LED actuating device and method
    71.
    发明授权
    LED actuating device and method 有权
    LED驱动装置及方法

    公开(公告)号:US09247600B2

    公开(公告)日:2016-01-26

    申请号:US14529250

    申请日:2014-10-31

    申请人: Jun Hu

    CPC分类号: H05B33/0842 Y02B20/42

    摘要: An LED actuating device comprises an LED actuating module, the LED actuating module comprises a micro-programmed control unit (MCU), a VF-value detection module, an actuator and an LED lamp unit; the MCU receives the VF value detected by the VF-value detection module; when the VF value is greater than or equal to a first boundary value, the LED lamp unit is actuated to operate in the constant current area at the first constant actuating current by the actuator; when the VF value is less than the first boundary value, the LED lamp unit is actuated to operate in the regulation area at the continuous step-down actuating current by the actuator until the VF is equal to the second boundary value, and the second boundary value is less than the first boundary value.

    摘要翻译: LED驱动装置包括LED驱动模块,LED驱动模块包括微编程控制单元(MCU),VF值检测模块,致动器和LED灯单元; MCU接收VF值检测模块检测到的VF值; 当VF值大于或等于第一边界值时,LED灯单元被致动以在致动器的第一恒定致动电流下在恒定电流区域中操作; 当VF值小于第一边界值时,LED灯单元被致动以在致动器的连续降压致动电流下在调节区域中操作,直到VF等于第二边界值,并且第二边界 值小于第一个边界值。

    Vertical parasitic PNP device in a BiCMOS process and manufacturing method of the same
    72.
    发明授权
    Vertical parasitic PNP device in a BiCMOS process and manufacturing method of the same 有权
    BiCMOS工艺中的垂直寄生PNP器件及其制造方法

    公开(公告)号:US08637959B2

    公开(公告)日:2014-01-28

    申请号:US13220485

    申请日:2011-08-29

    IPC分类号: H01L21/02

    摘要: The invention discloses a vertical parasitic PNP transistor in a BiCMOS process and manufacturing method of the same, wherein an active region is isolated by STIs. The transistor includes a collector region, a base region, an emitter region, pseudo buried layers, and N-type polysilicon. The pseudo buried layers, formed at the bottom of the STIs located on both sides of the collector region, extend laterally into the active region and contact with the collector region, whose electrodes are picked up through making deep-hole contacts in the STIs. The N-type polysilicon is formed on the base region and contacts with it, whose electrodes are picked up through making metal contacts on the N-type polysilicon. The transistors can be used as output devices in high-speed and high-gain circuits, efficiently reducing the transistors area, diminishing the collector resistance, and improving the transistors performance. The method can reduce the cost without additional technological conditions.

    摘要翻译: 本发明公开了一种BiCMOS工艺中的垂直寄生PNP晶体及其制造方法,其中有源区由STI分离。 晶体管包括集电极区域,基极区域,发射极区域,伪掩埋层和N型多晶硅。 形成在位于集电区域两侧的STI的底部的伪掩埋层横向延伸到有源区并与集电区接触,该集电极区通过在STI中形成深孔接触来拾取电极。 N型多晶硅形成在基极区上并与其接触,其电极通过在N型多晶硅上形成金属接触来拾取。 晶体管可以用作高速和高增益电路中的输出器件,有效降低晶体管面积,减小集电极电阻,并提高晶体管的性能。 该方法可以降低成本而不需要额外的技术条件。

    Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process
    73.
    发明授权
    Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process 有权
    寄生垂直PNP双极晶体管及其在BiCMOS工艺中的制造方法

    公开(公告)号:US08598678B2

    公开(公告)日:2013-12-03

    申请号:US12963242

    申请日:2010-12-08

    IPC分类号: H01L29/732 H01L21/8228

    摘要: A parasitic vertical PNP bipolar transistor in BiCMOS process comprises a collector, a base and an emitter. The collector is formed by active region with p-type ion implanting layer (P type well in NMOS). It connects a P-type conductive region, which formed in the bottom region of shallow trench isolation (STI). The collector terminal connection is through the P-type buried layer and the adjacent active region. The base is formed by N type ion implanting layer above the collector which shares a N-type lightly doped drain (NLDD) implanting of NMOS. Its connection is through the N-type poly on the base region. The emitter is formed by the P-type epitaxy layer on the base region with heavy p-type doped, and connected by the extrinsic base region of NPN bipolar transistor device. This invention also includes the fabrication method of this parasitic vertical PNP bipolar transistor in BiCMOS process. And this PNP bipolar transistor can be used as the I/O (input/output) device in high speed, high current and power gain BiCMOS circuits. It also provides a device option with low cost.

    摘要翻译: BiCMOS工艺中的寄生垂直PNP双极晶体管包括集电极,基极和发射极。 集电极由具有p型离子注入层(P型阱在NMOS中)的有源区形成。 它连接形成在浅沟槽隔离(STI)的底部区域中的P型导电区域。 集电极端子连接通过P型掩埋层和相邻的有源区。 基极由收集器上方的N型离子注入层形成,其共享NMOS的N型轻掺杂漏极(NLDD)注入。 其连接是通过基底区域上的N型聚合物。 发射极由P型掺杂的P型外延层构成,并由NPN双极晶体管器件的非本征基极区连接。 本发明还包括在BiCMOS工艺中该寄生垂直PNP双极晶体管的制造方法。 该PNP双极晶体管可用作高速,大电流和功率增益BiCMOS电路中的I / O(输入/输出)器件。 它还提供低成本的设备选项。

    Emergently Openable Safe Door
    74.
    发明申请
    Emergently Openable Safe Door 审中-公开
    突然敞开的安全门

    公开(公告)号:US20120060726A1

    公开(公告)日:2012-03-15

    申请号:US13321555

    申请日:2010-05-21

    IPC分类号: E05G1/04

    摘要: An emergently openable safe door having a mechanic lock and an electronic lock. The mechanic lock has a shell and a cylindrical plug in the shell. The plug has a primary keyway for a primary key and an emergent keyway for an emergent key. The mechanic lock and an electric lock are able to respectively be opened with a primary key and enter cod normally and be opened with the primary key and a emergent key emergently when the electronic lock thereof malfunctions or an enter code thereof is forgotten.

    摘要翻译: 具有机械锁和电子锁的紧急开启的安全门。 机械锁具有外壳和外壳中的圆柱塞。 插头具有用于主键的主键槽和紧急键的紧急键槽。 机械锁和电锁能够分别用主键打开并正常进入,并且当其电子锁故障或其输入代码被忘记时,主键和紧急钥匙突然打开。

    Dual Key Bi-Step Lock
    75.
    发明申请
    Dual Key Bi-Step Lock 有权
    双重双向锁

    公开(公告)号:US20120060571A1

    公开(公告)日:2012-03-15

    申请号:US13321549

    申请日:2010-05-20

    IPC分类号: E05B35/10

    摘要: A dual key bi-step lock having a shell and a cylindrical plug in the shell. The plug has a primary keyway and a secondary keyway and at least one set of primary pin stack and at least one set of secondary pin stack between the shell and the plug, respectively coupling with the primary and the secondary keys. a longitudinal stage is formed on a cylindrical surface of the plug. An involute side face extending from the stage to the cylindrical surface of the plug. The primary key is able to dive the plug to a position of first step open at which the stage is stopped by the key pin of the secondary pin stack. The secondary pin stack is unlocked by the secondary key and the plug is able to be further driven to a position of second step open by the primary and the secondary keys from the first step open.

    摘要翻译: 双键双向锁具有外壳和外壳中的圆柱塞。 插头具有主键槽和辅助键槽以及分别与主键和副键耦合的壳和插头之间的至少一组主引脚叠层和至少一组次级引脚叠层。 在插头的圆柱形表面上形成纵向台。 从阶段延伸到插头的圆柱形表面的渐开线侧面。 主键能够将插头潜入第一级打开的位置,在该位置,辅助引脚堆叠的键销停止该级。 辅助销堆叠由辅助钥匙解锁,并且插头能够被进一步驱动到第一阶段打开的主键和辅助键的第二阶段打开的位置。

    Method of source number estimation and its application in method of direction of arrival estimation
    76.
    发明授权
    Method of source number estimation and its application in method of direction of arrival estimation 有权
    源数估计方法及其在到达方向估计方法中的应用

    公开(公告)号:US07876264B2

    公开(公告)日:2011-01-25

    申请号:US12051569

    申请日:2008-03-19

    IPC分类号: G01S5/02 G01S3/14

    CPC分类号: G01S3/74

    摘要: The present invention provides a method of source number estimation based on eigenspace in DOA estimation, including: (1) obtaining signals received by uniform linear array; (2) calculating a covariance matrix according to the received signals; (3) calculating a complex-valued covariance matrix or a covariance matrix after real-valued computations; (4) conducting eigendecomposition to the covariance matrix to obtain its eigenvector matrix; (5) calculating a source number decision based on the eigenvector; (6) calculating a ratio; and (7) source number estimation. The present invention can accurately estimate source number and save huge amounts of computation during signal processing in DOA estimation, and lower the cost of hardware.

    摘要翻译: 本发明提供了一种基于DOA估计中的本征空间的源数估计方法,包括:(1)获得均匀线性阵列接收的信号; (2)根据接收信号计算协方差矩阵; (3)在实值计算之后计算复值协方差矩阵或协方差矩阵; (4)对协方差矩阵进行特征分解,得到其特征向量矩阵; (5)基于特征向量计算源数量决定; (6)计算比率; 和(7)源数估计。 本发明可以在DOA估计中的信号处理期间准确地估计源数量并节省大量的计算量,降低硬件成本。

    ALLOCATING TRANSMIT POWER AMONG MULTIPLE AIR INTERFACES
    77.
    发明申请
    ALLOCATING TRANSMIT POWER AMONG MULTIPLE AIR INTERFACES 有权
    在多个空气接口上分配发射功率

    公开(公告)号:US20100291884A1

    公开(公告)日:2010-11-18

    申请号:US12775380

    申请日:2010-05-06

    IPC分类号: H04B1/04

    摘要: Systems and methods for allocating transmit power among multiple interfaces in a wireless communication system are disclosed. In one embodiment, the method comprises determining a first power level that is used for transmitting over a first air interface, determining a maximum power level available for transmitting over a second interface, comparing the first power level to the maximum power level, determining a second power level that is used for transmitting over the second air interface based on the comparison of the first power level to the maximum power level, and generating a power-based payload constraint based on the second power level.

    摘要翻译: 公开了一种用于在无线通信系统中的多个接口之间分配发射功率的系统和方法。 在一个实施例中,该方法包括确定用于通过第一空中接口进行传输的第一功率电平,确定可用于通过第二接口发射的最大功率电平,将第一功率电平与最大功率电平进行比较,确定第二功率电平 基于第一功率电平与最大功率电平的比较,用于通过第二空中接口进行发送的功率电平,以及基于第二功率电平生成基于功率的有效载荷约束。

    Method for detecting the specificity of activated lymphocyte
    78.
    发明授权
    Method for detecting the specificity of activated lymphocyte 有权
    检测活化淋巴细胞特异性的方法

    公开(公告)号:US07829302B2

    公开(公告)日:2010-11-09

    申请号:US10582056

    申请日:2004-12-07

    申请人: Jun Hu

    发明人: Jun Hu

    IPC分类号: G01N33/53 G01N33/567

    CPC分类号: G01N33/56972

    摘要: A method for detecting the specificity of activated lymphocytes is provided. The present method can be used to detect the specificity of activated lymphocytes in recipients or patients after organ transplantation or being infected by pathogenic microorganism or vaccination. The establishment of the present invention can not only timely diagnose rejection in organ transplantation, but also provide guidance for rational medicament administration clinically. Furthermore, the present invention provides an accurate and quick method to detect infectious diseases. It will be significant to achieve the goals of early detection, early quarantine, early treatment, thereby reducing infection rate.

    摘要翻译: 提供了检测活化淋巴细胞特异性的方法。 本发明方法可用于检测器官移植后受体或患者的活化淋巴细胞的特异性或被病原微生物感染或接种疫苗。 本发明的建立不仅可以及时诊断器官移植排斥反应,而且可以为临床上合理的药物给药提供指导。 此外,本发明提供了一种准确快速的检测传染病的方法。 实现早期检测,早期检疫,早期治疗,从而降低感染率将是重要的。

    7-ETHYNYL-2,4,9-TRITHIAADAMANTANE AND RELATED METHODS
    79.
    发明申请
    7-ETHYNYL-2,4,9-TRITHIAADAMANTANE AND RELATED METHODS 失效
    7-乙基-2,4,9-三亚甲基二胺及相关方法

    公开(公告)号:US20100072425A1

    公开(公告)日:2010-03-25

    申请号:US12262871

    申请日:2008-10-31

    申请人: Jun Hu

    发明人: Jun Hu

    IPC分类号: H01B1/12 C07D495/14 C07F1/08

    摘要: 7-ethynyl-2,4,9-trithiaadamantane and related methods are presented. Manufacturing 7-ethynyl-2,4,9-trithiaadamantane includes the steps of: (1) reducing alkyl 2,4,9-trithiaadamantane-7-carboxylate to produce 7-hydroxymethyl-2,4,9-trithiaadamantane; (2) oxidizing 7-hydroxymethyl-2,4,9-trithiaadamantane to produces 7-carbonyl-2,4,9-trithiaadamantane; and (3) reacting 7-carbonyl-2,4,9-trithiaadamantane with Ohira-Bestmann reagent to produces 7-ethynyl-2,4,9-trithiaadamantane. Molecular wires having 2,4,9-trithiaadamantane surface anchors are also disclosed.

    摘要翻译: 提出了7-乙炔基-2,4,9-三硫杂金刚烷及相关方法。 制备7-乙炔基-2,4,9-三噻二聚金刚烷包括以下步骤:(1)还原2,4,9-三硫代金刚烷-7-羧酸烷基酯以产生7-羟甲基-2,4,9-三硫杂环丁烷; (2)氧化7-羟甲基-2,4,9-三硫杂多金刚烷以产生7-羰基-2,4,9-三硫杂金刚烷; 和(3)使7-羰基-2,4,9-三硫杂金刚烷与Ohira-Bestmann试剂反应以产生7-乙炔基-2,4,9-三硫代金刚烷。 还公开了具有2,4,9-三硫杂金刚烷表面锚的分子线。

    Method of optimizing amplification in PCR
    80.
    发明授权
    Method of optimizing amplification in PCR 失效
    优化PCR扩增方法

    公开(公告)号:US07651839B2

    公开(公告)日:2010-01-26

    申请号:US11322764

    申请日:2005-12-29

    IPC分类号: C12Q1/68 C12P19/34

    摘要: The present invention discloses a method for optimizing PCR amplification by adding elementary substance material into PCR system, wherein the elementary substance material is selected from a group consisting of element titanium, element nickel, element bismuth, element stibium, element selenium, element chromium, and a mixture of the group. This new method is more effective than conventional amplifying method and could be widely employed in many fronts, especially in multiplex PCR, two-round PCR, low-copy PCR, long-term PCR and rapid PCR.

    摘要翻译: 本发明公开了一种通过将基本物质材料添加到PCR系统中来优化PCR扩增的方法,其中基本物质材料选自元素钛,元素镍,元素铋,元素锑,元素硒,元素铬和 该组的混合物。 这种新方法比常规扩增方法更有效,可广泛应用于许多方面,特别是在多重PCR,双向PCR,低拷贝PCR,长期PCR和快速PCR中。