--, has an average molecular weight not exceeding 5000, and is and remains liquid during machining, or a mixture of said compounds (a) and (b). This medium contributes to a decreased electrode consumption rate and an increased machining speed.

摘要翻译： 描述了一种放电加工介质，其是水和（a）下式的水溶性化合物的混合物：其中R 1是含有1至6个碳原子的烷基; R2是氢原子，甲基或乙基; n为4〜100的整数，包括0和100; 或（b）含有至少一个通式为ROAH）m的含氧烃链的化合物，其中A是重复的氧乙烯基或氧化乙烯与氧亚丙基和氧联丁基中的一个或两者的混合物，其不干扰 化合物的溶解度; R是含有3-8个碳原子的烃链; O是与构成R的碳原子形成醚键的氧原子; m为3〜6的整数，该化合物含有至少两个式-CH 2 CH 2 O-的基团，其平均分子量不超过5000，并且在加工过程中保持液体或所述化合物的混合物 a）和（b）。 该介质有助于减少电极消耗率和增加的加工速度。

公开(公告)号：US4445946A

公开(公告)日：1984-05-01

申请号：US296474

申请日：1981-08-26

申请人： Nobuyuki Takahashi ,  Masaaki Shibata ,  Yoshikuni Furuno

发明人： Nobuyuki Takahashi ,  Masaaki Shibata ,  Yoshikuni Furuno

IPC分类号： C22C38/00 ,  C21D8/02 ,  C21D9/48 ,  C22C38/14 ,  C23C2/06 ,  C21D8/04 ,  C22C38/28

CPC分类号： C22C38/14

摘要： A high strength cold rolled steel strip having an excellent deep drawability comprises 0.005% by weight or less of C, 0.5% by weight or less of Si, 0.9% by weight or less of Mn, 0.05 to 0.12% by weight of P, 0.02 to 0.2% by weight of Al, 0.16% by weight or less of Ti, optionally, 1% by weight or less of Cr, and the balance consisting of Fe, the relationship (I):Ti(%)/C(%).gtoreq.4 (I)being satisfied, and is characterized in that the relationship (II):P(%).times.Ti(%).ltoreq.0.01 (II)is also satisfied.

摘要翻译： 具有优异的深冲性的高强度冷轧钢带包含0.005重量％以下的C，0.5重量％以下的Si，0.9重量％以下的Mn，0.05〜0.12重量％的P，0.02 至0.1重量％的Al，0.16重量％以下的Ti，任选1重量％以下的Cr，余量由Fe组成，关系式（I）：Ti（％）/ C（％） （I）满足，并且其特征还在于满足关系式（II）：P（％）×Ti（％）