公开(公告)号：US5766379A

公开(公告)日：1998-06-16

申请号：US478491

申请日：1995-06-07

申请人： William A. Lanford ,  Wei Wang ,  Peijun Ding

发明人： William A. Lanford ,  Wei Wang ,  Peijun Ding

IPC分类号： C23C14/02 ,  C23C14/16 ,  C23C14/58 ,  H01L21/768 ,  H01L23/532 ,  C22F38/06 ,  C22F38/16

CPC分类号： C23C14/5806 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5853 ,  H01L21/76834 ,  H01L21/76886 ,  H01L23/53233 ,  H01L23/53238 ,  H01L21/76807 ,  H01L2924/0002

摘要： A copper conductor is formed which is included as a component in microelectronic devices. The conductor is formed by forming a metal layer on the surface of a microelectronic substrate, forming a copper layer on the metal layer, and annealing the metal and copper layers. The annealing step diffuses at least some of the metal layer through the copper layer to the surface thereof where the diffused metal forms a protective metal oxide at the surface of the copper layer. As a result, the metal oxide layer passivates the copper layer.

摘要翻译： 形成铜导体作为微电子器件中的组件。 通过在微电子基板的表面上形成金属层，在金属层上形成铜层，退火金属层和铜层，形成导体。 退火步骤通过铜层将至少一些金属层扩散到其表面，其中扩散金属在铜层的表面形成保护性金属氧化物。 结果，金属氧化物层钝化铜层。

公开(公告)号：US06057223A

公开(公告)日：2000-05-02

申请号：US21666

申请日：1998-02-10

申请人： William A. Lanford ,  Wei Wang ,  Peijun Ding

发明人： William A. Lanford ,  Wei Wang ,  Peijun Ding

IPC分类号： C23C14/02 ,  C23C14/16 ,  C23C14/58 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763

CPC分类号： C23C14/5806 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5853 ,  H01L21/76834 ,  H01L21/76886 ,  H01L23/53233 ,  H01L23/53238 ,  H01L21/76807 ,  H01L2924/0002

摘要： A copper conductor is formed which is included as a component in microelectronic devices. The conductor is formed by forming a metal layer on the surface of a microelectronic substrate, forming a copper layer on the metal layer, and annealing the metal and copper layers. The annealing step diffuses at least some of the metal layer through the copper layer to the surface thereof where the diffused metal forms a protective metal oxide at the surface of the copper layer. As a result, the metal oxide layer passivates the copper layer.

摘要翻译： 形成铜导体作为微电子器件中的组件。 通过在微电子基板的表面上形成金属层，在金属层上形成铜层，退火金属层和铜层，形成导体。 退火步骤通过铜层将至少一些金属层扩散到其表面，其中扩散金属在铜层的表面形成保护性金属氧化物。 结果，金属氧化物层钝化铜层。

公开(公告)号：US5622608A

公开(公告)日：1997-04-22

申请号：US219131

申请日：1994-05-05

申请人： William A. Lanford ,  Peijun Ding

发明人： William A. Lanford ,  Peijun Ding

IPC分类号： C23C14/18 ,  C23C14/58 ,  H01L21/768 ,  H01L23/532 ,  H05K1/03 ,  H05K1/09 ,  H05K3/14 ,  C23C14/34

CPC分类号： H01L23/53233 ,  C23C14/185 ,  C23C14/58 ,  H01L21/76838 ,  H01L23/53238 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K1/09 ,  H05K3/146

摘要： A process for preparing an oxidation resistant, electrically conductive copper layer on a substrate, and copper layers so formed, are disclosed. A copper layer is deposited onto the surface of a substrate, and subsequently annealed. The copper layer includes magnesium in an amount sufficient to form an inert magnesium oxide layer at the surface of the copper layer upon annealing.

摘要翻译： 公开了一种在衬底上制备抗氧化导电铜层的方法以及如此形成的铜层。 将铜层沉积在衬底的表面上，随后退火。 铜层包括在退火时在铜层的表面上足以形成惰性氧化镁层的量的镁。

公开(公告)号：US5959358A

公开(公告)日：1999-09-28

申请号：US837770

申请日：1997-04-22

申请人： William A. Lanford ,  Peijun Ding

发明人： William A. Lanford ,  Peijun Ding

IPC分类号： C23C14/18 ,  C23C14/58 ,  H01L21/768 ,  H01L23/532 ,  H05K1/03 ,  H05K1/09 ,  H05K3/14 ,  H01L23/54 ,  C23C14/34 ,  H01L23/48

CPC分类号： H01L23/53233 ,  C23C14/185 ,  C23C14/58 ,  H01L21/76838 ,  H01L23/53238 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K1/09 ,  H05K3/146

摘要： A process for preparing an oxidation resistant, electrically conductive copper layer on a substrate, and copper layers so formed, are disclosed. A copper layer is deposited onto the surface of a substrate, and subsequently annealed. The copper layer includes magnesium in an amount sufficient to form an inert magnesium oxide layer at the surface of the copper layer upon annealing.

摘要翻译： 公开了一种在衬底上制备抗氧化导电铜层的方法和如此形成的铜层。 将铜层沉积在衬底的表面上，随后退火。 铜层包括在退火时在铜层的表面上足以形成惰性氧化镁层的量的镁。

公开(公告)号：US09390970B2

公开(公告)日：2016-07-12

申请号：US11733671

申请日：2007-04-10

申请人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

发明人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

IPC分类号： H01L21/768 ,  C23C14/04 ,  C23C14/16 ,  H01L21/285

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

摘要： We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer, A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

摘要翻译： 我们公开了使用离子沉积溅射在半导体特征表面上施加雕刻层的材料的方法，其中施加有雕刻层的表面被保护以通过冲击沉积层的离子来抵抗侵蚀和污染。第一保护层 的材料通过传统的溅射或离子沉积溅射沉积在衬底表面上，结合足够低的衬底偏压，其中施加了该层的表面在保护层沉积期间不被腐蚀掉或被污染。 随后，使用离子沉积溅射在增加的衬底偏压下施加雕刻的第二材料层，以从材料的第一保护层的一部分和第二沉积材料层的一部分雕刻出形状。 该方法特别适用于在半导体特征表面上雕刻阻挡层，润湿层和导电层。

公开(公告)号：US08652259B2

公开(公告)日：2014-02-18

申请号：US12355463

申请日：2009-01-16

申请人： Steve Poppe ,  Yan Rozenzon ,  David Z. Chen ,  Xiaole Yan ,  Peijun Ding ,  Zheng Xu

发明人： Steve Poppe ,  Yan Rozenzon ,  David Z. Chen ,  Xiaole Yan ,  Peijun Ding ,  Zheng Xu

IPC分类号： C23C16/00

CPC分类号： C23C16/4587 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/54 ,  C30B25/105 ,  C30B25/12 ,  C30B25/165

摘要： One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.

摘要翻译： 一个实施例提供了用于材料沉积的装置。 该装置包括反应室和一对基座。 每个感受体具有前侧和后侧，并且前侧安装基板。 感应器垂直定位，使得基座的前侧彼此面对，并且基座的垂直边缘彼此接触，从而在基板之间形成基本封闭的窄通道。 该装置还包括多个用于注入反应气体的气体喷嘴。 气体喷嘴被控制成使得室内的气体流动方向可以交替，从而有利于均匀的材料沉积。 该装置包括位于反应室外部的多个加热单元。 加热单元以这样的方式布置，使得它们将热能直接辐射到基座的背面。

公开(公告)号：US20130256129A1

公开(公告)日：2013-10-03

申请号：US13876133

申请日：2010-12-22

申请人： Peng Chen ,  Mengxin Zhao ,  Gang Wei ,  Liang Zhang ,  Bai Yang ,  Guilong Wu ,  Peijun Ding

发明人： Peng Chen ,  Mengxin Zhao ,  Gang Wei ,  Liang Zhang ,  Bai Yang ,  Guilong Wu ,  Peijun Ding

IPC分类号： C23C14/35

摘要： A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.

摘要翻译： 等离子体处理装置包括在室（20）上方的室（20）和目标（25）。 靶（25）的表面与腔室（20）的处理区域接触。 所述腔室（20）包括叠置的绝缘子室（21）和第一导电子室（22）。 第一导电子室（22）设置在绝缘子室（21）的下方。 绝缘子室（21）由绝缘材料制成，第一导电子室（22）由金属材料制成。 在绝缘子室（21）中设置由金属材料制成的法拉第屏蔽部件（10）或电镀有导电涂层并且包括至少一个狭缝的绝缘材料。 电感线圈（13）围绕绝缘子室（21）的外部。 通过使用等离子体处理装置可以解决由于在溅射过程中在线圈表面上形成的颗粒导致的晶片污染的问题。

公开(公告)号：US08500963B2

公开(公告)日：2013-08-06

申请号：US11778648

申请日：2007-07-17

申请人： Mengqi Ye ,  Keith A. Miller ,  Peijun Ding ,  Goichi Yoshidome ,  Rong Tao

发明人： Mengqi Ye ,  Keith A. Miller ,  Peijun Ding ,  Goichi Yoshidome ,  Rong Tao

IPC分类号： C23C14/35

CPC分类号： C23C14/0623 ,  C23C14/351 ,  C23C14/541

摘要： A plasma sputtering method for metal chalcogenides, such as germanium antimony telluride (GST), useful in forming phase-change memories. The substrate is held at a selected temperature at which the material deposits in either an amorphous or crystalline form. GST has a low-temperature amorphous range and a high-temperature crystalline range separated by a transition band of 105-120° C. Bipolar pulsed sputtering with less than 50% positive pulses of less than 10:s pulse width cleans the target while maintain the sputtering plasma. The temperature of chamber shields is maintained at a temperature favoring crystalline deposition or they may be coated with arc-spray aluminum or with crystallographically aligned copper or aluminum.

摘要翻译： 用于形成相变存储器的金属硫族化物的等离子体溅射方法，例如锗锑碲化物（GST）。 将基材保持在选定的温度，在该温度下，材料以无定形或结晶形式沉积。 GST具有低温无定形范围和105-120°C的过渡带隔离的高温结晶范围。具有小于10s脉冲宽度的小于50％正脉冲的双极脉冲溅射清洁目标，同时保持 溅射等离子体。 室屏蔽的温度保持在有利于结晶沉积的温度下，或者它们可以用电弧喷涂铝或用结晶取向的铜或铝涂覆。

公开(公告)号：US07884032B2

公开(公告)日：2011-02-08

申请号：US11260899

申请日：2005-10-28

申请人： Mengqi Ye ,  Peijun Ding ,  Hougong Wang ,  Zhendong Liu

发明人： Mengqi Ye ,  Peijun Ding ,  Hougong Wang ,  Zhendong Liu

IPC分类号： H01L21/469

CPC分类号： H01L21/02046 ,  C23C14/345 ,  C23C14/35 ,  H01L21/28017 ,  H01L21/2855

摘要： A system, method and apparatus is capable of producing layers of various materials stacked on one another on a substrate without exposing the substrate to the pressure and contaminants of ambient air until the stack is complete. In one aspect, the stack of layers can include both an insulative layer of one or more insulative films, and a conductive metal layer of one or more conductive metal layer films. In another aspect, a bias signal of positive and negative voltage pulses may be applied to a target of a deposition chamber to facilitate deposition of the target material in a suitable fashion. In yet another aspect, one or more of the deposition chambers may have associated therewith a pump which combines a turbomolecular pump and a cryogenic pump to generate an ultra high vacuum in that chamber. Other features are described and claimed.

摘要翻译： 一种系统，方法和装置能够在衬底上彼此层叠各种材料层，而不会使衬底暴露于周围空气的压力和污染物直到堆叠完成。 在一个方面，层叠层可以包括一个或多个绝缘膜的绝缘层和一个或多个导电金属层膜的导电金属层。 在另一方面，可以将正电压脉冲和负电压脉冲的偏置信号施加到沉积室的靶，以便以合适的方式沉积目标材料。 在另一方面，一个或多个沉积室可以具有与其结合的泵，其将涡轮分子泵和低温泵组合以在该室中产生超高真空。 描述和要求保护其他特征。

公开(公告)号：US20100300506A1

公开(公告)日：2010-12-02

申请号：US12476991

申请日：2009-06-02

申请人： Jiunn Benjamin Heng ,  Chentao Yu ,  Zheng Xu ,  Jianming Fu ,  Peijun Ding

发明人： Jiunn Benjamin Heng ,  Chentao Yu ,  Zheng Xu ,  Jianming Fu ,  Peijun Ding

IPC分类号： H01L31/042 ,  H01L31/00 ,  H01L31/18

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/03529 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/0508 ,  H01L31/0725 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

摘要： One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside glass cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

摘要翻译： 本发明的一个实施例提供了一种双面异质结太阳能电池模块。 太阳能电池包括前侧玻璃罩，位于前侧玻璃罩下方的背面玻璃罩以及位于前侧玻璃罩和后侧玻璃罩之间的多个太阳能电池。 每个太阳能电池包括位于前侧玻璃盖下方的半导体多层结构，包括：前侧电极栅格，位于前侧电极下方的第一层重掺杂非晶Si（a-Si），轻掺杂晶体Si c-Si），以及位于轻掺杂的c-Si层下方的重掺杂c-Si层。 太阳能电池还包括位于多层结构下方的第二层重掺杂a-Si层; 以及位于重掺杂a-Si的第二层下方的背面电极。