公开(公告)号：US08373782B2

公开(公告)日：2013-02-12

申请号：US12662673

申请日：2010-04-28

申请人： Eric Fossum ,  Kyoung Lae Cho ,  Yoon Dong Park ,  Young Gu Jin ,  Seung Hoon Lee ,  Sung-Jae Byun

发明人： Eric Fossum ,  Kyoung Lae Cho ,  Yoon Dong Park ,  Young Gu Jin ,  Seung Hoon Lee ,  Sung-Jae Byun

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/3575 ,  H04N5/378

摘要： An image sensor including a noise removing unit may sense images accurately by measuring the amount of noise generated when the image sensor does not perform a sensing operation, storing information about the measured noise amount in each pixel, and removing photocharge corresponding to the information about the measured noise amount during image sensing.

摘要翻译： 包括噪声消除单元的图像传感器可以通过测量当图像传感器不执行感测操作时产生的噪声量，存储关于每个像素中测得的噪声量的信息，并且除去与关于 测量图像感测时的噪声量。

公开(公告)号：US07911848B2

公开(公告)日：2011-03-22

申请号：US12461060

申请日：2009-07-30

申请人： Heeseok Eun ,  Jae Hong Kim ,  Kyoung Lae Cho

发明人： Heeseok Eun ,  Jae Hong Kim ,  Kyoung Lae Cho

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5642 ,  G11C16/3418 ,  G11C16/3427

摘要： A memory device and a memory data determination method are provided. The memory device may estimate a threshold voltage shift of a first memory cell based on data before the first memory cell is programmed and a target program threshold voltage of the first memory cell. The memory device may generate a metric of a threshold voltage shift of a second memory cell based on the estimated threshold voltage shift of the first memory cell. Also, the memory device may determine data stored in the second memory cell based on the metric.

摘要翻译： 提供存储器件和存储器数据确定方法。 存储器件可以基于第一存储器单元被编程之前的数据和第一存储器单元的目标程序阈值电压来估计第一存储器单元的阈值电压偏移。 存储器件可以基于第一存储器单元的估计的阈值电压偏移来产生第二存储器单元的阈值电压偏移的度量。 此外，存储器设备可以基于度量来确定存储在第二存储器单元中的数据。

公开(公告)号：US20090296486A1

公开(公告)日：2009-12-03

申请号：US12382351

申请日：2009-03-13

申请人： Jae Hong Kim ,  Kyoung Lae Cho ,  Yong June Kim ,  Dong Hyuk Chae

发明人： Jae Hong Kim ,  Kyoung Lae Cho ,  Yong June Kim ,  Dong Hyuk Chae

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C2211/5621

摘要： Memory devices and/or memory programming methods are provided. A memory device may include: a memory cell array including a plurality of memory cells; a programming unit configured to apply a plurality of pulses corresponding to a program voltage to a gate terminal of each of the plurality of memory cells, and to apply a program condition voltage to a bit line connected with a memory cell having a threshold voltage lower than a verification voltage from among the plurality of memory cells; and a control unit configured to increase the program voltage during a first time interval by a first increment for each pulse, and to increase the program voltage during a second time interval by a second increment for each pulse. Through this, it may be possible to reduce a width of a distribution of threshold voltages of a memory cell.

摘要翻译： 提供存储器件和/或存储器编程方法。 存储器件可以包括：包括多个存储器单元的存储单元阵列; 编程单元，被配置为将与编程电压相对应的多个脉冲施加到所述多个存储单元中的每一个的栅极端子，并且将编程状态电压施加到与具有低于阈值电压的阈值电压的存储单元连接的位线 来自所述多个存储单元中的验证电压; 以及控制单元，被配置为在每个脉冲的第一时间间隔期间增加编程电压的第一增量，并且在第二时间间隔期间增加每个脉冲的第二增量的编程电压。 由此，可以减小存储单元的阈值电压分布的宽度。

公开(公告)号：US08717817B2

公开(公告)日：2014-05-06

申请号：US13161940

申请日：2011-06-16

申请人： Kyoung Lae Cho ,  Heeseok Eun ,  Junjin Kong

发明人： Kyoung Lae Cho ,  Heeseok Eun ,  Junjin Kong

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3454 ,  G11C16/3459

摘要： A method of programming a non-volatile memory device including a plurality of strings arranged in rows and columns comprises activating all or a part of selection lines in one column at the same time depending upon data to be programmed, driving a bit line corresponding to the one column with a bit line program voltage, and repeating the activating and the driving until bit lines corresponding to the columns are all driven.

摘要翻译： 一种编程包括以行和列排列的多个串的非易失性存储器件的方法包括根据要编程的数据同时激活一列中的一列中的全部或一部分选择线，驱动对应于 具有位线编程电压的一列，并重复激活和驱动，直到与列相对应的位线都被驱动。

公开(公告)号：US08547752B2

公开(公告)日：2013-10-01

申请号：US13198750

申请日：2011-08-05

申请人： Hee Seok Eun ,  Jae Hong Kim ,  Kyoung Lae Cho

发明人： Hee Seok Eun ,  Jae Hong Kim ,  Kyoung Lae Cho

IPC分类号： G11C11/34

CPC分类号： G11C11/5628 ,  G11C16/26 ,  G11C16/3418

摘要： A method of reading data in a non-volatile memory device. The method includes reading a plurality of memory cells of a first page in a memory cell array using a first read level, reading a plurality of memory cells of a second page adjacent to the memory cells of the first page using a second read level, determining whether a state of each memory cell of the first page has been changed based on the first read level to verify a threshold voltage of each memory cell of the second page based on the second read level, and revising the state of each memory cell of the second page according to a result of the determination.

摘要翻译： 一种在非易失性存储器件中读取数据的方法。 该方法包括使用第一读取级别读取存储单元阵列中的第一页的多个存储单元，使用第二读取级别读取与第一页的存储单元相邻的第二页的多个存储单元，确定 基于第一读取电平来改变第一页面的每个存储器单元的状态，以基于第二读取电平来验证第二页的每个存储单元的阈值电压，并且修改第二页的每个存储器单元的状态 第二页根据确定的结果。

公开(公告)号：US08487259B2

公开(公告)日：2013-07-16

申请号：US12882531

申请日：2010-09-15

申请人： Kyoung Lae Cho ,  Hyun Min Cho

发明人： Kyoung Lae Cho ,  Hyun Min Cho

IPC分类号： G01J5/20 ,  G01T1/24

CPC分类号： H01L27/14632 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14649

摘要： An image sensor comprises a photoelectric conversion element receiving light to accumulate photocharges, and a wavelength conversion layer formed above the photoelectric conversion element to convert light within a first wavelength band into light within a second wavelength band shorter than the first wavelength band and supply the converted light to the photoelectric conversion element.

摘要翻译： 图像传感器包括接收光以积累光电荷的光电转换元件，以及形成在光电转换元件上方的波长转换层，用于将第一波长带内的光转换为比第一波长带短的第二波长带内的光，并将经转换的 光到光电转换元件。

公开(公告)号：US08233143B2

公开(公告)日：2012-07-31

申请号：US12587988

申请日：2009-10-15

申请人： Kyoung Lae Cho ,  Seung Hoon Lee ,  Dong Ki Min

发明人： Kyoung Lae Cho ,  Seung Hoon Lee ,  Dong Ki Min

IPC分类号： G01C3/00

CPC分类号： G01B11/026 ,  G01S7/4816 ,  G01S17/102 ,  G01S17/46 ,  G01S17/89

摘要： A depth sensor includes a light source, a detector, and a signal processor. The light source transmits a source signal to the target according to a transmit control signal having reference time points. The detector receives a reflected signal from the source signal being reflected from the target. The signal processor generates a plurality of sensed values by measuring respective portions of the reflected signal during respective time periods with different time delays from the reference time points. The signal processor determines a respective delay time for a maximum/minimum of the sensed values for determining the distance of the target.

摘要翻译： 深度传感器包括光源，检测器和信号处理器。 光源根据具有参考时间点的发送控制信号将目标信号发送到目标。 检测器接收来自目标反射的源信号的反射信号。 信号处理器通过在从参考时间点起不同的时间延迟的各个时间段期间测量反射信号的各个部分来产生多个感测值。 信号处理器确定用于确定目标距离的感测值的最大值/最小值的相应延迟时间。

公开(公告)号：US20120033502A1

公开(公告)日：2012-02-09

申请号：US13198750

申请日：2011-08-05

申请人： Hee Seok EUN ,  Jae Hong Kim ,  Kyoung Lae Cho

发明人： Hee Seok EUN ,  Jae Hong Kim ,  Kyoung Lae Cho

IPC分类号： G11C16/26 ,  G11C16/06

CPC分类号： G11C11/5628 ,  G11C16/26 ,  G11C16/3418

摘要： A method of reading data in a non-volatile memory device. The method includes reading a plurality of memory cells of a first page in a memory cell array using a first read level, reading a plurality of memory cells of a second page adjacent to the memory cells of the first page using a second read level, determining whether a state of each memory cell of the first page has been changed based on the first read level to verify a threshold voltage of each memory cell of the second page based on the second read level, and revising the state of each memory cell of the second page according to a result of the determination.

摘要翻译： 一种在非易失性存储器件中读取数据的方法。 该方法包括使用第一读取级别读取存储单元阵列中的第一页的多个存储单元，使用第二读取级别读取与第一页的存储单元相邻的第二页的多个存储单元，确定 基于第一读取电平来改变第一页面的每个存储器单元的状态，以基于第二读取电平来验证第二页的每个存储单元的阈值电压，并且修改第二页的每个存储器单元的状态 第二页根据确定的结果。

公开(公告)号：US20110276857A1

公开(公告)日：2011-11-10

申请号：US13103460

申请日：2011-05-09

申请人： Yong June Kim ,  Kyoung Lae Cho ,  Hong Rak Son

发明人： Yong June Kim ,  Kyoung Lae Cho ,  Hong Rak Son

IPC分类号： G06F12/00 ,  G06F11/10 ,  H03M13/05

CPC分类号： G06F11/1048 ,  G11C29/10 ,  G11C2029/0411 ,  H03M7/46

摘要： A data storage device includes a non-volatile memory device including a plurality of memory cells and a memory controller. The memory controller is configured to modify an arrangement of program data and to program the modified program data into the plurality of memory cells. The memory controller modifies the program data to eliminate a given data pattern causing physical interference between adjacent memory cells from the modified program data.

摘要翻译： 数据存储装置包括包括多个存储器单元和存储器控制器的非易失性存储器件。 存储器控制器被配置为修改程序数据的布置并且将修改的程序数据编程到多个存储器单元中。 存储器控制器修改程序数据以消除给定的数据模式，从修改的程序数据导致相邻存储器单元之间的物理干扰。

公开(公告)号：US07889563B2

公开(公告)日：2011-02-15

申请号：US12453974

申请日：2009-05-28

申请人： Kyoung Lae Cho ,  Donghun Yu

发明人： Kyoung Lae Cho ,  Donghun Yu

IPC分类号： G11C16/06

CPC分类号： G11C16/26 ,  G11C7/06 ,  G11C11/5642 ,  G11C16/349 ,  G11C2207/068 ,  G11C2211/5634 ,  G11C2211/5644

摘要： Provided are memory devices and read level controlling methods. A memory device may include: a memory cell array that includes a plurality of memory cells; a counter that counts a number of memory cells with a threshold voltage included in a reference threshold voltage interval among the plurality of memory cells; a first decision unit that compares the counted number of memory cells with a threshold value to thereby decide whether to set a read level based on the reference threshold voltage interval; and a second decision unit that generates a new reference threshold voltage interval based on the comparison result between the counted number of memory cells and the threshold value.

摘要翻译： 提供了存储器件和读取电平控制方法。 存储器装置可以包括：包括多个存储器单元的存储单元阵列; 在所述多个存储器单元之间用参考阈值电压间隔中包含的阈值电压对多个存储单元进行计数的计数器; 第一判定单元，其将计数的存储单元数与阈值进行比较，从而基于参考阈值电压间隔决定是否设置读取电平; 以及第二判定单元，其基于计数的存储单元数与阈值之间的比较结果生成新的参考阈值电压间隔。