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公开(公告)号:US11960722B2
公开(公告)日:2024-04-16
申请号:US17872217
申请日:2022-07-25
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Tomoharu Tanaka , Huai-Yuan Tseng , Dung V. Nguyen , Kishore Kumar Muchherla , Eric N. Lee , Akira Goda , James Fitzpatrick , Dave Ebsen
IPC: G06F3/06
CPC classification number: G06F3/0608 , G06F3/064 , G06F3/0679
Abstract: A memory device includes an array of memory cells and a controller configured to access the array of memory cells. The controller is further configured to program a first number of bits to a first memory cell of the array of memory cells and program a second number of bits to a second memory cell of the array of memory cells. The controller is further configured to following a period after programming the second number of bits to the second memory cell, merge at least a subset of the first number of bits stored in the first memory cell to the second number of bits stored in the second memory cell without erasing the second memory cell such that the second number of bits plus at least the subset of the first number of bits are stored in the second memory cell.
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公开(公告)号:US20240062799A1
公开(公告)日:2024-02-22
申请号:US17890040
申请日:2022-08-17
Applicant: Micron Technology, Inc.
Inventor: Huai-Yuan Tseng , Akira Goda , Kishore Kumar Muchherla , James Fitzpatrick , Tomoharu Tanaka , Eric N. Lee , Dung V. Nguyen , David Ebsen
IPC: G11C11/406 , G11C11/4076 , G11C11/408
CPC classification number: G11C11/40615 , G11C11/40618 , G11C11/4076 , G11C11/4085
Abstract: Methods, apparatuses and systems related to maintaining stored data are described. The apparatus may be configured to refresh the stored data according to schedule that includes different delays between successive refresh operations.
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公开(公告)号:US20240028200A1
公开(公告)日:2024-01-25
申请号:US17872217
申请日:2022-07-25
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Tomoharu Tanaka , Huai-Yuan Tseng , Dung V. Nguyen , Kishore Kumar Muchherla , Eric N. Lee , Akira Goda , James Fitzpatrick , Dave Ebsen
IPC: G06F3/06
CPC classification number: G06F3/0608 , G06F3/064 , G06F3/0679
Abstract: A memory device includes an array of memory cells and a controller configured to access the array of memory cells. The controller is further configured to program a first number of bits to a first memory cell of the array of memory cells and program a second number of bits to a second memory cell of the array of memory cells. The controller is further configured to following a period after programming the second number of bits to the second memory cell, merge at least a subset of the first number of bits stored in the first memory cell to the second number of bits stored in the second memory cell without erasing the second memory cell such that the second number of bits plus at least the subset of the first number of bits are stored in the second memory cell.
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公开(公告)号:US11810621B2
公开(公告)日:2023-11-07
申请号:US17458795
申请日:2021-08-27
Applicant: Micron Technology, Inc.
Inventor: Eric N. Lee , Robert W. Strong , William Akin , Jeremy Binfet
CPC classification number: G11C16/16 , G11C16/102 , G11C16/26 , G11C16/30
Abstract: A method includes receiving signaling indicative of performance of a sanitization operation to a processing device coupled to a memory device and applying a sanitization voltage to a plurality of memory blocks of the memory device. The sanitization voltage can be greater than an erase voltage of the plurality of memory blocks.
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公开(公告)号:US20230335201A1
公开(公告)日:2023-10-19
申请号:US18135915
申请日:2023-04-18
Applicant: Micron Technology, Inc.
Inventor: Tomoharu Tanaka , James Fitzpatrick , Huai-Yuan Tseng , Kishore Kumar Muchherla , Eric N. Lee , David Scott Ebsen , Dung Viet Nguyen , Akira Goda
CPC classification number: G11C16/26 , G11C16/102 , G11C16/08
Abstract: A method includes causing a read operation to be initiated with respect to a set of target cells. For each target cell, a respective group of adjacent cells is adjacent to the target cell. The method further includes obtaining, for each group of adjacent cells, respective cell state information, assigning, based on the cell state information, each target cell of the set of target cells to a respective state information bin, and determining a set of calibrated read level offsets. Each state information bin is associated with a respective group of target cells of the set of target cells, and each calibrated read level offset of the set of calibrated read level offsets is associated with a respective state information bin of the set of state information bins.
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公开(公告)号:US20230176741A1
公开(公告)日:2023-06-08
申请号:US17979534
申请日:2022-11-02
Applicant: Micron Technology, Inc.
Inventor: Jeffrey S. McNeil , Eric N. Lee , Vamsi Pavan Rayaprolu , Sivagnanam Parthasarathy , Kishore Kumar Muchherla , Patrick R. Khayat , Violante Moschiano
IPC: G06F3/06
CPC classification number: G06F3/0613 , G06F3/0679 , G06F3/0653
Abstract: Described are systems and methods for validating read level voltage in memory devices. An example memory device comprises: a memory array comprising a plurality of memory cells electrically coupled to a plurality of wordlines; and a controller coupled to the memory array, the controller to perform operations comprising: causing a read level voltage to be applied to a specified wordline of the plurality of wordlines; receiving an actual bit count reflecting a number of memory cells that have their respective threshold voltages below the read level voltage; and responsive to determining that a difference of an expected bit count and the actual bit count exceeds a predetermined threshold value, adjusting the read level voltage.
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公开(公告)号:US20230170033A1
公开(公告)日:2023-06-01
申请号:US17987780
申请日:2022-11-15
Applicant: Micron Technology, Inc.
Inventor: Eric N. Lee , Luyen Vu , Lawrence Celso Miranda , Jeffrey Ming-Hung Tsai
CPC classification number: G11C16/3459 , G11C16/26 , G11C16/102
Abstract: Control logic in a memory device initiates a first loop of a program operation, the first loop comprising (a) a program phase where a plurality of memory cells associated with a selected wordline in a block of the memory array are programmed to respective ones of a plurality of programming levels and (b) a corresponding program verify phase. The control logic further identifies memory cells of the plurality of memory cells associated with a first sub-set of the plurality of programming levels to be verified during the program verify phase, the first sub-set comprising two or more dynamically selected programming levels comprising at least a lowest programming level and a second lowest programing level of the respective ones of the plurality of programming levels. The control logic further causes a first program verify voltage to be applied to the selected wordline during the program verify phase, and performs concurrent sensing operations on the identified memory cells of the plurality of memory cells associated with the first sub-set of the plurality programming levels to determine whether the identified memory cells were programmed to respective program verify threshold voltages corresponding to the first sub-set of the plurality of programming levels during the program phase of the first loop of the program operation.
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公开(公告)号:US11568933B1
公开(公告)日:2023-01-31
申请号:US17458840
申请日:2021-08-27
Applicant: Micron Technology, Inc.
Inventor: Eric N. Lee , Robert W. Strong , William Akin , Jeremy Binfet
Abstract: A method includes identifying a target plane in respective planes of a memory die in a non-volatile memory array and identifying, from blocks of non-volatile memory cells coupled to a common bit line in the target plane, at least one target block in the target plane. The method further includes performing an operation to disable at least one gate associated with the at least one target block to prevent access to the blocks of non-volatile memory cells coupled to the common bit line in the target plane.
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公开(公告)号:US20230024167A1
公开(公告)日:2023-01-26
申请号:US17590650
申请日:2022-02-01
Applicant: Micron Technology, Inc.
Inventor: Eric N. Lee , Dheeraj Srinivasan
IPC: G06F3/06
Abstract: A memory system includes multiple dice having multiple planes. A processing device is coupled to the dice and performs controller operations including receiving a status indicator signal comprising a pulse that is asserted by one or more planes of the multiple dice. In response to receiving the pulse, the processing device performs at least one of: a first status check of dice operations being performed by the multiple dice at an expiration of a polling delay period; or a second status check of the dice operations in response to detecting the pulse being deasserted. The processing device terminates performances of status checks while the status indicator signal remains deasserted.
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公开(公告)号:US20220391321A1
公开(公告)日:2022-12-08
申请号:US17547818
申请日:2021-12-10
Applicant: Micron Technology, Inc.
Inventor: Sundararajan Sankaranarayanan , Eric N. Lee
IPC: G06F12/084 , G06F3/06 , G06F12/0882 , G11C16/24 , G11C16/26
Abstract: A memory device includes a first memory array, a second memory array, and a page cache circuit coupled to the first memory array and the second memory array. The page cache circuit includes at least one set of concurrent resources and at least one shared resource, wherein the at least one set of concurrent resources are asynchronously and concurrently accessible by the first memory array and the second memory array, and wherein the at least one shared resource is accessible in a time-multiplexed fashion by the first memory array and the second memory array.
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