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126 条记录 (耗时 0.03 秒)

    Overlap design of one-turn coil
    72.
    发明授权
    Overlap design of one-turn coil 失效
    单圈线圈重叠设计

    公开(公告)号：US06506287B1

    公开(公告)日：2003-01-14

    申请号：US09039695

    申请日：1998-03-16

    申请人： Peijun Ding

    发明人： Peijun Ding

    IPC分类号： C23C1432

    CPC分类号： H01J37/321 ,  H01J37/34

    摘要： A coil for inductively coupling RF energy to a plasma in a substrate processing chamber has adjacent spaced and overlapping ends to improve uniformity of processing of the substrate.

    摘要翻译： 用于将RF能量感应耦合到衬底处理室中的等离子体的线圈具有相邻的间隔和重叠的端部，以改善衬底的加工的均匀性。

    Pressure modulation method to obtain improved step coverage of seed layer
    73.
    发明授权
    Pressure modulation method to obtain improved step coverage of seed layer 失效
    压力调制方法获得改善种子层的覆盖面

    公开(公告)号：US06458251B1

    公开(公告)日：2002-10-01

    申请号：US09440679

    申请日：1999-11-16

    申请人： Arvind Sundarrajan ,  Darryl Angelo ,  Peijun Ding ,  Barry Chin ,  Imran Hasim

    发明人： Arvind Sundarrajan ,  Darryl Angelo ,  Peijun Ding ,  Barry Chin ,  Imran Hasim

    IPC分类号： C23C1432

    CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/3492 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/3402 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76873 ,  H01L21/76877

    摘要： A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.

    摘要翻译： 提供了用于将材料沉积到衬底表面上的高纵横比特征的多步骤过程。 该方法包括在第一压力下在第一时间段内将材料沉积在衬底上，然后在第二压力下将材料沉积在衬底上持续第二段时间。 压力的调制影响在等离子体环境中离子化的颗粒的电离和轨迹。 在一个方面，本发明的方法允许在高压步骤期间在高纵横比特征的底部进行最佳沉积，并且在至少低压步骤期间在特征的侧壁上增加沉积。

    Method for improved chamber bake-out and cool-down
    75.
    发明授权
    Method for improved chamber bake-out and cool-down 失效
    改进室内烘烤和冷却的方法

    公开(公告)号：US06375743B2

    公开(公告)日：2002-04-23

    申请号：US09725595

    申请日：2000-11-29

    申请人： Arvind Sundarrajan ,  Dinesh Saigal ,  Peijun Ding

    发明人： Arvind Sundarrajan ,  Dinesh Saigal ,  Peijun Ding

    IPC分类号： C23C1600

    CPC分类号： C23C16/4408 ,  C23C14/564 ,  C23C16/4411 ,  H01L21/67103 ,  Y10S438/905

    摘要： A method and apparatus for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.

    摘要翻译： 提供一种用于烘烤和冷却真空室的方法和设备。 在第一方面，在真空室中将惰性气体从真空室的烘烤灯传导到屏蔽和从屏蔽体到真空室内的其他部分，在室烘烤期间被引入到室中。 惰性气体优选地包括氩气，氦气或氮气，并且优选地在腔室烘烤期间将室压力提高到约500乇。 还提供了一种半导体处理装置，其具有被编程为执行本发明的烘烤方法的控制器。 在第二方面，提供具有至少一个冷却气体源的处理室。 冷却气体被输入到腔室并允许与室主体和部件热连通。 冷却气体可以在腔室中停留一段时间，或者可以连续地流过腔室。 一旦室达到目标温度，则冷却气体被抽空。

    Reflow chamber and process
    76.
    发明授权
    Reflow chamber and process 失效
    回流室和工艺

    公开(公告)号：US06299689B1

    公开(公告)日：2001-10-09

    申请号：US09524239

    申请日：2000-03-13

    申请人： Hougong Wang ,  Steve Lai ,  Gongda Yao ,  Peijun Ding

    发明人： Hougong Wang ,  Steve Lai ,  Gongda Yao ,  Peijun Ding

    IPC分类号： B05C1300

    CPC分类号： H01L21/76877 ,  C23C16/4404 ,  Y10T24/44017

    摘要： A method and apparatus for reflowing a material layer is provided. The inventive method introduces into a reflow chamber a material which is at least as reactive or more reactive than a material to be reflowed (i.e., a gettering material). Preferably the gettering material is sputter deposited within the reflow chamber while a shield prevents the gettering material from reaching the material layer to be reflowed. The shield may be coupled to, or integral with a clamp for clamping a wafer (containing the material layer to be reflowed) to a wafer support provided sufficient venting exists so that contaminants degassed from the wafer may flow to the region between the sputtering target and the shield where the contaminants can react with gettering material. The shield may have a roughened top surface (the surface that faces the sputtering target) which deters gettering material from flaking off the shield and/or the shield may have a reflective bottom surface (the surface that faces the wafer) that reflects heat to the wafer.

    摘要翻译： 提供了用于回流材料层的方法和装置。 本发明的方法将至少与被回流的材料（即吸气材料）反应性或反应性至少反应的材料引入回流室。 优选地，吸气材料被溅射沉积在回流室内，而屏蔽件防止吸气材料到达要回流的材料层。 屏蔽可以耦合到或与夹具一体地夹持晶片（包含待回流的材料层）到晶片支架，提供足够的通风，使得从晶片脱气的污染物可以流到溅射靶和溅射靶之间的区域 污染物可与吸气材料反应的护罩。 屏蔽可以具有粗糙的顶表面（面向溅射靶的表面），其阻止吸气材料从屏蔽层剥离和/或屏蔽件可以具有反射底部表面（面向晶片的表面），其将热量反射到 晶圆。

    Silicon-doped titanium wetting layer for aluminum plug
    77.
    发明授权
    Silicon-doped titanium wetting layer for aluminum plug 失效
    用于铝插头的掺硅钛润湿层

    公开(公告)号：US06232665B1

    公开(公告)日：2001-05-15

    申请号：US09328117

    申请日：1999-06-08

    申请人： Gongda Yao ,  Peijun Ding ,  Zheng Xu ,  Hoa Kieu

    发明人： Gongda Yao ,  Peijun Ding ,  Zheng Xu ,  Hoa Kieu

    IPC分类号： H01L2348

    CPC分类号： H01L21/76843 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A process for fabricating metal plugs, such as aluminum plugs, in a semiconductor workpiece. The invention is suitable for filling narrow, high aspect ratio holes, and the invention minimizes the formation of TiAl3 or other products of interdiffusion between the plug and the wetting layer. First, an optional barrier layer is created by covering the bottom of a hole with a film containing titanium nitride doped with silicon. Second, a wetting layer is created by covering the side walls of a hole with a film containing titanium doped with silicon, in a Ti:Si molar ratio greater than 1:2. Preferably, the wetting layer is created by sputter deposition using a titanium sputtering target containing 0.1% to 20% wt silicon, most preferably 5% to 10% wt silicon. Third, the hole is filled by depositing a material consisting primarily of aluminum. The hole preferably is filled by sputter deposition using an aluminum sputtering target, optionally containing dopants such as copper. To facilitate filling the hole without voids, the aluminum sputter deposition preferably is performed “warm”, i.e., with the workpiece at a temperature below the melting point of aluminum but high enough to promote reflow of the deposited material. The silicon atoms in the wetting layer inhibit the titanium from reacting with the aluminum, and the wetting layer facilitates filling the hole with the aluminum material without leaving unfilled voids.

    摘要翻译： 一种用于在半导体工件中制造诸如铝塞的金属插头的工艺。 本发明适用于填充狭窄的高纵横比孔，并且本发明使塞子和润湿层之间的TiAl 3或其他相互扩散产物的形成最小化。 首先，通过用含有掺杂硅的氮化钛的膜覆盖孔的底部来产生可选的阻挡层。 第二，通过用含有掺杂硅的钛的膜覆盖孔的侧壁，Ti：Si摩尔比大于1:2产生润湿层。 优选地，通过使用含有0.1重量％至20重量％硅，最优选5重量％至10重量％硅的钛溅射靶的溅射沉积来产生润湿层。 第三，通过沉积主要由铝构成的材料填充孔。 优选地，通过使用铝溅射靶的溅射沉积来填充孔，任选地含有诸如铜的掺杂剂。 为了方便填充孔而没有空隙，铝溅射沉积优选地进行“暖”，即工件在低于铝的熔点的温度下，但足够高以促进沉积材料的回流。 润湿层中的硅原子阻止钛与铝反应，并且润湿层有助于用铝材料填充孔而不留下未填充的空隙。