摘要:
An LED actuating device comprises an LED actuating module, the LED actuating module comprises a micro-programmed control unit (MCU), a VF-value detection module, an actuator and an LED lamp unit; the MCU receives the VF value detected by the VF-value detection module; when the VF value is greater than or equal to a first boundary value, the LED lamp unit is actuated to operate in the constant current area at the first constant actuating current by the actuator; when the VF value is less than the first boundary value, the LED lamp unit is actuated to operate in the regulation area at the continuous step-down actuating current by the actuator until the VF is equal to the second boundary value, and the second boundary value is less than the first boundary value.
摘要:
The invention discloses a vertical parasitic PNP transistor in a BiCMOS process and manufacturing method of the same, wherein an active region is isolated by STIs. The transistor includes a collector region, a base region, an emitter region, pseudo buried layers, and N-type polysilicon. The pseudo buried layers, formed at the bottom of the STIs located on both sides of the collector region, extend laterally into the active region and contact with the collector region, whose electrodes are picked up through making deep-hole contacts in the STIs. The N-type polysilicon is formed on the base region and contacts with it, whose electrodes are picked up through making metal contacts on the N-type polysilicon. The transistors can be used as output devices in high-speed and high-gain circuits, efficiently reducing the transistors area, diminishing the collector resistance, and improving the transistors performance. The method can reduce the cost without additional technological conditions.
摘要:
A parasitic vertical PNP bipolar transistor in BiCMOS process comprises a collector, a base and an emitter. The collector is formed by active region with p-type ion implanting layer (P type well in NMOS). It connects a P-type conductive region, which formed in the bottom region of shallow trench isolation (STI). The collector terminal connection is through the P-type buried layer and the adjacent active region. The base is formed by N type ion implanting layer above the collector which shares a N-type lightly doped drain (NLDD) implanting of NMOS. Its connection is through the N-type poly on the base region. The emitter is formed by the P-type epitaxy layer on the base region with heavy p-type doped, and connected by the extrinsic base region of NPN bipolar transistor device. This invention also includes the fabrication method of this parasitic vertical PNP bipolar transistor in BiCMOS process. And this PNP bipolar transistor can be used as the I/O (input/output) device in high speed, high current and power gain BiCMOS circuits. It also provides a device option with low cost.
摘要:
An emergently openable safe door having a mechanic lock and an electronic lock. The mechanic lock has a shell and a cylindrical plug in the shell. The plug has a primary keyway for a primary key and an emergent keyway for an emergent key. The mechanic lock and an electric lock are able to respectively be opened with a primary key and enter cod normally and be opened with the primary key and a emergent key emergently when the electronic lock thereof malfunctions or an enter code thereof is forgotten.
摘要:
A dual key bi-step lock having a shell and a cylindrical plug in the shell. The plug has a primary keyway and a secondary keyway and at least one set of primary pin stack and at least one set of secondary pin stack between the shell and the plug, respectively coupling with the primary and the secondary keys. a longitudinal stage is formed on a cylindrical surface of the plug. An involute side face extending from the stage to the cylindrical surface of the plug. The primary key is able to dive the plug to a position of first step open at which the stage is stopped by the key pin of the secondary pin stack. The secondary pin stack is unlocked by the secondary key and the plug is able to be further driven to a position of second step open by the primary and the secondary keys from the first step open.
摘要:
The present invention provides a method of source number estimation based on eigenspace in DOA estimation, including: (1) obtaining signals received by uniform linear array; (2) calculating a covariance matrix according to the received signals; (3) calculating a complex-valued covariance matrix or a covariance matrix after real-valued computations; (4) conducting eigendecomposition to the covariance matrix to obtain its eigenvector matrix; (5) calculating a source number decision based on the eigenvector; (6) calculating a ratio; and (7) source number estimation. The present invention can accurately estimate source number and save huge amounts of computation during signal processing in DOA estimation, and lower the cost of hardware.
摘要:
Systems and methods for allocating transmit power among multiple interfaces in a wireless communication system are disclosed. In one embodiment, the method comprises determining a first power level that is used for transmitting over a first air interface, determining a maximum power level available for transmitting over a second interface, comparing the first power level to the maximum power level, determining a second power level that is used for transmitting over the second air interface based on the comparison of the first power level to the maximum power level, and generating a power-based payload constraint based on the second power level.
摘要:
A method for detecting the specificity of activated lymphocytes is provided. The present method can be used to detect the specificity of activated lymphocytes in recipients or patients after organ transplantation or being infected by pathogenic microorganism or vaccination. The establishment of the present invention can not only timely diagnose rejection in organ transplantation, but also provide guidance for rational medicament administration clinically. Furthermore, the present invention provides an accurate and quick method to detect infectious diseases. It will be significant to achieve the goals of early detection, early quarantine, early treatment, thereby reducing infection rate.
摘要:
7-ethynyl-2,4,9-trithiaadamantane and related methods are presented. Manufacturing 7-ethynyl-2,4,9-trithiaadamantane includes the steps of: (1) reducing alkyl 2,4,9-trithiaadamantane-7-carboxylate to produce 7-hydroxymethyl-2,4,9-trithiaadamantane; (2) oxidizing 7-hydroxymethyl-2,4,9-trithiaadamantane to produces 7-carbonyl-2,4,9-trithiaadamantane; and (3) reacting 7-carbonyl-2,4,9-trithiaadamantane with Ohira-Bestmann reagent to produces 7-ethynyl-2,4,9-trithiaadamantane. Molecular wires having 2,4,9-trithiaadamantane surface anchors are also disclosed.
摘要:
The present invention discloses a method for optimizing PCR amplification by adding elementary substance material into PCR system, wherein the elementary substance material is selected from a group consisting of element titanium, element nickel, element bismuth, element stibium, element selenium, element chromium, and a mixture of the group. This new method is more effective than conventional amplifying method and could be widely employed in many fronts, especially in multiplex PCR, two-round PCR, low-copy PCR, long-term PCR and rapid PCR.